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1. 发明申请

WO03100823A3 CONTROL OF CONTACT RESISTANCE IN QUANTUM WELL INTERMIXED DEVICES 审中-公开
标题翻译：量子阱介质中接触电阻的控制
公开(公告)号：WO03100823A3
公开(公告)日：2004-05-27
申请号：PCT/GB0302186
申请日：2003-05-21
申请人： INTENSE PHOTONICS LTD , NAJDA STEPHEN , MCDOUGALL STEWART DUNCAN , LIU XUEFENG
发明人： NAJDA STEPHEN , MCDOUGALL STEWART DUNCAN , LIU XUEFENG
IPC分类号： H01L21/00 , H01L21/18 , H01L33/00 , H01S5/34 , H01S5/343 , H01L21/285 , H01S5/02
CPC分类号： B82Y20/00 , H01L21/182 , H01L33/005 , H01S5/3414 , H01S5/343 , H01S5/34313
摘要： A method of performing quantum well intermixing in a semiconductor device structure uses a sacrificial part of a cap layer, that is removed after QWI processing, to restore the cap surface to a condition in which high performance contacts are still possible. The method includes: a) forming a layered quantum well structure including a doped cap layer; b) forming an etch stop layer over said cap layer; c) forming a sacrificial layer over said etch stop layer, said etch stop layer having a substantially lower etch rate than said sacrificial layer when exposed to predetermined etch conditions; d) carrying out a quantum well intermixing process on the device structure, which process induces significant damage to at least a portion of the sacrificial layer; e) removing the sacrificial layer in at least a contact region of the device using an etch procedure selective against the etch stop layer to expose said etch stop layer in the contact region; and f) forming a contact over the layered quantum well structure in at least said contact region.
摘要翻译：在半导体器件结构中执行量子阱混合的方法使用在QWI处理之后去除的帽层的牺牲部分，以将盖表面恢复到仍然可能存在高性能接触的状态。该方法包括：a）形成包括掺杂帽层的层状量子阱结构; b）在所述盖层上形成蚀刻停止层; c）在所述蚀刻停止层上形成牺牲层，当暴露于预定蚀刻条件时，所述蚀刻停止层具有比所述牺牲层显着更低的蚀刻速率; d）对器件结构进行量子阱混合过程，该过程对牺牲层的至少一部分引起显着的损伤; e）使用对所述蚀刻停止层选择性的蚀刻工艺在所述器件的至少接触区域中去除所述牺牲层，以暴露所述接触区域中的所述蚀刻停止层; 以及f）在至少所述接触区域中在层状量子阱结构上形成接触。

2. 发明申请

WO03088367A8 INTEGRATED ACTIVE PHOTONIC DEVICE AND PHOTODETECTOR 审中-公开
标题翻译：集成有源光电器件和光电转换器
公开(公告)号：WO03088367A8
公开(公告)日：2005-01-13
申请号：PCT/GB0301461
申请日：2003-04-03
申请人： INTENSE PHOTONICS LTD , NAJDA STEPHEN
发明人： NAJDA STEPHEN
IPC分类号： H01L31/12 , H01S5/026 , H01L31/173 , H01L33/00
CPC分类号： H01S5/0264 , H01L31/125 , H01S5/162 , H01S5/164
摘要： An active photonic semiconductor device, such as a laser, optical amplifier or LED, is monolithically integrated with a photodetector. The device includes an optically active region formed on a substrate including a first electrical contact for initiating emission of photons within the optically active region; an optical confinement structure generally defining a principal optical path through the device and through said optically active region; and a photodetector structure formed on the substrate including a second electrical contact displaced from and substantially electrically insulated from the first contact, overlying a part of the principal optical path, for receiving carriers generated by said emitted photons. The photodetector is preferably positioned to cover an intermixed / non-intermixed region close to a facet of the device and also close to the active region of the device. The photodetector is weakly coupled to the optical confinement structure such that a very small proportion of the optical radiation can be monitored without deleteriously affecting the performance of the device.
摘要翻译：诸如激光器，光放大器或LED的有源光子半导体器件与光电检测器单片集成。该器件包括形成在衬底上的光学活性区域，该光学有源区域包括用于启动光学活性区域内的光子发射的第一电接触点; 光学限制结构通常限定通过该装置并通过所述光学活性区域的主要光路; 以及形成在所述基板上的光电检测器结构，所述光电检测器结构包括位于所述主光路的一部分上的与所述第一接触位置并基本上与所述第一接触基本上电绝缘的第二电接触，用于接收由所述发射的光子产生的载流光电探测器优选地定位成覆盖靠近该装置的小平面并且还靠近该装置的有源区域的混合/非混合区域。光电检测器弱耦合到光限制结构，使得可以监测非常小比例的光辐射，而不会有害地影响器件的性能。

3. 发明申请

WO03088367A2 INTEGRATED ACTIVE PHOTONIC DEVICE AND PHOTODETECTOR 审中-公开
标题翻译：集成有源光电器件和光电转换器
公开(公告)号：WO03088367A2
公开(公告)日：2003-10-23
申请号：PCT/GB0301461
申请日：2003-04-03
申请人： INTENSE PHOTONICS LTD , NAJDA STEPHEN
发明人： NAJDA STEPHEN
IPC分类号： H01L31/12 , H01S5/026 , H01L31/00
CPC分类号： H01S5/0264 , H01L31/125 , H01S5/162 , H01S5/164
摘要： An active photonic semiconductor device, such as a laser, optical amplifier or LED, is monolithically integrated with a photodetector. The device includes an optically active region formed on a substrate including a first electrical contact for initiating emission of photons within the optically active region; an optical confinement structure generally defining a principal optical path through the device and through said optically active region; and a photodetector structure formed on the substrate including a second electrical contact displaced from and substantially electrically insulated from the first contact, overlying a part of the principal optical path, for receiving carriers generated by said emitted photons. The photodetector is preferably positioned to cover an intermixed / non-intermixed region close to a facet of the device and also close to the active region of the device. The photodetector is weakly coupled to the optical confinement structure such that a very small proportion of the optical radiation can be monitored without deleteriously affecting the performance of the device.
摘要翻译：诸如激光器，光放大器或LED的有源光子半导体器件与光电检测器单片集成。该器件包括形成在衬底上的光学活性区域，该光学有源区域包括用于启动光学活性区域内的光子发射的第一电接触点; 光学限制结构通常限定通过该装置并通过所述光学活性区域的主要光路; 以及形成在所述基板上的光电检测器结构，所述光电检测器结构包括位于所述主光路的一部分上的与所述第一接触位置并基本上与电绝缘的第二电接触，用于接收由所述发射的光子产生的载流子。光电探测器优选地定位成覆盖靠近该装置的小平面并且还靠近该装置的有源区域的混合/非混合区域。光电检测器弱耦合到光限制结构，使得可以监测非常小比例的光辐射，而不会有害地影响器件的性能。

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