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1. 发明申请

WO2002060633A1 RESISTOR TRIMMING WITH SMALL UNIFORM SPOT FROM SOLID-STATE UV LASER 审中-公开
标题翻译：电阻器与固体紫外线激光器的小均匀点匹配
公开(公告)号：WO2002060633A1
公开(公告)日：2002-08-08
申请号：PCT/US2002/003006
申请日：2002-01-31
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC. , SWENSON, Edward, J. , HARRIS, Richard, S. , SUN, Yunlong
发明人： SWENSON, Edward, J. , HARRIS, Richard, S. , SUN, Yunlong
IPC分类号： B23K26/00
CPC分类号： H01C17/242 , B23K26/073
摘要： A uniform laser spot, such as from an imaged shaped Gaussian output (118) or a clipped Gaussian spot, that is less than 20 @m in diameter can be employed for both thin and thick film resistor trimming to substantially reduce microcracking. These spots can be generated in an ablative, nonthermal, UV laser wavelength to reduce the HAZ and/or shift in TCR.
摘要翻译：可以采用均匀的激光光斑，例如从成像高斯输出（118）或截止的高斯光点到直径小于20μm的薄膜电阻器修整，以显着减少微裂纹。这些斑点可以以烧蚀，非热的UV激光波长产生，以减少HAZ和/或TCR中的移位。

2. 发明申请

WO1998031049A1 LASER BASED METHOD AND SYSTEM FOR INTEGRATED CIRCUIT REPAIR OR RECONFIGURATION 审中-公开
标题翻译：基于激光的方法和系统，用于集成电路维修或重新配置
公开(公告)号：WO1998031049A1
公开(公告)日：1998-07-16
申请号：PCT/US1997019533
申请日：1997-10-29
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC. , SWENSON, Edward, J. , SUN, Yunlong , HARRIS, Richard, S.
发明人： ELECTRO SCIENTIFIC INDUSTRIES, INC.
IPC分类号： H01L21/768
CPC分类号： H01L21/76894
摘要： The present invention provides a method and system for irradiating resist material from multiple target positions (150) on one or more IC chips (12) with individually directed laser output pulses (74, 94). In one embodiment, an IC (12), including one or more etch targets (104, 106) such as conductive links (72, 92), is coated with an etch protection layer (90) of photoresist material. Then, position data direct, toward multiple positions (150) on the photoresist material, individual laser output pulses (94) of predetermined parameters selected to expose the photoresist material. Because photoresist exposure requires less energy than link blowing, low-power UV lasers (120) can be employed, and their shorter wavelengths permit a smaller practical laser output spot size (98). Because the nonablative process does not generate debris, an optical component (148) can be brought within 10 mm of etch protection layer (90) to focus the laser output pulses (94) to a spot size of less than two times the wavelength of laser output (140). Thus, an advantage of this embodiment permits microcircuit manufacturers to decrease the pitch distance (28) between circuit elements (14). After the photoresit layer (90) is developed, the accessible etch target (92) can be etched to repair or reconfigure the IC device. In another embodiment, slightly higher UV power laser output pulses (74) can be employed to ablate an etch protection resist layer (70) so any type of etch protection coating such as nonphotosensitive resist materials can be utilized with substantial manufacturing and cost benefits. Etching of the accessible etch targets (60, 62) follows this process.
摘要翻译：本发明提供了一种方法和系统，用于利用单独定向的激光输出脉冲（74,94）将多个目标位置（150）的抗蚀剂材料照射在一个或多个IC芯片（12）上。在一个实施例中，包括一个或多个蚀刻目标（104,106）的IC（12），例如导电连接（72,92），涂覆有光刻胶材料的蚀刻保护层（90）。然后，将位置数据直接引导到光致抗蚀剂材料上的多个位置（150），选择用于曝光光致抗蚀剂材料的预定参数的各个激光输出脉冲（94）。因为光刻胶的曝光需要比连接吹塑更少的能量，所以可以采用低功率UV激光器（120），而较短的波长允许更小的实际激光输出光斑尺寸（98）。因为非烧蚀过程不会产生碎屑，所以可将光学部件（148）置于10mm蚀刻保护层（90）内，以将激光输出脉冲（94）聚焦到小于激光波长的两倍的光斑尺寸输出（140）。因此，该实施例的优点允许微电路制造商降低电路元件（14）之间的间距（28）。在光致发光层（90）显影之后，可蚀刻可访问蚀刻靶（92）以修复或重新配置IC器件。在另一个实施例中，可以采用略高的UV功率激光输出脉冲（74）来消融蚀刻保护抗蚀剂层（70），因此可以利用任何类型的蚀刻保护涂层，例如非光敏抗蚀剂材料，具有显着的制造和成本优点。该可访问蚀刻目标（60,62）的蚀刻遵循该过程。

3. 发明申请

WO2005045521A2 LASER-BASED TERMINATION OF PASSIVE ELECTRONIC COMPONENTS 审中-公开
标题翻译：被动电子元件的基于激光器的终止
公开(公告)号：WO2005045521A2
公开(公告)日：2005-05-19
申请号：PCT/US2004036962
申请日：2004-11-04
申请人： ELECTRO SCIENT IND INC , SWENSON EDWARD J , GARCIA DOUGLAS J , GOLDWATER BRUCE STUART
发明人： SWENSON EDWARD J , GARCIA DOUGLAS J , GOLDWATER BRUCE STUART
IPC分类号： G03F20060101 , G11C5/06 , H01C17/00 , H01C17/242 , H01C17/28 , H01G4/232 , H01G4/33 , H01G13/00 , G03F
CPC分类号： H01G4/232 , H01C17/006 , H01C17/242 , H01C17/281 , H01G4/33 , H01G13/00 , H01G13/006
摘要： Terminating the ends of passive electronic components entails applying a laser-ablative coating (70) to each of the opposed major surfaces (14 and 16; 36 and 38) of a substrate (10 and 34). A UV laser beam having a spot size and an energy distribution sufficient to remove the laser-ablative coating from multiple selected regions of the major surfaces is directed for incidence on the substrate. Relative motion between the UV laser beam and substrate effects removal of sufficient amounts of laser-ablative coating to expose the multiple selected regions of the opposed major surfaces. The substrate is then broken into multiple rowbars (48 and 50), each of which includes side margins (60 and 62) along which are positioned different spatially aligned pairs of the selected regions of the opposed major surfaces. An electrically conductive material is applied to the side margins to form electrically conductive interconnects (56 and 58) between each spatially aligned pair of the selected regions.
摘要翻译：终止无源电子部件的端部需要将激光烧蚀涂层（70）施加到衬底（10和34）的每个相对主表面（14和16; 36和38）上。具有足以从主表面的多个选定区域去除激光烧蚀涂层的光斑尺寸和能量分布的UV激光束被引导到基底上。 UV激光束和衬底之间的相对运动消除了足够量的激光烧蚀涂层以暴露相对主表面的多个选定区域。然后将衬底分成多个行（48和50），每个行包括侧边缘（60和62），沿着该边缘位于相对主表面的选定区域的不同的空间对准的对上。将导电材料施加到侧边缘，以在每个空间对准的选定区域对之间形成导电互连（56和58）。

4. 发明申请

WO2005039813A2 MICROPOROUS FILTER 审中-公开
标题翻译：微波过滤器
公开(公告)号：WO2005039813A2
公开(公告)日：2005-05-06
申请号：PCT/US2004/028405
申请日：2004-08-31
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC , SWENSON, Edward, J.
发明人： SWENSON, Edward, J.
IPC分类号： B23K
CPC分类号： B01D69/02 , B01D63/087 , B01D67/0032 , B01D71/36 , B01D71/50 , B01D71/64 , B01D2323/34 , B01D2325/021 , B01D2325/08
摘要： A laser-based drilling technique provides a microporous filter (10) having very small holes (30, 30') with known diameters and locations. One embodiment of the technique entails using a laser beam (62) with one or more uniform spot sizes to form each hole. The laser beam ablates material depthwise for corresponding known distances into a substrate (12) to form a desired number of hole steps (32, 38, 44) in each hole. Another embodiment of the technique entails using an imprint patterning toolfoil (80) to stamp in the substrate depressions (32, 38) of specified diameters and distances that correspond to the hole steps. In both embodiments, a laser beam of Gaussian shape removes the last portion of material to form a very small diameter final hole step (44).
摘要翻译：基于激光的钻井技术提供具有已知直径和位置的非常小孔（30,30'）的微孔过滤器（10）。该技术的一个实施例需要使用具有一个或多个均匀斑点尺寸的激光束（62）来形成每个孔。激光束将相应的已知距离深深地切割成衬底（12）以在每个孔中形成所需数量的孔台阶（32,38,44）。该技术的另一实施例需要使用压印图案形成工具薄片（80）来压印与孔步骤相对应的指定直径和距离的基板凹部（32,38）。在两个实施例中，高斯形激光束去除最后一部分材料以形成非常小直径的最终孔步骤（44）。

5. 发明申请

WO03052890B1 PROCESSING A MEMORY LINK WITH A SET OF AT LEAST TWO LASER PULSES 审中-公开
标题翻译：处理与一组至少两个激光脉冲的存储器链接
公开(公告)号：WO03052890B1
公开(公告)日：2003-09-04
申请号：PCT/US0240410
申请日：2002-12-17
申请人： ELECTRO SCIENT IND INC , SUN YUNLONG , SWENSON EDWARD J , HARRIS RICHARD S
发明人： SUN YUNLONG , SWENSON EDWARD J , HARRIS RICHARD S
IPC分类号： B23K26/00 , B23K26/06 , B23K26/067 , B23K101/38 , G11C17/14 , H01L21/82 , H01L21/8242 , H01L23/525 , H01L27/10 , H01L27/108 , H01S3/00 , H01S3/10 , H01S3/082
CPC分类号： H01S3/0057 , B23K26/0604 , B23K26/0613 , B23K26/0622 , B23K26/0624 , B23K26/067 , G11C17/14 , G11C17/143 , H01L23/5258 , H01L2924/0002 , H01S5/4012 , H01L2924/00
摘要： A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 500 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single "pulse" by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.
摘要翻译：使用一组（50）激光脉冲（52）来切断存储器或其它IC芯片中的导电链路（22）。组（50）的持续时间优选短于500ns; 并且组（50）内的每个激光脉冲（52）的脉冲宽度优选在约0.1ps至30ns的范围内。传统的激光定位系统（62）可将组（50）视为单个“脉冲”，以便在激光系统（60）激发一组（50）激光脉冲（50） 52）。可以使用传统的IR波长或它们的谐波。

6. 发明申请

WO2007137140A2 LASER-BASED TERMINATION OF MINIATURE PASSIVE ELECTRONIC COMPONENTS 审中-公开
标题翻译：微型无源电子元件的基于激光器的终止
公开(公告)号：WO2007137140A2
公开(公告)日：2007-11-29
申请号：PCT/US2007/069184
申请日：2007-05-17
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC. , SWENSON, Edward J. , GARCIA, Douglas J. , GOLDWATER, Bruce Stuart
发明人： SWENSON, Edward J. , GARCIA, Douglas J. , GOLDWATER, Bruce Stuart
IPC分类号： G11C5/06 , H01C17/00 , H01C17/28 , H01G13/00
CPC分类号： H01C17/006 , H01C17/281 , H01G13/00
摘要： Terminating the ends of passive electronic components entails applying a laser-removable coating (70) to one or both of the opposed major surfaces (14, 16; 36, 38) of a substrate (10, 34). A UV laser beam having a spot size and an energy distribution sufficient to remove the laser-removable coating from multiple selected regions of at least one of the major surfaces to which the laser-removable coating was applied is directed for incidence on the substrate. Relative motion between the UV laser beam and substrate effects removal of sufficient amounts of laser-removable coating to expose the multiple selected regions. The substrate is then broken into multiple rowbars (48, 50, 98) or individual components (100), each of which includes side margins. An electrically conductive material is applied to the side margins to form electrically conductive interconnects (56, 58, 96) between portions of the side margins spatially aligned with the multiple selected regions.
摘要翻译：终止无源电子部件的端部需要将激光可移除涂层（70）施加到衬底（10,34）的相对主表面（14,16; 36,38）中的一个或两个上。具有足够的光斑尺寸和能量分布的UV激光束被引导到基底上以入射到激光可去除的涂层的至少一个主表面的多个选定区域中。 UV激光束和衬底之间的相对运动可以消除足够数量的激光可去除涂层以暴露多个选定区域。然后将基板分解成多个行棒（48,50,98）或各个部件（100），每个部件包括侧边缘。将导电材料施加到侧边缘，以在与多个选定区域空间对准的侧边缘的部分之间形成导电互连（56,58,96）。

7. 发明申请

WO2006127436A1 METHOD OF FORMING PASSIVE ELECTRONIC COMPONENTS ON A SUBSTRATE BY DIRECT WRITE TECHNIQUE USING SHAPED UNIFORM LASER BEAM 审中-公开
标题翻译：使用形状均匀的激光束通过直接写入技术在基板上形成被动电子元件的方法
公开(公告)号：WO2006127436A1
公开(公告)日：2006-11-30
申请号：PCT/US2006/019383
申请日：2006-05-19
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC. , SWENSON, Edward, J. , HOWE, Douglas, B. , JOHNSON, Stephen, R. , GARCIA, Douglas, J.
发明人： SWENSON, Edward, J. , HOWE, Douglas, B. , JOHNSON, Stephen, R. , GARCIA, Douglas, J.
IPC分类号： H01L21/027
CPC分类号： H01C7/18 , B23K26/40 , B23K2203/52 , H01C17/006 , H01C17/242 , H01G4/255 , H01G4/30 , H01G4/33 , H01G13/00 , H01G13/006
摘要： A method of using a laser to achieve direct patterning of resistive or electrically conductive materials (32, 40) in the fabrication of miniature electronic components (52, 54) entails aligning with a patterned array-carrying major surface (36) a laser beam (102) that has a sufficient spot size and energy distribution to remove selected portions (46, 48) of resistive or conductive material that has been applied to the substrate. The major surface carrying the resistive or conductive material and the laser beam are moved relative to each other such that the laser beam ablates, or otherwise removes, selected portions of the resistive or conductive material. Thus preferred embodiments of the method form an array of multiple, mutually spaced-apart resistive or conductive material regions whose side and end margins have improved dimensional precision.
摘要翻译：在微型电子部件（52,54）的制造中使用激光器实现电阻或导电材料（32,40）的直接图案化的方法需要与图案化的带阵列的主表面（36）对准激光束 102），其具有足够的光斑尺寸和能量分布以去除已经施加到衬底的电阻或导电材料的选定部分（46,48）。携带电阻或导电材料和激光束的主表面相对于彼此移动，使得激光束消融或以其它方式去除电阻或导电材料的选定部分。因此，该方法的优选实施例形成多个相互间隔开的电阻或导电材料区域的阵列，其侧边缘和末端边缘具有改进的尺寸精度。

8. 发明申请

WO2005008849A3 METHOD OF FORMING A SCRIBE LINE ON A PASSIVE ELECTRONIC COMPONENT SUBSTRATE 审中-公开
标题翻译：在被动电子元件基板上形成一个可选线的方法
公开(公告)号：WO2005008849A3
公开(公告)日：2006-09-28
申请号：PCT/US2004022227
申请日：2004-07-09
申请人： ELECTRO SCIENT IND INC , SWENSON EDWARD J , SUN YUNLONG , SAMMI MANOJ KUMAR , JOHNSON JAY CHRISTOPHER , GARCIA DOUG , ANKLEKAR RUPENDRA M
发明人： SWENSON EDWARD J , SUN YUNLONG , SAMMI MANOJ KUMAR , JOHNSON JAY CHRISTOPHER , GARCIA DOUG , ANKLEKAR RUPENDRA M
IPC分类号： H01L21/46 , B23K26/04 , B23K26/06 , B23K26/08 , B23K26/40 , B28D5/00 , H01L21/301 , H01L21/44 , H01L21/48 , H01L21/50 , H01L21/78 , H01S20060101
CPC分类号： B23K26/0622 , B23K26/364 , B23K26/40 , B23K2201/40 , B23K2203/52 , B28D5/0011 , H01L2224/16 , H01L2924/0102 , H01L2924/01067 , H01L2924/01068 , H01L2924/01077 , H01L2924/09701 , Y10S438/94
摘要： A method of forming a scribe line (36) having a sharp snap line (44) entails directing a UV laser beam (14) along a ceramic or ceramic-like substrate (10) such that a portion of the thickness (24) of the substrate (10) is removed. The UV laser beam forms a scribe line in the substrate in the absence of appreciable substrate melting so that a clearly defined snap line forms a region of high stress concentration extending into the thickness of the substrate. Consequently, multiple depthwise cracks propagate into the thickness of the substrate in the region of high stress concentration in response to a breakage force applied to either side of the scribe line to effect clean fracture of the substrate into separate circuit components. The formation of this region facilitates higher precision fracture of the substrate while maintaining the integrity of the interior structure of each component during and after application of the breakage force.
摘要翻译：形成具有尖锐捕捉线（44）的划痕线（36）的方法需要沿着陶瓷或陶瓷状衬底（10）引导UV激光束（14），使得一部分厚度（24）的去除衬底（10）。 UV激光束在没有明显的衬底熔化的情况下在衬底中形成划线，使得清晰限定的咬合线形成延伸到衬底厚度的高应力集中区域。因此，响应于施加到划线的任一侧的断裂力，多个深度裂纹在高应力集中区域中传播到基板的厚度中，以使基板清洁断裂成单独的电路部件。该区域的形成促进了基板的高精度断裂，同时在施加破损力的同时保持了每个部件的内部结构的完整性。

9. 发明申请

WO2004034764A1 METHOD OF FORMING DIMENSIONALLY PRECISE SLOTS IN RESILIENT MASK OF MINIATURE COMPONENT CARRIER 审中-公开
标题翻译：在微型组件载体的弹性掩模中形成尺寸精度的方法
公开(公告)号：WO2004034764A1
公开(公告)日：2004-04-22
申请号：PCT/US2003/031399
申请日：2003-10-03
申请人： ELECTRO SCIENTIFIC INDUSTRIES, INC. , SWENSON, Edward, J. , STACKPOLE, John, D. , SUN, Yunlong , SAMMI, Manoj
发明人： SWENSON, Edward, J. , STACKPOLE, John, D. , SUN, Yunlong , SAMMI, Manoj
IPC分类号： H05K13/00
CPC分类号： H05K13/0084 , B23K26/0006 , B23K26/18 , B23K26/361 , B23K26/384 , B23K2203/50
摘要： A laser beam (102) cuts through a component carrier mask (96) made of thin elastomeric material such as silicone rubber to form slots (98) having slot openings of a desired shape. In a preferred embodiment, a light absorptivity enhancement material such as iron oxide introduced into the silicone rubber causes formation of a flexible support blank that operationally adequately absorbs light within a light absorption wavelength range. A beam positioner (106) receiving commands from a programmed controller causes a UV laser beam of a wavelength that is within the light absorption wavelength range to cut into the mask multiple slots with repeatable, precise dimensions. Each of the slots cut has opposed side margins that define between them a slot opening of suitable shape to receive a miniature component (10) and to exert on it optimal holding and release forces.
摘要翻译：激光束（102）切穿由诸如硅橡胶的薄弹性体材料制成的部件载体掩模（96），以形成具有所需形状的槽口的槽（98）。在优选的实施方案中，引入到硅橡胶中的诸如氧化铁的光吸收增强材料引起形成柔性支撑坯料，其可操作地充分吸收光吸收波长范围内的光。从编程的控制器接收命令的光束定位器（106）使得在光吸收波长范围内的波长的UV激光束可以重复精确的尺寸切割成多个槽。切割的每个切口具有相对的侧边缘，其在它们之间限定适当形状的狭槽开口，以接收微型部件（10）并且施加最佳的保持和释放力。

10. 发明申请

WO0151243A2 LASER SYSTEM AND METHOD FOR PROCESSING A MEMORY LINK WITH A BURST OF LASER PULSES HAVING ULTRASHORT PULSEWIDTHS 审中-公开
标题翻译：具有超短脉冲激光脉冲处理存储器链路的激光系统和方法
公开(公告)号：WO0151243A2
公开(公告)日：2001-07-19
申请号：PCT/US0100711
申请日：2001-01-09
申请人： ELECTRO SCIENT IND INC , SUN YUNLONG , SWENSON EDWARD J , HARRIS RICHARD S
发明人： SUN YUNLONG , SWENSON EDWARD J , HARRIS RICHARD S
IPC分类号： B23K26/00 , B23K26/04 , B23K26/06 , B23K26/40 , B23K101/42 , G03F7/20 , H01L21/768 , H01L21/82 , H01L23/525 , H01L27/10 , H05K3/00 , H05K3/22
CPC分类号： H01L23/5258 , B23K26/04 , B23K26/0622 , B23K26/0624 , G03F7/70041 , G03F7/70725 , H01L21/76894 , H01L2924/0002 , H01L2924/00
摘要： A burst of ultrashort laser pulses is employed to sever a conductive link (22) in a nonthermal manner and offers a wider processing window, eliminates undesirable HAZ effects, and achieves superior severed link quality. The duration of the burst is preferably in the range of 10 ns to 500 ns; and the pulse width of each laser pulse within the burst is generally shorter than 25 ps, preferablyshorter than or equal to 10 ps, and most preferably about 10 ps to 100 fs or shorter. The burst can be treated as a single "pulse" by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a burst of laser pulses at each link (22). Conventional wavelengths or their harmonics can be employed.
摘要翻译：采用一阵超短激光脉冲以非热方式切断导电链路（22），并提供更宽的处理窗口，消除不希望的热影响区效应，并实现卓越的切断链路质量。突发的持续时间优选在10ns至500ns的范围内; 并且脉冲内的每个激光脉冲的脉冲宽度通常小于25ps，优选小于或等于10ps，并且最优选大约10ps至100fs或更短。通过传统的激光定位系统（62），突发可被视为单个“脉冲”，以在激光系统（60）在每个链路（22）处发射激光脉冲时不停止地执行即时链路移除。可以采用常规波长或它们的谐波。

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