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    • 9. 发明申请
    • ISOLATED TRI-GATE TRANSISTOR FABRICATED ON BULK SUBSTRATE
    • 隔离三极晶体管在大块基板上制作
    • WO2009012053A2
    • 2009-01-22
    • PCT/US2008/068855
    • 2008-06-30
    • INTEL CORPORATIONRIOS, RafaelKAVALIEROS, Jack T.CEA, Stephen M.
    • RIOS, RafaelKAVALIEROS, Jack T.CEA, Stephen M.
    • H01L21/336
    • H01L29/66795H01L29/785
    • A method of forming an isolated tri-gate semiconductor body comprises patterning a bulk substrate to form a fin structure, depositing an insulating material around the fin structure, recessing the insulating material to expose a portion of the fin structure that will be used for the tri-gate semiconductor body, depositing a nitride cap over the exposed portion of the fin structure to protect the exposed portion of the fin structure, and carrying out a thermal oxidation process to oxidize an unprotected portion of the fin structure below the nitride cap. The oxidized portion of the fin isolates the semiconductor body that is being protected by the nitride cap. The nitride cap may then be removed. The thermal oxidation process may comprise annealing the substrate at a temperature between around 900°C and around 1100°C for a time duration between around 0.5 hours and around 3 hours.
    • 形成隔离的三栅极半导体器件的方法包括:图案化块状衬底以形成翅片结构,在鳍结构周围沉积绝缘材料,使绝缘材料凹陷以暴露将用于三极管的鳍结构的一部分 - 半导体本体,在所述鳍结构的暴露部分上沉积氮化物帽以保护所述鳍结构的暴露部分,以及执行热氧化工艺以将所述鳍状结构的未受保护的部分氧化在所述氮化物帽下方。 翅片的氧化部分隔离被氮化物盖保护的半导体主体。 然后可以去除氮化物盖。 热氧化过程可以包括在大约900℃和大约1100℃之间的温度下退火约0.5小时至约3小时之间的时间。