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1. 发明申请

WO2011005013A3 SOLAR CELL USING P-I-N NANOWIRES 审中-公开
标题翻译：太阳能电池使用P-I-N纳米
公开(公告)号：WO2011005013A3
公开(公告)日：2011-04-14
申请号：PCT/KR2010004395
申请日：2010-07-06
申请人： IUCF HYU , KIM TAE-WHAN , YOU JOO-HYUNG , JUNG JAE-HUN , YI JAE-SEOK , PARK WON-IL
发明人： KIM TAE-WHAN , YOU JOO-HYUNG , JUNG JAE-HUN , YI JAE-SEOK , PARK WON-IL
IPC分类号： H01L31/042
CPC分类号： H01L31/03529 , H01L31/035281 , Y02E10/50
摘要： The present invention relates to a solar cell using p-i-n nanowires, which efficiently absorbs solar light of within a wide range of wavelengths without a loss of light and generates photovoltaic power, and which involves a simple process and has low process costs. The solar cell using p-i-n nanowires according to the present invention comprises a semiconductor layer and a photovoltaic layer. The photovoltaic layer includes a semiconductor structure constituted by a core-nanowire which extends upwardly from the semiconductor layer and which consists of an intrinsic semiconductor material, and a shell-nanowire which covers the outside of the core-nanowire and which consists of a semiconductor material. The semiconductor material which forms the semiconductor layer is an n-type and the semiconductor material which forms the cell-nanowire is a p-type. Alternatively, the semiconductor material which forms the semiconductor layer is a p-type and the semiconductor material which forms the cell-nanowire is an n-type.
摘要翻译：本发明涉及一种使用p-i-n纳米线的太阳能电池，其在不损失光线的情况下有效地吸收宽波长范围内的太阳光并且产生光伏电力，并且其涉及简单的工艺并且具有低的工艺成本。使用根据本发明的p-i-n纳米线的太阳能电池包括半导体层和光伏层。该光电层包括由从半导体层向上延伸并由本征半导体材料构成的核 - 纳米线和覆盖核 - 纳米线外部并且由半导体材料构成的壳纳米线构成的半导体结构。形成半导体层的半导体材料是n型，并且形成单元纳米线的半导体材料是p型。或者，形成半导体层的半导体材料是p型，并且形成单元纳米线的半导体材料是n型。

2. 发明申请

WO2011025216A3 PHOTODETECTOR USING A GRAPHENE THIN FILM AND NANOPARTICLES, AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：采用石墨薄膜和纳米颗粒的光电探测器及其制造方法
公开(公告)号：WO2011025216A3
公开(公告)日：2011-07-07
申请号：PCT/KR2010005631
申请日：2010-08-24
申请人： IUCF HYU , KIM TAE-WHAN , JUNG JAE-HOON , SON DONG-ICK , LEE JUNG-MIN , YANG HEE-YEON , PARK WON-IL
发明人： KIM TAE-WHAN , JUNG JAE-HOON , SON DONG-ICK , LEE JUNG-MIN , YANG HEE-YEON , PARK WON-IL
IPC分类号： H01L31/0248 , B82B1/00
CPC分类号： H01L31/035209 , H01L31/112 , H01L51/428
摘要： Provided are a photodetector using a graphene thin film and nanoparticles and a method for producing same. The photodetector of the present invention comprises: a sheet-shaped graphene thin film produced by the deposition of graphene using a vapor carbon source; and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, and consisting of nanoparticles without a matrix material. The above-described photodetector has a planar structure in which the graphene thin film is used as a channel and as an electrode, and nanoparticles are used as a photovoltaic material (which forms an electron-hole pair by the photoelectron-motive force produced by ultraviolet rays). The photodetector of the present invention has a remarkably simple structure and can be produced at a low cost, thus improving productivity. Further, the photodetector of the present invention comprises said graphene thin film, and thus can operate with low power consumption.
摘要翻译：提供了使用石墨烯薄膜和纳米颗粒的光电探测器及其制造方法。本发明的光检测器包括：通过使用蒸汽碳源沉积石墨烯而产生的片状石墨烯薄膜; 以及形成在所述石墨烯薄膜上并且被图案化以限定所述石墨烯薄膜的电极区域并且由不含基质材料的纳米颗粒组成的纳米颗粒层。上述光检测器具有将石墨烯薄膜用作沟道和电极的平面结构，并且使用纳米颗粒作为光伏材料（其通过由紫外线产生的光电子动力形成电子 - 空穴对射线）。本发明的光检测器具有非常简单的结构并且可以以低成本生产，因此提高了生产率。此外，本发明的光检测器包括所述石墨烯薄膜，因此可以以低功耗工作。

3. 发明申请

WO2008123869A3 MILLIMETER-LONG NANOWIRES 审中-公开
标题翻译：米兰长鼻子
公开(公告)号：WO2008123869A3
公开(公告)日：2008-12-04
申请号：PCT/US2007024222
申请日：2007-11-20
申请人： HARVARD COLLEGE , PARK WON IL , ZHENG GENGFENG , JIANG XIAOCHENG , TIAN BOZHI , LIEBER CHARLES M
发明人： PARK WON IL , ZHENG GENGFENG , JIANG XIAOCHENG , TIAN BOZHI , LIEBER CHARLES M
IPC分类号： H01L29/06 , C30B29/06 , H01L21/20 , H01L29/16
CPC分类号： H01L29/0665 , B82Y10/00 , C30B25/00 , C30B25/18 , C30B29/06 , C30B29/60 , H01L21/02381 , H01L21/02521 , H01L21/02532 , H01L21/02573 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/16 , H01L29/1602
摘要： The present invention generally relates to wires, including nanowires such as semiconductor nanowires, which may be a single crystal in some cases. In one aspect, the present invention is generally directed to a relatively long semiconductor wire. The semiconductor wire may have a length of at least about 10 micrometers, at least about 100 micrometers, or even at least about 1 mm. In certain cases, the semiconductor wire has an aspect ratio of at least about 50,000. In some embodiments, the semiconductor wire has no more than 1 grain boundary per micrometer, and in certain embodiments, the semiconductor wire is a single crystal. In many instances, the semiconductor wire also has a substantially uniform diameter. Other aspects of the invention are directed to techniques for forming such semiconductor wires, e.g., using chemical vapor deposition, as well as devices including such semiconductor wires. For instance, one embodiment of the invention provides an electronic device having at least 50 transistors on a common nanoscale wire.
摘要翻译：本发明一般涉及包括诸如半导体纳米线的纳米线的导线，在某些情况下，其可以是单晶。一方面，本发明一般涉及一种较长的半导体线。半导体线可以具有至少约10微米，至少约100微米，或甚至至少约1mm的长度。在某些情况下，半导体线具有至少约50,000的纵横比。在一些实施例中，半导体线具有每微米不超过1个晶界，并且在某些实施例中，半导体线是单晶。在许多情况下，半导体线也具有基本均匀的直径。本发明的其它方面涉及用于形成这种半导体线的技术，例如使用化学气相沉积，以及包括这种半导体线的器件。例如，本发明的一个实施例提供一种在共同的纳米线上具有至少50个晶体管的电子器件。

4. 发明申请

WO2004109815A1 CONTACTS FABRIC USING HETEROSTRUCTURE OF METAL/SEMICONDUCTOR NANORODS AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：联系人使用金属/半导体纳米结构的结构及其制造方法
公开(公告)号：WO2004109815A1
公开(公告)日：2004-12-16
申请号：PCT/KR2004/000374
申请日：2004-02-24
申请人： POSTECH FOUNDATION , YI, Gyu-Chul , PARK, Won-Il
发明人： YI, Gyu-Chul , PARK, Won-Il
IPC分类号： H01L33/00
CPC分类号： H01L29/22 , B82Y10/00 , B82Y20/00 , H01L21/28537 , H01L21/2855 , H01L21/44 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/45 , H01L29/452 , H01L29/456 , H01L29/47 , H01L29/475 , H01L31/035281 , H01L31/108 , H01L33/20 , Y02E10/50
摘要： Provided are a contact fabric using a heterostructure of metal/semiconductor nanorods and a method of manufacturing the same. An ohmic contact fabric having a low contact resistance or a Schottky contact fabric having a rectification characteristic is formed by selectively depositing metal of nano-sizes onto predetermined portions of zinc oxide/semiconductor nanorods and controlling the work function of the deposited metal and the interfacial characteristics of metal/zinc oxide. The contact fabric can be applied to various nano-sized electronic devices, including Schottky diodes, optical devices, and arrays thereof.
摘要翻译：提供一种使用金属/半导体纳米棒的异质结构的接触织物及其制造方法。具有低接触电阻的欧姆接触织物或具有整流特性的肖特基接触织物通过将纳米尺寸的金属选择性地沉积到氧化锌/半导体纳米棒的预定部分上并控制沉积金属的功函数和界面特性的金属/氧化锌。接触织物可以应用于各种纳米尺寸的电子器件，包括肖特基二极管，光学器件及其阵列。

5. 发明申请

WO2004114422A1 P-N HETEROJUNCTION STRUCTURE OF ZINC OXIDE-BASED NANOROD AND SEMICONDUCTOR THIN FILM, PREPARATION THEREOF, AND NANO-DEVICE COMPRISING SAME 审中-公开
标题翻译：基于氧化锌的NANOROD和半导体薄膜的P-N异质结构及其制备方法以及包含其的纳米器件
公开(公告)号：WO2004114422A1
公开(公告)日：2004-12-29
申请号：PCT/KR2004/001546
申请日：2004-06-25
申请人： POSTECH FOUNDATION , YI, Gyu-Chul , PARK, Won-Il
发明人： YI, Gyu-Chul , PARK, Won-Il
IPC分类号： H01L33/00
CPC分类号： H01L29/267 , B82Y10/00 , B82Y30/00 , C30B29/16 , C30B29/605 , H01L21/0237 , H01L21/02389 , H01L21/02554 , H01L21/0256 , H01L21/02565 , H01L21/02568 , H01L21/02576 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/02664 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/2003 , H01L33/08 , H01L33/26 , H01L33/28
摘要： A heterojunction structure composed of a p-type semiconductor thin film and n-type ZnO-based nanorods epitaxially grown thereon exhibits high luminescence efficiency property due to facilitated tunneling of electrons through the nano-sized junction and the use of ZnO having high exciton energy as a light emitting material, and thus it can be advantageously used in nano-devices such as LED, field effect transistor, photodetector, sensor, etc.
摘要翻译：由p型半导体薄膜和外延生长的n型ZnO基纳米棒构成的异质结结构由于电子通过纳米尺度的结的隧道化以及使用具有高激子能的ZnO而具有高的发光效率特性发光材料，因此可以有利地用于诸如LED，场效应晶体管，光电检测器，传感器等的纳米器件中。

6. 发明申请

WO2008123869A2 MILLIMETER-LONG NANOWIRES 审中-公开
公开(公告)号：WO2008123869A2
公开(公告)日：2008-10-16
申请号：PCT/US2007/024222
申请日：2007-11-20
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , PARK, Won, Il , ZHENG, Gengfeng , JIANG, Xiaocheng , TIAN, Bozhi , LIEBER, Charles, M.
发明人： PARK, Won, Il , ZHENG, Gengfeng , JIANG, Xiaocheng , TIAN, Bozhi , LIEBER, Charles, M.
IPC分类号： H01L29/06 , H01L29/16
CPC分类号： H01L29/0665 , B82Y10/00 , C30B25/00 , C30B25/18 , C30B29/06 , C30B29/60 , H01L21/02381 , H01L21/02521 , H01L21/02532 , H01L21/02573 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/16 , H01L29/1602
摘要： The present invention generally relates to wires, including nanowires such as semiconductor nanowires, which may be a single crystal in some cases. In one aspect, the present invention is generally directed to a relatively long semiconductor wire. The semiconductor wire may have a length of at least about 10 micrometers, at least about 100 micrometers, or even at least about 1 mm. In certain cases, the semiconductor wire has an aspect ratio of at least about 50,000. In some embodiments, the semiconductor wire has no more than 1 grain boundary per micrometer, and in certain embodiments, the semiconductor wire is a single crystal. In many instances, the semiconductor wire also has a substantially uniform diameter. Other aspects of the invention are directed to techniques for forming such semiconductor wires, e.g., using chemical vapor deposition, as well as devices including such semiconductor wires. For instance, one embodiment of the invention provides an electronic device having at least 50 transistors on a common nanoscale wire.
摘要翻译：本发明总体上涉及包括诸如半导体纳米线的纳米线的导线，在一些情况下其可以是单晶。在一个方面，本发明总体上涉及较长的半导体线。半导体线可具有至少约10微米，至少约100微米或甚至至少约1mm的长度。在某些情况下，半导体线具有至少约50,000的纵横比。在一些实施例中，半导体线每微米具有不超过1个晶界，并且在某些实施例中，半导体线是单晶。在许多情况下，半导体线也具有基本均匀的直径。本发明的其它方面涉及用于形成这种半导体线的技术，例如使用化学气相沉积以及包括这种半导体线的器件。例如，本发明的一个实施例提供了在公共纳米级线上具有至少50个晶体管的电子器件。

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