专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2014141309A1 GAS DOPING SYSTEMS FOR CONTROLLED DOPING OF A MELT OF SEMICONDUCTOR OR SOLAR-GRADE MATERIAL 审中-公开
标题翻译：用于半导体或太阳能材料熔体的控制排气的气体掺杂系统
公开(公告)号：WO2014141309A1
公开(公告)日：2014-09-18
申请号：PCT/IT2013/000077
申请日：2013-03-15
申请人： MEMC ELECTRONIC MATERIALS S.P.A.
发明人： HARINGER, Stephan , SCALA, Roberto , D´ANGELLA, Marco
IPC分类号： C30B15/04
CPC分类号： C30B15/04 , C30B15/10 , C30B29/06
摘要： A crystal pulling apparatus for producing an ingot is provided. The apparatus includes a furnace and a gas doping system. The furnace includes a crucible for holding a melt. The gas doping system includes a feeding tube, an evaporation receptacle, and a fluid flow restrictor. The feeding tube is positioned within the furnace, and includes at least one feeding tube sidewall, a first end through which a solid dopant is introduced into the feeding tube, and an opening opposite the first end through which a gaseous dopant is introduced into the furnace. The evaporation receptacle is configured to vaporize the dopant therein, and is disposed near the opening of the feeding tube. The fluid flow restrictor is configured to permit the passage of solid dopant therethrough and restrict the flow of gaseous dopant therethrough, and is disposed within the feeding tube between the first end and the evaporation receptacle.
摘要翻译：提供了一种用于生产锭的晶体拉制装置。该装置包括炉和气体掺杂系统。炉子包括用于保持熔体的坩埚。气体掺杂系统包括进料管，蒸发容器和流体限流器。进料管位于炉内，并且包括至少一个进料管侧壁，固体掺杂剂通过其引入进料管的第一端和与第一端相对的开口，气态掺杂剂通过该开口引入炉中。蒸发容器构造成使其中的掺杂剂蒸发，并且设置在进料管的开口附近。流体限流器构造成允许固体掺杂剂通过，并限制气态掺杂剂的流过，并且设置在第一端和蒸发容器之间的进料管内。

IPRDB

热门服务

关于我们

友情链接

联系方式