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1. 发明申请

WO2013162574A1 CUSTOMIZABLE NONLINEAR ELECTRICAL DEVICES 审中-公开
标题翻译：可定制非线性电气设备
公开(公告)号：WO2013162574A1
公开(公告)日：2013-10-31
申请号：PCT/US2012/035187
申请日：2012-04-26
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , ZHANG, Minxian Max , YANG, Jianhua , RIBEIRO, Gilberto Medeiros , WILLIAMS, R. Stanley
发明人： ZHANG, Minxian Max , YANG, Jianhua , RIBEIRO, Gilberto Medeiros , WILLIAMS, R. Stanley
IPC分类号： H01L29/86
CPC分类号： H01L29/24 , B82Y10/00 , G11C13/0007 , G11C13/003 , G11C2213/15 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L21/02425 , H01L21/02565 , H01L21/02631 , H01L27/1021 , H01L27/2418 , H01L27/2463 , H01L29/0676 , H01L29/247 , H01L29/47 , H01L29/8605 , H01L29/861 , H01L29/8616 , H01L29/872 , H01L29/92 , H01L45/00 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.
摘要翻译：在一个示例中，可定制的非线性电气装置包括第一导电层，第二导电层和夹在第一导电层和第二导电层之间的薄膜金属氧化物层，以在金属氧化物之间形成第一整流界面层和第一导电层以及金属氧化物层和第二导电层之间的第二整流界面。金属氧化物层包括共存的金属和金属氧化物的导电混合物。还提供了形成非线性电气装置的方法。

2. 发明申请

WO2013019228A1 NITRIDE-BASED MEMRISTORS 审中-公开
标题翻译：基于氮化物的电容器
公开(公告)号：WO2013019228A1
公开(公告)日：2013-02-07
申请号：PCT/US2011/046467
申请日：2011-08-03
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , RIBEIRO, Gilberto Medeiros , WILLIAMS, R. Stanley
发明人： YANG, Jianhua , RIBEIRO, Gilberto Medeiros , WILLIAMS, R. Stanley
IPC分类号： H01L21/8247 , H01L27/115
CPC分类号： H01L45/1608 , H01L27/101 , H01L45/08 , H01L45/1266 , H01L45/145
摘要： A nitride-based memristor memristor includes: a first electrode comprising a first nitride material; a second electrode comprising a second nitride material; and active region positioned between the first electrode and the second electrode. The active region includes an electrically semiconducting or nominally insulating and weak ionic switching nitride phase. A method for fabricating the nitride-based memristor is also provided.
摘要翻译：一种基于氮化物的忆阻忆阻器，包括：第一电极，包括第一氮化物材料; 包括第二氮化物材料的第二电极; 以及位于第一电极和第二电极之间的有源区。有源区包括电半导体或标称绝缘和弱离子切换氮化物相。还提供了一种用于制造氮化物基忆阻器的方法。

3. 发明申请

WO2013130064A1 MEMRISTOR WITH CHANNEL REGION IN THERMAL EQUILIBRIUM WITH CONTAINING REGION 审中-公开
标题翻译：具有通道区域的带有包含区域的热平衡的仪器
公开(公告)号：WO2013130064A1
公开(公告)日：2013-09-06
申请号：PCT/US2012/027101
申请日：2012-02-29
申请人： Hewlett-Packard Development Company, L.P. , MIAO, Feng , YANG, Jianhua , STRACHAN, John Paul , YI, Wei , RIBEIRO, Gilberto Medeiros , WILLIAMS, R. Stanley
发明人： MIAO, Feng , YANG, Jianhua , STRACHAN, John Paul , YI, Wei , RIBEIRO, Gilberto Medeiros , WILLIAMS, R. Stanley
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1641 , H01L45/165
摘要： A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.
摘要翻译：具有与含有区域的热平衡的通道区域的忆阻器。通道区域具有可变浓度的移动离子。由化学计量结晶材料形成的含有区域含有和与通道区域处于热平衡状态。

4. 发明申请

WO2012177265A1 HIGH-RELIABILITY HIGH-SPEED MEMRISTOR 审中-公开
标题翻译：高可靠性高速电容器
公开(公告)号：WO2012177265A1
公开(公告)日：2012-12-27
申请号：PCT/US2011/041881
申请日：2011-06-24
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , MIAO, Feng , YANG, Jianhua , STRACHAN, John Paul , YI, Wei , RIBEIRO, Gilberto Medeiros , WILLIAMS, R. Stanley
发明人： MIAO, Feng , YANG, Jianhua , STRACHAN, John Paul , YI, Wei , RIBEIRO, Gilberto Medeiros , WILLIAMS, R. Stanley
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149
摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
摘要翻译：忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。开关层包含导电通道和储存区。导电通道具有可变浓度的移动离子的费米玻璃材料。储存区相对于传导通道横向设置，并且用作导电通道的移动离子的源/汇。在切换操作中，在电场和热效应的协同驱动力下，移动离子被移入或移出横向设置的储存区，以改变导电通道中的可移动离子的浓度，以改变导电通道费米玻璃材料。

5. 发明申请

WO2013162553A1 NONLINEAR MEMRISTORS 审中-公开
标题翻译：非线性仪器
公开(公告)号：WO2013162553A1
公开(公告)日：2013-10-31
申请号：PCT/US2012/035024
申请日：2012-04-25
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , ZHANG, Minxian Max , PICKETT, Matthew D. , WILLIAMS, R. Stanley
发明人： YANG, Jianhua , ZHANG, Minxian Max , PICKETT, Matthew D. , WILLIAMS, R. Stanley
IPC分类号： H01L27/105 , H01L21/8239
CPC分类号： H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147 , H01L45/1608
摘要： A nonlinear memristor includes a bottom electrode, a top electrode, and an insulator layer between the bottom electrode and the top electrode. The insulator layer comprises a metal oxide. The nonlinear memristor further includes a switching channel within the insulator layer, extending from the bottom electrode toward the top electrode, and a nano-cap layer of a metal-insulator-transition material between the switching channel and the top electrode. The top electrode comprises the same metal as the metal in the metal-insulator-transition material.
摘要翻译：非线性忆阻器包括在底部电极和顶部电极之间的底部电极，顶部电极和绝缘体层。绝缘体层包括金属氧化物。所述非线性忆阻器还包括在所述绝缘体层内从所述底部电极朝向所述顶部电极延伸的开关通道，以及在所述开关沟道和所述顶部电极之间的金属 - 绝缘体 - 过渡材料的纳米帽层。顶部电极包括与金属 - 绝缘体 - 过渡材料中的金属相同的金属。

6. 发明申请

WO2013012423A1 MEMRISTOR STRUCTURE WITH A DOPANT SOURCE 审中-公开
标题翻译：具有铒源的电容结构
公开(公告)号：WO2013012423A1
公开(公告)日：2013-01-24
申请号：PCT/US2011/044734
申请日：2011-07-20
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , ZHANG, Minxian Max , YANG, Jianhua , WILLIAMS, R. Stanley
发明人： ZHANG, Minxian Max , YANG, Jianhua , WILLIAMS, R. Stanley
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L45/1658 , G11C13/0007 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1266 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147
摘要： A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.
摘要翻译：公开了一种包括掺杂剂源的忆阻器。该结构包括电极，包括导电材料的导电合金，掺杂剂源材料和掺杂剂，以及位于电极和导电合金之间的开关层，其中开关层包括电子半导体或标称绝缘和弱离子开关材料。还公开了一种用于制造包括掺杂剂源的忆阻器的方法。

7. 发明申请

WO2012118481A1 MEMRISTIVE ELEMENTS THAT EXHIBIT MINIMAL SNEAK PATH CURRENT 审中-公开
标题翻译：显示最小的路径流动的电磁元件
公开(公告)号：WO2012118481A1
公开(公告)日：2012-09-07
申请号：PCT/US2011/026532
申请日：2011-02-28
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , ZHANG, Minxian Max , WILLIAMS, R. Stanley
发明人： YANG, Jianhua , ZHANG, Minxian Max , WILLIAMS, R. Stanley
IPC分类号： H01L27/02 , H01L27/10
CPC分类号： H01L45/145 , H01L27/0688 , H01L27/101 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： Memristive elements are provided that include an active region disposed between a first electrode and a second electrode, the active region including two switching layers formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Memristive elements also are provided that include two active regions disposed between a first electrode and a second electrode, and a third electrode being disposed between and in electrical contact with both of the active regions. Each of the active regions include a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Multilayer structures including the memristive elements also are provided.
摘要翻译：提供了忆阻元件，其包括设置在第一电极和第二电极之间的有源区，该有源区包括由能够承载一种掺杂剂的开关材料和由掺杂剂源材料形成的导电层形成的两个开关层。还提供还包括设置在第一电极和第二电极之间的两个有源区，以及设置在两个有源区之间并与之电接触的第三电极的还忆元件。每个有源区包括由能够承载一种掺杂剂的开关材料和由掺杂剂源材料形成的导电层形成的开关层。还提供了包括忆阻元件在内的多层结构。

8. 发明申请

WO2011025506A1 LOW-POWER NANOSCALE SWITCHING DEVICE WITH AN AMORPHOUS SWITCHING MATERIAL 审中-公开
标题翻译：具有非均质切换材料的低功耗纳米开关器件
公开(公告)号：WO2011025506A1
公开(公告)日：2011-03-03
申请号：PCT/US2009/055538
申请日：2009-08-31
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , WILLIAMS, R. Stanley , RIBEIRO, Gilberto
发明人： YANG, Jianhua , WILLIAMS, R. Stanley , RIBEIRO, Gilberto
IPC分类号： H01H1/021 , H01H1/04
CPC分类号： G11C13/0007 , B82Y10/00 , G11C13/0009 , G11C13/0069 , G11C2013/0073 , G11C2213/15 , G11C2213/77 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/148 , H01L45/1625
摘要： A nanoscale switching device exhibits multiple desired properties including a low switching current level, being electroforming-free, and cycling endurance. The switching device has an active region disposed between two electrodes. The active region contains a switching material capable of transporting dopants under an electric field. The switching material is in an amorphous state and formed by deposition at or below room temperature.
摘要翻译：纳米级开关器件表现出多种所需性能，包括低开关电流电平，无电铸和循环耐久性。开关装置具有设置在两个电极之间的有源区域。有源区域包含能够在电场下输送掺杂剂的开关材料。开关材料处于非晶状态并通过在室温或室温下沉积而形成。

9. 发明申请

WO2011133138A1 NANOSCALE SWITCHING DEVICES WITH PARTIALLY OXIDIZED ELECTRODES 审中-公开
标题翻译：具有部分氧化电极的纳米开关器件
公开(公告)号：WO2011133138A1
公开(公告)日：2011-10-27
申请号：PCT/US2010/031639
申请日：2010-04-19
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , GILBERTO, Ribeiro , WILLIAMS, R. Stanley
发明人： YANG, Jianhua , GILBERTO, Ribeiro , WILLIAMS, R. Stanley
IPC分类号： H01L21/332
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/1253 , H01L45/146 , Y10S438/90
摘要： A nanoscale switching device (200) is provided. The device comprises: a first electrode (110) of a nanoscale width; a second electrode (120) of a nanos-cale width; an active region (122) disposed between the first and second elec-trodes, the active region having a non-conducting portion (122a) comprising an electronically semiconducting or nominally insulating and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field and a source portion (122b) that acts as a source or sink for the dopants; and an oxide layer (115, 125) either formed on the first electrode, between the first electrode and the active region or formed on the second electrode, between the second electrode and the active region. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.
摘要翻译：提供了一种纳米级切换装置（200）。该装置包括：纳米级宽度的第一电极（110）具有纳秒级宽度的第二电极（120）; 设置在第一和第二电极之间的有源区（122），有源区具有非导电部分（122a），该导电部分包括电子半导体或标称绝缘以及能够承载一种掺杂剂的弱离子导体开关材料，在电场下传输掺杂剂和用作掺杂剂的源或阱的源极部分（122b）; 或者形成在第一电极之间，第一电极和有源区之间，或形成在第二电极上，在第二电极和有源区之间的氧化物层（115,125）。还提供了包括多个纳米级切换装置的交叉开关阵列。还提供了制造至少一个纳米级切换装置的方法。

10. 发明申请

WO2011028208A1 MEMRISTORS BASED ON MIXED-METAL-VALENCE COMPOUNDS 审中-公开
标题翻译：基于混合金属化合物的成像仪
公开(公告)号：WO2011028208A1
公开(公告)日：2011-03-10
申请号：PCT/US2009/056022
申请日：2009-09-04
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , WILLIAMS, R. Stanley , YANG, Jianhua , PICKETT, Matthew , RIBEIRO, Gilberto , STRACHAN, John Paul
发明人： WILLIAMS, R. Stanley , YANG, Jianhua , PICKETT, Matthew , RIBEIRO, Gilberto , STRACHAN, John Paul
IPC分类号： H01L29/40
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/003 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , H01L29/8615 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A memristor (100, 100', 100") based on mixed-metal-valence compounds comprises: a first electrode (115); a second electrode (120); a layer (105) of a mixed-metal-valence phase in physical contact with at least one layer (110, 110a, 110b) of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field (125). One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer (110a) of a fully oxidized phase and the other is in electrical contact with the layer (or other layer (110b)) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode (100') and an ON-switched diode (100") are also provided. A method of operating the memristor is further provided.
摘要翻译：基于混合金属化合物的忆阻器（100,100'，100“）包括：第一电极（115）;第二电极（120）;物理上的混合金属价态的层（105）与完全氧化相的至少一层（110,1 110a，110b）接触，混合金属价相基本上是完全氧化相的掺杂剂的凝结相，其在响应中漂入和流出完全氧化相第一和第二电极中的一个与混合金属价相的层或完全氧化相的层（110a）电接触，另一个与电接触与完全氧化相的层（或其他层（110b））形成。忆阻器通过以任何顺序形成混合金属价态相和完全氧化相的层而制备。还提供了可逆二极管（100'）和导通开关二极管（100“）。还提供了一种操作忆阻器的方法。

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