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1. 发明申请

WO2013162574A1 CUSTOMIZABLE NONLINEAR ELECTRICAL DEVICES 审中-公开
标题翻译：可定制非线性电气设备
公开(公告)号：WO2013162574A1
公开(公告)日：2013-10-31
申请号：PCT/US2012/035187
申请日：2012-04-26
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , ZHANG, Minxian Max , YANG, Jianhua , RIBEIRO, Gilberto Medeiros , WILLIAMS, R. Stanley
发明人： ZHANG, Minxian Max , YANG, Jianhua , RIBEIRO, Gilberto Medeiros , WILLIAMS, R. Stanley
IPC分类号： H01L29/86
CPC分类号： H01L29/24 , B82Y10/00 , G11C13/0007 , G11C13/003 , G11C2213/15 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L21/02425 , H01L21/02565 , H01L21/02631 , H01L27/1021 , H01L27/2418 , H01L27/2463 , H01L29/0676 , H01L29/247 , H01L29/47 , H01L29/8605 , H01L29/861 , H01L29/8616 , H01L29/872 , H01L29/92 , H01L45/00 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.
摘要翻译：在一个示例中，可定制的非线性电气装置包括第一导电层，第二导电层和夹在第一导电层和第二导电层之间的薄膜金属氧化物层，以在金属氧化物之间形成第一整流界面层和第一导电层以及金属氧化物层和第二导电层之间的第二整流界面。金属氧化物层包括共存的金属和金属氧化物的导电混合物。还提供了形成非线性电气装置的方法。

2. 发明申请

WO2013162553A1 NONLINEAR MEMRISTORS 审中-公开
标题翻译：非线性仪器
公开(公告)号：WO2013162553A1
公开(公告)日：2013-10-31
申请号：PCT/US2012/035024
申请日：2012-04-25
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , ZHANG, Minxian Max , PICKETT, Matthew D. , WILLIAMS, R. Stanley
发明人： YANG, Jianhua , ZHANG, Minxian Max , PICKETT, Matthew D. , WILLIAMS, R. Stanley
IPC分类号： H01L27/105 , H01L21/8239
CPC分类号： H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147 , H01L45/1608
摘要： A nonlinear memristor includes a bottom electrode, a top electrode, and an insulator layer between the bottom electrode and the top electrode. The insulator layer comprises a metal oxide. The nonlinear memristor further includes a switching channel within the insulator layer, extending from the bottom electrode toward the top electrode, and a nano-cap layer of a metal-insulator-transition material between the switching channel and the top electrode. The top electrode comprises the same metal as the metal in the metal-insulator-transition material.
摘要翻译：非线性忆阻器包括在底部电极和顶部电极之间的底部电极，顶部电极和绝缘体层。绝缘体层包括金属氧化物。所述非线性忆阻器还包括在所述绝缘体层内从所述底部电极朝向所述顶部电极延伸的开关通道，以及在所述开关沟道和所述顶部电极之间的金属 - 绝缘体 - 过渡材料的纳米帽层。顶部电极包括与金属 - 绝缘体 - 过渡材料中的金属相同的金属。

3. 发明申请

WO2013019228A1 NITRIDE-BASED MEMRISTORS 审中-公开
标题翻译：基于氮化物的电容器
公开(公告)号：WO2013019228A1
公开(公告)日：2013-02-07
申请号：PCT/US2011/046467
申请日：2011-08-03
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , RIBEIRO, Gilberto Medeiros , WILLIAMS, R. Stanley
发明人： YANG, Jianhua , RIBEIRO, Gilberto Medeiros , WILLIAMS, R. Stanley
IPC分类号： H01L21/8247 , H01L27/115
CPC分类号： H01L45/1608 , H01L27/101 , H01L45/08 , H01L45/1266 , H01L45/145
摘要： A nitride-based memristor memristor includes: a first electrode comprising a first nitride material; a second electrode comprising a second nitride material; and active region positioned between the first electrode and the second electrode. The active region includes an electrically semiconducting or nominally insulating and weak ionic switching nitride phase. A method for fabricating the nitride-based memristor is also provided.
摘要翻译：一种基于氮化物的忆阻忆阻器，包括：第一电极，包括第一氮化物材料; 包括第二氮化物材料的第二电极; 以及位于第一电极和第二电极之间的有源区。有源区包括电半导体或标称绝缘和弱离子切换氮化物相。还提供了一种用于制造氮化物基忆阻器的方法。

4. 发明申请

WO2013012423A1 MEMRISTOR STRUCTURE WITH A DOPANT SOURCE 审中-公开
标题翻译：具有铒源的电容结构
公开(公告)号：WO2013012423A1
公开(公告)日：2013-01-24
申请号：PCT/US2011/044734
申请日：2011-07-20
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , ZHANG, Minxian Max , YANG, Jianhua , WILLIAMS, R. Stanley
发明人： ZHANG, Minxian Max , YANG, Jianhua , WILLIAMS, R. Stanley
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L45/1658 , G11C13/0007 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1266 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147
摘要： A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.
摘要翻译：公开了一种包括掺杂剂源的忆阻器。该结构包括电极，包括导电材料的导电合金，掺杂剂源材料和掺杂剂，以及位于电极和导电合金之间的开关层，其中开关层包括电子半导体或标称绝缘和弱离子开关材料。还公开了一种用于制造包括掺杂剂源的忆阻器的方法。

5. 发明申请

WO2012057772A1 MEMRISTIVE DEVICES AND MEMRISTORS WITH RIBBON-LIKE JUNCTIONS AND METHODS FOR FABRICATING THE SAME 审中-公开
标题翻译：具有类似结点的测量装置和制动器及其制造方法
公开(公告)号：WO2012057772A1
公开(公告)日：2012-05-03
申请号：PCT/US2010/054610
申请日：2010-10-29
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , CHO, Hans S. , YANG, Jianhua
发明人： CHO, Hans S. , YANG, Jianhua
IPC分类号： H01L27/115 , H01L21/8247 , H01L29/40
CPC分类号： H01L45/1253 , H01L27/101 , H01L27/2463 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/124 , H01L45/1266 , H01L45/1273 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1683
摘要： Memristive devices, memristors and methods for fabricating memristive devices are disclosed. In one aspect, a memristor includes a first electrode wire (202) and a second electrode wire (204). The second electrode wire and the first electrode wire define an overlap area. The memristor includes an electrode extension (208) in contact with the first electrode wire and disposed between the first and second electrode wires. At least one junction (206) is disposed between the second electrode wire and the electrode extension. Each junction contacts a portion of the electrode extension and has a junction contact area with the second electrode wire, and the sum total junction contact area of the at least one junction is less than the overlap area.
摘要翻译：公开了用于制造忆阻装置的记忆装置，忆阻器和方法。一方面，忆阻器包括第一电极线（202）和第二电极线（204）。第二电极线和第一电极线限定重叠区域。忆阻器包括与第一电极线接触并设置在第一和第二电极线之间的电极延伸部（208）。至少一个结（206）设置在第二电极线和电极延伸部之间。每个接点接触电极延伸部分的一部分并且具有与第二电极线的结接触区域，并且至少一个结的总和接触面积小于重叠面积。

6. 发明申请

WO2011133138A1 NANOSCALE SWITCHING DEVICES WITH PARTIALLY OXIDIZED ELECTRODES 审中-公开
标题翻译：具有部分氧化电极的纳米开关器件
公开(公告)号：WO2011133138A1
公开(公告)日：2011-10-27
申请号：PCT/US2010/031639
申请日：2010-04-19
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , GILBERTO, Ribeiro , WILLIAMS, R. Stanley
发明人： YANG, Jianhua , GILBERTO, Ribeiro , WILLIAMS, R. Stanley
IPC分类号： H01L21/332
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/1253 , H01L45/146 , Y10S438/90
摘要： A nanoscale switching device (200) is provided. The device comprises: a first electrode (110) of a nanoscale width; a second electrode (120) of a nanos-cale width; an active region (122) disposed between the first and second elec-trodes, the active region having a non-conducting portion (122a) comprising an electronically semiconducting or nominally insulating and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field and a source portion (122b) that acts as a source or sink for the dopants; and an oxide layer (115, 125) either formed on the first electrode, between the first electrode and the active region or formed on the second electrode, between the second electrode and the active region. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.
摘要翻译：提供了一种纳米级切换装置（200）。该装置包括：纳米级宽度的第一电极（110）具有纳秒级宽度的第二电极（120）; 设置在第一和第二电极之间的有源区（122），有源区具有非导电部分（122a），该导电部分包括电子半导体或标称绝缘以及能够承载一种掺杂剂的弱离子导体开关材料，在电场下传输掺杂剂和用作掺杂剂的源或阱的源极部分（122b）; 或者形成在第一电极之间，第一电极和有源区之间，或形成在第二电极上，在第二电极和有源区之间的氧化物层（115,125）。还提供了包括多个纳米级切换装置的交叉开关阵列。还提供了制造至少一个纳米级切换装置的方法。

7. 发明申请

WO2011016794A3 MEMRISTORS WITH ASYMMETRIC ELECTRODES 审中-公开
标题翻译：具有不对称电极的MEMRISTORS
公开(公告)号：WO2011016794A3
公开(公告)日：2011-10-20
申请号：PCT/US2009051936
申请日：2009-07-28
申请人： HEWLETT PACKARD DEVELOPMENT CO , BRATKOVSKI ALEXANDRE M , STUKE MICHAEL , YANG JIANHUA , WANG SHIH-YUAN
发明人： BRATKOVSKI ALEXANDRE M , STUKE MICHAEL , YANG JIANHUA , WANG SHIH-YUAN
IPC分类号： H01L27/02 , B82B1/00 , B82B3/00
CPC分类号： H01L45/1273 , G11C13/0007 , G11C16/02 , G11C2213/19 , G11C2213/52 , H01L27/2463 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/147 , H01L45/148
摘要： Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device (100) comprises an active region (102), a first electrode (104) disposed on a first surface of the active region, and a second electrode (106) disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a larger width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region (108) within the active region between the first electrode and the second electrode.
摘要翻译：本发明的实施例针对提供非易失性忆阻切换的纳米级忆阻器装置。在一个实施例中，忆阻器装置（100）包括有源区（102），设置在有源区的第一表面上的第一电极（104）和设置在有源区的第二表面上的第二电极（106），与第一表面相对的第二表面。第一电极在第一方向上被配置为具有比有源区更大的宽度，并且第二电极被配置为在第二方向上具有比有源区更大的宽度。向至少一个电极施加电压在第一电极和第二电极之间的有源区域内的子区域（108）上产生电场。

8. 发明申请

WO2011008195A3 MEMRISTIVE DEVICE 审中-公开
标题翻译：有趣的设备
公开(公告)号：WO2011008195A3
公开(公告)日：2011-09-22
申请号：PCT/US2009050433
申请日：2009-07-13
申请人： HEWLETT PACKARD DEVELOPMENT CO , YANG JIANHUA , XIA QIANGFEI , BRATKOVSKI ALEXANDRE M
发明人： YANG JIANHUA , XIA QIANGFEI , BRATKOVSKI ALEXANDRE M
IPC分类号： H01L27/02
CPC分类号： H01L45/145 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/142 , H01L45/146 , H01L45/1616
摘要： A memristive device (10, 10', 10") includes a first electrode (12), a second electrode (14) crossing the first electrode (12) at a non-zero angle, and an active region (16) disposed between the first and second electrodes (12, 14). The active region (16) has a controlled defect profile throughout its thickness (T).
摘要翻译：一种忆阻器件（10,10'，10“）包括第一电极（12），以非零角度与第一电极（12）交叉的第二电极（14），以及设置在第一电极第一和第二电极（12,14），有源区（16）在其整个厚度（T）上具有受控的缺陷轮廓。

9. 发明申请

WO2011099961A1 MEMORY RESISTOR ADJUSTMENT USING FEEDBACK CONTROL 审中-公开
标题翻译：使用反馈控制的存储器电阻调整
公开(公告)号：WO2011099961A1
公开(公告)日：2011-08-18
申请号：PCT/US2010/023550
申请日：2010-02-09
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , STRACHAN, John , BORGHETTI, Julien , PICKETT, Matthew , RIBEIRO, Gilberto , YANG, Jianhua
发明人： STRACHAN, John , BORGHETTI, Julien , PICKETT, Matthew , RIBEIRO, Gilberto , YANG, Jianhua
IPC分类号： G11C8/00 , G11C13/00 , G11C16/00
CPC分类号： G11C11/5678 , G11C11/54 , G11C13/0007 , G11C13/0069 , G11C2013/0092
摘要： Apparatus and methods related to memory resistors are provided. A feedback controller applies adjustment signals to a memristor. A non-volatile electrical resistance of the memristor is sensed by the feedback controller during the adjustment. The memristor is adjusted to particular values lying between first and second limiting values with minimal overshoot. Increased memristor service life, faster operation, lower power consumption, and higher operational integrity are achieved by the present teachings.
摘要翻译：提供了与存储电阻相关的装置和方法。反馈控制器将调整信号应用于忆阻器。在调节期间，反馈控制器感测到避震器的非易失性电阻。忆阻器被调整到具有最小过冲的第一和第二极限值之间的特定值。通过本发明实现了增加的忆阻器使用寿命，更快的操作，更低的功耗和更高的操作完整性。

10. 发明申请

WO2011096940A1 MEMORY RESISTOR HAVING MULTI-LAYER ELECTRODES 审中-公开
标题翻译：具有多层电极的记忆电阻
公开(公告)号：WO2011096940A1
公开(公告)日：2011-08-11
申请号：PCT/US2010/023492
申请日：2010-02-08
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , WU, Wei , RIBEIRO, Gilberto
发明人： YANG, Jianhua , WU, Wei , RIBEIRO, Gilberto
IPC分类号： H01L27/115 , H01L21/8247 , H01L27/10
CPC分类号： H01L45/08 , G11C13/0002 , H01L45/1253 , H01L45/146
摘要： Methods and means related to memory resistors are provided. A memristor includes two multi-layer electrodes and an active material layer. One multi-layer electrode forms an Ohmic contact region with the active material layer. The other multi-layer electrode forms a Schottky barrier layer with the active material layer. The active material layer is subject to oxygen vacancy profile reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events.
摘要翻译：提供了与存储电阻相关的方法和方法。忆阻器包括两个多层电极和活性材料层。一个多层电极与活性材料层形成欧姆接触区域。其他多层电极与活性物质层形成肖特基势垒层。在施加的电场的影响下，活性物质层经受氧空位轮廓重构。因此，忆阻器的电阻可以通过施加的编程电压进行调节，并且在编程事件之间是非易失性的。

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