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1. 发明申请

WO2012084656A1 CONTROLLING DOPING OF SYNTHETIC DIAMOND MATERIAL 审中-公开
标题翻译：控制合成金刚石材料的掺杂
公开(公告)号：WO2012084656A1
公开(公告)日：2012-06-28
申请号：PCT/EP2011/072820
申请日：2011-12-14
申请人： ELEMENT SIX LIMITED , COE, Steven Edward , WILMAN, Jonathan James , TWITCHEN, Daniel James , SCARSBROOK, Geoffrey Alan , BRANDON, John Robert , WORT, Christopher John Howard , MARKHAM, Matthew Lee
发明人： COE, Steven Edward , WILMAN, Jonathan James , TWITCHEN, Daniel James , SCARSBROOK, Geoffrey Alan , BRANDON, John Robert , WORT, Christopher John Howard , MARKHAM, Matthew Lee
IPC分类号： H01J37/32 , C30B29/04
CPC分类号： C30B25/14 , C01B32/25 , C23C16/274 , C23C16/278 , C30B25/02 , C30B25/165 , C30B29/04 , H01J37/32192 , H01J37/32449
摘要： A method of manufacturing synthetic CVD diamond material, the method comprising: providing a microwave plasma reactor comprising: a plasma chamber; one or more substrates disposed in the plasma chamber providing a growth surface area over which the synthetic CVD diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, injecting process gases into the plasma chamber; feeding microwaves from the microwave generator into the plasma chamber through the microwave coupling configuration to form a plasma above the growth surface area; and growing synthetic CVD diamond material over the growth surface area, wherein the process gases comprise at least one dopant in gaseous form, selected from a one or more of boron, silicon, sulphur, phosphorous, lithium and beryllium at a concentration equal to or greater than 0.01 ppm and/or nitrogen at a concentration equal to or greater than 0.3 ppm, wherein the gas flow system includes a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area, and wherein the process gases are injected towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cm 3 per minute and/or wherein the process gases are injected into the plasma chamber through the or each gas inlet nozzle with a Reynolds number a Reynolds number in a range 1 to 100.
摘要翻译：一种制造合成CVD金刚石材料的方法，所述方法包括：提供微波等离子体反应器，包括：等离子体室; 设置在等离子体室中的一个或多个衬底提供在使用中沉积合成CVD金刚石材料的生长表面区域; 用于将微波从微波发生器馈入等离子体室的微波耦合配置; 以及用于将工艺气体进料到等离子体室中并将其从其中除去的气体流系统，将工艺气体注入到等离子体室中; 通过微波耦合配置将微波从微波发生器馈送到等离子体室中，以在生长表面积之上形成等离子体; 以及在所述生长表面积上生长的合成CVD金刚石材料，其中所述工艺气体包含至少一种气体形式的掺杂剂，其选自硼，硅，硫，磷，锂和铍中的一种或多种，其浓度等于或大于处于浓度等于或大于0.3ppm的0.01ppm和/或氮气，其中所述气体流动系统包括气体入口，所述气体入口包括与生长表面区域相对设置的一个或多个气体入口喷嘴，并且被配置为朝着生长表面注入工艺气体并且其中所述工艺气体以等于或大于500标准立方厘米/分钟的总气体流速向所述生长表面区域注入，和/或其中所述工艺气体通过所述或每个气体入口喷嘴注入所述等离子体室雷诺数雷诺数在1到100之间。

2. 发明申请

WO2011161190A1 SUBSTRATES FOR SEMICONDUCTOR DEVICES 审中-公开
标题翻译：半导体器件基板
公开(公告)号：WO2011161190A1
公开(公告)日：2011-12-29
申请号：PCT/EP2011/060503
申请日：2011-06-22
申请人： ELEMENT SIX LIMITED , THE UNIVERSITY OF BATH , MOLLART, Timothy, Peter , WILMAN, Jonathan, James , DODSON, Joseph, Michael , BALMER, Richard, Stuart , EDWARDS, Michael, John , BOWEN, Christopher, Rhys , ALLSOP, Duncan, William, Edward , LIU, Chaowang
发明人： MOLLART, Timothy, Peter , WILMAN, Jonathan, James , DODSON, Joseph, Michael , BALMER, Richard, Stuart , EDWARDS, Michael, John , BOWEN, Christopher, Rhys , ALLSOP, Duncan, William, Edward , LIU, Chaowang
IPC分类号： H01L21/20 , H01L21/762 , H01L21/02
CPC分类号： H01L21/02378 , C23C16/274 , C30B25/02 , C30B29/04 , C30B29/06 , C30B29/36 , H01L21/02381 , H01L21/02527 , H01L21/02595 , H01L21/2007
摘要： A method of manufacturing a composite substrate for a semiconductor device, the method comprising: selecting a wafer comprising single crystal silicon or silicon carbide, the wafer having a thickness in a range 0.3 mm to 2.0 mm; growing a polycrystalline diamond layer on the wafer using a chemical vapour deposition technique at a first temperature in a range 700°C to 1200°C to form a composite comprising the wafer bonded to the polycrystalline diamond layer, the polycrystalline diamond layer having a thickness in a range 50 μm to 150 μm; heating or cooling the composite to a second temperature to generate a strain field in the wafer which is sufficient to enable cleavage of the wafer at a distance of 15 μm or less from an interface with the polycrystalline diamond layer while being low enough to avoid the wafer fragmenting and/or the polycrystalline diamond layer cracking; and cleaving the wafer at a distance of 15 μm or less from an interface with the polycrystalline diamond layer to release strain energy and form a composite substrate comprising the polycrystalline diamond layer directly bonded to a cleaved layer comprising single crystal silicon or silicon carbide, the cleaved layer having a thickness of 15 μm or less.
摘要翻译：一种制造半导体器件的复合衬底的方法，所述方法包括：选择包括单晶硅或碳化硅的晶片，所述晶片的厚度在0.3mm至2.0mm的范围内; 使用化学气相沉积技术在700℃至1200℃的第一温度下在晶片上生长多晶金刚石层，以形成包含与多晶金刚石层结合的晶片的复合物，多晶金刚石层的厚度为范围在50μm至150μm之间; 将复合材料加热或冷却至第二温度以在晶片中产生足够的应变场，该应变场足以使得能够从与多晶金刚石层的界面在15μm或更小的距离处切割晶片，同时足够低以避免晶片破碎和/或多晶金刚石层开裂; 并从与多晶金刚石层的界面15μm或更小的距离处切割晶片以释放应变能并形成包括直接结合到包含单晶硅或碳化硅的切割层的多晶金刚石层的复合衬底，所述切割的层的厚度为15μm以下。

3. 发明申请

WO2012084661A1 A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL 审中-公开
标题翻译：用于制造合成金刚石材料的微波等离子体反应器
公开(公告)号：WO2012084661A1
公开(公告)日：2012-06-28
申请号：PCT/EP2011/072825
申请日：2011-12-14
申请人： ELEMENT SIX LIMITED , COE, Steven Edward , WILMAN, Jonathan James , TWITCHEN, Daniel James , SCARSBROOK, Geoffrey Alan , BRANDON, John Robert , WORT, Christopher John Howard
发明人： COE, Steven Edward , WILMAN, Jonathan James , TWITCHEN, Daniel James , SCARSBROOK, Geoffrey Alan , BRANDON, John Robert , WORT, Christopher John Howard
IPC分类号： H01J37/32 , C30B29/04
CPC分类号： C23C16/45563 , C23C16/274 , C23C16/45504 , C23C16/45565 , C23C16/511 , C30B25/105 , C30B29/04 , H01J37/32192 , H01J37/32238 , H01J37/3244 , H01J37/32449
摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the gas flow system comprises a gas inlet nozzle array comprising a plurality of gas inlet nozzles disposed opposite the substrate holder for directing process gases towards the substrate holder, the gas inlet nozzle array comprising: at least six gas inlet nozzles disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber; a gas inlet nozzle number density equal to or greater than 0.1 nozzles/cm 2 , wherein the gas inlet nozzle number density is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber and measuring the gas inlet number density on said plane;and a nozzle area ratio of equal to or greater than 10, whereinthe nozzle area ratio is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber, measuring the total area of the gas inlet nozzle area on said plane, dividing by the total number of nozzles to give an area associated with each nozzle, and dividing the area associated with each nozzle by an actual area of each nozzle.
摘要翻译：一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：等离子体室; 设置在等离子体室中的衬底保持器，用于支撑在使用中沉积合成金刚石材料的衬底; 用于将微波从微波发生器馈入等离子体室的微波耦合配置; 以及用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 其中所述气体流动系统包括气体入口喷嘴阵列，所述气体入口喷嘴阵列包括与所述衬底保持器相对设置的多个气体入口喷嘴，用于将工艺气体引向所述衬底保持器，所述气体入口喷嘴阵列包括：至少六个气体入口喷嘴，或相对于等离子体室的中心轴线的发散取向; 气体入口喷嘴数密度等于或大于0.1喷嘴/ cm2，其中气体入口喷嘴数密度通过将喷嘴投影到平行于等离子体室的中心轴线的平面上并测量气体入口数所述平面上的密度;以及等于或大于10的喷嘴面积比，其中喷嘴面积比通过将喷嘴投射到平行于等离子体室的中心轴线的平面上测量，测量总面积在所述平面上的气体入口喷嘴面积除以总喷嘴数量以给出与每个喷嘴相关联的区域，并且将与每个喷嘴相关联的区域除以每个喷嘴的实际面积。

4. 发明申请

WO2008029258A2 SOLID ELECTRODE 审中-公开
标题翻译：固体电极
公开(公告)号：WO2008029258A2
公开(公告)日：2008-03-13
申请号：PCT/IB2007/002561
申请日：2007-09-05
申请人： ELEMENT SIX LIMITED , WILMAN, Jonathan James , BRAY, Patrick Simon , MOLLART, Timothy Peter
发明人： WILMAN, Jonathan James , BRAY, Patrick Simon , MOLLART, Timothy Peter
IPC分类号： C25B11/12 , C02F1/461 , C02F1/467
CPC分类号： C02F1/46109 , C02F1/4672 , C02F2001/46128 , C02F2001/46133 , C02F2001/46147 , C02F2103/343 , C02F2201/46115 , C25B11/12
摘要： The present invention provides a solid diamond electrode, a reactor, in particular a reactor comprising an anode, a cathode and at least one bipolar electrode having first and second major working surfaces positioned therebetween wherein the at least one bipolar electrode consists essentially of diamond, and methods in which the reactors are used.
摘要翻译：本发明提供一种固体金刚石电极，一种反应器，特别是一种包括阳极，阴极和至少一个双极电极的反应器，其中第一和第二主要工作表面位于其间，其中至少一个双极电极基本上由金刚石和使用反应器的方法。

5. 发明申请

WO2012034925A1 DIAMOND ELECTRODES FOR ELECTROCHEMCIAL DEVICES 审中-公开
标题翻译：电子器件用金刚石电极
公开(公告)号：WO2012034925A1
公开(公告)日：2012-03-22
申请号：PCT/EP2011/065574
申请日：2011-09-08
申请人： ELEMENT SIX LIMITED , MOLLART, Timothy Peter , BRANDON, John Robert , WILMAN, Jonathan James
发明人： MOLLART, Timothy Peter , BRANDON, John Robert , WILMAN, Jonathan James
IPC分类号： C25B11/12 , C02F1/461 , C25B11/03
CPC分类号： C02F1/46109 , C02F1/4672 , C02F2001/46133 , C02F2001/46152 , C02F2201/46105 , C23C16/28 , C23C16/56 , C25B11/03 , C25B11/12 , C25D17/10
摘要： A bulk boron doped diamond electrode comprising a plurality of grooves disposed in a surface of the bulk boron doped diamond electrode. The bulk boron doped diamond electrode is formed by growing a bulk boron doped diamond electrode using a chemical vapour deposition technique and forming a plurality of grooves in a surface of the bulk boron doped diamond electrode. According to one arrangement, the plurality of grooves are formed by forming a pattern of carbon solvent metal over a surface of the bulk boron doped diamond electrode and heating whereby the carbon solvent metal dissolves underlying diamond to form grooves in the surface of the bulk boron doped electrode. The invention also relates to an electrochemical cell comprising one or more grooved bulk boron doped diamond electrodes. The or each bulk boron doped diamond electrode is oriented within the electrochemical device such that the grooves are aligned in a direction substantially parallel to a direction of electrolyte flow.
摘要翻译：一种体积硼掺杂的金刚石电极，其包括设置在体积掺杂硼的金刚石电极的表面中的多个凹槽。通过使用化学气相沉积技术生长体积掺杂硼的金刚石电极并在体积硼掺杂的金刚石电极的表面中形成多个凹槽来形成体积掺杂硼的金刚石电极。根据一种布置，通过在体积硼掺杂的金刚石电极的表面上形成碳溶剂金属的图案并加热形成多个凹槽，由此碳溶剂金属溶解下面的金刚石以在体积硼掺杂的表面中形成凹槽电极。本发明还涉及一种电化学电池，其包括一个或多个带槽的体积硼掺杂金刚石电极。所述或每个体积硼掺杂的金刚石电极在所述电化学装置内取向，使得所述凹槽在基本上平行于电解质流动方向的方向上排列。

6. 发明申请

WO2008029258A3 SOLID ELECTRODE 审中-公开
标题翻译：固体电极
公开(公告)号：WO2008029258A3
公开(公告)日：2008-05-29
申请号：PCT/IB2007002561
申请日：2007-09-05
申请人： ELEMENT SIX LTD , WILMAN JONATHAN JAMES , BRAY PATRICK SIMON , MOLLART TIMOTHY PETER
发明人： WILMAN JONATHAN JAMES , BRAY PATRICK SIMON , MOLLART TIMOTHY PETER
IPC分类号： C25B11/12 , C02F1/461 , C02F1/467
CPC分类号： C02F1/46109 , C02F1/4672 , C02F2001/46128 , C02F2001/46133 , C02F2001/46147 , C02F2103/343 , C02F2201/46115 , C25B11/12
摘要： The present invention provides a solid diamond electrode, a reactor (20), in particular a reactor comprising an anode (30), a cathode (32) and at least one bipolar electrode (26) having first and second major working surfaces positioned therebetween wherein the at least one bipolar electrode (26) consists essentially of diamond, and methods in which the reactors are used.
摘要翻译：本发明提供一种固体金刚石电极，反应器（20），特别是包括阳极（30），阴极（32）和至少一个双极电极（26）的反应器，其中第一和第二主要工作表面位于其间，其中所述至少一个双极电极（26）基本上由金刚石组成，以及其中使用反应器的方法。

7. 发明申请

WO2012034925A8 DIAMOND ELECTRODES FOR ELECTROCHEMICAL DEVICES 审中-公开
标题翻译：电化学设备用金刚石电极
公开(公告)号：WO2012034925A8
公开(公告)日：2013-06-06
申请号：PCT/EP2011065574
申请日：2011-09-08
申请人： ELEMENT SIX LTD , MOLLART TIMOTHY PETER , BRANDON JOHN ROBERT , WILMAN JONATHAN JAMES
发明人： MOLLART TIMOTHY PETER , BRANDON JOHN ROBERT , WILMAN JONATHAN JAMES
IPC分类号： C25B11/12 , C02F1/461 , C25B11/03
CPC分类号： C02F1/46109 , C02F1/4672 , C02F2001/46133 , C02F2001/46152 , C02F2201/46105 , C23C16/28 , C23C16/56 , C25B11/03 , C25B11/12 , C25D17/10
摘要： A bulk boron doped diamond electrode comprising a plurality of grooves disposed in a surface of the bulk boron doped diamond electrode. The bulk boron doped diamond electrode is formed by growing a bulk boron doped diamond electrode using a chemical vapour deposition technique and forming a plurality of grooves in a surface of the bulk boron doped diamond electrode. According to one arrangement, the plurality of grooves are formed by forming a pattern of carbon solvent metal over a surface of the bulk boron doped diamond electrode and heating whereby the carbon solvent metal dissolves underlying diamond to form grooves in the surface of the bulk boron doped electrode. The invention also relates to an electrochemical cell comprising one or more grooved bulk boron doped diamond electrodes. The or each bulk boron doped diamond electrode is oriented within the electrochemical device such that the grooves are aligned in a direction substantially parallel to a direction of electrolyte flow.
摘要翻译：一种体积硼掺杂的金刚石电极，其包括设置在体积掺杂硼的金刚石电极的表面中的多个凹槽。通过使用化学气相沉积技术生长体积掺杂硼的金刚石电极并在体积硼掺杂的金刚石电极的表面中形成多个凹槽来形成体积掺杂硼的金刚石电极。根据一种布置，通过在体积硼掺杂的金刚石电极的表面上形成碳溶剂金属的图案并加热形成多个凹槽，由此碳溶剂金属溶解下面的金刚石以在体积硼掺杂的表面中形成凹槽电极。本发明还涉及一种电化学电池，其包括一个或多个带槽的体积硼掺杂金刚石电极。所述或每个体积硼掺杂的金刚石电极在所述电化学装置内取向，使得所述凹槽在基本上平行于电解质流动方向的方向上排列。

8. 发明申请

WO2012084660A1 A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL 审中-公开
标题翻译：用于制造合成金刚石材料的微波等离子体反应器
公开(公告)号：WO2012084660A1
公开(公告)日：2012-06-28
申请号：PCT/EP2011/072824
申请日：2011-12-14
申请人： ELEMENT SIX LIMITED , BRANDON, John, Robert , CULLEN, Alexander, Lamb , WILLIAMS, Stephen, David , DODSON, Joseph, Michael , WILMAN, Jonathan, James , WORT, Christopher, John, Howard
发明人： BRANDON, John, Robert , CULLEN, Alexander, Lamb , WILLIAMS, Stephen, David , DODSON, Joseph, Michael , WILMAN, Jonathan, James , WORT, Christopher, John, Howard
IPC分类号： H01J37/32 , C23C16/511
CPC分类号： H01J37/32458 , C23C16/274 , C23C16/511 , H01J37/32192 , H01J37/32284
摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode, wherein the resonance cavity has a central rotational axis of symmetry extending from the base to the top plate, and wherein the top plate is mounted across said central rotational axis of symmetry; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use; wherein the resonance cavity is configured to have a height, as measured from the base to the top plate of the plasma chamber, which supports a TM 011 resonant mode between the base and the top plate at said frequency f, and wherein the resonance cavity is further configured to have a diameter, as measured at a height less than 50% of the height of the resonance cavity as measured from the base, which satisfies the condition that a ratio of the resonance cavity height / the resonance cavity diameter is in the range 0.3 to 1.0.
摘要翻译：一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：微波发生器，被配置为以频率f产生微波; 等离子体室，包括基底，顶板和从所述底座延伸到所述顶板的侧壁，所述侧壁限定用于支撑微波共振模式的谐振腔，其中所述谐振腔具有从所述底座延伸到对称的中心旋转对称轴线顶板，并且其中顶板穿过所述中心旋转对称轴线安装; 用于将微波从微波发生器馈送到等离子体室中的微波耦合配置; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 以及衬底保持器，其设置在所述等离子体室中，并且包括支撑表面，所述支撑表面用于支撑在使用中沉积所述合成金刚石材料的基底; 其中所述谐振腔被配置为具有从所述等离子体室的所述基板到所述顶板测量的高度，所述高度在所述频率f处支撑所述基座和所述顶板之间的TM011谐振模式，并且其中所述谐振腔进一步被配置为具有在从底部测量的高度小于谐振腔的高度的50％的高度处测量的直径，其满足谐振腔高度/谐振腔直径的比率在0.3范围内的条件到1.0。

9. 发明申请

WO2012084657A1 A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL 审中-公开
标题翻译：用于制造合成金刚石材料的微波等离子体反应器
公开(公告)号：WO2012084657A1
公开(公告)日：2012-06-28
申请号：PCT/EP2011/072821
申请日：2011-12-14
申请人： ELEMENT SIX LIMITED , SCARSBROOK, Geoffrey Alan , WILMAN, Jonathan James , DODSON, Joseph Michael , BRANDON, John Robert , COE, Steven Edward , WORT, Christopher John Howard
发明人： SCARSBROOK, Geoffrey Alan , WILMAN, Jonathan James , DODSON, Joseph Michael , BRANDON, John Robert , COE, Steven Edward , WORT, Christopher John Howard
IPC分类号： H01J37/32 , C23C16/27
CPC分类号： C23C16/274 , C01B32/25 , C23C16/511 , C30B25/105 , C30B29/04 , H01J37/32192 , H01J37/32642 , H01J2237/339
摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the microwave plasma reactor further comprises an electrically conductive plasma stabilizing annulus disposed around the substrate holder within the plasma chamber.
摘要翻译：一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：等离子体室; 衬底保持器，其设置在所述等离子体室中，并且包括支撑表面，所述支撑表面用于支撑在其上沉积合成金刚石材料的基底; 用于将微波从微波发生器馈入等离子体室的微波耦合配置; 以及用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 其中微波等离子体反应器还包括设置在等离子体室内的衬底保持器周围的导电等离子体稳定环。

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