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1. 发明申请

WO2005062079A3 GENERATING MULTIPLE BANDGAPS USING MULTIPLE EPITAXIAL LAYERS 审中-公开
标题翻译：使用多个外延层生成多个条带
公开(公告)号：WO2005062079A3
公开(公告)日：2005-08-25
申请号：PCT/GB2004005452
申请日：2004-12-24
申请人： INTENSE LTD , YANSON DAN ANDREYEVITCH , BACCHIN GIANLUCA , KOWALSKI OLEK PETER , MCDOUGALL STEWART DUNCAN
发明人： YANSON DAN ANDREYEVITCH , BACCHIN GIANLUCA , KOWALSKI OLEK PETER , MCDOUGALL STEWART DUNCAN
IPC分类号： H01L21/18 , H01S5/026
CPC分类号： H01L21/182
摘要： A quantum well intermixing (QWI) technique for modifying an energy bandgap during the formation of optical semiconductor devices enables spatial control of the QWI process so as to achieve differing bandgap shifts across a wafer, device or substrate surface. The method includes: forming a substrate comprising one or more core layers defining at least one quantum well; depositing a succession of intermixing barrier layers over the quantum well, each successive intermixing barrier layer being formed of a semiconductor material and having a different etch characteristic than an immediately preceding barrier layer; etching away different numbers of the successive barrier layers in different regions of the substrate so as to provide different total thicknesses of barrier layer in different regions of the substrate; and applying an intermixing agent to the surface of the substrate such that the degree of intermixing in the quantum well region varies as a function of the total thickness of barrier layer, thereby forming different bandgaps in the quantum well in each of the respective regions.
摘要翻译：用于在光半导体器件形成期间修改能带隙的量子阱混合（QWI）技术能够对QWI工艺进行空间控制，以便在晶片，器件或衬底表面上实现不同的带隙偏移。该方法包括：形成包含限定至少一个量子阱的一个或多个核心层的衬底; 在量子阱上沉积一系列相互混合的阻挡层，每个连续的混合阻挡层由半导体材料形成并且具有比紧接在前的阻挡层不同的蚀刻特性; 在衬底的不同区域中蚀刻掉不同数量的连续势垒层，以便在衬底的不同区域中提供阻挡层的不同总厚度; 以及将混合剂施加到所述衬底的表面，使得所述量子阱区中的混合程度随阻挡层的总厚度而变化，由此在各个区域中的量子阱中形成不同的带隙。

2. 发明申请

WO2005057638A1 MULTIPLE ANNEAL INDUCED DISORDERING 审中-公开
标题翻译：多发性神经痛诱发性疾病
公开(公告)号：WO2005057638A1
公开(公告)日：2005-06-23
申请号：PCT/GB2004/004944
申请日：2004-11-24
申请人： INTENSE LIMITED , MARSH, John, Haig , YANSON, Dan Andreyevitch , McDOUGALL, Stewart, Duncan
发明人： MARSH, John, Haig , YANSON, Dan Andreyevitch , McDOUGALL, Stewart, Duncan
IPC分类号： H01L21/18
CPC分类号： H01L21/182 , B82Y20/00 , H01S5/2068 , H01S5/343
摘要： A quantum well intermixing (QWI) technique for modifying an energy bandgap during the formation of optical semiconductor devices enables spatial control of the QWI process so as to achieve differing bandgap shifts across a wafer, device or substrate surface. The method includes: patterning the surface of a semiconductor substrate with QW1-initiating material in first regions of the surface; conducting a first thermal processing cycle on the substrate to generate a first bandgap shift in the first regions; patterning the surface of the substrate with QWI-initiating material in second regions of the surface, distinct from said first regions; and conducting a second thermal processing cycle on the substrate to generate a second bandgap shift in the second regions, and to generate a cumulative bandgap shift in the first regions, the cumulative bandgap shift being the cumulative result of said first and second thermal processing cycles. Further steps can produce additional cumulative bandgap shifts.
摘要翻译：用于在光半导体器件形成期间修改能带隙的量子阱混合（QWI）技术能够对QWI工艺进行空间控制，以便在晶片，器件或衬底表面上实现不同的带隙偏移。该方法包括：利用QW1引发材料在表面的第一区域中图案化半导体衬底的表面; 在所述基板上进行第一热处理循环，以在所述第一区域中产生第一带隙位移; 在与所述第一区域不同的表面的第二区域中用QWI引发材料对衬底的表面进行图案化; 以及在所述衬底上进行第二热处理循环以在所述第二区域中产生第二带隙偏移，并且在所述第一区域中产生累积带隙偏移，所述累积带隙位移是所述第一和第二热处理循环的累积结果。进一步的步骤可以产生额外的累积带隙位移。

3. 发明申请

WO02061814A3 METHOD OF MANUFACTURING OPTICAL DEVICES AND RELATED IMPROVEMENTS 审中-公开
标题翻译：制造光学器件的方法和相关改进
公开(公告)号：WO02061814A3
公开(公告)日：2003-09-18
申请号：PCT/GB0200445
申请日：2002-02-01
申请人： UNIV GLASGOW , MARSH JOHN HAIG , MCDOUGALL STEWART DUNCAN , HAMILTON CRAIG JAMES , KOWALSKI OLEK PETER
发明人： MARSH JOHN HAIG , MCDOUGALL STEWART DUNCAN , HAMILTON CRAIG JAMES , KOWALSKI OLEK PETER
IPC分类号： H01S5/343 , H01L25/00 , H01L31/18 , H01L33/04 , H01S5/026 , H01S5/20 , H01S5/34 , H01L21/18 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/026 , H01S5/2063 , H01S5/2068 , H01S5/3414
摘要： There is disclosed an improved method of manufacturing of an optical device (40), particularly semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and optical detectors. The invention provides a method of manufacturing optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum well (QW) structure (30), the method including the step of: processing the device body portion (15) so as to create extended defects at least in a portion (53) of the device portion (5). Each extended defect is a structural defect comprising a plurality of adjacent "point" defects.
摘要翻译：公开了一种改进的光学器件（40）的制造方法，特别是诸如激光二极管，光调制器，光放大器，光开关和光检测器之类的半导体光电器件。本发明提供一种制造光学装置（40）的方法，装置主体部分（15），其中将要制造装置（40）包括量子阱（QW）结构（30），该方法包括以下步骤：处理所述装置主体部分（15）以至少在所述装置部分（5）的一部分（53）中产生延伸的缺陷。每个延伸的缺陷是包括多个相邻“点”缺陷的结构缺陷。

4. 发明申请

WO2003023834A3 METHOD OF MANUFACTURING OPTICAL DEVICES AND RELATED IMPROVEMENTS 审中-公开
公开(公告)号：WO2003023834A3
公开(公告)日：2003-03-20
申请号：PCT/GB2002/003464
申请日：2002-07-30
申请人： THE UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW , INTENSE PHOTONICS LIMITED , MARSH, John, Haig , HAMILTON, Craig, James , KOWALSKI, Olek, Peter , MCDOUGALL, Stewart, Duncan , LIU, Xue, Feng , QIU, Bocang
发明人： MARSH, John, Haig , HAMILTON, Craig, James , KOWALSKI, Olek, Peter , MCDOUGALL, Stewart, Duncan , LIU, Xue, Feng , QIU, Bocang
IPC分类号： H01S5/34
摘要： There is disclosed an improved method of manufacturing an optical device using an impurity induced Quantum Well Intermixing (QWI) process. Reported QWI methods, and particularly Impurity Free Vacancy Diffusion (IFVD) methods, suffer from a number of disadvantages, eg the temperature at which Gallium Arsenide (GaAs) out-diffuses from the semiconductor material to the Silica (SiO 2 ) film. Accordingly, the present invention provides a method of manufacturing an optical device, a device body portion (5a) from which the device is to be made including at least one Quantum Well (QW) (10a), the method including the steps of: causing an impurity material to intermix with the at least one Quantum Well (QW) (10a), wherein the impurity material at least includes Copper (Cu).

5. 发明申请

WO03023834A2 METHOD OF MANUFACTURING OPTICAL DEVICES AND RELATED IMPROVEMENTS 审中-公开
标题翻译：制造光学器件的方法和相关改进
公开(公告)号：WO03023834A2
公开(公告)日：2003-03-20
申请号：PCT/GB0203464
申请日：2002-07-30
申请人： UNIV GLASGOW , INTENSE PHOTONICS LTD , MARSH JOHN HAIG , HAMILTON CRAIG JAMES , KOWALSKI OLEK PETER , MCDOUGALL STEWART DUNCAN , LIU XUE FENG , QIU BOCANG
发明人： MARSH JOHN HAIG , HAMILTON CRAIG JAMES , KOWALSKI OLEK PETER , MCDOUGALL STEWART DUNCAN , LIU XUE FENG , QIU BOCANG
IPC分类号： H01S5/323 , H01L21/18 , H01L25/00 , H01L31/18 , H01L33/06 , H01S5/34
CPC分类号： B82Y20/00 , H01L21/182 , H01S5/3413
摘要： There is disclosed an improved method of manufacturing an optical device using an impurity induced Quantum Well Intermixing (QWI) process. Reported QWI methods, and particularly Impurity Free Vacancy Diffusion (IFVD) methods, suffer from a number of disadvantages, eg the temperature at which Gallium Arsenide (GaAs) out-diffuses from the semiconductor material to the Silica (SiO>2
摘要翻译：公开了使用杂质诱导量子阱混合（QWI）工艺制造光学器件的改进方法。报告的QWI方法，特别是无杂质空闲扩散（IFVD）方法存在许多缺点，例如砷化镓（GaAs）从半导体材料扩散到二氧化硅（SiO 2）膜的温度。因此，本发明提供一种制造光学装置的方法，包括至少一个量子阱（QW）的装置主体部分（5a），所述装置主体部分（5a）包括以下步骤：引起与所述至少一个量子阱（QW）（10a）混合的杂质材料，其中所述杂质材料至少包括铜（Cu）。

6. 发明申请

WO2010029310A3 IMPROVEMENTS IN SEMICONDUCTOR LASERS 审中-公开
标题翻译：半导体激光器的改进
公开(公告)号：WO2010029310A3
公开(公告)日：2010-08-12
申请号：PCT/GB2009002187
申请日：2009-09-11
申请人： INTENSE LTD , MARSH JOHN HAIG , MCDOUGALL STEWART DUNCAN , BACCHIN GIANLUCA , QIU BOCANG
发明人： MARSH JOHN HAIG , MCDOUGALL STEWART DUNCAN , BACCHIN GIANLUCA , QIU BOCANG
IPC分类号： B41J2/45 , B41J2/47
CPC分类号： B41J2/451 , B41J2/473
摘要： An imaging device comprising a linear array (13) of laser diodes (16a-16f) that are adapted to provide an optical output comprising a plurality of spaced-apart optical beams (17a-17f). Focusing optics (18, 19) are configured to form a plurality of image points (7) from said spaced-apart optical beams, the image points being spaced apart along a first axis (7a). The image points have a non-uniform spacing (31, 41, 51, 52) along the first axis. By scanning the linear array along a photosensitive plate (5), and timing the firing of lasers accordingly, every pixel point on the photosensitive plate can be imaged by one of the image points from the laser array. Non-uniform spacing of the image points can provide advantages in heat dissipation from the laser elements, and reduction of some printing artifacts on the photosensitive plate.
摘要翻译：一种成像装置，包括激光二极管（16a-16f）的线性阵列（13），其适于提供包括多个间隔开的光束（17a-17f）的光输出。聚焦光学器件（18,19）被配置成从所述间隔开的光束形成多个图像点（7），图像点沿着第一轴线（7a）间隔开。图像点沿着第一轴具有不均匀的间隔（31,41,51,52）。通过沿着感光板（5）扫描线性阵列，并相应地激发激光的定时，感光板上的每个像素点可以通过激光阵列中的一个图像点成像。图像点的不均匀间隔可以提供来自激光元件的散热的优点，以及减少感光板上的一些印刷伪影。

7. 发明申请

WO2010029310A2 IMPROVEMENTS IN SEMICONDUCTOR LASERS 审中-公开
标题翻译：半导体激光器的改进
公开(公告)号：WO2010029310A2
公开(公告)日：2010-03-18
申请号：PCT/GB2009/002187
申请日：2009-09-11
申请人： INTENSE LIMITED , MARSH, John, Haig , McDOUGALL, Stewart, Duncan , BACCHIN, Gianluca , QIU, Bocang
发明人： MARSH, John, Haig , McDOUGALL, Stewart, Duncan , BACCHIN, Gianluca , QIU, Bocang
IPC分类号： B41J2/45
CPC分类号： B41J2/451 , B41J2/473
摘要： An imaging device comprising a linear array of laser diodes that are adapted to provide an optical output comprising a plurality of spaced-apart optical beams. Focusing optics are configured to form a plurality of image points from said spaced-apart optical beams, the image points being spaced apart along a first axis. The image points have a non¬ uniform spacing along the first axis. By scanning the linear array along a photosensitive plate, and timing the firing of lasers accordingly, every pixel point on the photosensitive plate can be imaged by one of the image points from the laser array. Non-uniform spacing of the image points can provide advantages in heat dissipation from the laser elements, and reduction of some printing artifacts on the photosensitive plate.
摘要翻译：一种成像装置，包括激光二极管的线性阵列，其适于提供包括多个间隔开的光束的光输出。聚焦光学器件被配置成从所述间隔开的光束形成多个图像点，图像点沿着第一轴线间隔开。图像点沿着第一轴具有非均匀的间距。通过沿着感光板扫描线性阵列，并相应地激发激光的定时，感光板上的每个像素点可以通过激光阵列中的一个图像点成像。图像点的不均匀间隔可以提供来自激光元件的散热的优点，以及减少感光板上的一些印刷伪影。

8. 发明申请

WO03100823A3 CONTROL OF CONTACT RESISTANCE IN QUANTUM WELL INTERMIXED DEVICES 审中-公开
标题翻译：量子阱介质中接触电阻的控制
公开(公告)号：WO03100823A3
公开(公告)日：2004-05-27
申请号：PCT/GB0302186
申请日：2003-05-21
申请人： INTENSE PHOTONICS LTD , NAJDA STEPHEN , MCDOUGALL STEWART DUNCAN , LIU XUEFENG
发明人： NAJDA STEPHEN , MCDOUGALL STEWART DUNCAN , LIU XUEFENG
IPC分类号： H01L21/00 , H01L21/18 , H01L33/00 , H01S5/34 , H01S5/343 , H01L21/285 , H01S5/02
CPC分类号： B82Y20/00 , H01L21/182 , H01L33/005 , H01S5/3414 , H01S5/343 , H01S5/34313
摘要： A method of performing quantum well intermixing in a semiconductor device structure uses a sacrificial part of a cap layer, that is removed after QWI processing, to restore the cap surface to a condition in which high performance contacts are still possible. The method includes: a) forming a layered quantum well structure including a doped cap layer; b) forming an etch stop layer over said cap layer; c) forming a sacrificial layer over said etch stop layer, said etch stop layer having a substantially lower etch rate than said sacrificial layer when exposed to predetermined etch conditions; d) carrying out a quantum well intermixing process on the device structure, which process induces significant damage to at least a portion of the sacrificial layer; e) removing the sacrificial layer in at least a contact region of the device using an etch procedure selective against the etch stop layer to expose said etch stop layer in the contact region; and f) forming a contact over the layered quantum well structure in at least said contact region.
摘要翻译：在半导体器件结构中执行量子阱混合的方法使用在QWI处理之后去除的帽层的牺牲部分，以将盖表面恢复到仍然可能存在高性能接触的状态。该方法包括：a）形成包括掺杂帽层的层状量子阱结构; b）在所述盖层上形成蚀刻停止层; c）在所述蚀刻停止层上形成牺牲层，当暴露于预定蚀刻条件时，所述蚀刻停止层具有比所述牺牲层显着更低的蚀刻速率; d）对器件结构进行量子阱混合过程，该过程对牺牲层的至少一部分引起显着的损伤; e）使用对所述蚀刻停止层选择性的蚀刻工艺在所述器件的至少接触区域中去除所述牺牲层，以暴露所述接触区域中的所述蚀刻停止层; 以及f）在至少所述接触区域中在层状量子阱结构上形成接触。

9. 发明申请

WO2003100823A2 CONTROL OF CONTACT RESISTANCE IN QUANTUM WELL INTERMIXED DEVICES 审中-公开
标题翻译：量子阱介质器件接触电阻的控制
公开(公告)号：WO2003100823A2
公开(公告)日：2003-12-04
申请号：PCT/GB2003/002186
申请日：2003-05-21
申请人： INTENSE PHOTONICS LIMITED , NAJDA, Stephen , McDOUGALL, Stewart, Duncan , LIU, Xuefeng
发明人： NAJDA, Stephen , McDOUGALL, Stewart, Duncan , LIU, Xuefeng
IPC分类号： H01L
CPC分类号： B82Y20/00 , H01L21/182 , H01L33/005 , H01S5/3414 , H01S5/343 , H01S5/34313
摘要： A method of performing quantum well intermixing in a semiconductor device structure uses a sacrificial part of a cap layer, that is removed after QWI processing, to restore the cap surface to a condition in which high performance contacts are still possible. The method includes: a) forming a layered quantum well structure including a doped cap layer; b) forming an etch stop layer over said cap layer; c) forming a sacrificial layer over said etch stop layer, said etch stop layer having a substantially lower etch rate than said sacrificial layer when exposed to predetermined etch conditions; d) carrying out a quantum well intermixing process on the device structure, which process induces significant damage to at least a portion of the sacrificial layer; e) removing the sacrificial layer in at least a contact region of the device using an etch procedure selective against the etch stop layer to expose said etch stop layer in the contact region; and f) forming a contact over the layered quantum well structure in at least said contact region.
摘要翻译：在半导体器件结构中进行量子阱混合的方法使用在QWI处理之后去除的覆盖层的牺牲部分，以将盖表面恢复到仍然可能存在高性能接触的状态。该方法包括：a）形成包括掺杂帽层的层状量子阱结构; b）在所述盖层上形成蚀刻停止层; c）在所述蚀刻停止层上形成牺牲层，当暴露于预定的蚀刻条件时，所述蚀刻停止层具有比所述牺牲层显着更低的蚀刻速率; d）在器件结构上执行量子阱混合过程，该过程对牺牲层的至少一部分引起显着的损伤; e）使用对所述蚀刻停止层选择性的蚀刻程序在所述器件的至少接触区域中去除所述牺牲层，以暴露所述接触区域中的所述蚀刻停止层; 以及f）在至少所述接触区域中在层状量子阱结构上形成接触。

10. 发明申请

WO2005062079A8 GENERATING MULTIPLE BANDGAPS USING MULTIPLE EPITAXIAL LAYERS 审中-公开
标题翻译：使用多个外延层产生多个带
公开(公告)号：WO2005062079A8
公开(公告)日：2005-10-06
申请号：PCT/GB2004005452
申请日：2004-12-24
申请人： INTENSE LTD , YANSON DAN ANDREYEVITCH , BACCHIN GIANLUCA , KOWALSKI OLEK PETER , MCDOUGALL STEWART DUNCAN
发明人： YANSON DAN ANDREYEVITCH , BACCHIN GIANLUCA , KOWALSKI OLEK PETER , MCDOUGALL STEWART DUNCAN
IPC分类号： H01L21/18 , H01S5/026
CPC分类号： H01L21/182
摘要： A quantum well intermixing (QWI) technique for modifying an energy bandgap during the formation of optical semiconductor devices enables spatial control of the QWI process so as to achieve differing bandgap shifts across a wafer, device or substrate surface. The method includes: forming a substrate comprising one or more core layers defining at least one quantum well; depositing a succession of intermixing barrier layers over the quantum well, each successive intermixing barrier layer being formed of a semiconductor material and having a different etch characteristic than an immediately preceding barrier layer; etching away different numbers of the successive barrier layers in different regions of the substrate so as to provide different total thicknesses of barrier layer in different regions of the substrate; and applying an intermixing agent to the surface of the substrate such that the degree of intermixing in the quantum well region varies as a function of the total thickness of barrier layer, thereby forming different bandgaps in the quantum well in each of the respective regions.
摘要翻译：用于在形成光学半导体器件期间修改能带隙的量子阱混合（QWI）技术能够对QWI工艺进行空间控制，以便实现晶片，器件或衬底表面上不同的带隙位移。该方法包括：形成包括限定至少一个量子阱的一个或多个核心层的衬底; 在量子阱上沉积一系列混合阻挡层，每个连续的混合阻挡层由半导体材料形成并且具有与之前紧邻的阻挡层不同的蚀刻特性; 在衬底的不同区域中蚀刻掉不同数量的连续阻挡层，以便在衬底的不同区域中提供不同数量的阻挡层的总厚度; 以及将混合剂施加到衬底的表面，使得量子阱区域中的混合程度作为阻挡层的总厚度的函数而变化，由此在各个区域中的每一个中的量子阱中形成不同的带隙。

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