会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • A MEMS RESONATOR, A METHOD OF MANUFACTURING THEREOF, AND A MEMS OSCILLATOR
    • MEMS谐振器,其制造方法和MEMS振荡器
    • WO2007072409A3
    • 2007-10-18
    • PCT/IB2006054931
    • 2006-12-18
    • NXP BVVAN BEEK JOZEF T MLOEBL HANS-PETERVANHELMONT FREDERIK W M
    • VAN BEEK JOZEF T MLOEBL HANS-PETERVANHELMONT FREDERIK W M
    • H03H9/02H03H3/007H03H9/24
    • H03H9/02448H03H3/0072H03H9/2447H03H2009/02496Y10T29/42
    • The invention relates to a MEMS resonator comprising a movable element (48), the movable element (48) comprising a first part (A) having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and the movable element (48) further comprising a second part (B) having a second Young's modulus and a second temperature coefficient of the second Young's modulus, a sign of the second temperature coefficient being opposite to a sign of the first temperature coefficient, at least, at operating conditions of the MEMS resonator, and a cross-sectional area of the first part (A) and the cross-sectional area of the second part (B) being such that the absolute temperature coefficient of the Young's modulus of the first part (A) multiplied by the cross-sectional area of the first part (A) does not deviate more than 20% from the absolute temperature coefficient of the Young's modulus of the second part (B) multiplied by the cross-sectional area of the second part (B), the cross-sectional areas being measured locally and perpendicularly to the movable element (48).
    • 本发明涉及一种包括可移动元件(48)的MEMS谐振器,所述可移动元件(48)包括具有第一杨氏模量和第一杨氏模量的第一温度系数的第一部分(A)和可移动元件(48) )还包括具有第二杨氏模量和第二杨氏模量的第二温度系数的第二部分(B),所述第二温度系数的符号与所述第一温度系数的符号相反,至少在 所述MEMS谐振器以及所述第一部分(A)的横截面面积和所述第二部分(B)的横截面面积使得所述第一部分(A)的杨氏模量的绝对温度系数乘以 第一部分(A)的横截面面积与第二部分(B)的杨氏模量的绝对温度系数乘以第二部分(B)的横截面积不相差大于20% 横截面面积被局部地和垂直于可移动元件(48)测量。
    • 2. 发明申请
    • A MEMS RESONATOR, A METHOD OF MANUFACTURING THEREOF, AND A MEMS OSCILLATOR
    • MEMS谐振器,其制造方法以及MEMS振荡器
    • WO2007072409A2
    • 2007-06-28
    • PCT/IB2006/054931
    • 2006-12-18
    • NXP B.V.VAN BEEK, Jozef, T., M.LOEBL, Hans-PeterVANHELMONT, Frederik, W., M.
    • VAN BEEK, Jozef, T., M.LOEBL, Hans-PeterVANHELMONT, Frederik, W., M.
    • H03H9/02H03H3/007
    • H03H9/02448H03H3/0072H03H9/2447H03H2009/02496Y10T29/42
    • The invention relates to a MEMS resonator comprising a movable element (48), the movable element (48) comprising a first part (A) having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and the movable element (48) further comprising a second part (B) having a second Young's modulus and a second temperature coefficient of the second Young's modulus, a sign of the second temperature coefficient being opposite to a sign of the first temperature coefficient, at least, at operating conditions of the MEMS resonator, and a cross-sectional area of the first part (A) and the cross-sectional area of the second part (B) being such that the absolute temperature coefficient of the Young's modulus of the first part (A) multiplied by the cross-sectional area of the first part (A) does not deviate more than 20% from the absolute temperature coefficient of the Young's modulus of the second part (B) multiplied by the cross-sectional area of the second part (B), the cross-sectional areas being measured locally and perpendicularly to the movable element (48).
    • 本发明涉及一种包括可移动元件(48)的MEMS谐振器,可移动元件(48)包括具有第一杨氏模量和第一杨氏模量的第一温度系数的第一部分(A) 并且所述可移动元件(48)还包括具有第二杨氏模量和第二杨氏模量的第二温度系数的第二部分(B),所述第二温度系数的符号与所述第一温度系数的符号相反 至少在MEMS谐振器的操作条件下,第一部分(A)的横截面积和第二部分(B)的横截面积使得杨氏模量的绝对温度系数 第一部分(A)乘以第一部分(A)的横截面积与第二部分(B)的杨氏模量的绝对温度系数乘以横截面积的偏差不超过20% 的秒 (B),所述横截面积局部地且垂直于所述可移动元件(48)测量。
    • 6. 发明申请
    • MEMS RESONATOR FOR FILTERING AND MIXING
    • 用于滤波和混合的MEMS谐振器
    • WO2009153754A3
    • 2010-05-27
    • PCT/IB2009052614
    • 2009-06-18
    • NXP BVSTEENEKEN PETER GERARDVAN BEEK JOZEF T MREIMANN KLAUS
    • STEENEKEN PETER GERARDVAN BEEK JOZEF T MREIMANN KLAUS
    • H03D7/00
    • H03D7/00H03H9/02259H03H9/02275H03H9/2452H03H9/465H03H2009/02496H03H2009/2442
    • A method of operating a micro-electromechanical system, comprising a resonator; an actuation electrode; and a first detection electrode, to filter and mix a plurality of signals. The method comprises applying a first alternating voltage signal to the actuation electrode, wherein an actuation force is generated having a frequency bandwidth that is greater than and includes a resonant bandwidth of a mechanical frequency response of the resonator, and wherein a displacement of the resonator is produced which is filtered by the mechanical frequency response and varies a value of an electrical characteristic of the first detection electrode. The method also comprises applying a second alternating voltage signal to the first detection electrode, wherein the second voltage signal is mixed with the varying value to produce a first alternating current signal. The first alternating current signal is detected at the first detection electrode.
    • 一种操作微机电系统的方法,包括谐振器; 致动电极; 和第一检测电极,以过滤和混合多个信号。 该方法包括向致动电极施加第一交流电压信号,其中产生具有大于并包括谐振器的机械频率响应的谐振带宽的频率带宽的致动力,并且其中谐振器的位移为 产生的,其被机械频率响应过滤,并且改变第一检测电极的电特性的值。 该方法还包括向第一检测电极施加第二交流电压信号,其中第二电压信号与变化值混合以产生第一交流信号。 在第一检测电极处检测第一交流信号。
    • 7. 发明申请
    • METHOD FOR MANUFACTURING MEMS DEVICES WITH MOVEABLE STRUCTURE
    • 用于制造具有移动结构的MEMS器件的方法
    • WO2008001252A3
    • 2008-02-21
    • PCT/IB2007052269
    • 2007-06-14
    • NXP BVVAN VELZEN BARTVAN BEEK JOZEF T MKNOTTER DIRK M
    • VAN VELZEN BARTVAN BEEK JOZEF T MKNOTTER DIRK M
    • B81B3/00
    • B81C1/00952B81B3/001B81C2201/0109
    • After the release etch of MEMS structures stiction is a well-known problem. Especially for the buried oxide etch on SOI wafers because of the very flat surfaces. Methods to prevent stiction are etching with an etch liquid but the wafers are dried in a CPD tool or alternatively etching with a vapor. However these methods require special equipment and are only effective for the release etch. A simple method for the formation of anti-stiction structures is described in order to prevent direct mechanical contact. The buried oxide is etched in a controlled way and stopped before the buried oxide is totally etched away. The buried oxide residues form anti-stiction structures and prevent direct contact between the resonator and the substrate. For this method no special equipment is required and the process complexity is not increased.
    • MEMS结构静电释放蚀刻之后是众所周知的问题。 特别是对于SOI晶片上的掩埋氧化物蚀刻,因为非常平坦的表面。 防止静电的方法是用蚀刻液蚀刻,但是晶片在CPD工具中干燥,或者替代地用蒸气蚀刻。 然而,这些方法需要特殊的设备,并且仅对释放蚀刻有效。 描述了形成抗静电结构的简单方法,以防止直接的机械接触。 埋入的氧化物以受控的方式蚀刻并在埋入的氧化物被完全蚀刻掉之前停止。 掩埋氧化物残留物形成抗静电结构并防止谐振器和衬底之间的直接接触。 对于这种方法,不需要特殊设备,并且不增加过程复杂性。