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    • 2. 发明申请
    • LEVEL SHIFTER HAVING LOW DUTY CYCLE DISTORTION
    • 具有低占空比的水平变换器
    • WO2009003068A1
    • 2008-12-31
    • PCT/US2008/068247
    • 2008-06-25
    • QUALCOMM IncorporatedLEE, Chulkyu
    • LEE, Chulkyu
    • H03K3/356
    • H03K3/356113
    • A level shifter (100) includes an inverting circuit (104), a cross-coupled level shifting latch (102), and a SR logic gate latch (103). The first and second outputs of the level shifting latch are coupled to the set (S) and reset (R) inputs of the SR latch. The inverting circuit, that is powered by a first supply voltage VDDL, supplies a noninverted version of an input signal (IND) onto a first input of the level shifting latch (112) and supplies an inverted version of the input signal (INB) onto a second input of the level shifting latch (113). A low-to-high transition of the input signal resets the SR latch, whereas a high-to-low transition sets the SR latch. Duty cycle distortion skew of the level shifter is less than fifty picoseconds over voltage, process and temperature corners, and the level shifter has a supply voltage margin of more than one quarter of a nominal value of VDDL.
    • 电平移位器(100)包括反相电路(104),交叉耦合电平移位锁存器(102)和SR逻辑门锁存器(103)。 电平移位锁存器的第一和第二输出耦合到SR锁存器的组(S)和复位(R)输入端。 由第一电源电压VDDL供电的反相电路将输入信号(IND)的非反相版本提供到电平移位锁存器(112)的第一输入端,并将输入信号(INB)的反相版本提供到 电平移位锁存器(113)的第二输入端。 输入信号的低电平到高电平跳变使SR锁存器复位,而高电平至低电平转换则设置SR锁存器。 电平转换器的占空比失真偏移在电压,过程和温度转角上小于50皮秒,电平转换器的电源电压裕度大于VDDL额定值的四分之一。