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1. 发明申请

WO2013128480A9 VERTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS OF THE SAME 审中-公开
公开(公告)号：WO2013128480A9
公开(公告)日：2013-09-06
申请号：PCT/IT2012/000060
申请日：2012-02-28
申请人： STMICROELECTRONICS S.R.L. , MURABITO Domenico , SAGGIO Mario Giuseppe
发明人： MURABITO Domenico , SAGGIO Mario Giuseppe
IPC分类号： H01L29/78 , H01L29/739 , H01L29/08 , H01L21/02 , H01L21/336
摘要： A vertical-conduction electronic device (100; 150), comprising: a semiconductor wafer (1) including a semiconductor layer (2, 3) having a first side (3a), a first type of conductivity (N), and a first doping level; a first body region (32) and a second body region (34), which have a second type of conductivity (P) and extend in the semiconductor layer (2, 3); an enriched region (12), having the first type of conductivity and a second doping " level higher than the first doping level, which extends in the semiconductor layer facing the first side (3a), between the first and second body regions (32, 34); a dielectric filling region (20), which extends in the semiconductor layer, facing the first side (3a), and completely surrounded by the enriched region (12); and a gate structure (29), which extends on the first side (3a) on the enriched region (12), on the dielectric filling region (20), on part of the first body region (32), and on part of the second body region (34).

2. 发明申请

WO2013128480A1 VERTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING PROCESS OF THE SAME 审中-公开
标题翻译：垂直半导体器件及其制造工艺
公开(公告)号：WO2013128480A1
公开(公告)日：2013-09-06
申请号：PCT/IT2012/000060
申请日：2012-02-28
申请人： STMICROELECTRONICS S.R.L. , MURABITO Domenico , SAGGIO Mario Giuseppe
发明人： MURABITO Domenico , SAGGIO Mario Giuseppe
IPC分类号： H01L29/78 , H01L29/739 , H01L29/08 , H01L21/02 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0653 , H01L29/0696 , H01L29/0878 , H01L29/42368 , H01L29/66712 , H01L29/7395
摘要： A vertical-conduction electronic device (100; 150), comprising: a semiconductor wafer (1) including a semiconductor layer (2, 3) having a first side (3a), a first type of conductivity (N), and a first doping level; a first body region (32) and a second body region (34), which have a second type of conductivity (P) and extend in the semiconductor layer (2, 3); an enriched region (12), having the first type of conductivity and a second doping " level higher than the first doping level, which extends in the semiconductor layer facing the first side (3a), between the first and second body regions (32, 34); a dielectric filling region (20), which extends in the semiconductor layer, facing the first side (3a), and completely surrounded by the enriched region (12); and a gate structure (29), which extends on the first side (3a) on the enriched region (12), on the dielectric filling region (20), on part of the first body region (32), and on part of the second body region (34).
摘要翻译：一种垂直导电电子器件（100; 150），包括：半导体晶片（1），包括具有第一侧（3a），第一导电类型（N）和第一掺杂的半导体层（2,3）水平; 具有第二导电类型（P）并在半导体层（2,3）中延伸的第一体区（32）和第二体区（34）; 在所述第一和第二体区域（32,32）之间具有第一类型的导电性和比第一掺杂级别高的第二掺杂的富集区域（12），其在面向第一侧面（3a）的半导体层中延伸，电介质填充区域（20），其在所述半导体层中延伸，面向所述第一侧面（3a），并且被所述富集区域（12）完全包围;以及栅极结构（29），其在第一在富集区域（12）上的介电填充区域（20）上，第一体区域（32）的一部分上以及第二体区域（34）的一部分上的侧面（3a）。

3. 发明申请

WO2012020290A3 PROCESS FOR FILLING DEEP TRENCHES IN A SEMICONDUCTOR MATERIAL BODY, AND SEMICONDUCTOR DEVICE RESULTING FROM THE SAME PROCESS 审中-公开
公开(公告)号：WO2012020290A3
公开(公告)日：2012-02-16
申请号：PCT/IB2011/001724
申请日：2011-07-26
申请人： STMICROELECTRONICS S.R.L. , SAGGIO, Mario, Giuseppe , MURABITO, Domenico , FIORE, Letterio , MORALE, Giuseppe , ARENA, Giuseppe
发明人： SAGGIO, Mario, Giuseppe , MURABITO, Domenico , FIORE, Letterio , MORALE, Giuseppe , ARENA, Giuseppe
IPC分类号： H01L21/20 , H01L29/739 , H01L29/78 , H01L29/06 , H01L29/66
摘要： A process for manufacturing a semiconductor device (10; 10') envisages the steps of: providing a semiconductor material body (2) having at least one deep trench (4) that extends through said body of semiconductor material starting from a top surface (2a) thereof; and filling the deep trench (4) via an epitaxial growth of semiconductor material, thereby forming a columnar structure (8) within the body of semiconductor material (2). The manufacturing process further envisages the step of modulating the epitaxial growth by means of a concurrent chemical etching of the semiconductor material that is undergoing epitaxial growth so as to obtain a compact filling free from voids of the deep trench (4); in particular, a flow of etching gas is introduced into the same reaction environment as that of the epitaxial growth, wherein a flow of source gas is supplied for the same epitaxial growth.

4. 发明申请

WO2007006506A1 POWER FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：功率场效应晶体管及其制造方法
公开(公告)号：WO2007006506A1
公开(公告)日：2007-01-18
申请号：PCT/EP2006/006674
申请日：2006-07-07
申请人： STMICROELECTRONICS S.R.L. , SAGGIO, Mario, Giuseppe , FRISINA, Ferruccio
发明人： SAGGIO, Mario, Giuseppe , FRISINA, Ferruccio
IPC分类号： H01L21/04 , H01L29/78 , H01L29/24 , H01L29/423 , H01L21/265
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/1095 , H01L29/1608 , H01L29/42368 , H01L29/66068
摘要： Method for manufacturing a vertical power MOS transistor on a wide band gap semiconductor substrate (10) comprising a superficial semiconductor layer (11), the method comprising the steps of: forming a screening structure (12) on the superficial semiconductor layer (11) comprising at least one dielectric layer (12) carrying out at least a first ion implantation of a first type of dopant for forming at least one deep implanted region (14a); carrying out at least a second ion implantation of the first type of dopant for forming at least one body region (16) of the MOS transistor aligned with the deep implanted region (14a); the method comprising an activation thermal process with 1-14 low thermal budget of the first type and second type of dopant suitable to complete said formation of the body region (16), and of the deep implanted region (14a).
摘要翻译：在宽带隙半导体衬底（10）上制造垂直功率MOS晶体管的方法，包括表面半导体层（11），所述方法包括以下步骤：在所述表面半导体层（11）上形成屏蔽结构（12），包括：至少一个电介质层（12）至少执行用于形成至少一个深注入区域（14a）的第一类型掺杂剂的第一离子注入; 执行所述第一类型掺杂剂的至少第二离子注入以形成与所述深注入区域（14a）对准的所述MOS晶体管的至少一个体区（16）。该方法包括具有适合于完成所述体区（16）的所述第一类型和第二类型掺杂物的1-14低热预算的激活热处理以及所述深注入区域（14a）。

5. 发明申请

WO2012020290A2 PROCESS FOR FILLING DEEP TRENCHES IN A SEMICONDUCTOR MATERIAL BODY, AND SEMICONDUCTOR DEVICE RESULTING FROM THE SAME PROCESS 审中-公开
标题翻译：在半导体材料体中填充深度沉积物的方法以及从相同工艺得到的半导体器件
公开(公告)号：WO2012020290A2
公开(公告)日：2012-02-16
申请号：PCT/IB2011001724
申请日：2011-07-26
申请人： ST MICROELECTRONICS SRL , SAGGIO MARIO GIUSEPPE , MURABITO DOMENICO , FIORE LETTERIO , MORALE GIUSEPPE , ARENA GIUSEPPE
发明人： SAGGIO MARIO GIUSEPPE , MURABITO DOMENICO , FIORE LETTERIO , MORALE GIUSEPPE , ARENA GIUSEPPE
CPC分类号： H01L21/762 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/3247 , H01L29/0634 , H01L29/0638 , H01L29/1095 , H01L29/42376 , H01L29/66348 , H01L29/66712 , H01L29/7397 , H01L29/7802 , H01L29/7811 , H01L29/7813
摘要： A process for manufacturing a semiconductor device (10; 10') envisages the steps of: providing a semiconductor material body (2) having at least one deep trench (4) that extends through said body of semiconductor material starting from a top surface (2a) thereof; and filling the deep trench (4) via an epitaxial growth of semiconductor material, thereby forming a columnar structure (8) within the body of semiconductor material (2). The manufacturing process further envisages the step of modulating the epitaxial growth by means of a concurrent chemical etching of the semiconductor material that is undergoing epitaxial growth so as to obtain a compact filling free from voids of the deep trench (4); in particular, a flow of etching gas is introduced into the same reaction environment as that of the epitaxial growth, wherein a flow of source gas is supplied for the same epitaxial growth.
摘要翻译：一种用于制造半导体器件（10; 10'）的方法，设想的步骤是：提供半导体材料体（2），该半导体材料体（2）具有从顶表面（2a）开始延伸穿过半导体材料体的至少一个深沟槽（4））; 以及通过半导体材料的外延生长填充深沟槽（4），从而在半导体材料（2）的主体内形成柱状结构（8）。制造工艺进一步设想通过正在进行外延生长的半导体材料的同时化学蚀刻来调制外延生长的步骤，从而获得没有深沟槽（4）的空隙的紧密填充物。特别地，将蚀刻气体流引入到与外延生长相同的反应环境中，其中为相同的外延生长提供源气体的流动。

6. 发明申请

WO2007006505A1 SEMICONDUCTOR POWER DEVICE WITH MULTIPLE DRAIN STRUCTURE AND CORRESPONDING MANUFACTURING PROCESS 审中-公开
标题翻译：具有多个排水结构和相应制造工艺的半导体功率器件
公开(公告)号：WO2007006505A1
公开(公告)日：2007-01-18
申请号：PCT/EP2006/006673
申请日：2006-07-07
申请人： STMICROELECTRONICS S.R.L. , SAGGIO, Mario, Giuseppe , FRISINA, Ferruccio , RASCUNA, Simone
发明人： SAGGIO, Mario, Giuseppe , FRISINA, Ferruccio , RASCUNA, Simone
IPC分类号： H01L21/336 , H01L29/78 , H01L29/08 , H01L29/10
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/66712
摘要： Process for manufacturing a multi-drain power electronic device (30) integrated on a semiconductor substrate (100) of a first type of conductivity whereon a drain semiconductor layer (20) is formed, characterised in that it comprises the following steps: forming at least a first semiconductor epitaxial layer (21) of the first type of conductivity forming the drain epitaxial layer (20) on the semiconductor substrate (100) , forming first sub-regions (51) of a second type of conductivity by means of a first selective implant step forming second sub-regions (Dl, DIa) of the first type of conductivity by means of a second implant step forming a surface semiconductor layer (23) wherein body regions (40) of the second type of conductivity are formed being aligned with the first sub-regions (51) , carrying out a thermal diffusion process so that the first sub-regions (51) form a single electrically continuous column region (50) being aligned and in electric contact with the body regions (40).
摘要翻译：一种集成在形成有漏极半导体层（20）的第一导电类型的半导体衬底（100）上的多漏极功率电子器件（30）的制造方法，其特征在于包括以下步骤：至少形成在所述半导体衬底（100）上形成所述漏极外延层（20）的所述第一导电类型的第一半导体外延层（21），通过第一选择性形成第二导电类型的第一子区域（51）植入步骤通过形成表面半导体层（23）的第二注入步骤形成第一类型导电性的第二子区域（D1，DIa），其中形成第二导电类型的主体区域（40）与所述第一子区域（51）进行热扩散处理，使得所述第一子区域（51）形成与所述主体区域（40）电接触的单个电连续列区域（50）。

7. 发明申请

WO2007122646A1 PROCESS FOR MANUFACTURING A POWER SEMICONDUCTOR DEVICE AND CORRESPONDING POWER SEMICONDUCTOR DEVICE 审中-公开
标题翻译：功率半导体器件和相应的功率半导体器件的制造方法
公开(公告)号：WO2007122646A1
公开(公告)日：2007-11-01
申请号：PCT/IT2006/000273
申请日：2006-04-21
申请人： STMICROELECTRONICS S.R.L. , GUARNERA, Alfio , SAGGIO, Mario, Giuseppe , FRISINA, Ferruccio
发明人： GUARNERA, Alfio , SAGGIO, Mario, Giuseppe , FRISINA, Ferruccio
IPC分类号： H01L29/06 , H01L29/78 , H01L21/336 , H01L29/417 , H01L29/08 , H01L21/20 , H01L21/324 , H01L29/10 , H01L29/739 , H01L29/861 , H01L29/872
CPC分类号： H01L29/0634 , H01L21/2003 , H01L21/324 , H01L29/0847 , H01L29/1095 , H01L29/41766 , H01L29/66727 , H01L29/66734 , H01L29/7396 , H01L29/7397 , H01L29/7802 , H01L29/7813 , H01L29/8611 , H01L29/872
摘要： A process for manufacturing a power semiconductor device (25; 35) envisages the steps of: providing a body of semiconductor material (3) having a top surface (4) and having a first conductivity; forming columnar regions (6) having a second type of conductivity within the body of semiconductor material (3), and surface extensions (10) of the columnar regions (6) above the top surface (4); and forming doped regions (19, 20) having the second type of conductivity, in the proximity of the top surface (4) and in contact with the columnar regions (6). The doped regions (19, 20) are formed at least partially within the surface extensions (10) of the columnar regions (6); the surface extensions (10) and the doped regions (20) have a non-planar surface pattern, in particular with a substantially V-shaped groove.
摘要翻译：一种用于制造功率半导体器件（25; 35）的工艺设想了以下步骤：提供具有顶表面（4）并具有第一导电性的半导体材料体（3）; 在所述半导体材料（3）的主体内形成具有第二导电类型的柱状区域（6）以及所述顶表面（4）上方的所述柱状区域（6）的表面延伸部（10）。以及在所述顶表面（4）附近形成具有所述第二导电类型的掺杂区域（19,20）并与所述柱状区域（6）接触。掺杂区域（19,20）至少部分地形成在柱状区域（6）的表面延伸部分（10）内; 表面延伸部（10）和掺杂区域（20）具有非平面的表面图案，特别是具有大致V形的凹槽。

8. 发明申请

WO2007006504A2 METHOD FOR MANUFACTURING ELECTRONIC DEVICES INTEGRATED IN A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING DEVICES 审中-公开
标题翻译：用于制造集成在半导体衬底和相应器件中的电子器件的方法
公开(公告)号：WO2007006504A2
公开(公告)日：2007-01-18
申请号：PCT/EP2006006672
申请日：2006-07-07
申请人： ST MICROELECTRONICS SRL , FRISINA FERRUCCIO , SAGGIO MARIO GIUSEPPE , MAGRI ANGELO
发明人： FRISINA FERRUCCIO , SAGGIO MARIO GIUSEPPE , MAGRI ANGELO
IPC分类号： H01L29/78 , H01L21/336 , H01L29/10 , H01L29/423
CPC分类号： H01L29/1095 , H01L21/046 , H01L21/047 , H01L29/1045 , H01L29/1608 , H01L29/42368 , H01L29/66068 , H01L29/6653 , H01L29/7802 , H01L29/7835
摘要： Method for manufacturing electronic devices on a semiconductor substrate (1, 1a; 10, 11) with wide band gap comprising the steps of: forming a screening structure (3a, 20) on said semiconductor substrate (1, 1a; 10, 11) comprising at least a dielectric layer (2, 20) which leaves a plurality of areas of said semiconductor substrate (1, 1a; 10, 11) exposed, carrying out at least a ion implantation of a first type of dopant in said semiconductor substrate (1, 1a; 10, 11) to form at least a first implanted region (4, 40), carrying out at least a ion implantation of a second type of dopant in said semiconductor substrate (1, 1a; 10, 11) to form at least a second implanted region (6, 6c; 60, 61) inside said at least a first implanted region (4, 40), carrying out an activation thermal process of the first type and second type of dopant with low thermal budget suitable to complete said formation of said at least first and second implanted regions (4, 40; 6, 60).
摘要翻译：在具有宽带隙的半导体衬底（1,1a; 10,11）上制造电子器件的方法包括以下步骤：在所述半导体衬底（1,1a; 10,11）上形成屏蔽结构（3a，20），包括：至少一个留下所述半导体衬底（1,1a; 10,11）的多个区域的介电层（2,20），所述多个区域暴露在所述半导体衬底（1）中至少进行第一类型的掺杂剂的离子注入，1a; 10,11）以形成至少第一注入区域（40,40），在所述半导体衬底（1,1a; 10,11）中至少执行第二类型的掺杂剂的离子注入以形成在所述至少第一注入区域（4,40）内部的至少一个第二注入区域（6,6c; 60,61）中，执行所述第一类型和第二类型的掺杂剂的激活热过程，其具有适合于完成所述至少第一和第二植入区域（4,40; 6,60）的形成。

9. 发明申请

WO2006089725A3 CHARGE COMPENSATION SEMICONDUCTOR DEVICE AND RELATIVE MANUFACTURING PROCESS 审中-公开
公开(公告)号：WO2006089725A3
公开(公告)日：2006-08-31
申请号：PCT/EP2006/001591
申请日：2006-02-22
申请人： STMICROELECTRONICS S.R.L. , SAGGIO, Mario, Giuseppe , FRISINA, Ferruccio
发明人： SAGGIO, Mario, Giuseppe , FRISINA, Ferruccio
IPC分类号： H01L29/78
摘要： Power semiconductor device (30) integrated on a semiconductor substrate (100) of a first type of conductivity comprising a plurality of elemental units, each elemental unit comprising a body region (40) of a second type of conductivity realised on a semiconductor layer (20) of the first type of conductivity formed on the semiconductor substrate (100), and a column region (50) of the first type of conductivity realised in said semiconductor layer (20) below the body region (40), wherein the semiconductor layer (20) comprises a plurality of semiconductor layers (21, 22, 23, 24), overlying each other, the resistivity of each layer being different from that of the other layers, and wherein said column region (50) comprises a plurality of doped sub-regions (51, 52, 53, 54), each realised in one of said semiconductor layers (21, 22, 23, 24), wherein the amount of charge of each doped sub-regions (51, 52, 53, 54) balances the amount of charge of the semiconductor layer (21, 22, 23, 24).

10. 发明申请

WO2007116420A1 PROCESS FOR MANUFACTURING A SEMICONDUCTOR POWER DEVICE AND RESPECTIVE DEVICE 审中-公开
标题翻译：制造半导体功率器件和相关器件的方法
公开(公告)号：WO2007116420A1
公开(公告)日：2007-10-18
申请号：PCT/IT2006/000244
申请日：2006-04-11
申请人： STMICROELECTRONICS S.R.L. , LORENTI, Simona , CAMALLERI, Cateno Marco , SAGGIO, Mario, Giuseppe , FRISINA, Ferruccio
发明人： LORENTI, Simona , CAMALLERI, Cateno Marco , SAGGIO, Mario, Giuseppe , FRISINA, Ferruccio
IPC分类号： H01L29/06 , H01L29/78 , H01L21/336 , H01L21/20 , H01L21/205 , H01L21/324 , H01L21/3065 , H01L21/306 , H01L29/10 , H01L29/739 , H01L29/732
CPC分类号： H01L21/3247 , H01L21/02057 , H01L21/02381 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/3065 , H01L21/324 , H01L27/088 , H01L29/045 , H01L29/0634 , H01L29/1095 , H01L29/66333 , H01L29/66712 , H01L29/73 , H01L29/7395 , H01L29/7802 , H01L29/8611 , H01L29/872
摘要： Process for manufacturing a semiconductor power device, wherein a trench (8) is formed in a semiconductor body (2) having a first conductivity type; the trench is annealed for shaping purpose (8a) ; and the trench (8a) is filled with semiconductor material via epitaxial growth so as to obtain a first column (9) having a second conductivity type. The epitaxial growth is performed by supplying a gas containing silicon and a gas containing dopant ions of the second conductivity type in presence of a halogenide gas and occurs with uniform distribution of the dopant ions. The flow of the gas containing dopant ions is varied according to a linear ramp during the epitaxial growth; in particular, in the case of selective growth of the semiconductor material in the presence of a hard mask, the flow decreases; in the case of non-selective growth, in the absence of hard mask, the flow increases .
摘要翻译：一种制造半导体功率器件的方法，其中在具有第一导电类型的半导体本体（2）中形成沟槽（8）沟槽退火成型目的（8a）; 并且沟槽（8a）通过外延生长填充半导体材料，从而获得具有第二导电类型的第一列（9）。外延生长通过在卤化物气体的存在下供给包含硅和含有第二导电类型的掺杂剂离子的气体进行，并且以掺杂剂离子的均匀分布发生。含气体掺杂剂离子的流动在外延生长期间根据线性斜坡而变化; 特别是在硬掩模存在下选择性地生长半导体材料的情况下，流量减少; 在非选择性生长的情况下，在没有硬掩模的情况下，流动增加。

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