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1. 发明申请

WO2019241351A1 ROTARY REACTOR FOR UNIFORM PARTICLE COATING WITH THIN FILMS 审中-公开
公开(公告)号：WO2019241351A1
公开(公告)日：2019-12-19
申请号：PCT/US2019/036721
申请日：2019-06-12
申请人： APPLIED MATERIALS, INC. , NEIKIRK, Colin C. , NARWANKAR, Pravin K. , GANGAKHEDKAR, Kaushal , SIVARAMAKRISHNAN, Visweswaren , FRANKEL, Jonathan , ISHIKAWA, David Masayuki , TRUONG, Quoc , YUDOVSKY, Joseph
发明人： NEIKIRK, Colin C. , NARWANKAR, Pravin K. , GANGAKHEDKAR, Kaushal , SIVARAMAKRISHNAN, Visweswaren , FRANKEL, Jonathan , ISHIKAWA, David Masayuki , TRUONG, Quoc , YUDOVSKY, Joseph
IPC分类号： C23C16/455 , C23C16/44 , C23C16/448 , C23C16/40 , A61K9/50
摘要： A reactor for coating particles includes one or more motors, a rotary vacuum chamber configured to hold particles to be coated, wherein the rotary vacuum chamber is coupled to the motors to rotate the rotary vacuum chamber in a first direction about an axial axis of a cylindrical portion of the rotary vacuum chamber, a vacuum port to exhaust gas from the rotary vacuum chamber, a paddle assembly including a rotatable drive shaft extending through the rotary vacuum chamber and coupled to the one or more motors and at least one paddle extending radially from the drive shaft, such that rotation of the drive shaft by the motors orbits the paddle about the drive shaft in a second direction, and a chemical delivery system including a gas outlet on the paddle configured inject process gas into the particles.

2. 发明申请

WO2011035157A3 APPARATUS AND METHODS FOR FORMING ENERGY STORAGE AND PHOTOVOLTAIC DEVICES IN A LINEAR SYSTEM 审中-公开
标题翻译：用于在线性系统中形成能量存储和光伏器件的装置和方法
公开(公告)号：WO2011035157A3
公开(公告)日：2011-07-14
申请号：PCT/US2010049335
申请日：2010-09-17
申请人： APPLIED MATERIALS INC , PUSHPARAJ VICTOR L , NARWANKAR PRAVIN K , HAAS DIETER , THAKUR BIPIN , ARCOT MAHESH , GUJAR VIKAS , NALAMASU OMKARAM
发明人： PUSHPARAJ VICTOR L , NARWANKAR PRAVIN K , HAAS DIETER , THAKUR BIPIN , ARCOT MAHESH , GUJAR VIKAS , NALAMASU OMKARAM
IPC分类号： H01L31/042
CPC分类号： C23C16/545 , B82Y10/00 , B82Y40/00 , H01L31/035227 , H01L31/075 , H01L31/1876 , H01L31/206 , H01L51/0048 , H01L51/4213 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.
摘要翻译：提供了用于在基底上形成复合材料的方法和设备。复合材料包括碳纳米管和/或纳米纤维，以及复合本征和掺杂硅结构。在一个实施方案中，基材为细长片材或网状材料的形式，并且该装置包括供应辊和卷取辊以在形成复合材料之前和之后支承网。纤维网被引导通过各种处理室以形成复合材料。在另一个实施方案中，大规模基材包含离散基材。离散的基板被支撑在传送系统上，或者由机器人处理，机器人将基板引导穿过处理室以在基板上形成复合材料。该复合材料可用于形成能量存储装置和/或光伏装置。

3. 发明申请

WO2011034751A2 HOT WIRE CHEMICAL VAPOR DEPOSITION (CVD) INLINE COATING TOOL 审中-公开
标题翻译：热线化学气相沉积（CVD）在线涂装工具
公开(公告)号：WO2011034751A2
公开(公告)日：2011-03-24
申请号：PCT/US2010047972
申请日：2010-09-07
申请人： APPLIED MATERIALS INC , HAAS DIETER , NARWANKAR PRAVIN K , THAKUR RANDHIR P S
发明人： HAAS DIETER , NARWANKAR PRAVIN K , THAKUR RANDHIR P S
IPC分类号： H01L21/205 , C23C16/54
CPC分类号： C23C16/24 , C23C16/54 , H01L21/02532 , H01L21/0262
摘要： Methods and apparatus for hot wire chemical vapor deposition (HWCVD) are provided herein. In some embodiments, an inline HWCVD tool may include a linear conveyor for moving a substrate through the linear process tool; and a multiplicity of HWCVD sources, the multiplicity of HWCVD sources being positioned parallel to and spaced apart from the linear conveyor and configured to deposit material on the surface of the substrate as the substrate moves along the linear conveyor; wherein the substrate is coated by the multiplicity of HWCVD sources without breaking vacuum. In some embodiments, methods of coating substrates may include depositing a first material from an HWCVD source on a substrate moving through a first deposition chamber; moving the substrate from the first deposition chamber to a second deposition chamber; and depositing a second material from a second HWCVD source on the substrate moving through the second deposition chamber.
摘要翻译：本文提供了热线化学气相沉积（HWCVD）的方法和装置。在一些实施例中，在线HWCVD工具可以包括用于通过线性处理工具移动衬底的线性输送机; 和多个HWCVD源，多个HWCVD源被定位成与线性传送器平行并与其间隔开，并且被配置为当衬底沿着线性传送器移动时将材料沉积在衬底的表面上; 其中所述衬底被多个HWCVD源涂覆而不破坏真空。在一些实施例中，涂覆基底的方法可以包括在移动通过第一沉积室的基底上沉积来自HWCVD源的第一材料; 将衬底从第一沉积室移动到第二沉积室; 以及将第二材料从第二HWCVD源沉积在移动通过第二沉积室的衬底上。

4. 发明申请

WO2008028082A3 PRECURSORS AND HARDWARE FOR CVD AND ALD 审中-公开
标题翻译： CVD和ALD的前体和硬件
公开(公告)号：WO2008028082A3
公开(公告)日：2008-04-24
申请号：PCT/US2007077301
申请日：2007-08-30
申请人： APPLIED MATERIALS INC , KHER SHREYAS S , NGUYEN SON T , NARWANKAR PRAVIN K , TANDON SANJEEV , JUMPER STEVE , SERMONA VINCENT
发明人： KHER SHREYAS S , NGUYEN SON T , NARWANKAR PRAVIN K , TANDON SANJEEV , JUMPER STEVE , SERMONA VINCENT
IPC分类号： C23C16/40 , C23C16/44
CPC分类号： C23C16/4404 , C23C16/34 , C23C16/405 , C23C16/45544 , C23C16/45553 , C23C16/45561 , C23C16/45582
摘要： The present invention generally comprises an apparatus for depositing high k dielectric or metal gate materials in which toxic, flammable, or pyrophoric precursors may be used. Exhaust conduits may be placed on the liquid precursor or solid precursor delivery cabinet, the gas panel, and the water vapor generator area. The exhaust conduits permit a technician to access the apparatus without undue exposure to toxic, pyrophoric, or flammable gases that may collect within the liquid deliver cabinet, gas panel, and water vapor generator area.
摘要翻译：本发明一般包括用于沉积高k电介质或金属栅极材料的装置，其中可使用有毒，易燃或发火前体。排气管道可以放置在液体前驱体或固体前驱体输送柜，气体面板和水蒸气发生器区域。排气管允许技术人员进入设备，而不会过度暴露于可能收集在液体输送柜，气体板和水蒸气发生器区域内的有毒，易燃或易燃气体。

5. 发明申请

WO2021248122A1 COATED DRUG COMPOSITIONS AND METHODS OF PREPARING THE SAME 审中-公开
公开(公告)号：WO2021248122A1
公开(公告)日：2021-12-09
申请号：PCT/US2021/036183
申请日：2021-06-07
申请人： APPLIED MATERIALS, INC. , WANG, Fei , WANG, Miaojun , FRANKEL, Jonathan , CHIRUVOLU, Shivkumar , NARWANKAR, Pravin K.
发明人： WANG, Fei , WANG, Miaojun , FRANKEL, Jonathan , CHIRUVOLU, Shivkumar , NARWANKAR, Pravin K. , GANAPATHY, Balaji
IPC分类号： A61K9/50 , A61K9/16 , A61K31/397 , A61K31/517 , A61K31/4422 , A61K9/501 , A61K9/5089
摘要： A pharmaceutical composition containing a metal oxide coated particle comprising 1) an amorphous solid dispersion (ASD) core containing an active pharmaceutical ingredient (API) and a polymer; and 2) a metal oxide coating, and the method of making said metal oxide coated particle by atomic layer deposition (ALD). The metal oxide coated particle is useful because it prevents the ASD from crystallization and helps maintain the ASD in an amorphous form.

6. 发明申请

WO2013116485A1 A ROTARY SUBSTRATE PROCESSING SYSTEM 审中-公开
标题翻译：旋转基板处理系统
公开(公告)号：WO2013116485A1
公开(公告)日：2013-08-08
申请号：PCT/US2013/024091
申请日：2013-01-31
申请人： APPLIED MATERIALS, INC. , YUDOVSKY, Joseph , HOFMANN, Ralf , OH, Jeonghoon , XIA, Li-qun , FUJITA, Toshiaki , NARWANKAR, Pravin, K. , PATIBANDLA, Nag, B. , SATYA, Srinivas , WU, Banqiu
发明人： YUDOVSKY, Joseph , HOFMANN, Ralf , OH, Jeonghoon , XIA, Li-qun , FUJITA, Toshiaki , NARWANKAR, Pravin, K. , PATIBANDLA, Nag, B. , SATYA, Srinivas , WU, Banqiu
IPC分类号： H01L21/205
CPC分类号： C23C16/54 , B05C13/00 , C23C16/45551
摘要： A substrate processing system for processing multiple substrates is provided and generally includes at least one processing platform and at least one staging platform. Each substrate is positioned on a substrate carrier disposed on a substrate support assembly. Multiple substrate carriers, each is configured to carry a substrate thereon, are positioned on the surface of the substrate support assembly. The processing platform and the staging platform, each includes a separate substrate support assembly, which can be rotated by a separate rotary track mechanism. Each rotary track mechanism is capable of supporting the substrate support assembly and continuously rotating multiple substrates carried by the substrate carriers and disposed on the substrate support assembly. Each substrate is thus processed through at least one shower head station and at least one buffer station, which are positioned at a distance above the rotary track mechanism of the processing platform. Each substrate can be transferred between the processing platform and the staging platform and in and out the substrate processing system.
摘要翻译：提供了一种用于处理多个基板的基板处理系统，并且通常包括至少一个处理平台和至少一个分段平台。每个衬底位于设置在衬底支撑组件上的衬底载体上。多个衬底载体，每个被配置为在其上承载衬底，位于衬底支撑组件的表面上。处理平台和分段平台各自包括单独的基板支撑组件，其可以通过单独的旋转轨道机构旋转。每个旋转轨道机构能够支撑基板支撑组件并且连续旋转由基板载体承载并且设置在基板支撑组件上的多个基板。因此，每个基板通过至少一个淋浴喷头站和至少一个缓冲站进行处理，所述至少一个缓冲站位于处理平台的旋转轨道机构上方的距离处。每个基板可以在处理平台和分段平台之间传送并进出基板处理系统。

7. 发明申请

WO2013116478A1 MULTI-CHAMBER SUBSTRATE PROCESSING SYSTEMS 审中-公开
标题翻译：多层基板处理系统
公开(公告)号：WO2013116478A1
公开(公告)日：2013-08-08
申请号：PCT/US2013/024079
申请日：2013-01-31
申请人： APPLIED MATERIALS, INC. , YUDOVSKY, Joseph , PATIBANDLA, Nag B. , NARWANKAR, Pravin K. , XIA, Li-Qun , FUJITA, Toshiaki , HOFMANN, Ralf , OH, Jeonghoon , SATYA, Srinivas , WU, Banqiu
发明人： YUDOVSKY, Joseph , PATIBANDLA, Nag B. , NARWANKAR, Pravin K. , XIA, Li-Qun , FUJITA, Toshiaki , HOFMANN, Ralf , OH, Jeonghoon , SATYA, Srinivas , WU, Banqiu
IPC分类号： H01L21/677 , H01L21/205 , C23C16/44
CPC分类号： C23C16/4584 , C23C16/45519 , C23C16/45551 , C23C16/54 , H01L21/67742
摘要： A substrate processing system for processing multiple substrates is provided and generally includes at least one substrate processing platform and at least one substrate staging platform. The substrate processing platform includes a rotary track system capable of supporting multiple substrate support assemblies and continuously rotating the substrate support assemblies, each carrying a substrate thereon. Each substrate is positioned on a substrates support assembly disposed on the rotary track system and being processed through at least one shower head station and at least one buffer station, which are positioned atop the rotary track system of the substrate processing platform. Multiple substrates disposed on the substrate support assemblies are processed in and out the substrate processing platform. The substrate staging platform includes at least one dual-substrate processing station, each dual- substrate processing station includes two substrate support assemblies for supporting two substrates thereon.
摘要翻译：提供了用于处理多个基板的基板处理系统，并且通常包括至少一个基板处理平台和至少一个基板分段平台。基板处理平台包括能够支撑多个基板支撑组件并且连续旋转基板支撑组件的旋转轨道系统，每个基板支撑组件在其上承载基板。每个基板定位在设置在旋转轨道系统上的基板支撑组件上，并且通过位于基板处理平台的旋转轨道系统顶部的至少一个喷头站和至少一个缓冲站进行处理。设置在基板支撑组件上的多个基板在基板处理平台内进出处理。衬底分级平台包括至少一个双衬底处理站，每个双衬底处理站包括用于在其上支撑两个衬底的两个衬底支撑组件。

8. 发明申请

WO2013115957A1 STACKED SUBSTRATE PROCESSING CHAMBERS 审中-公开
标题翻译：堆叠基板加工板
公开(公告)号：WO2013115957A1
公开(公告)日：2013-08-08
申请号：PCT/US2013/021237
申请日：2013-01-11
申请人： APPLIED MATERIALS, INC. , OH, Jeonghoon , HOFMANN, Ralf , FUJITA, Toshiaki , NARWANKAR, Pravin K. , PATIBANDLA, Nag B. , SATYA, Srinivas , WU, Banqiu , XIA, Li-Qun
发明人： OH, Jeonghoon , HOFMANN, Ralf , FUJITA, Toshiaki , NARWANKAR, Pravin K. , PATIBANDLA, Nag B. , SATYA, Srinivas , WU, Banqiu , XIA, Li-Qun
IPC分类号： H01L21/205 , H01L21/02
CPC分类号： H01L21/67178 , C23C16/54 , H01L21/6719
摘要： A substrate processing system for processing multiple substrates is provided and generally includes two or more substrate processing chambers stacked. The substrate processing chambers are generally grouped and stacked into one or more substrate processing platforms such that a fluid delivery system and/or an exhaust system can be shared within the group. Each substrate processing chamber is designed with a minimal effective processing region to conduct a fabrication process on the surface of a substrate. The substrate processing system is capable of simultaneously transferring multiple substrates in and out a group of stacked substrate processing chambers and to improve system processing throughput.
摘要翻译：提供了用于处理多个基板的基板处理系统，并且通常包括堆叠的两个或更多个基板处理室。基板处理室通常被分组并堆叠成一个或多个基板处理平台，使得流体输送系统和/或排气系统可以在该组内共享。每个基板处理室设计有最小的有效处理区域，以在基板的表面上进行制造工艺。基板处理系统能够同时将多个基板输入和输出一组堆叠的基板处理室，并且提高系统处理吞吐量。

9. 发明申请

WO2013033443A3 BEOL INTERCONNECT WITH CARBON NANOTUBES 审中-公开
公开(公告)号：WO2013033443A3
公开(公告)日：2013-03-07
申请号：PCT/US2012/053202
申请日：2012-08-30
申请人： APPLIED MATERIALS, INC. , GRIFFITH CRUZ, Joe , NARWANKAR, Pravin, K. , SUNDARRAJAN, Arvind , NARASIMHAN, Murali , SREEKALA, Subbalakshmi , PUSHPARAJ, Victor
发明人： GRIFFITH CRUZ, Joe , NARWANKAR, Pravin, K. , SUNDARRAJAN, Arvind , NARASIMHAN, Murali , SREEKALA, Subbalakshmi , PUSHPARAJ, Victor
IPC分类号： H01L21/28 , B82B3/00
摘要： An integrated circuit with BEOL interconnects may comprise: a substrate including a semiconductor device; a first layer of dielectric over the surface of the substrate, the first layer of dielectric including a filled via for making electrical contact to the semiconductor device; and a second layer of dielectric on the first layer of dielectric, the second layer of dielectric including a trench running perpendicular to the longitudinal axis of the filled via, the trench being filled with an interconnect line, the interconnect line comprising cross-linked carbon nanotubes and being physically and electrically connected to the filled via. Cross-linked CNTs are grown on catalyst particles on the bottom of the trench using growth conditions including a partial pressure of precursor gas greater than the transition partial pressure at which carbon nanotube growth transitions from a parallel carbon nanotube growth mode to a cross-linked carbon nanotube growth mode.

10. 发明申请

WO2004070796A9 TAILORING NITROGEN PROFILE IN SILICON OXYNITRIDE USING RAPID THERMAL ANNEALING WITH AMMONIA UNDER ULTRA-LOW PRESSURE 审中-公开
标题翻译：在超低压下氨氮快速热退火氧化亚氮化合物中的氮气分布
公开(公告)号：WO2004070796A9
公开(公告)日：2004-11-04
申请号：PCT/US2004003442
申请日：2004-02-04
申请人： APPLIED MATERIALS INC , NARWANKAR PRAVIN K , MINER GARY , LEPERT ARAUD
发明人： NARWANKAR PRAVIN K , MINER GARY , LEPERT ARAUD
IPC分类号： H01L21/28 , H01L21/3105 , H01L21/314 , H01L21/334 , H01L29/51 , H01L
CPC分类号： H01L21/28185 , H01L21/3105 , H01L21/3144 , H01L29/518 , H01L29/66181
摘要： A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.
摘要翻译：一种形成包含氮的电介质膜的方法。该方法包括使用氮化气体和快速热退火工艺将氮引入电介质膜中，其中快速热退火工艺使用等于或小于约10乇的超低压。

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