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1. 发明申请

WO2013083838A1 SYSTEMS AND METHODS FOR CONTROLLING SURFACE PROFILES OF WAFERS SLICED IN A WIRE SAW 审中-公开
标题翻译：用于控制在线锯中切割的波形的表面轮廓的系统和方法
公开(公告)号：WO2013083838A1
公开(公告)日：2013-06-13
申请号：PCT/EP2012/074952
申请日：2012-12-10
申请人： MEMC ELECTRONIC MATERIALS S.P.A.
发明人： ZAVATTARI, Carlo , SEVERICO, Ferdinando , BHAGAVAT, Sumeet S. , VERCELLONI, Gabriele , VANDAMME, Roland R.
IPC分类号： B28D5/00 , B28D5/04
CPC分类号： B28D5/007 , B28D5/0064 , B28D5/0076 , B28D5/045
摘要： Systems and methods are disclosed for controlling the surface profiles of wafers cut in a wire saw machine. The systems and methods described herein are generally operable to alter the nanotopology of wafers sliced from an ingot (30) by controlling the shape of the wafers. The shape of the wafers is altered by changing the temperature and/or flow rate of a temperature-controlling fluid that comes in contact with the ingot (30). Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.
摘要翻译：公开了用于控制在线锯机中切割的晶片的表面轮廓的系统和方法。本文描述的系统和方法通常可操作以通过控制晶片的形状来改变从锭（30）切片的晶片的纳米拓扑学。通过改变与锭（30）接触的温度控制流体的温度和/或流速来改变晶片的形状。可以使用不同的反馈系统来确定产生具有期望形状和/或纳米拓扑的晶片所需的流体的温度。

2. 发明申请

WO2003072329A1 AUTOMATED CONTROL OF WAFER SLICING PROCESS 审中-公开
标题翻译：自动控制切片过程
公开(公告)号：WO2003072329A1
公开(公告)日：2003-09-04
申请号：PCT/IT2002/000126
申请日：2002-02-28
申请人： MEMC ELECTRONIC MATERIALS, S.P.A. , ZAVATTARI, Carlo , SEVERICO, Ferdinando
发明人： ZAVATTARI, Carlo , SEVERICO, Ferdinando
IPC分类号： B28D5/00
CPC分类号： B28D5/0064
摘要： A method and system for managing a sequence of processing operations performed at a plurality of stations for producing semiconductor wafers from silicon ingots. A server computer (10) stores processing information relating to one or more of the stations (70, 95, 120, 145, 170) and correlates the processing information to crystal information for a selected ingot. The crystal information indentifies the selected ingot (66) and relates to desired characteristics of wafers to be produced from the selected ingot. The crystal information is also correlated to the processing information based on location of the selected ingot in the sequence of processing operations performed by the stations. The server computer automatically initializes the processing operations performed by the stations based on the correlated crystal and processing information to produce the wafers substantially in accordance with the crystal information for the selected ingot.
摘要翻译：一种用于管理在多个站处执行的用于从硅锭制造半导体晶片的处理操作序列的方法和系统。服务器计算机（10）存储与一个或多个站（70,95,120,145,170）相关的处理信息，并将处理信息与选定的块的晶体信息相关联。晶体信息确定所选择的晶锭（66），并且涉及从所选锭生产的晶片的期望特性。晶体信息也与基于由站执行的处理操作的顺序的所选锭的位置相关联的处理信息。服务器计算机基于相关的晶体和处理信息自动初始化站点执行的处理操作，以基本上根据所选择的晶锭的晶体信息产生晶片。

3. 发明申请

WO1992009101A1 PROCESS FOR ACHIEVING CONTROLLED PRECIPITATION PROFILES IN SILICON WAFERS 审中-公开
标题翻译：在硅陶瓷中实现控制退化配置文件的过程
公开(公告)号：WO1992009101A1
公开(公告)日：1992-05-29
申请号：PCT/IT1991000095
申请日：1991-11-11
申请人： MEMC ELECTRONIC MATERIALS S.P.A. , FALSTER, Robert , FERRERO, Giancarlo , FISHER, Graham , OLMO, Massimiliano , PAGANI, Marco
发明人： MEMC ELECTRONIC MATERIALS S.P.A.
IPC分类号： H01L21/322
CPC分类号： H01L21/3225
摘要： The object of the invention is a process for the treatment of silicon wafers to achieve therein controlled precipitation profiles for the manufacture of electronic components, comprising the following fundamental operations: a) subjecting the wafers to a preliminary thermal treatment, at a temperature between 950 DEG C and 1150 DEG C, in particular at about 1100 DEG C, for a duration of about 15 minutes; b) after a standard chemical corrosion (etching) treatment, subjecting pairs of coupled wafers in a close reciprocal thermal contact to a rapid thermal annealing treatment, at a temperature between 1200 DEG C and 1275 DEG C for a duration of some tens of seconds; c) subjecting the wafers to a further extended thermal treatment at a temperature between 900 DEG C and 1000 DEG C, and, finally, d) extracting the wafers from the furnace and subjecting the surfaces that were in a close reciprocal contact during the rapid annealing treatment to a surface polishing. The resulting wafers have a profile of the density of the precipitates that presents a concentration peak in proximity to a surface (trapping zone) and a very low concentration plateau in proximity to the other surface (active zone).
摘要翻译：本发明的目的是一种用于处理硅晶片以在其中实现用于制造电子部件的受控沉淀曲线的方法，其包括以下基本操作：a）在950℃之间的温度下对晶片进行预热处理 C和1150℃，特别是约1100℃，持续约15分钟; b）在进行标准化学腐蚀（蚀刻）处理之后，在1200℃至1275℃的温度下，将几对耦合的晶片在紧密相互热接触下进行快速热退火处理，持续数十秒; c）在900℃至1000℃的温度下对晶片进行进一步的延伸热处理，最后，d）从炉中提取晶片并在快速退火期间使彼此紧密相互接触的表面经受处理到表面抛光。所得到的晶片具有在表面（捕获区域）附近呈现浓度峰值和在另一表面（活性区域）附近的非常低的浓度平台的沉淀物的密度分布。

4. 发明申请

WO2014141309A1 GAS DOPING SYSTEMS FOR CONTROLLED DOPING OF A MELT OF SEMICONDUCTOR OR SOLAR-GRADE MATERIAL 审中-公开
标题翻译：用于半导体或太阳能材料熔体的控制排气的气体掺杂系统
公开(公告)号：WO2014141309A1
公开(公告)日：2014-09-18
申请号：PCT/IT2013/000077
申请日：2013-03-15
申请人： MEMC ELECTRONIC MATERIALS S.P.A.
发明人： HARINGER, Stephan , SCALA, Roberto , D´ANGELLA, Marco
IPC分类号： C30B15/04
CPC分类号： C30B15/04 , C30B15/10 , C30B29/06
摘要： A crystal pulling apparatus for producing an ingot is provided. The apparatus includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt. The gas doping system includes a feeding tube, an evaporation receptacle, and a fluid flow restrictor. The feeding tube is positioned within the furnace, and includes at least one feeding tube sidewall, a first end through which a solid dopant is introduced into the feeding tube, and an opening opposite the first end through which a gaseous dopant is introduced into the furnace. The evaporation receptacle is configured to vaporize the dopant therein, and is disposed near the opening of the feeding tube. The fluid flow restrictor is configured to permit the passage of solid dopant therethrough and restrict the flow of gaseous dopant therethrough, and is disposed within the feeding tube between the first end and the evaporation receptacle.
摘要翻译：提供了一种用于生产锭的晶体拉制装置。该装置包括炉和气体掺杂系统。炉子包括用于保持熔体的坩埚。气体掺杂系统包括进料管，蒸发容器和流体限流器。进料管位于炉内，并且包括至少一个进料管侧壁，固体掺杂剂通过其引入进料管的第一端和与第一端相对的开口，气态掺杂剂通过该开口引入炉中。蒸发容器构造成使其中的掺杂剂蒸发，并且设置在进料管的开口附近。流体限流器构造成允许固体掺杂剂通过，并限制气态掺杂剂的流过，并且设置在第一端和蒸发容器之间的进料管内。

5. 发明申请

WO2014106080A1 FABRICATION OF INDIUM-DOPED SILICON BY THE CZOCHRALSKI METHOD 审中-公开
标题翻译：通过CZOCHRALSKI方法制造印刷硅的方法
公开(公告)号：WO2014106080A1
公开(公告)日：2014-07-03
申请号：PCT/US2013/078046
申请日：2013-12-27
申请人： MEMC ELECTRONIC MATERIALS S.P.A. , APPEL, Jesse, Samsonov
发明人： APPEL, Jesse, Samsonov , SCALA, Roberto , BONANNO, Luigi , HARINGER, Stephan , GIANNATTASIO, Armando , MOSER, Valentino , BINNS, Martin, Jeffrey
IPC分类号： C30B15/04 , C30B29/06 , C30B15/20
CPC分类号： C30B15/04 , C30B15/20 , C30B29/06 , H01L31/02363 , H01L31/028 , H01L31/0288 , H01L31/036
摘要： A method of growing a monocrystalline silicon ingot is described. The method includes the steps of providing a monocrystalline ingot growing apparatus including a chamber having an internal pressure, and a crucible disposed within the chamber, preparing a silicon melt in the crucible, introducing an inert gas into the chamber from a gas inlet above the silicon melt, wherein the inert gas flows over the surface of the silicon melt and has a flow rate, introducing a volatile dopant including indium into the silicon melt, growing an indium-doped monocrystalline silicon ingot, and controlling the indium dopant concentration in the ingot by adjusting the ratio of the inert gas flow rate and the internal pressure of the chamber.
摘要翻译：描述了生长单晶硅锭的方法。该方法包括提供包括具有内部压力的室的单晶锭生长装置和设置在室内的坩埚，在坩埚中制备硅熔体，将惰性气体从硅上方的气体入口引入室中熔融，其中惰性气体流过硅熔体的表面，并具有流速，将包含铟的挥发性掺杂物引入到硅熔体中，生长铟掺杂的单晶硅锭，并通过以下步骤控制锭中的铟掺杂剂浓度调节惰性气体流量与室内压力之比。

6. 发明申请

WO2014102387A1 LIQUID DOPING SYSTEMS AND METHODS FOR CONTROLLED DOPING OF SINGLE CRYSTAL SEMICONDUCTOR MATERIAL 审中-公开
标题翻译：用于单晶硅半导体材料的控制掺杂的液体掺杂系统和方法
公开(公告)号：WO2014102387A1
公开(公告)日：2014-07-03
申请号：PCT/EP2013/078163
申请日：2013-12-31
申请人： MEMC ELECTRONIC MATERIALS S.P.A.
发明人： HARINGER, Stephan , GIANNATTASIO, Armando , SCALA, Roberto , BONANNO, Luigi , MOSER, Valentino
IPC分类号： C30B15/04 , C30B29/06
CPC分类号： C30B15/04 , C30B29/06 , Y10T117/1056
摘要： A doping system for introducing liquid dopant into a melt of semiconductor or solar-grade material includes a dopant reservoir for holding dopant and a feeding tube. The dopant reservoir includes a body and a tapered end defining an opening having a smaller cross-sectional area than a cross- sectional area of the body. The feeding tube includes a first end extending from the opening of the reservoir, a second end distal from the first end, an angled tip disposed at the second end of the feeding tube, a first restriction for inhibiting the passage of solid dopant through the feeding tube, and a second restriction for controlling the flow of liquid dopant, the second restriction disposed near the second end of the feeding tube.
摘要翻译：用于将液体掺杂剂引入半导体或太阳能级材料的熔体中的掺杂系统包括用于保持掺杂剂的掺杂剂储存器和进料管。掺杂剂储存器包括主体和限定具有比主体的横截面面积小的横截面面积的开口的锥形端。进料管包括从储存器的开口延伸的第一端，远离第一端的第二端，设置在进料管的第二端的成角度的尖端，用于抑制固体掺杂剂通过进料的第一限制管，以及用于控制液体掺杂剂流动的第二限制，第二限制设置在供给管的第二端附近。

7. 发明申请

WO2013010943A1 SAW FOR CUTTING SILICON INTO SEED RODS FOR USE IN A CHEMICAL VAPOR DEPOSITION POLYSILICON REACTOR 审中-公开
标题翻译：用于将硅切割成用于化学气相沉积多晶硅反应器的种子锯的SAW
公开(公告)号：WO2013010943A1
公开(公告)日：2013-01-24
申请号：PCT/EP2012/063799
申请日：2012-07-13
申请人： MEMC ELECTRONIC MATERIALS S.P.A. , BOVO, Rodolfo , MOLINO, Paolo
发明人： BOVO, Rodolfo , MOLINO, Paolo
IPC分类号： B28D5/02
CPC分类号： B28D5/023 , B28D5/024 , B28D5/029
摘要： Saw for cutting silicon into seed rods for use in a chemical vapor deposition polysilicon reactor Systems and methods are provided for cutting silicon into seed rods for use in a chemical vapor deposition polysilicon reactor. A method includes cutting the silicon ingot with saw blades into silicon slabs, rotating the silicon slabs, and cutting the silicon slabs into smaller-sized silicon seed rods for use in the chemical vapor deposition polysilicon reactor.
摘要翻译：用于将硅切割成用于化学气相沉积多晶硅反应器的种子棒的锯提供用于将硅切割成种子棒以用于化学气相沉积多晶硅反应器的系统和方法。一种方法包括将具有锯片的硅锭切割成硅板，旋转硅片，以及将硅片切割成用于化学气相沉积多晶硅反应器的较小尺寸的硅种子棒。

8. 发明申请

WO2013001068A1 CLEANING TOOL FOR POLYSILICON REACTOR 审中-公开
标题翻译：多晶硅反应器清洁工具
公开(公告)号：WO2013001068A1
公开(公告)日：2013-01-03
申请号：PCT/EP2012/062720
申请日：2012-06-29
申请人： MEMC ELECTRONIC MATERIALS S.p.A. , BOVIO, Ezio , MOLINO, Paolo , GAVA, Diego
发明人： BOVIO, Ezio , MOLINO, Paolo , GAVA, Diego
IPC分类号： B08B9/08
CPC分类号： C23C16/4407 , B08B9/08
摘要： Systems and methods are provided for cleaning an interior surface of a chemical vapor deposition reactor bell used in the production of polysilicon. In one method, the reactor bell is positioned atop a frame; a first actuator is operated such that the brush engages the interior surface of the reactor bell. A flow of liquid is directed from a nozzle against the interior surface of the reactor bell, and a second actuator is operated to rotate the brush.
摘要翻译：提供了系统和方法来清洁用于生产多晶硅的化学气相沉积反应器钟的内表面。在一种方法中，反应器钟位于框架顶部; 操作第一致动器使得电刷接合反应器钟的内表面。液体的流动从喷嘴引导到反应器钟的内表面，并且操作第二致动器以使刷旋转。

9. 发明申请

WO2014195980A1 DOPANT FEEDING DEVICE FOR DISPENSING DOPANT 审中-公开
标题翻译：用于分配勺子的饵料送料装置
公开(公告)号：WO2014195980A1
公开(公告)日：2014-12-11
申请号：PCT/IT2013/000161
申请日：2013-06-07
申请人： MEMC ELECTRONIC MATERIALS S.P.A.
发明人： DELL'AMICO, Gianni , DELPERO, Ugo , MODA´, Mauro , HARINGER, Stephan
IPC分类号： C30B15/02
CPC分类号： C30B15/04 , C30B15/002 , C30B15/02 , C30B15/20 , C30B29/06
摘要： A dopant feeding device for releasing dopant into a feeder system during doping of a crystal growing system includes a dopant container for holding the dopant, a lower valve, and an upper valve. The dopant container includes a wall defining a lower opening for releasing the dopant therethrough. The lower valve is positioned adjacent to the lower opening and is movable between a closed position that is in contact with the wall to prevent passage of dopant through the lower opening and an open position that is spaced from the lower opening to allow passage of dopant therethrough. The upper valve is positioned above and connected to the lower valve. The upper valve is disposed within the dopant container and is movable between a first position that is spaced from the dopant container and a second position that is in contact with the dopant container.
摘要翻译：在掺杂晶体生长系统期间用于将掺杂剂释放到馈电系统中的掺杂剂馈送装置包括用于保持掺杂剂的掺杂剂容器，下阀和上阀。掺杂剂容器包括限定用于释放掺杂剂的下部开口的壁。下阀定位成与下开口相邻并且可在与壁接触的关闭位置之间移动，以防止掺杂剂通过下开口的通过，以及与下开口间隔开以允许掺杂剂通过的打开位置。上阀门位于下阀门上方并连接到下阀门。上阀设置在掺杂剂容器内并可在与掺杂剂容器间隔开的第一位置和与掺杂剂容器接触的第二位置之间移动。

10. 发明申请

WO2013079683A1 SYSTEMS AND METHODS FOR CONTROLLING SURFACE PROFILES OF WAFERS SLICED IN A WIRE SAW 审中-公开
标题翻译：用于控制在线锯中切割的波形的表面轮廓的系统和方法
公开(公告)号：WO2013079683A1
公开(公告)日：2013-06-06
申请号：PCT/EP2012/074132
申请日：2012-11-30
申请人： MEMC ELECTRONIC MATERIALS S.P.A.
发明人： ZAVATTARI, Carlo , SEVERICO, Fernando , BHAGAVAT, Sumeet S. , VERCELLONI, Gabriele , VANDAMME, Roland R.
IPC分类号： B28D5/00
CPC分类号： B28D5/0076 , B28D5/0064
摘要： Systems (100) and methods are disclosed for controlling the surface profiles of wafers cut in a wire saw machine (103). The systems and methods described herein are generally operable to alter the nanotopology of wafers sliced from an ingot (102) by controlling the shape of the wafers. The shape of the wafers is altered by changing the temperature and/or flow rate of a temperature-controlling fluid circulated in fluid communication with bearings (114) supporting wire guides (106) of the saw. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.
摘要翻译：公开了用于控制在线锯机（103）中切割的晶片的表面轮廓的系统（100）和方法。本文所述的系统和方法通常可操作以通过控制晶片的形状来改变从锭（102）切片的晶片的纳米拓扑。通过改变与支撑导线器（106）的轴承（114）流体连通的温度控制流体的温度和/或流速来改变晶片的形状。可以使用不同的反馈系统来确定产生具有期望形状和/或纳米拓扑的晶片所需的流体的温度。

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