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    • 1. 发明申请
    • SEMICONDUCTOR OPTICAL DEVICE WITH BEAM FOCUSING
    • 具有光束聚焦的半导体光学器件
    • WO2004046775A1
    • 2004-06-03
    • PCT/GB2003/004906
    • 2003-11-13
    • INTENSE PHOTONICS LIMITEDMARSH, John, HaigNAJDA, Stephen
    • MARSH, John, HaigNAJDA, Stephen
    • G02B6/12
    • G02B6/122G02B2006/12102H01S5/1014H01S5/18388
    • An integrated optical device formed in a semiconductor substrate incorporated an integral lens element in the substrate for providing focusing of the output beam. The device includes an optically active region for generating and confining optical radiation and having an output end for emitting an output beam from the optically active region; and a lens region adjacent the output end which has an increased band gap to the adjacent substrate material and is shaped to provide a lens effect on said output beam. The optically active region forms a cavity having a longitudinal axis, and the lens region extends along the longitudinal axis and has a lateral extent that varies as a function of distance along the longitudinal axis.
    • 一种集成光学器件,形成在半导体衬底中,该半导体衬底将整体透镜元件结合在衬底中,以提供输出光束的聚焦。 该装置包括用于产生和限制光学辐射的光学有源区域,并且具有用于从光学活性区域发射输出光束的输出端; 以及与输出端相邻的透镜区域,其具有与相邻基底材料的带隙增加并且被成形为在所述输出光束上提供透镜效应。 光学活性区域形成具有纵向轴线的空腔,并且透镜区域沿着纵向轴线延伸并且具有随着沿着纵向轴线的距离的函数而变化的横向范围。
    • 2. 发明申请
    • INTEGRATED OPTICAL SYSTEMS FOR GENERATING AN ARRAY OF BEAM OUTPUTS
    • 用于生成束阵列的集成光学系统
    • WO2005024483A1
    • 2005-03-17
    • PCT/GB2004/003769
    • 2004-09-03
    • INTENSE PHOTONICS LIMITEDMARSH, John, HaigNAJDA, Stephen
    • MARSH, John, HaigNAJDA, Stephen
    • G02B6/42
    • H01S5/4025G02B6/4249G02B2006/12195H01S5/4075
    • An optical system for producing an array of single transverse mode laser beam output includes a monolithic laser array (23) having a plurality of outputs (5) in which each laser (4) is adapted for operation so as to produce a single transverse mode output; and an array of waveguides (10), the waveguide array being positioned in relation to the laser array such that each laser output from the laser array couples into an input of a respective waveguide (11) in the waveguide array, the waveguide array maintaining the single transverse mode of each laser output at a respective waveguide output to provide a single transverse mode beam output. Multiple laser arrays (23) be coupled to a single waveguide array (10) enabling the formation of very large arrays and arrays with beam pitch smaller than otherwise possible.
    • 用于产生单横模激光束输出阵列的光学系统包括具有多个输出(5)的单片激光器阵列(23),其中每个激光器(4)适于操作,以便产生单个横模输出 ; 和波导阵列(10),所述波导阵列相对于所述激光阵列定位,使得来自所述激光器阵列的每个激光输出耦合到所述波导阵列中的相应波导(11)的输入,所述波导阵列保持 在相应的波导输出处的每个激光器输出的单横向模式以提供单个横向模式波束输出。 多个激光阵列(23)耦合到单个波导阵列(10),使得能够形成非常大的阵列和阵列,其中光束间距小于否则可能。
    • 3. 发明申请
    • CARRIER FOR ARRAY OF OPTICAL EMITTERS
    • 光电发射阵列的载体
    • WO2006021755A1
    • 2006-03-02
    • PCT/GB2005/003238
    • 2005-08-19
    • INTENSE LIMITEDMARSH, John, HaigNAJDA, Stephen
    • MARSH, John, HaigNAJDA, Stephen
    • H01S5/40
    • H01S5/02252H01S5/005H01S5/02284H01S5/0683H01S5/4012H01S5/4031H01S5/4087
    • A carrier for multiple monolithic semiconductor optical components facilitates precision mounting of the components so as to achieve a two-dimensional array of optical output beams. The carrier includes a first planar substrate region for positioning and supporting a first one of said optical components in a first plane and a second planar substrate region for positioning and supporting a second one of said optical component in a second plane different from the first plane. When optical components are mounted, a resulting device comprises a first and a second monolithic laser array, each monolithic laser array comprising a plurality of laser elements each extending generally in an x-z plane, the z-axis being defined substantially parallel to the optical axes of the laser elements. The first and second laser arrays are separated along the y-axis by being disposed on different regions of the carrier substrate in different x-z planes.
    • 用于多个单片半导体光学部件的载体有助于组件的精确安装,以便实现光输出光束的二维阵列。 载体包括用于在第一平面中定位和支撑第一个所述光学部件的第一平面基板区域和用于在不同于第一平面的第二平面中定位和支撑第二个所述光学部件的第二平面基板区域。 当安装光学部件时,所得到的器件包括第一和第二单片激光器阵列,每个单片激光器阵列包括大体上以xz平面延伸的多个激光元件,z轴基本上平行于 激光元件。 通过在不同的x-z平面上设置在载体衬底的不同区域上,沿着y轴分离第一和第二激光器阵列。
    • 5. 发明申请
    • CONTROL OF CONTACT RESISTANCE IN QUANTUM WELL INTERMIXED DEVICES
    • 量子阱介质器件接触电阻的控制
    • WO2003100823A2
    • 2003-12-04
    • PCT/GB2003/002186
    • 2003-05-21
    • INTENSE PHOTONICS LIMITEDNAJDA, StephenMcDOUGALL, Stewart, DuncanLIU, Xuefeng
    • NAJDA, StephenMcDOUGALL, Stewart, DuncanLIU, Xuefeng
    • H01L
    • B82Y20/00H01L21/182H01L33/005H01S5/3414H01S5/343H01S5/34313
    • A method of performing quantum well intermixing in a semiconductor device structure uses a sacrificial part of a cap layer, that is removed after QWI processing, to restore the cap surface to a condition in which high performance contacts are still possible. The method includes: a) forming a layered quantum well structure including a doped cap layer; b) forming an etch stop layer over said cap layer; c) forming a sacrificial layer over said etch stop layer, said etch stop layer having a substantially lower etch rate than said sacrificial layer when exposed to predetermined etch conditions; d) carrying out a quantum well intermixing process on the device structure, which process induces significant damage to at least a portion of the sacrificial layer; e) removing the sacrificial layer in at least a contact region of the device using an etch procedure selective against the etch stop layer to expose said etch stop layer in the contact region; and f) forming a contact over the layered quantum well structure in at least said contact region.
    • 在半导体器件结构中进行量子阱混合的方法使用在QWI处理之后去除的覆盖层的牺牲部分,以将盖表面恢复到仍然可能存在高性能接触的状态。 该方法包括:a)形成包括掺杂帽层的层状量子阱结构; b)在所述盖层上形成蚀刻停止层; c)在所述蚀刻停止层上形成牺牲层,当暴露于预定的蚀刻条件时,所述蚀刻停止层具有比所述牺牲层显着更低的蚀刻速率; d)在器件结构上执行量子阱混合过程,该过程对牺牲层的至少一部分引起显着的损伤; e)使用对所述蚀刻停止层选择性的蚀刻程序在所述器件的至少接触区域中去除所述牺牲层,以暴露所述接触区域中的所述蚀刻停止层; 以及f)在至少所述接触区域中在层状量子阱结构上形成接触。