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1. 发明申请

WO2005091974A3 METHODS FOR THE OPTIMIZATION OF SUBSTRATE ETCHING IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：在等离子体处理系统中优化基板蚀刻的方法
公开(公告)号：WO2005091974A3
公开(公告)日：2006-09-21
申请号：PCT/US2005007886
申请日：2005-03-09
申请人： LAM RES CORP , KIM JISOO , WORSHAM BINET , YEN BI-MING , LOEWENHARDT PETER K
发明人： KIM JISOO , WORSHAM BINET , YEN BI-MING , LOEWENHARDT PETER K
IPC分类号： C23F1/00 , B44C1/22 , C03C15/00 , H01L21/302 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/76811 , H01L21/76813
摘要： A method of etching a substrate in a plasma processing system is disclosed. The substrate has a semi-conductor layer, a first barrier layer disposed above the semi-conductor layer, a low-k layer disposed above the first barrier layer, a third hard mask layer disposed above the low-k layer; a second hard mask layer disposed above the third hard mask layer, and a first hard mask layer disposed above the second hard mask layer. The method includes alternatively etching the substrate with a first etchant and a second etchant, wherein the first etchant has a low selectivity to a first hard mask material of the first hard mask layer, a third hard mask material of the a third hard mask layer, and a first barrier layer material of the first barrier layer, but a high selectivity to a second hard mask material of the second hard mask layer; and wherein the second etchant has a high selectivity to the first hard mask material of the first hard mask layer, the third hard mask material of the third hard mask layer, and the first barrier layer material of the first barrier layer, and the first etchant has a low selectivity to the second hard mask material of the second hard mask layer.
摘要翻译：公开了一种在等离子体处理系统中蚀刻衬底的方法。衬底具有半导体层，设置在半导体层上方的第一势垒层，设置在第一阻挡层上方的低k层，设置在低k层上方的第三硬掩模层; 设置在第三硬掩模层之上的第二硬掩模层，以及设置在第二硬掩模层上方的第一硬掩模层。所述方法包括用第一蚀刻剂和第二蚀刻剂替代地蚀刻所述衬底，其中所述第一蚀刻剂对所述第一硬掩模层的第一硬掩模材料具有低选择性，所述第三硬掩模层的第三硬掩模材料，和第一阻挡层的第一阻挡层材料，但对第二硬掩模层的第二硬掩模材料具有高选择性; 并且其中第二蚀刻剂对第一硬掩模层的第一硬掩模材料，第三硬掩模层的第三硬掩模材料和第一阻挡层的第一阻挡层材料和第一蚀刻剂具有高选择性对第二硬掩模层的第二硬掩模材料具有低选择性。

2. 发明申请

WO2005091974A9 METHODS FOR THE OPTIMIZATION OF SUBSTRATE ETCHING IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：在等离子体处理系统中优化基板蚀刻的方法
公开(公告)号：WO2005091974A9
公开(公告)日：2005-11-24
申请号：PCT/US2005007886
申请日：2005-03-09
申请人： LAM RES CORP , KIM JISOO , WORSHAM BINET , YEN BI-MING , LOEWENHARDT PETER K
发明人： KIM JISOO , WORSHAM BINET , YEN BI-MING , LOEWENHARDT PETER K
IPC分类号： B44C1/22 , C03C15/00 , C23F1/00 , H01L21/302 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31144 , H01L21/76811 , H01L21/76813
摘要： A method of etching a substrate in a plasma processing system is disclosed. The substrate has a semi-conductor layer, a first barrier layer disposed above the semi-conductor layer, a low-k layer disposed above the first barrier layer, a third hard mask layer disposed above the low-k layer; a second hard mask layer disposed above the third hard mask layer, and a first hard mask layer disposed above the second hard mask layer. The method includes alternatively etching the substrate with a first etchant and a second etchant, wherein the first etchant has a low selectivity to a first hard mask material of the first hard mask layer, a third hard mask material of the a third hard mask layer, and a first barrier layer material of the first barrier layer, but a high selectivity to a second hard mask material of the second hard mask layer; and wherein the second etchant has a high selectivity to the first hard mask material of the first hard mask layer, the third hard mask material of the third hard mask layer, and the first barrier layer material of the first barrier layer, and the first etchant has a low selectivity to the second hard mask material of the second hard mask layer.
摘要翻译：公开了一种在等离子体处理系统中蚀刻衬底的方法。衬底具有半导体层，设置在半导体层上方的第一势垒层，设置在第一阻挡层上方的低k层，设置在低k层上方的第三硬掩模层; 设置在第三硬掩模层之上的第二硬掩模层，以及设置在第二硬掩模层上方的第一硬掩模层。所述方法包括用第一蚀刻剂和第二蚀刻剂替代地蚀刻所述衬底，其中所述第一蚀刻剂对所述第一硬掩模层的第一硬掩模材料具有低选择性，所述第三硬掩模层的第三硬掩模材料，和第一阻挡层的第一阻挡层材料，但对第二硬掩模层的第二硬掩模材料具有高选择性; 并且其中第二蚀刻剂对第一硬掩模层的第一硬掩模材料，第三硬掩模层的第三硬掩模材料和第一阻挡层的第一阻挡层材料和第一蚀刻剂具有高选择性对第二硬掩模层的第二硬掩模材料具有低选择性。

3. 发明申请

WO2008147756A4 IN-SITU PHOTORESIST STRIP DURING PLASMA ETCHING OF ACTIVE HARD MASK 审中-公开
标题翻译：活性硬掩模等离子刻蚀中的原位光刻条
公开(公告)号：WO2008147756A4
公开(公告)日：2009-07-09
申请号：PCT/US2008064159
申请日：2008-05-19
申请人： LAM RES CORP , CHO SANGJUN , CHOI TOM , HAN TAEJOON , KANG SEAN , GOPALADASU PRABHAKARA , YEN BI-MING
发明人： CHO SANGJUN , CHOI TOM , HAN TAEJOON , KANG SEAN , GOPALADASU PRABHAKARA , YEN BI-MING
IPC分类号： H01L21/3065 , H01L21/027
CPC分类号： H01L21/3081 , G03F7/427 , H01L21/31138 , H01L21/32139
摘要： A method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A photoresist layer is formed over the hard mask layer. The hard mask layer is opened. The photoresist layer is stripped by providing a stripping gas; forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and stopping the stripping gas when the photoresist layer is stripped. The opening the hard mask layer and the stripping the photoresist layer are performed in a same chamber.
摘要翻译：提供了一种用于蚀刻硅层中的特征的方法。在硅层上形成硬掩模层。在硬掩模层上形成光致抗蚀剂层。硬掩模层被打开。通过提供汽提气体来剥离光致抗蚀剂层; 通过提供高频RF功率和低频RF功率形成具有剥离气体的等离子体，其中低频RF功率具有小于50瓦的功率; 并且当光致抗蚀剂层被剥离时停止剥离气体。在同一腔室中进行硬掩模层的开口和光刻胶层的剥离。

4. 发明申请

WO2004055855B1 GAS DISTRIBUTION APPARATUS AND METHOD FOR UNIFORM ETCHING 审中-公开
标题翻译：气体分配装置和均匀蚀刻方法
公开(公告)号：WO2004055855B1
公开(公告)日：2005-03-17
申请号：PCT/US0338617
申请日：2003-12-04
申请人： LAM RES CORP , LARSON DEAN J , KADKHODAYAN BABAK , WU DI , TAKESHITA KENJI , YEN BI-MING , SU XINGCAI , DENTY WILLIAM M JR , LOEWENHARDT PETER
发明人： LARSON DEAN J , KADKHODAYAN BABAK , WU DI , TAKESHITA KENJI , YEN BI-MING , SU XINGCAI , DENTY WILLIAM M JR , LOEWENHARDT PETER
IPC分类号： C23F1/00 , G05D7/06 , H01J37/00 , H01J37/32 , H01L21/306 , H01L21/311
CPC分类号： G05D7/0664 , H01J37/3244 , H01L21/31116
摘要： An apparatus for providing different gases to different zones of a processing chamber comprises a gas supply (1880) for providing an etching gas flow; a flow splitter (1831, 1836 - 1840) in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs (1812, 1814, 1833, 1834) and a tuning gas system (1860- 1862, 1865 - 1868) in fluid connection to at least one of the legs of the plurality of legs (1812, 1814).
摘要翻译：用于向处理室的不同区域提供不同气体的装置包括用于提供蚀刻气体流的气体供应装置（1880）与气体供应流体连接的分流器（1831,1836-1840），用于将来自气体供应源的蚀刻气流分成多个支路（1812,1814,1833,1834）和调谐气体系统（1860-1862），1865至1868）流体连接至所述多个腿（1812,1814）中的至少一个腿。

5. 发明申请

WO2010117964A3 METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE 审中-公开
标题翻译：具有减少损坏的低K电介质蚀刻方法
公开(公告)号：WO2010117964A3
公开(公告)日：2011-01-13
申请号：PCT/US2010030008
申请日：2010-04-05
申请人： LAM RES CORP , JI BING , TAKESHITA KENJI , BAILEY ANDREW D III , HUDSON ERIC A , MORAVEJ MARYAM , SIRARD STEPHEN M , KO JUNGMIN , LE DANIEL , HEFTY ROBERT C , CHENG YU , DELGADINO GERARDO A , YEN BI-MING
发明人： JI BING , TAKESHITA KENJI , BAILEY ANDREW D III , HUDSON ERIC A , MORAVEJ MARYAM , SIRARD STEPHEN M , KO JUNGMIN , LE DANIEL , HEFTY ROBERT C , CHENG YU , DELGADINO GERARDO A , YEN BI-MING
IPC分类号： H01L21/3065 , H05H1/34
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/31138
摘要： A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.
摘要翻译：通过本发明的实施例提供了一种用于蚀刻位于有机掩模下方的低k电介质层中的特征的方法。通过有机掩模将特征蚀刻到低k电介质层中。在低k电介质层上沉积氟碳层。氟碳层被固化。剥去有机面膜。

6. 发明申请

WO2008147756A3 IN-SITU PHOTORESIST STRIP DURING PLASMA ETCHING OF ACTIVE HARD MASK 审中-公开
标题翻译：活动硬掩模等离子体蚀刻中的现场光电子条纹
公开(公告)号：WO2008147756A3
公开(公告)日：2009-01-29
申请号：PCT/US2008064159
申请日：2008-05-19
申请人： LAM RES CORP , CHO SANGJUN , CHOI TOM , HAN TAEJOON , KANG SEAN , GOPALADASU PRABHAKARA , YEN BI-MING
发明人： CHO SANGJUN , CHOI TOM , HAN TAEJOON , KANG SEAN , GOPALADASU PRABHAKARA , YEN BI-MING
IPC分类号： H01L21/3065 , H01L21/027
CPC分类号： H01L21/3081 , G03F7/427 , H01L21/31138 , H01L21/32139
摘要： A method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A photoresist layer is formed over the hard mask layer. The hard mask layer is opened. The photoresist layer is stripped by providing a stripping gas; forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and stopping the stripping gas when the photoresist layer is stripped. The opening the hard mask layer and the stripping the photoresist layer are performed in a same chamber.
摘要翻译：提供了一种用于蚀刻硅层中的特征的方法。在硅层上形成硬掩模层。在硬掩模层上形成光致抗蚀剂层。打开硬掩模层。通过提供剥离气体来剥离光致抗蚀剂层; 通过提供高频RF功率和低频RF功率与剥离气体形成等离子体，其中低频RF功率具有小于50瓦的功率; 并且当剥离光致抗蚀剂层时停止剥离气体。打开硬掩模层和剥离光致抗蚀剂层在相同的室中进行。

7. 发明申请

WO2004055855A3 GAS DISTRIBUTION APPARATUS AND METHOD FOR UNIFORM ETCHING 审中-公开
标题翻译：气体分布装置和均匀蚀刻的方法
公开(公告)号：WO2004055855A3
公开(公告)日：2005-01-06
申请号：PCT/US0338617
申请日：2003-12-04
申请人： LAM RES CORP , LARSON DEAN J , KADKHODAYAN BABAK , WU DI , TAKESHITA KENJI , YEN BI-MING , SU XINGCAI , DENTY WILLIAM M JR , LOEWENHARDT PETER
发明人： LARSON DEAN J , KADKHODAYAN BABAK , WU DI , TAKESHITA KENJI , YEN BI-MING , SU XINGCAI , DENTY WILLIAM M JR , LOEWENHARDT PETER
IPC分类号： C23F1/00 , G05D7/06 , H01J37/00 , H01J37/32 , H01L21/306 , H01L21/311
CPC分类号： G05D7/0664 , H01J37/3244 , H01L21/31116
摘要： An apparatus for providing different gases to different zones of a processing chamber comprises a gas supply (1880) for providing an etching gas flow; a flow splitter (1831, 1836 - 1840) in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs (1812, 1814, 1833, 1834) and a tuning gas system (1860- 1862, 1865 - 1868) in fluid connection to at least one of the legs of the plurality of legs (1812, 1814).
摘要翻译：用于向处理室的不同区域提供不同气体的装置包括用于提供蚀刻气体流的气体供应源（1880）与气体供应流体连接的分流器（1831,1836-1840），用于将来自气体供应的蚀刻气体流分解成多个腿部（1812,1814,1833,1834）和调节气体系统（1860-1862），1865-1868）与所述多个腿部（1812,1814）中的至少一个腿流体连接。

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