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1. 发明申请

WO2013059591A1 APPARATUS AND METHOD FOR PROVIDING UNIFORM FLOW OF GAS 审中-公开
标题翻译：用于提供气体均匀流量的装置和方法
公开(公告)号：WO2013059591A1
公开(公告)日：2013-04-25
申请号：PCT/US2012/061022
申请日：2012-10-19
申请人： APPLIED MATERIALS, INC. , YUDOVSKY, Joseph , CHANG, Mei , GUNGOR, Faruk , MA, Paul F. , CHU, David , KAO, Chien-Teh , LAM, Hyman , WU, Dien-Yeh
发明人： YUDOVSKY, Joseph , CHANG, Mei , GUNGOR, Faruk , MA, Paul F. , CHU, David , KAO, Chien-Teh , LAM, Hyman , WU, Dien-Yeh
IPC分类号： H01L21/205
CPC分类号： F17D3/00 , Y10T137/7833
摘要： Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.
摘要翻译：提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。入口端可连接到入口气体源，出口端可与真空源连接。还提供了具有螺旋输送通道的气体分配设备，缠绕的螺旋输送通道，分离输送通道，合流输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。

2. 发明申请

WO2010059868A2 METHOD AND APPARATUS FOR TRENCH AND VIA PROFILE MODIFICATION 审中-公开
标题翻译：用于打印和通过轮廓修改的方法和设备
公开(公告)号：WO2010059868A2
公开(公告)日：2010-05-27
申请号：PCT/US2009065208
申请日：2009-11-19
申请人： APPLIED MATERIALS INC , CHANG MEI , KAO CHIEN-TEH , LU XIN LIANG , GE ZHENBIN
发明人： CHANG MEI , KAO CHIEN-TEH , LU XIN LIANG , GE ZHENBIN
IPC分类号： H01L21/28 , H01L21/336
CPC分类号： H01J37/3244 , H01L21/3065 , H01L21/31116 , H01L21/76843 , H01L21/76865 , H01L21/76877 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683 , H01L2221/1063
摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to methods and apparatus for trench and via profile modification prior to filling the trench and via. One embodiment of the present invention comprises forming a sacrifice layer to pinch off a top opening of a trench structure by exposing the trench structure to an etchant. In one embodiment, the etchant is configured to remove the first material by reacting with the first material and generating a by-product, which forms the sacrifice layer.
摘要翻译：本发明的实施例总体上涉及用于处理半导体衬底的设备和方法。特别地，本发明的实施例涉及在填充沟槽和通孔之前用于沟槽和通孔轮廓修改的方法和设备。本发明的一个实施例包括通过将沟槽结构暴露于蚀刻剂来形成牺牲层以夹断沟槽结构的顶部开口。在一个实施例中，蚀刻剂被配置成通过与第一材料反应并产生形成牺牲层的副产物来去除第一材料。

3. 发明申请

WO2010042552A3 SELECTIVE ETCHING OF SILICON NITRIDE 审中-公开
公开(公告)号：WO2010042552A3
公开(公告)日：2010-04-15
申请号：PCT/US2009/059743
申请日：2009-10-06
申请人： APPLIED MATERIALS, INC. , LU, Xinliang , YANG, Haichun , GE, Zhenbin , LU, Nan , OR, David T. , KAO, Chien-Teh , CHANG, Mei
发明人： LU, Xinliang , YANG, Haichun , GE, Zhenbin , LU, Nan , OR, David T. , KAO, Chien-Teh , CHANG, Mei
IPC分类号： H01L21/3065
摘要： Methods for etching dielectric layers comprising silicon and nitrogen are provided herein. In some embodiments, such methods may include providing a substrate having a dielectric layer comprising silicon and nitrogen disposed thereon, forming reactive species from a process gas comprising hydrogen (H2) and nitrogen trifluoride (NF3) using a remote plasma; and etching the dielectric layer using the reactive species. In some embodiments, an oxide layer is disposed adjacent to the dielectric layer. In some embodiments, the flow rate ratio of the process gas can be adjusted such that an etch selectivity of the dielectric layer to at least one of the oxide layer or the substrate is between about 0.8 to about 4.

4. 发明申请

WO2007011568A3 CONTACT CLEAN BY REMOTE PLASMA AND REPAIR OF SILICIDE SURFACE 审中-公开
标题翻译：通过远程等离子体清洁和清洁硅胶表面
公开(公告)号：WO2007011568A3
公开(公告)日：2008-01-10
申请号：PCT/US2006026719
申请日：2006-07-10
申请人： APPLIED MATERIALS INC , LU XINLIANG , KAO CHIEN-TEH , LAI CHIUKIN STEVE , CHANG MEI
发明人： LU XINLIANG , KAO CHIEN-TEH , LAI CHIUKIN STEVE , CHANG MEI
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/28061 , H01L21/321 , H01L29/665 , H01L29/6659 , Y10S438/906
摘要： Method for recovering treated metal silicide surfaces or layers are provided. In at least one embodiment, a substrate having an at least partially oxidized metal silicide surface disposed thereon is cleaned to remove the oxidized regions to provide an altered metal silicide surface. The altered metal silicide surface is then exposed to one or more silicon-containing compounds at conditions sufficient to recover the metal silicide surface.
摘要翻译：提供了处理金属硅化物表面或层的回收方法。在至少一个实施例中，清洁具有设置在其上的至少部分氧化的金属硅化物表面的衬底以除去氧化区域以提供改变的金属硅化物表面。然后在足以回收金属硅化物表面的条件下将改变的金属硅化物表面暴露于一种或多种含硅化合物。

5. 发明申请

WO2007011568A2 CONTACT CLEAN BY REMOTE PLASMA AND REPAIR OF SILICIDE SURFACE 审中-公开
标题翻译：通过远程等离子体清洁和清洁硅胶表面
公开(公告)号：WO2007011568A2
公开(公告)日：2007-01-25
申请号：PCT/US2006/026719
申请日：2006-07-10
申请人： APPLIED MATERIALS, INC. , LU, Xinliang , KAO, Chien-Teh , LAI, Chiukin Steve , CHANG, Mei
发明人： LU, Xinliang , KAO, Chien-Teh , LAI, Chiukin Steve , CHANG, Mei
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/28061 , H01L21/321 , H01L29/665 , H01L29/6659 , Y10S438/906
摘要： Method for recovering treated metal silicide surfaces or layers are provided. In at least one embodiment, a substrate having an at least partially oxidized metal silicide surface disposed thereon is cleaned to remove the oxidized regions to provide an altered metal silicide surface. The altered metal silicide surface is then exposed to one or more silicon-containing compounds at conditions sufficient to recover the metal silicide surface.
摘要翻译：提供了处理金属硅化物表面或层的回收方法。在至少一个实施例中，清洁具有设置在其上的至少部分氧化的金属硅化物表面的衬底以除去氧化区域以提供改变的金属硅化物表面。然后在足以回收金属硅化物表面的条件下将改变的金属硅化物表面暴露于一种或多种含硅化合物。

6. 发明申请

WO2011139775A2 PROCESS CHAMBER LID DESIGN WITH BUILT-IN PLASMA SOURCE FOR SHORT LIFETIME SPECIES 审中-公开
标题翻译：用于短寿命物种的内置等离子体源的过程室盖设计
公开(公告)号：WO2011139775A2
公开(公告)日：2011-11-10
申请号：PCT/US2011/034147
申请日：2011-04-27
申请人： APPLIED MATERIALS, INC. , KAO, Chien-Teh , LAM, Hyman W.H. , CHANG, Mei , OR, David T. , DENNY, Nicholas R. , YUAN, Xiaoxiong (John)
发明人： KAO, Chien-Teh , LAM, Hyman W.H. , CHANG, Mei , OR, David T. , DENNY, Nicholas R. , YUAN, Xiaoxiong (John)
IPC分类号： H01L21/205
CPC分类号： C23C16/45536 , C23C16/45565 , C23C16/505 , H01J37/32091 , H01J37/3244
摘要： Embodiments of the invention generally relate to an apparatus and a method for depositing materials, and more particularly to a vapor deposition chamber configured to deposit a material during a plasma-enhanced process. In one embodiment a chamber for processing one or more substrates is provided. The chamber body comprises a chamber body defining a process volume, a substrate support disposed in the process volume and configured to support one or more substrates, a process lid assembly disposed over the substrate support, wherein the process lid assembly has a plasma cavity configured to generate a plasma and provide one or more radical species to the process volume, a RF (radio frequency) power source coupled to the gas distribution assembly, a plasma forming gas source coupled with the process lid assembly, and a reactant gas source coupled with the process lid assembly.
摘要翻译：本发明的实施方案一般涉及用于沉积材料的装置和方法，更具体地涉及被配置为在等离子体增强过程中沉积材料的气相沉积室。在一个实施例中，提供了用于处理一个或多个基板的室。室主体包括限定处理体积的室主体，设置在处理容积中并被配置为支撑一个或多个基板的基板支撑件，设置在基板支撑件上方的过程盖组件，其中处理盖组件具有被配置为产生等离子体并向处理体积提供一个或多个自由基物质，耦合到气体分配组件的RF（射频）功率源，与处理盖组件耦合的等离子体形成气体源和与该处理盖组件耦合的反应物气体源工艺盖组件。

7. 发明申请

WO2009085958A2 PASSIVATION LAYER FORMATION BY PLASMA CLEAN PROCESS TO REDUCE NATIVE OXIDE GROWTH 审中-公开
标题翻译：通过等离子清洁工艺形成钝化层以减少氧化物的生长
公开(公告)号：WO2009085958A2
公开(公告)日：2009-07-09
申请号：PCT/US2008/087436
申请日：2008-12-18
申请人： APPLIED MATERIALS, INC. , YANG, Haichun , LU, Xin Liang , KAO, Chien-Teh , CHANG, Mei
发明人： YANG, Haichun , LU, Xin Liang , KAO, Chien-Teh , CHANG, Mei
IPC分类号： H01L21/302 , H01L21/30
CPC分类号： H01L21/02068 , H01L21/31116 , H01L21/76224 , H01L29/665 , H01L29/6656 , H01L29/78
摘要： Embodiments described herein provide methods for removing native oxide surfaces on substrates while simultaneously passivating the underlying substrate surface. In one embodiment, a method is provided which includes positioning a substrate containing an oxide layer within a processing chamber, adjusting a first temperature of the substrate to about 80°C or less, generating a cleaning plasma from a gas mixture within the processing chamber, such that the gas mixture contains ammonia and nitrogen trifluoride having an NH3/NF3 molar ratio of about 10 or greater, and condensing the cleaning plasma onto the substrate. A thin film, containing ammonium hexafluorosilicate, is formed in part, from the native oxide during a plasma clean process. The method further includes heating the substrate to a second temperature of about 100°C or greater within the processing chamber while removing the thin film from the substrate and forming a passivation surface thereon.
摘要翻译：这里描述的实施例提供了用于去除衬底上的自然氧化物表面同时钝化下面的衬底表面的方法。在一个实施例中，提供了一种方法，其包括：将包含氧化物层的衬底定位在处理室内;将衬底的第一温度调节到大约80℃或更低;从处理室内的气体混合物产生清洁等离子体; 使得气体混合物含有具有约10或更大的NH 3 / NF 3摩尔比的氨和三氟化氮，并且将清洁等离子体冷凝到基板上。含有六氟硅酸铵的薄膜部分由等离子体清洁过程中的自然氧化物形成。该方法进一步包括在处理室内将基板加热至约100℃或更高的第二温度，同时从基板移除薄膜并在其上形成钝化表面。

8. 发明申请

WO2007092130A2 EPITAXIAL DEPOSITION PROCESS AND APPARATUS 审中-公开
标题翻译：外延沉积工艺和设备
公开(公告)号：WO2007092130A2
公开(公告)日：2007-08-16
申请号：PCT/US2007/001031
申请日：2007-01-16
申请人： APPLIED MATERIALS, INC. , LAM, Andrew , KIM, Yihwan , KUPPURAO, Satheesh , PHAN, See-Eng , LU, Xinliang , KAO, Chien-Teh
发明人： LAM, Andrew , KIM, Yihwan , KUPPURAO, Satheesh , PHAN, See-Eng , LU, Xinliang , KAO, Chien-Teh
IPC分类号： C23C16/452 , C23C16/505 , H01L21/306 , H01L21/02 , C23C16/02 , H01L21/00
CPC分类号： C23C16/452 , C23C16/0236 , C23C16/505 , H01L21/31116 , H01L21/67069
摘要： An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is introduced into a plasma cavity, and the gas mixture is energized to form a plasma of reactive gas in the plasma cavity. The reactive gas enters into the processing chamber and reacts with the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose an epitaxy surface. The epitaxy surface is substantially free of oxides. Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.
摘要翻译：公开了一种外延沉积工艺，其包括干式蚀刻工艺，随后进行外延沉积工艺。干蚀刻工艺涉及将要清洗的基底放置在处理室中以去除表面氧化物。将气体混合物引入等离子体空腔中，并且气体混合物被激发以在等离子体腔中形成反应气体的等离子体。反应气体进入处理室并与基板反应，形成薄膜。将衬底加热以蒸发薄膜并暴露外延表面。外延表面基本上不含氧化物。然后使用外延沉积在外延表面上形成外延层。

9. 发明申请

WO2014100413A1 APPARATUS AND METHODS FOR SYMMETRICAL GAS DISTRIBUTION WITH HIGH PURGE EFFICIENCY 审中-公开
标题翻译：具有高效率的对称气体分配的装置和方法
公开(公告)号：WO2014100413A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/076560
申请日：2013-12-19
申请人： APPLIED MATERIALS, INC. , KAO, Chien-Teh , CHANG, Mei , LAM, Hyman , HUSTON, Joel M. , YUAN, Xiaoxiong , CUVALCI, Olkan
发明人： KAO, Chien-Teh , CHANG, Mei , LAM, Hyman , HUSTON, Joel M. , YUAN, Xiaoxiong , CUVALCI, Olkan
IPC分类号： C23C16/455
CPC分类号： C23C16/45565 , C23C16/45536 , C23C16/50
摘要： Provided are apparatus and methods for depositing materials by vapor deposition and plasma enhanced vapor deposition techniques, and more particularly a gas distribution assembly and vapor deposition chamber to deposit a material. The gas distribution assembly comprises a plurality of sections with each section containing a flow channel with passages extending from the flow channel to the processing region of a processing chamber.
摘要翻译：提供了通过气相沉积和等离子体增强气相沉积技术沉积材料的装置和方法，更具体地说，是用于沉积材料的气体分配组件和气相沉积室。气体分配组件包括多个部分，每个部分包含流道，流道从流动通道延伸到处理室的处理区域。

10. 发明申请

WO2010059790A2 INTEGRATION SEQUENCES WITH TOP PROFILE MODIFICATION 审中-公开
标题翻译：具有顶级简档修改的集成序列
公开(公告)号：WO2010059790A2
公开(公告)日：2010-05-27
申请号：PCT/US2009/065088
申请日：2009-11-19
申请人： APPLIED MATERIALS, INC. , KAO, Chien-Teh , LU, Xinliang , GE, Zhenbin , CHANG, Mei , HUNG, Hoiman, Raymond , INGLE, Nitin
发明人： KAO, Chien-Teh , LU, Xinliang , GE, Zhenbin , CHANG, Mei , HUNG, Hoiman, Raymond , INGLE, Nitin
IPC分类号： H01L21/76 , H01L21/306
CPC分类号： H01L21/76232 , H01L21/67219 , H01L27/11521
摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to apparatus and methods for forming shallow trench isolations having recesses with rounded bottoms. One embodiment of the present invention comprises forming a recess in a filled trench structure by removing a portion of a material from the filled trench structure and rounding bottom corners of the recess. Rounding bottom corners is performed by depositing a conformal layer of the same material filled in the trench structure over the substrate and removing the conformal layer of the material from sidewalls of the recess.
摘要翻译：本发明的实施例一般涉及用于处理半导体衬底的装置和方法。特别地，本发明的实施例涉及用于形成具有具有圆形底部的凹部的浅沟槽隔离的装置和方法。本发明的一个实施例包括通过从填充的沟槽结构中去除一部分材料并且使凹部的圆角底部倒圆，在填充的沟槽结构中形成凹陷。通过将填充在沟槽结构中的相同材料的共形层沉积在衬底上并且从凹部的侧壁去除材料的共形层来进行圆角底角。

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