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1. 发明申请

WO2012020290A3 PROCESS FOR FILLING DEEP TRENCHES IN A SEMICONDUCTOR MATERIAL BODY, AND SEMICONDUCTOR DEVICE RESULTING FROM THE SAME PROCESS 审中-公开
公开(公告)号：WO2012020290A3
公开(公告)日：2012-02-16
申请号：PCT/IB2011/001724
申请日：2011-07-26
申请人： STMICROELECTRONICS S.R.L. , SAGGIO, Mario, Giuseppe , MURABITO, Domenico , FIORE, Letterio , MORALE, Giuseppe , ARENA, Giuseppe
发明人： SAGGIO, Mario, Giuseppe , MURABITO, Domenico , FIORE, Letterio , MORALE, Giuseppe , ARENA, Giuseppe
IPC分类号： H01L21/20 , H01L29/739 , H01L29/78 , H01L29/06 , H01L29/66
摘要： A process for manufacturing a semiconductor device (10; 10') envisages the steps of: providing a semiconductor material body (2) having at least one deep trench (4) that extends through said body of semiconductor material starting from a top surface (2a) thereof; and filling the deep trench (4) via an epitaxial growth of semiconductor material, thereby forming a columnar structure (8) within the body of semiconductor material (2). The manufacturing process further envisages the step of modulating the epitaxial growth by means of a concurrent chemical etching of the semiconductor material that is undergoing epitaxial growth so as to obtain a compact filling free from voids of the deep trench (4); in particular, a flow of etching gas is introduced into the same reaction environment as that of the epitaxial growth, wherein a flow of source gas is supplied for the same epitaxial growth.

2. 发明申请

WO2007006764A2 PROCESS FOR MANUFACTURING A SEMICONDUCTOR POWER DEVICE WITH INSULATED GATE FORMED IN A TRENCH 审中-公开
标题翻译：用于在TRENCH中形成的具有绝缘栅的半导体电源装置的制造方法
公开(公告)号：WO2007006764A2
公开(公告)日：2007-01-18
申请号：PCT/EP2006/064035
申请日：2006-07-07
申请人： STMICROELECTRONICS S.r.l. , ARENA, Giuseppe , DONATO, Caterina , CAMALLERI, Cateno Marco , MAGRI', Angelo
发明人： ARENA, Giuseppe , DONATO, Caterina , CAMALLERI, Cateno Marco , MAGRI', Angelo
IPC分类号： H01L21/336 , H01L29/78 , H01L29/423 , H01L29/51
CPC分类号： H01L29/7813 , H01L29/0623 , H01L29/0878 , H01L29/42368 , H01L29/4933 , H01L29/511 , H01L29/66734
摘要： A trench (5) is formed in a semiconductor body (2); the side walls and the bottom of the trench are covered with a first dielectric material layer (9); the trench (5) is filled with a second dielectric material layer (10); the first and the second dielectric material layers (9, 10) are etched via a partial, simultaneous and controlled etching such that the dielectric materials have similar etching rates; a gate-oxide layer (13) having a thickness smaller than the first dielectric material layer (9) is deposited on the walls of the trench (5); a gate region (14) of conductive material is formed within the trench (5); and body regions (7) and source regions (8) are formed within the semiconductor body (2), at the sides of and insulated from the gate region (14). Thereby, the gate region (14) extends only on top of the remaining portions of the first and second dielectric material layers (9, 10).
摘要翻译：沟槽（5）形成在半导体本体（2）中; 沟槽的侧壁和底部被第一介电材料层（9）覆盖; 沟槽（5）填充有第二电介质层（10）; 通过部分，同时和受控的蚀刻蚀刻第一和第二介电材料层（9,10），使得介电材料具有相似的蚀刻速率; 在沟槽（5）的壁上沉积具有小于第一介电材料层（9）的厚度的栅极 - 氧化物层（13）。在沟槽（5）内形成导电材料的栅区（14）; 并且在半导体本体（2）中，在栅极区域（14）的侧面和与栅极区域（14）绝缘的位置上形成有主体区域（7）和源极区域（8）。因此，栅极区域（14）仅在第一和第二介电材料层（9,10）的剩余部分的顶部延伸。

3. 发明申请

WO2007007356A1 SUCTION, FILTERING AND DEODORIZING DEVICE AND SYSTEM OF GASEOUS EFFLUENTS 审中-公开
标题翻译：吸收，过滤和除臭装置和气体排放系统
公开(公告)号：WO2007007356A1
公开(公告)日：2007-01-18
申请号：PCT/IT2005/000400
申请日：2005-07-14
申请人： ARENA, Giuseppe
发明人： ARENA, Giuseppe
IPC分类号： F23J15/04 , B01D53/14 , B01D53/32
CPC分类号： F23J15/04 , B01D53/1425 , B01D53/32 , F23J2217/102
摘要： Device and system for suction, filtering and deodoration of gaseous effluents constituted by two or more than two protecting boxes (7, 8, 9) linked with junctions (11, 12) in which an ionization chamber 32, filtering chambers (34, 36) filled with filtering material (35), refrigerated washing water sprays (13), washing water gathering ducts (25, 26, 27) are placed; by a discharge duct of purified air (45) characterized by the fact that said device is constituted, besides, by an ozonizator (31) for the refrigerated washing water ozonization, which at the beginning of the filtering chambers (34, 36) is provided with a drops separator (37), by a filter impregnated with adhesivant and not drying substances (39), by an electrostatic filter (40), by a filter for ozone (41), by a sensor for ozone (42).
摘要翻译：由两个或多于两个与结（11,12）连接的保护盒（7,8,9）构成的气体流出物的抽吸，过滤和除臭装置和系统，其中电离室32，过滤室（34,36）填充有过滤材料（35），冷藏洗涤水喷雾（13），洗涤水收集管道（25,26,27）; 通过净化空气的排放管道（45），其特征在于，除了设置在过滤室（34,36）的开始处的用于冷藏洗涤水臭氧化的臭氧化物（31）外，还构成所述装置通过用于臭氧（41）的过滤器，通过静电过滤器（40）浸渍有粘附剂和不干燥物质（39）的过滤器，通过臭氧传感器（42）进行滴液分离器（37）。

4. 发明申请

WO2002068874A1 SUCTION SYSTEM 审中-公开
标题翻译：吸引系统
公开(公告)号：WO2002068874A1
公开(公告)日：2002-09-06
申请号：PCT/IT2002/000118
申请日：2002-02-27
申请人： ARENA, Giuseppe
发明人： ARENA, Giuseppe
IPC分类号： F24B1/187
CPC分类号： F23J15/04 , F23J15/025 , F23J2217/102 , F23L17/005 , F24B1/187
摘要： A suction system is apt to be associated to a fireplace to allow eliminating smokes without flue and it comprises: a device of forced ventilation (3) to extract the smoke from a combustion chamber of the fireplace; a plurality of filter units (8, 10, 12) wherein the devices necessary to cool and purify the extracted smokes are contained comprising: a plurality of sprayers (24) fed with washing liquid; a ionization chamber (26); filtering chambers (27, 29, 30, 31, 32, 33), filled-up with filtering material (28); refrigerating means (53) for the washing liquid to keep the washing temperature below a certain level, so that the whole temperature of the system 1 remains cntained, as well as the temperature of the smokes expelled from the system (1).
摘要翻译：抽吸系统易于与壁炉相关联，以便消除没有烟道的烟雾，并且其包括：强制通风装置（3）从壁炉的燃烧室抽取烟雾; 多个过滤器单元（8,10,12），其中包含冷却和净化抽取的烟雾所必需的装置，包括：多个喷射器（24），其被供给洗涤液体; 电离室（26）; 过滤室（27,29,30,31,32,33），填充有过滤材料（28）; 用于洗涤液体的冷冻装置（53），以将洗涤温度保持在一定水平以下，使得系统1的整个温度保持固定，以及从系统（1）排出的烟雾的温度。

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