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1. 发明申请

WO2004042801A3 QUANTUM WELL INTERMIXING IN SEMICONDUCTOR PHOTONIC DEVICES 审中-公开
标题翻译：量子阱在半导体光子器件中的相互作用
公开(公告)号：WO2004042801A3
公开(公告)日：2004-10-28
申请号：PCT/GB0304705
申请日：2003-10-30
申请人： INTENSE PHOTONICS LTD , NAJDA STEPHEN PETER
发明人： NAJDA STEPHEN PETER
IPC分类号： H01S5/34
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3413
摘要： A method for fabricating a semiconductor device in a semiconductor structure, provides enhanced quantum well intermixing in desired regions of the device by forming a first, relatively high quality, epitaxial layer on a substrate, the high quality layer including a quantum well; forming a second, relatively lower quality, epitaxial defect layer on top of the high quality layer; and thermally processing the structure to effect at least partial diffusion of the defects from the defect layer into the high quality layer in order to achieve quantum well intermixing in the structure. The use of an epitaxially grown defect layer on top of, or within, a high quality epitaxially grown device body enables quantum well intermixing techniques to be performed at lower temperatures and thereby improves device characteristics.
摘要翻译：一种用于在半导体结构中制造半导体器件的方法，通过在衬底上形成第一相对高质量的外延层来提供器件的所需区域中增强的量子阱混合，所述高质量层包括量子阱; 在高质量层的顶部上形成第二相对较低质量的外延缺陷层; 以及热处理该结构以实现缺陷从缺陷层至少部分扩散到高质量层中，以实现量子阱在结构中的混合。在高质量外延生长的器件主体之上或之内使用外延生长的缺陷层使得量子阱混合技术能够在较低的温度下执行，从而改善器件特性。

2. 发明申请

WO03088367A8 INTEGRATED ACTIVE PHOTONIC DEVICE AND PHOTODETECTOR 审中-公开
标题翻译：集成有源光电器件和光电转换器
公开(公告)号：WO03088367A8
公开(公告)日：2005-01-13
申请号：PCT/GB0301461
申请日：2003-04-03
申请人： INTENSE PHOTONICS LTD , NAJDA STEPHEN
发明人： NAJDA STEPHEN
IPC分类号： H01L31/12 , H01S5/026 , H01L31/173 , H01L33/00
CPC分类号： H01S5/0264 , H01L31/125 , H01S5/162 , H01S5/164
摘要： An active photonic semiconductor device, such as a laser, optical amplifier or LED, is monolithically integrated with a photodetector. The device includes an optically active region formed on a substrate including a first electrical contact for initiating emission of photons within the optically active region; an optical confinement structure generally defining a principal optical path through the device and through said optically active region; and a photodetector structure formed on the substrate including a second electrical contact displaced from and substantially electrically insulated from the first contact, overlying a part of the principal optical path, for receiving carriers generated by said emitted photons. The photodetector is preferably positioned to cover an intermixed / non-intermixed region close to a facet of the device and also close to the active region of the device. The photodetector is weakly coupled to the optical confinement structure such that a very small proportion of the optical radiation can be monitored without deleteriously affecting the performance of the device.
摘要翻译：诸如激光器，光放大器或LED的有源光子半导体器件与光电检测器单片集成。该器件包括形成在衬底上的光学活性区域，该光学有源区域包括用于启动光学活性区域内的光子发射的第一电接触点; 光学限制结构通常限定通过该装置并通过所述光学活性区域的主要光路; 以及形成在所述基板上的光电检测器结构，所述光电检测器结构包括位于所述主光路的一部分上的与所述第一接触位置并基本上与所述第一接触基本上电绝缘的第二电接触，用于接收由所述发射的光子产生的载流光电探测器优选地定位成覆盖靠近该装置的小平面并且还靠近该装置的有源区域的混合/非混合区域。光电检测器弱耦合到光限制结构，使得可以监测非常小比例的光辐射，而不会有害地影响器件的性能。

3. 发明申请

WO2004046775A1 SEMICONDUCTOR OPTICAL DEVICE WITH BEAM FOCUSING 审中-公开
标题翻译：具有光束聚焦的半导体光学器件
公开(公告)号：WO2004046775A1
公开(公告)日：2004-06-03
申请号：PCT/GB2003/004906
申请日：2003-11-13
申请人： INTENSE PHOTONICS LIMITED , MARSH, John, Haig , NAJDA, Stephen
发明人： MARSH, John, Haig , NAJDA, Stephen
IPC分类号： G02B6/12
CPC分类号： G02B6/122 , G02B2006/12102 , H01S5/1014 , H01S5/18388
摘要： An integrated optical device formed in a semiconductor substrate incorporated an integral lens element in the substrate for providing focusing of the output beam. The device includes an optically active region for generating and confining optical radiation and having an output end for emitting an output beam from the optically active region; and a lens region adjacent the output end which has an increased band gap to the adjacent substrate material and is shaped to provide a lens effect on said output beam. The optically active region forms a cavity having a longitudinal axis, and the lens region extends along the longitudinal axis and has a lateral extent that varies as a function of distance along the longitudinal axis.
摘要翻译：一种集成光学器件，形成在半导体衬底中，该半导体衬底将整体透镜元件结合在衬底中，以提供输出光束的聚焦。该装置包括用于产生和限制光学辐射的光学有源区域，并且具有用于从光学活性区域发射输出光束的输出端; 以及与输出端相邻的透镜区域，其具有与相邻基底材料的带隙增加并且被成形为在所述输出光束上提供透镜效应。光学活性区域形成具有纵向轴线的空腔，并且透镜区域沿着纵向轴线延伸并且具有随着沿着纵向轴线的距离的函数而变化的横向范围。

4. 发明申请

WO2006021755A1 CARRIER FOR ARRAY OF OPTICAL EMITTERS 审中-公开
标题翻译：光电发射阵列的载体
公开(公告)号：WO2006021755A1
公开(公告)日：2006-03-02
申请号：PCT/GB2005/003238
申请日：2005-08-19
申请人： INTENSE LIMITED , MARSH, John, Haig , NAJDA, Stephen
发明人： MARSH, John, Haig , NAJDA, Stephen
IPC分类号： H01S5/40
CPC分类号： H01S5/02252 , H01S5/005 , H01S5/02284 , H01S5/0683 , H01S5/4012 , H01S5/4031 , H01S5/4087
摘要： A carrier for multiple monolithic semiconductor optical components facilitates precision mounting of the components so as to achieve a two-dimensional array of optical output beams. The carrier includes a first planar substrate region for positioning and supporting a first one of said optical components in a first plane and a second planar substrate region for positioning and supporting a second one of said optical component in a second plane different from the first plane. When optical components are mounted, a resulting device comprises a first and a second monolithic laser array, each monolithic laser array comprising a plurality of laser elements each extending generally in an x-z plane, the z-axis being defined substantially parallel to the optical axes of the laser elements. The first and second laser arrays are separated along the y-axis by being disposed on different regions of the carrier substrate in different x-z planes.
摘要翻译：用于多个单片半导体光学部件的载体有助于组件的精确安装，以便实现光输出光束的二维阵列。载体包括用于在第一平面中定位和支撑第一个所述光学部件的第一平面基板区域和用于在不同于第一平面的第二平面中定位和支撑第二个所述光学部件的第二平面基板区域。当安装光学部件时，所得到的器件包括第一和第二单片激光器阵列，每个单片激光器阵列包括大体上以xz平面延伸的多个激光元件，z轴基本上平行于激光元件。通过在不同的x-z平面上设置在载体衬底的不同区域上，沿着y轴分离第一和第二激光器阵列。

5. 发明申请

WO2003088367A3 INTEGRATED ACTIVE PHOTONIC DEVICE AND PHOTODETECTOR 审中-公开
公开(公告)号：WO2003088367A3
公开(公告)日：2003-10-23
申请号：PCT/GB2003/001461
申请日：2003-04-03
申请人： INTENSE PHOTONICS LIMITED , NAJDA, Stephen
发明人： NAJDA, Stephen
IPC分类号： H01L31/173
摘要： An active photonic semiconductor device, such as a laser, optical amplifier or LED, is monolithically integrated with a photodetector. The device includes an optically active region formed on a substrate including a first electrical contact for initiating emission of photons within the optically active region; an optical confinement structure generally defining a principal optical path through the device and through said optically active region; and a photodetector structure formed on the substrate including a second electrical contact displaced from and substantially electrically insulated from the first contact, overlying a part of the principal optical path, for receiving carriers generated by said emitted photons. The photodetector is preferably positioned to cover an intermixed / non-intermixed region close to a facet of the device and also close to the active region of the device. The photodetector is weakly coupled to the optical confinement structure such that a very small proportion of the optical radiation can be monitored without deleteriously affecting the performance of the device.

6. 发明申请

WO2005024483A1 INTEGRATED OPTICAL SYSTEMS FOR GENERATING AN ARRAY OF BEAM OUTPUTS 审中-公开
标题翻译：用于生成束阵列的集成光学系统
公开(公告)号：WO2005024483A1
公开(公告)日：2005-03-17
申请号：PCT/GB2004/003769
申请日：2004-09-03
申请人： INTENSE PHOTONICS LIMITED , MARSH, John, Haig , NAJDA, Stephen
发明人： MARSH, John, Haig , NAJDA, Stephen
IPC分类号： G02B6/42
CPC分类号： H01S5/4025 , G02B6/4249 , G02B2006/12195 , H01S5/4075
摘要： An optical system for producing an array of single transverse mode laser beam output includes a monolithic laser array (23) having a plurality of outputs (5) in which each laser (4) is adapted for operation so as to produce a single transverse mode output; and an array of waveguides (10), the waveguide array being positioned in relation to the laser array such that each laser output from the laser array couples into an input of a respective waveguide (11) in the waveguide array, the waveguide array maintaining the single transverse mode of each laser output at a respective waveguide output to provide a single transverse mode beam output. Multiple laser arrays (23) be coupled to a single waveguide array (10) enabling the formation of very large arrays and arrays with beam pitch smaller than otherwise possible.
摘要翻译：用于产生单横模激光束输出阵列的光学系统包括具有多个输出（5）的单片激光器阵列（23），其中每个激光器（4）适于操作，以便产生单个横模输出 ; 和波导阵列（10），所述波导阵列相对于所述激光阵列定位，使得来自所述激光器阵列的每个激光输出耦合到所述波导阵列中的相应波导（11）的输入，所述波导阵列保持在相应的波导输出处的每个激光器输出的单横向模式以提供单个横向模式波束输出。多个激光阵列（23）耦合到单个波导阵列（10），使得能够形成非常大的阵列和阵列，其中光束间距小于否则可能。

7. 发明申请

WO03100823A3 CONTROL OF CONTACT RESISTANCE IN QUANTUM WELL INTERMIXED DEVICES 审中-公开
标题翻译：量子阱介质中接触电阻的控制
公开(公告)号：WO03100823A3
公开(公告)日：2004-05-27
申请号：PCT/GB0302186
申请日：2003-05-21
申请人： INTENSE PHOTONICS LTD , NAJDA STEPHEN , MCDOUGALL STEWART DUNCAN , LIU XUEFENG
发明人： NAJDA STEPHEN , MCDOUGALL STEWART DUNCAN , LIU XUEFENG
IPC分类号： H01L21/00 , H01L21/18 , H01L33/00 , H01S5/34 , H01S5/343 , H01L21/285 , H01S5/02
CPC分类号： B82Y20/00 , H01L21/182 , H01L33/005 , H01S5/3414 , H01S5/343 , H01S5/34313
摘要： A method of performing quantum well intermixing in a semiconductor device structure uses a sacrificial part of a cap layer, that is removed after QWI processing, to restore the cap surface to a condition in which high performance contacts are still possible. The method includes: a) forming a layered quantum well structure including a doped cap layer; b) forming an etch stop layer over said cap layer; c) forming a sacrificial layer over said etch stop layer, said etch stop layer having a substantially lower etch rate than said sacrificial layer when exposed to predetermined etch conditions; d) carrying out a quantum well intermixing process on the device structure, which process induces significant damage to at least a portion of the sacrificial layer; e) removing the sacrificial layer in at least a contact region of the device using an etch procedure selective against the etch stop layer to expose said etch stop layer in the contact region; and f) forming a contact over the layered quantum well structure in at least said contact region.
摘要翻译：在半导体器件结构中执行量子阱混合的方法使用在QWI处理之后去除的帽层的牺牲部分，以将盖表面恢复到仍然可能存在高性能接触的状态。该方法包括：a）形成包括掺杂帽层的层状量子阱结构; b）在所述盖层上形成蚀刻停止层; c）在所述蚀刻停止层上形成牺牲层，当暴露于预定蚀刻条件时，所述蚀刻停止层具有比所述牺牲层显着更低的蚀刻速率; d）对器件结构进行量子阱混合过程，该过程对牺牲层的至少一部分引起显着的损伤; e）使用对所述蚀刻停止层选择性的蚀刻工艺在所述器件的至少接触区域中去除所述牺牲层，以暴露所述接触区域中的所述蚀刻停止层; 以及f）在至少所述接触区域中在层状量子阱结构上形成接触。

8. 发明申请

WO2004042801A2 QUANTUM WELL INTERMIXING IN SEMICONDUCTOR PHOTONIC DEVICES 审中-公开
标题翻译：半导体光电器件中的量子阱密度
公开(公告)号：WO2004042801A2
公开(公告)日：2004-05-21
申请号：PCT/GB2003/004705
申请日：2003-10-30
申请人： INTENSE PHOTONICS LIMITED , NAJDA, Stephen, Peter
发明人： NAJDA, Stephen, Peter
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3413
摘要： A method for fabricating a semiconductor device in a semiconductor structure, provides enhanced quantum well intermixing in desired regions of the device by forming a first, relatively high quality, epitaxial layer on a substrate, the high quality layer including a quantum well; forming a second, relatively lower quality, epitaxial defect layer on top of the high quality layer; and thermally processing the structure to effect at least partial diffusion of the defects from the defect layer into the high quality layer in order to achieve quantum well intermixing in the structure. The use of an epitaxially grown defect layer on top of, or within, a high quality epitaxially grown device body enables quantum well intermixing techniques to be performed at lower temperatures and thereby improves device characteristics.
摘要翻译：一种用于制造半导体结构中的半导体器件的方法，通过在衬底上形成第一相对较高质量的外延层，该高质量层包括量子阱，在器件的期望区域中提供增强的量子阱混合; 在高质量层的顶部形成第二，较低质量的外延缺陷层; 并且对所述结构进行热处理以使所述缺陷至少部分地从所述缺陷层扩散到所述高质量层中，以便在所述结构中实现量子阱混合。在高质量外延生长的器件本体之上或之内使用外延生长的缺陷层使得能够在较低温度下进行量子阱互混技术，从而提高器件特性。

9. 发明申请

WO2003100823A2 CONTROL OF CONTACT RESISTANCE IN QUANTUM WELL INTERMIXED DEVICES 审中-公开
标题翻译：量子阱介质器件接触电阻的控制
公开(公告)号：WO2003100823A2
公开(公告)日：2003-12-04
申请号：PCT/GB2003/002186
申请日：2003-05-21
申请人： INTENSE PHOTONICS LIMITED , NAJDA, Stephen , McDOUGALL, Stewart, Duncan , LIU, Xuefeng
发明人： NAJDA, Stephen , McDOUGALL, Stewart, Duncan , LIU, Xuefeng
IPC分类号： H01L
CPC分类号： B82Y20/00 , H01L21/182 , H01L33/005 , H01S5/3414 , H01S5/343 , H01S5/34313
摘要： A method of performing quantum well intermixing in a semiconductor device structure uses a sacrificial part of a cap layer, that is removed after QWI processing, to restore the cap surface to a condition in which high performance contacts are still possible. The method includes: a) forming a layered quantum well structure including a doped cap layer; b) forming an etch stop layer over said cap layer; c) forming a sacrificial layer over said etch stop layer, said etch stop layer having a substantially lower etch rate than said sacrificial layer when exposed to predetermined etch conditions; d) carrying out a quantum well intermixing process on the device structure, which process induces significant damage to at least a portion of the sacrificial layer; e) removing the sacrificial layer in at least a contact region of the device using an etch procedure selective against the etch stop layer to expose said etch stop layer in the contact region; and f) forming a contact over the layered quantum well structure in at least said contact region.
摘要翻译：在半导体器件结构中进行量子阱混合的方法使用在QWI处理之后去除的覆盖层的牺牲部分，以将盖表面恢复到仍然可能存在高性能接触的状态。该方法包括：a）形成包括掺杂帽层的层状量子阱结构; b）在所述盖层上形成蚀刻停止层; c）在所述蚀刻停止层上形成牺牲层，当暴露于预定的蚀刻条件时，所述蚀刻停止层具有比所述牺牲层显着更低的蚀刻速率; d）在器件结构上执行量子阱混合过程，该过程对牺牲层的至少一部分引起显着的损伤; e）使用对所述蚀刻停止层选择性的蚀刻程序在所述器件的至少接触区域中去除所述牺牲层，以暴露所述接触区域中的所述蚀刻停止层; 以及f）在至少所述接触区域中在层状量子阱结构上形成接触。

10. 发明申请

WO03088367A2 INTEGRATED ACTIVE PHOTONIC DEVICE AND PHOTODETECTOR 审中-公开
标题翻译：集成有源光电器件和光电转换器
公开(公告)号：WO03088367A2
公开(公告)日：2003-10-23
申请号：PCT/GB0301461
申请日：2003-04-03
申请人： INTENSE PHOTONICS LTD , NAJDA STEPHEN
发明人： NAJDA STEPHEN
IPC分类号： H01L31/12 , H01S5/026 , H01L31/00
CPC分类号： H01S5/0264 , H01L31/125 , H01S5/162 , H01S5/164
摘要： An active photonic semiconductor device, such as a laser, optical amplifier or LED, is monolithically integrated with a photodetector. The device includes an optically active region formed on a substrate including a first electrical contact for initiating emission of photons within the optically active region; an optical confinement structure generally defining a principal optical path through the device and through said optically active region; and a photodetector structure formed on the substrate including a second electrical contact displaced from and substantially electrically insulated from the first contact, overlying a part of the principal optical path, for receiving carriers generated by said emitted photons. The photodetector is preferably positioned to cover an intermixed / non-intermixed region close to a facet of the device and also close to the active region of the device. The photodetector is weakly coupled to the optical confinement structure such that a very small proportion of the optical radiation can be monitored without deleteriously affecting the performance of the device.
摘要翻译：诸如激光器，光放大器或LED的有源光子半导体器件与光电检测器单片集成。该器件包括形成在衬底上的光学活性区域，该光学有源区域包括用于启动光学活性区域内的光子发射的第一电接触点; 光学限制结构通常限定通过该装置并通过所述光学活性区域的主要光路; 以及形成在所述基板上的光电检测器结构，所述光电检测器结构包括位于所述主光路的一部分上的与所述第一接触位置并基本上与电绝缘的第二电接触，用于接收由所述发射的光子产生的载流子。光电探测器优选地定位成覆盖靠近该装置的小平面并且还靠近该装置的有源区域的混合/非混合区域。光电检测器弱耦合到光限制结构，使得可以监测非常小比例的光辐射，而不会有害地影响器件的性能。

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