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1. 发明申请

WO2010005866A1 METHOD OF MAKING A NONVOLATILE MEMORY DEVICE 审中-公开
标题翻译：制造非易失性存储器件的方法
公开(公告)号：WO2010005866A1
公开(公告)日：2010-01-14
申请号：PCT/US2009/049518
申请日：2009-07-02
申请人： SANDISK 3D LLC , PING, Er-xuan , THAKUR, Randhir , SCHEUGRAF, Klaus
发明人： PING, Er-xuan , THAKUR, Randhir , SCHEUGRAF, Klaus
IPC分类号： H01L27/10 , H01L27/102 , H01L21/768
CPC分类号： H01L27/1021 , H01L21/7688 , H01L27/101
摘要： A method of making a semiconductor device includes forming a pillar shaped semiconductor device surrounded by an insulating layer (108) such that a contact hole (111) in the insulating layer exposes an upper surface of the semiconductor device. The method also includes forming a shadow mask layer (302) over the insulating layer (108) such that a portion of the shadow mask layer (302) overhangs a portion of the contact hole (111), forming a conductive layer such that a first portion (304) of the conductive layer is located on the upper surface of the semiconductor device exposed in the contact hole and a second portion (306) of the conductive layer is located over the shadow mask layer (302), and removing the shadow mask layer (302) and the second portion (306) of the conductive layer.
摘要翻译：制造半导体器件的方法包括形成由绝缘层（108）围绕的柱状半导体器件，使得绝缘层中的接触孔（111）露出半导体器件的上表面。该方法还包括在绝缘层（108）上形成阴影掩模层（302），使得阴影掩模层（302）的一部分突出在接触孔（111）的一部分上，形成导电层，使得第一导电层的部分（304）位于暴露在接触孔中的半导体器件的上表面上，导电层的第二部分（306）位于荫罩层（302）的上方，并且去除荫罩层（302）和导电层的第二部分（306）。

2. 发明申请

WO2008076733A1 INTEGRATED VACUUM METROLOGY FOR CLUSTER TOOL 审中-公开
标题翻译：集成真空系统集成工具
公开(公告)号：WO2008076733A1
公开(公告)日：2008-06-26
申请号：PCT/US2007/087154
申请日：2007-12-12
申请人： APPLIED MATERIALS, INC. , COX, Damon, K. , EGAN, Todd , THAKUR, Randhir, P., S. , SAMOILOV, Arkadii , HANSSON, Per-Ove
发明人： COX, Damon, K. , EGAN, Todd , THAKUR, Randhir, P., S. , SAMOILOV, Arkadii , HANSSON, Per-Ove
IPC分类号： G06K9/00 , H01L21/66
CPC分类号： G01N21/33 , H01L21/67109 , H01L21/67115 , H01L21/67161 , H01L21/67167 , H01L21/67196 , H01L21/67207 , H01L21/67745
摘要： Aspects of the invention generally provide an apparatus and method for processing substrates using a multi-chamber processing system that is adapted to process substrates and analyze the results of the processes performed on the substrate. In one aspect of the invention, one or more analysis steps and/or pre-processing steps are performed on the substrate to provide data for processes performed on subsequent substrates. In one aspect of the invention, a system controller and one or more analysis devices are utilized to monitor and control a process chamber recipe and/or a process sequence to reduce substrate scrap due to defects in the formed device and device performance variability issues. Embodiments of the present invention also generally provide methods and a system for repeatably and reliably forming semiconductor devices used in a variety of applications.
摘要翻译：本发明的方面通常提供一种使用多室处理系统来处理衬底的装置和方法，所述多室处理系统适于处理衬底并分析在衬底上执行的工艺的结果。在本发明的一个方面，在衬底上执行一个或多个分析步骤和/或预处理步骤以提供在后续衬底上执行的处理的数据。在本发明的一个方面，系统控制器和一个或多个分析装置用于监测和控制处理室配方和/或处理顺序，以减少由于所形成的装置中的缺陷和装置性能变异性问题引起的衬底废料。本发明的实施例还通常提供了用于可重复且可靠地形成用于各种应用的半导体器件的方法和系统。

3. 发明申请

WO2008021746A3 METHODS FOR SURFACE ACTIVATION BY PLASMA IMMERSION ION IMPLANTATION PROCESS UTILIZED IN SILICON-ON-INSULATOR STRUCTURE 审中-公开
标题翻译：等离子体浸没离子注入工艺用于绝缘体上硅结构的表面活化方法
公开(公告)号：WO2008021746A3
公开(公告)日：2008-04-03
申请号：PCT/US2007075118
申请日：2007-08-02
申请人： APPLIED MATERIALS INC , THAKUR RANDHIR P S , MOFFATT STEPHEN , HANSSON PER-OVE , GHANAYEM STEVE
发明人： THAKUR RANDHIR P S , MOFFATT STEPHEN , HANSSON PER-OVE , GHANAYEM STEVE
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01J37/32412
摘要： Methods for promoting interface bonding energy utilized in SOI technology are provided. In one embodiment, the method for promoting interface bonding energy includes providing a first substrate and a second substrate, wherein the first substrate has a silicon oxide layer formed thereon and a cleavage plane defined therein, performing a dry cleaning process on a surface of the silicon oxide layer and a surface of the second substrate, and bonding the cleaned silicon oxide surface of the first substrate to the cleaned surface of the second substrate.
摘要翻译：提供了用于提高SOI技术中使用的界面键合能量的方法。在一个实施例中，促进界面结合能的方法包括提供第一衬底和第二衬底，其中第一衬底具有在其上形成的氧化硅层和限定在其中的解理平面，在硅的表面上执行干洗工艺氧化物层和第二衬底的表面，并且将第一衬底的清洁的氧化硅表面结合到第二衬底的清洁表面。

4. 发明申请

WO2011034751A2 HOT WIRE CHEMICAL VAPOR DEPOSITION (CVD) INLINE COATING TOOL 审中-公开
标题翻译：热线化学气相沉积（CVD）在线涂装工具
公开(公告)号：WO2011034751A2
公开(公告)日：2011-03-24
申请号：PCT/US2010047972
申请日：2010-09-07
申请人： APPLIED MATERIALS INC , HAAS DIETER , NARWANKAR PRAVIN K , THAKUR RANDHIR P S
发明人： HAAS DIETER , NARWANKAR PRAVIN K , THAKUR RANDHIR P S
IPC分类号： H01L21/205 , C23C16/54
CPC分类号： C23C16/24 , C23C16/54 , H01L21/02532 , H01L21/0262
摘要： Methods and apparatus for hot wire chemical vapor deposition (HWCVD) are provided herein. In some embodiments, an inline HWCVD tool may include a linear conveyor for moving a substrate through the linear process tool; and a multiplicity of HWCVD sources, the multiplicity of HWCVD sources being positioned parallel to and spaced apart from the linear conveyor and configured to deposit material on the surface of the substrate as the substrate moves along the linear conveyor; wherein the substrate is coated by the multiplicity of HWCVD sources without breaking vacuum. In some embodiments, methods of coating substrates may include depositing a first material from an HWCVD source on a substrate moving through a first deposition chamber; moving the substrate from the first deposition chamber to a second deposition chamber; and depositing a second material from a second HWCVD source on the substrate moving through the second deposition chamber.
摘要翻译：本文提供了热线化学气相沉积（HWCVD）的方法和装置。在一些实施例中，在线HWCVD工具可以包括用于通过线性处理工具移动衬底的线性输送机; 和多个HWCVD源，多个HWCVD源被定位成与线性传送器平行并与其间隔开，并且被配置为当衬底沿着线性传送器移动时将材料沉积在衬底的表面上; 其中所述衬底被多个HWCVD源涂覆而不破坏真空。在一些实施例中，涂覆基底的方法可以包括在移动通过第一沉积室的基底上沉积来自HWCVD源的第一材料; 将衬底从第一沉积室移动到第二沉积室; 以及将第二材料从第二HWCVD源沉积在移动通过第二沉积室的衬底上。

5. 发明申请

WO2009088914A3 STORAGE SUB-SYSTEM FOR A COMPUTER COMPRISING WRITE-ONCE MEMORY DEVICES AND WRITE-MANY MEMORY DEVICES AND RELATED METHOD 审中-公开
标题翻译：用于包含写入存储器件和写入多个存储器件的计算机的存储子系统及相关方法
公开(公告)号：WO2009088914A3
公开(公告)日：2009-09-03
申请号：PCT/US2008088616
申请日：2008-12-31
申请人： SANDISK 3D LLC , SCHEUERLEIN ROY E , THAKUR RANDHIR , MOORE CHISTOPHER
发明人： SCHEUERLEIN ROY E , THAKUR RANDHIR , MOORE CHISTOPHER
IPC分类号： G06F13/12 , G06F3/06 , G06F12/00 , G06F13/00
CPC分类号： G06F12/0638 , G06F11/1415 , G06F12/1425 , G06F2212/2142
摘要： Methods and apparatus for a solid state non-volatile storage sub-system of a computer is provided. The storage sub-system may include a write-once storage sub-system memory device and a write-many storage sub-system memory device. Numerous other aspects are provided.
摘要翻译：提供了一种计算机固态非易失性存储子系统的方法和装置。存储子系统可以包括一次写入存储子系统存储器设备和多写存储子系统存储器设备。提供了许多其他方面。

6. 发明申请

WO2008005773A3 CLUSTER TOOL FOR ADVANCED FRONT-END PROCESSING 审中-公开
标题翻译：用于高级前端处理的集群工具
公开(公告)号：WO2008005773A3
公开(公告)日：2008-02-28
申请号：PCT/US2007072264
申请日：2007-06-27
申请人： APPLIED MATERIALS INC , THAKUR RANDHIR , SAMOILOV ARKADII , HANSSON PER-OVE
发明人： THAKUR RANDHIR , SAMOILOV ARKADII , HANSSON PER-OVE
IPC分类号： H01L21/00
CPC分类号： H01L21/67745 , B08B7/0057 , C23C16/54 , H01L21/67115 , H01L21/6719 , H01L21/67196 , H01L21/67253
摘要： Aspects of the invention generally provide an apparatus and method for processing substrates using a multi-chamber processing system that is adapted to process substrates and analyze the results of the processes performed on the substrate. In one aspect of the invention, one or more analysis steps and/or precleaning steps are utilized to reduce the effect of queue time on device yield. In one aspect of the invention, a system controller and the one or more analysis chambers are utilized to monitor and control a process chamber recipe and/or a process sequence to reduce substrate scrap due to defects in the formed device and device performance variability issues. Embodiments of the present invention also generally provide methods and a system for repeatably and reliably forming semiconductor devices used in a variety of applications.
摘要翻译：本发明的方面通常提供一种用于使用多室处理系统来处理基板的设备和方法，所述多室处理系统适于处理基板并分析在基板上执行的处理的结果。在本发明的一个方面中，利用一个或多个分析步骤和/或预清洁步骤来减少排队时间对装置产量的影响。在本发明的一个方面中，利用系统控制器和一个或多个分析室来监视和控制处理室配方和/或处理顺序，以减少由于所形成的器件中的缺陷和器件性能变化性问题引起的衬底废料。本发明的实施例通常还提供用于可重复和可靠地形成在各种应用中使用的半导体器件的方法和系统。

7. 发明申请

WO2007011666A2 METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：半导体加工方法与装置
公开(公告)号：WO2007011666A2
公开(公告)日：2007-01-25
申请号：PCT/US2006027250
申请日：2006-07-14
申请人： APPLIED MATERIALS INC , THAKUR RANDHIR , SPLINTER MICHAEL
发明人： THAKUR RANDHIR , SPLINTER MICHAEL
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： H01L21/67184 , H01L21/67207
摘要： A method and apparatus for manufacturing semiconductors, comprising at least two transfer chambers with exterior walls, at least one holding chamber attached to the transfer chamber, at least one load lock chamber attached to the walls of the transfer chambers, and at least five process chambers attached to the walls of the transfer chambers. A method and apparatus of depositing a high dielectric constant film, comprising depositing a base oxide on a substrate in a first process chamber, providing decoupled plasma nitration to a surface of the substrate in at least one second process chamber, annealing the surface of the substrate in a third process chamber, and depositing polycrystalline silicon in at least one forth process chamber, wherein the first, second, third, and fourth process chambers are in fluid communication with a common interior chamber.
摘要翻译：一种用于制造半导体的方法和装置，包括具有外壁的至少两个传送室，连接到传送室的至少一个保持室，连接到传送室的壁的至少一个装载锁定室，以及至少五个处理室连接到转移室的壁上。一种沉积高介电常数膜的方法和装置，包括在第一处理室中的基底上沉积基底氧化物，在至少一个第二处理室中向衬底的表面提供解耦等离子体硝化，退火衬底的表面在第三处理室中，并且在至少一个第四处理室中沉积多晶硅，其中所述第一，第二，第三和第四处理室与公共内部室流体连通。

8. 发明申请

WO2006055984A2 SUBSTRATE PROCESSING APPARATUS USING A BATCH PROCESSING CHAMBER 审中-公开
标题翻译：使用批处理室的基板处理装置
公开(公告)号：WO2006055984A2
公开(公告)日：2006-05-26
申请号：PCT/US2005/042762
申请日：2005-11-22
申请人： APPLIED MATERIALS, INC. , THAKUR, Randhir, P.s. , GHANAYEM, Steve, G. , YUDOVSKY, Joseph , WEBB, Aaron , BRAILOVE, Adam, A. , MERRY, Nir , SHAH, Vinay, K. , HEGEDUS, Andreas, G.
发明人： THAKUR, Randhir, P.s. , GHANAYEM, Steve, G. , YUDOVSKY, Joseph , WEBB, Aaron , BRAILOVE, Adam, A. , MERRY, Nir , SHAH, Vinay, K. , HEGEDUS, Andreas, G.
IPC分类号： C12M3/00
CPC分类号： H01L21/67109 , C23C16/4412 , C23C16/45546 , C23C16/45593 , C23C16/4584 , C23C16/481 , C23C16/54 , H01L21/67017 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/67745 , H01L21/67757 , H01L21/67781
摘要： Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system ( e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput. In one embodiment, a system is configured to perform a substrate processing sequence that contains batch processing chambers only, or batch and single substrate processing chambers, to optimize throughput and minimize processing defects. In one embodiment, a batch processing chamber is used to increase the system throughput by performing a process recipe step that is disproportionately long compared to other process recipe steps in the substrate processing sequence. Aspects of the invention also include an apparatus and method for delivering a precursor to a processing chamber so that a repeatable ALD or CVD deposition process can be performed.
摘要翻译：本发明的方面包括使用适于在一个或多个批次和/或单个基板处理室中处理基板以增加系统吞吐量的多室处理系统（例如，集群工具）来处理基板的方法和装置。在一个实施例中，系统被配置为执行仅包含批处理室的衬底处理序列，或批处理和单个衬底处理室，以优化生产量并最小化处理缺陷。在一个实施例中，批处理室用于通过执行与衬底处理序列中的其它工艺配方步骤相比长度不成比例的工艺配方步骤来增加系统通过量。本发明的方面还包括用于将前体输送到处理室的装置和方法，使得可以执行可重复的ALD或CVD沉积工艺。

9. 发明申请

WO2011028349A3 REMOTE HYDROGEN PLASMA SOURCE OF SILICON CONTAINING FILM DEPOSITION 审中-公开
公开(公告)号：WO2011028349A3
公开(公告)日：2011-03-10
申请号：PCT/US2010/044133
申请日：2010-08-02
申请人： APPLIED MATERIALS, INC. , YUAN, Zheng , PANDIT, Mandar B. , SCHMITT, Francimar C. , ZHENG, Yi , YANG, Fan , LI, Lipan , TSO, Alan , HO, Dustin W. , CHO, Tom K. , THAKUR, Randhir
发明人： YUAN, Zheng , PANDIT, Mandar B. , SCHMITT, Francimar C. , ZHENG, Yi , YANG, Fan , LI, Lipan , TSO, Alan , HO, Dustin W. , CHO, Tom K. , THAKUR, Randhir
IPC分类号： H01L21/205 , H01L21/336 , H01L31/042
摘要： Methods for forming and treating a silicon containing layer in a thin film transistor structure or solar cell devices are provided. In one embodiment, a method for forming a silicon containing layer on a substrate includes providing a substrate into a processing chamber, providing a gas mixture having a silicon containing gas into the processing chamber, providing a hydrogen containing gas from a remote plasma source coupled to the processing chamber, applying a RF power less than 17.5 mWatt/cm 2 to the processing chamber, and forming a silicon containing layer on the substrate.

10. 发明申请

WO2011028349A2 REMOTE HYDROGEN PLASMA SOURCE OF SILICON CONTAINING FILM DEPOSITION 审中-公开
标题翻译：含硅薄膜沉积的远离氢等离子体源
公开(公告)号：WO2011028349A2
公开(公告)日：2011-03-10
申请号：PCT/US2010044133
申请日：2010-08-02
申请人： APPLIED MATERIALS INC , YUAN ZHENG , PANDIT MANDAR B , SCHMITT FRANCIMAR C , ZHENG YI , YANG FAN , LI LIPAN , TSO ALAN , HO DUSTIN W , CHO TOM K , THAKUR RANDHIR
发明人： YUAN ZHENG , PANDIT MANDAR B , SCHMITT FRANCIMAR C , ZHENG YI , YANG FAN , LI LIPAN , TSO ALAN , HO DUSTIN W , CHO TOM K , THAKUR RANDHIR
IPC分类号： H01L21/205 , H01L21/336 , H01L31/042
CPC分类号： H01L21/02532 , C23C16/24 , C23C16/452 , C23C16/505 , H01J37/32357 , H01J37/32449 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/076 , H01L31/1804 , H01L31/1824 , H01L31/202 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Methods for forming and treating a silicon containing layer in a thin film transistor structure or solar cell devices are provided. In one embodiment, a method for forming a silicon containing layer on a substrate includes providing a substrate into a processing chamber, providing a gas mixture having a silicon containing gas into the processing chamber, providing a hydrogen containing gas from a remote plasma source coupled to the processing chamber, applying a RF power less than 17.5 mWatt/cm2 to the processing chamber, and forming a silicon containing layer on the substrate.
摘要翻译：提供了用于在薄膜晶体管结构或太阳能电池器件中形成和处理含硅层的方法。在一个实施例中，用于在衬底上形成含硅层的方法包括将衬底提供到处理室中，将具有含硅气体的气体混合物提供到处理室中，从远程等离子体源提供含氢气体，处理室，向处理室施加小于17.5mWatt / cm 2的RF功率，以及在衬底上形成含硅层。

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