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1. 发明申请

WO2010042552A2 SELECTIVE ETCHING OF SILICON NITRIDE 审中-公开
标题翻译：硅酸盐的选择性蚀刻
公开(公告)号：WO2010042552A2
公开(公告)日：2010-04-15
申请号：PCT/US2009059743
申请日：2009-10-06
申请人： APPLIED MATERIALS INC , LU XINLIANG , YANG HAICHUN , GE ZHENBIN , LU NAN , OR DAVID T , KAO CHIEN-TEH , CHANG MEI
发明人： LU XINLIANG , YANG HAICHUN , GE ZHENBIN , LU NAN , OR DAVID T , KAO CHIEN-TEH , CHANG MEI
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116
摘要： Methods for etching dielectric layers comprising silicon and nitrogen are provided herein. In some embodiments, such methods may include providing a substrate having a dielectric layer comprising silicon and nitrogen disposed thereon, forming reactive species from a process gas comprising hydrogen (H2) and nitrogen trifluoride (NF3) using a remote plasma; and etching the dielectric layer using the reactive species. In some embodiments, an oxide layer is disposed adjacent to the dielectric layer. In some embodiments, the flow rate ratio of the process gas can be adjusted such that an etch selectivity of the dielectric layer to at least one of the oxide layer or the substrate is between about 0.8 to about 4.
摘要翻译：本文提供了用于蚀刻包括硅和氮的介电层的方法。在一些实施例中，这样的方法可以包括提供具有布置在其上的包含硅和氮的电介质层的衬底，使用远程等离子体从包含氢（H 2）和三氟化氮（NF 3）的工艺气体形成反应物种; 并使用反应性物质蚀刻电介质层。在一些实施例中，氧化物层邻近电介质层设置。在一些实施例中，可以调节处理气体的流速比，使得电介质层与至少一个氧化物层或衬底的蚀刻选择性在约0.8至约4之间。

2. 发明申请

WO2004081994A3 SUBSTRATE SUPPORT LIFT MECHANISM 审中-公开
标题翻译：基台支持机构
公开(公告)号：WO2004081994A3
公开(公告)日：2005-06-16
申请号：PCT/US2004007164
申请日：2004-03-10
申请人： APPLIED MATERIALS INC , SCHIEVE ERIC W , OR DAVID T , KOAI KEITH K , CORREA RENE T
发明人： SCHIEVE ERIC W , OR DAVID T , KOAI KEITH K , CORREA RENE T
IPC分类号： C23C16/458 , H01L21/687 , H01L21/00 , H01L21/68
CPC分类号： H01L21/68742 , C23C16/4582 , H01L21/68785
摘要： An apparatus for positioning a substrate support within a processing chamber is provided. In one embodiment, an apparatus for positioning a substrate support includes a gimbal mechanism having radially aligned clamping that substantially prevents movement from a pre-defined plane of a substrate support coupled to the gimbal mechanism during clamping. In another embodiment, an apparatus for positioning a substrate support includes substrate support disposed in a processing chamber. A stem, coupled to the substrate support, extends through the processing chamber and is coupled to a gimbal assembly. The gimbal assembly has a radial clamping mechanism is adapted to adjust a planar orientation of the substrate support about a plurality of axes without exerting rotational moments on the substrate support during clamping. A bearing assembly, having a first carriage block and a second carriage block, is coupled to the gimbal assembly. An actuator is coupled to at least one of the carriage blocks and is adapted to control the elevation of the substrate support within the processing chamber.
摘要翻译：提供了一种用于将衬底支撑件定位在处理室内的装置。在一个实施例中，用于定位衬底支撑件的装置包括具有径向对准的夹紧的万向架机构，其在夹紧期间基本上防止从联接到万向节机构的衬底支撑件的预定义平面移动。在另一个实施例中，用于定位衬底支撑件的装置包括设置在处理室中的衬底支撑件。耦合到衬底支撑件的杆延伸穿过处理室并且联接到万向节组件。万向节组件具有径向夹紧机构，其适于在夹持期间在基板支撑件周围不施加旋转力矩来调节基板支撑件围绕多个轴线的平面取向。具有第一滑架和第二滑架块的轴承组件联接到万向节组件。致动器联接到至少一个托架块，并且适于控制处理室内的基板支撑件的高度。

3. 发明申请

WO2006069085A3 AN IN-SITU CHAMBER CLEAN PROCESS TO REMOVE BY-PRODUCT DEPOSITS FROM CHEMICAL VAPOR ETCH CHAMBER 审中-公开
标题翻译：从化学蒸气蚀刻室中移除副产物沉淀物的现场室清洁方法
公开(公告)号：WO2006069085A3
公开(公告)日：2009-06-11
申请号：PCT/US2005046226
申请日：2005-12-20
申请人： APPLIED MATERIALS INC , KAO CHIEN-TEH , CHOU JING-PEI CONNIE , UMOTOY SALVADOR P , CHANG MEI , YUAN XIAOXIONG JOHN , CHANG YU , LU XINLIANG , PHAN SEE-ENG , KUANG WILLIAM , TZU GWO-CHUAN , OR DAVID T
发明人： KAO CHIEN-TEH , CHOU JING-PEI CONNIE , UMOTOY SALVADOR P , CHANG MEI , YUAN XIAOXIONG JOHN , CHANG YU , LU XINLIANG , PHAN SEE-ENG , KUANG WILLIAM , TZU GWO-CHUAN , OR DAVID T
IPC分类号： H01L21/00 , C23C14/00 , C23C16/00
CPC分类号： H01J37/3244 , B08B7/00 , B08B7/0035 , H01J37/32009 , H01J37/32357 , H01J37/32522 , H01J37/32862 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A method and apparatus for cleaning a processing chamber comprising blocking a flow of cooling fluid to a channel within a support member within a processing chamber, elevating the support member to be within about 0.1 inches of a gas distribution plate, heating the gas distribution plate, and introducing a thermally conductive gas through the gas distribution plate into the processing chamber. In one aspect, the chamber comprises a chamber body and a support assembly at least partially disposed within the chamber body adapted to support a substrate thereon. The chamber further comprises a lid assembly disposed on an upper surface of the chamber body. The lid assembly includes a top plate and a gas delivery assembly which define a plasma cavity therebetween, wherein the gas delivery assembly is adapted to heat the substrate. A remote plasma source having a U-shaped plasma region is connected to the gas delivery assembly.
摘要翻译：一种用于清洁处理室的方法和装置，包括将冷却流体流阻塞到处理室内的支撑构件内的通道，将支撑构件升高到气体分配板的约0.1英寸以内，加热气体分配板，并且将导热气体通过所述气体分配板引入所述处理室。在一个方面，所述腔室包括室主体和至少部分地设置在所述室主体内的适于在其上支撑基板的支撑组件。所述室还包括设置在所述室主体的上表面上的盖组件。盖组件包括顶板和在其间限定等离子体腔的气体输送组件，其中气体输送组件适于加热衬底。具有U形等离子体区域的远程等离子体源连接到气体输送组件。

4. 发明申请

WO2006069085A2 AN IN-SITU CHAMBER CLEAN PROCESS TO REMOVE BY-PRODUCT DEPOSITS FROM CHEMICAL VAPOR ETCH CHAMBER 审中-公开
标题翻译：从化学蒸气蚀刻室中移除副产物沉淀物的现场室清洁方法
公开(公告)号：WO2006069085A2
公开(公告)日：2006-06-29
申请号：PCT/US2005/046226
申请日：2005-12-20
申请人： APPLIED MATERIALS, INC. , KAO, Chien-Teh , CHOU, Jing-Pei (Connie) , UMOTOY, Salvador P. , CHANG, Mei , YUAN, Xiaoxiong (John) , CHANG, Yu , LU, Xinliang , PHAN, See-Eng , KUANG, William , TZU, Gwo-Chuan , OR, David T.
发明人： KAO, Chien-Teh , CHOU, Jing-Pei (Connie) , UMOTOY, Salvador P. , CHANG, Mei , YUAN, Xiaoxiong (John) , CHANG, Yu , LU, Xinliang , PHAN, See-Eng , KUANG, William , TZU, Gwo-Chuan , OR, David T.
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/3244 , B08B7/00 , B08B7/0035 , H01J37/32009 , H01J37/32357 , H01J37/32522 , H01J37/32862 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A method and apparatus for cleaning a processing chamber comprising blocking a flow of cooling fluid to a channel within a support member within a processing chamber, elevating the support member to be within about 0.1 inches of a gas distribution plate, heating the gas distribution plate, and introducing a thermally conductive gas through the gas distribution plate into the processing chamber. In one aspect, the chamber comprises a chamber body and a support assembly at least partially disposed within the chamber body adapted to support a substrate thereon. The chamber further comprises a lid assembly disposed on an upper surface of the chamber body. The lid assembly includes a top plate and a gas delivery assembly which define a plasma cavity therebetween, wherein the gas delivery assembly is adapted to heat the substrate. A remote plasma source having a U-shaped plasma region is connected to the gas delivery assembly.
摘要翻译：一种用于清洁处理室的方法和装置，包括将冷却流体流阻塞到处理室内的支撑构件内的通道，将支撑构件升高到气体分配板的约0.1英寸以内，加热气体分配板，并且将导热气体通过所述气体分配板引入所述处理室。在一个方面，所述腔室包括室主体和至少部分地设置在所述室主体内的适于在其上支撑基板的支撑组件。所述室还包括设置在所述室主体的上表面上的盖组件。盖组件包括顶板和在其间限定等离子体腔的气体输送组件，其中气体输送组件适于加热衬底。具有U形等离子体区域的远程等离子体源连接到气体输送组件。

5. 发明申请

WO2004081994A9 SUBSTRATE SUPPORT LIFT MECHANISM 审中-公开
标题翻译：基台支持机构
公开(公告)号：WO2004081994A9
公开(公告)日：2004-10-28
申请号：PCT/US2004007164
申请日：2004-03-10
申请人： APPLIED MATERIALS INC , SCHIEVE ERIC W , OR DAVID T , KOAI KEITH K , CORREA RENE T
发明人： SCHIEVE ERIC W , OR DAVID T , KOAI KEITH K , CORREA RENE T
IPC分类号： C23C16/458 , H01L21/687 , H01L21/00 , H01L21/68
CPC分类号： H01L21/68742 , C23C16/4582 , H01L21/68785
摘要： An apparatus for positioning a substrate support within a processing chamber is provided. In one embodiment, an apparatus for positioning a substrate support includes a gimbal mechanism having radially aligned clamping that substantially prevents movement from a pre-defined plane of a substrate support coupled to the gimbal mechanism during clamping. In another embodiment, an apparatus for positioning a substrate support includes substrate support disposed in a processing chamber. A stem, coupled to the substrate support, extends through the processing chamber and is coupled to a gimbal assembly. The gimbal assembly has a radial clamping mechanism is adapted to adjust a planar orientation of the substrate support about a plurality of axes without exerting rotational moments on the substrate support during clamping. A bearing assembly, having a first carriage block and a second carriage block, is coupled to the gimbal assembly. An actuator is coupled to at least one of the carriage blocks and is adapted to control the elevation of the substrate support within the processing chamber.
摘要翻译：提供了一种用于将衬底支撑件定位在处理室内的装置。在一个实施例中，用于定位衬底支撑件的装置包括具有径向对齐的夹紧的万向架机构，其在夹紧期间基本上防止从联接到万向节机构的衬底支撑件的预定义平面移动。在另一个实施例中，用于定位衬底支撑件的装置包括设置在处理室中的衬底支撑件。耦合到基板支撑件的杆延伸穿过处理室并且联接到万向节组件。万向节组件具有径向夹紧机构，其适于在夹持期间在基板支撑件周围不施加旋转力矩来调节基板支撑件围绕多个轴线的平面取向。具有第一托架块和第二托架块的轴承组件联接到万向节组件。致动器联接到至少一个托架块，并且适于控制处理室内的基板支撑件的高度。

6. 发明申请

WO2004081994A2 SUBSTRATE SUPPORT LIFT MECHANISM 审中-公开
标题翻译：基板支撑升降机构
公开(公告)号：WO2004081994A2
公开(公告)日：2004-09-23
申请号：PCT/US2004/007164
申请日：2004-03-10
申请人： APPLIED MATERIALS, INC. , SCHIEVE, Eric, W. , OR, David, T. , KOAI, Keith, K. , CORREA, Rene, T.
发明人： SCHIEVE, Eric, W. , OR, David, T. , KOAI, Keith, K. , CORREA, Rene, T.
IPC分类号： H01L21/00
CPC分类号： H01L21/68742 , C23C16/4582 , H01L21/68785
摘要： An apparatus for positioning a substrate support within a processing chamber is provided. In one embodiment, an apparatus for positioning a substrate support includes a gimbal mechanism having radially aligned clamping that substantially prevents movement from a pre-defined plane of a substrate support coupled to the gimbal mechanism during clamping. In another embodiment, an apparatus for positioning a substrate support includes substrate support disposed in a processing chamber. A stem, coupled to the substrate support, extends through the processing chamber and is coupled to a gimbal assembly. The gimbal assembly has a radial clamping mechanism is adapted to adjust a planar orientation of the substrate support about a plurality of axes without exerting rotational moments on the substrate support during clamping. A bearing assembly, having a first carriage block and a second carriage block, is coupled to the gimbal assembly. An actuator is coupled to at least one of the carriage blocks and is adapted to control the elevation of the substrate support within the processing chamber.
摘要翻译：提供了一种用于将衬底支撑件定位在处理室内的设备。在一个实施例中，一种用于定位基板支撑件的设备包括万向节机构，该万向节机构具有径向对齐的夹紧，其基本上防止在夹紧期间从耦合到万向节机构的基板支撑件的预定平面移动。在另一个实施例中，一种用于定位衬底支撑件的设备包括设置在处理室中的衬底支撑件。耦合到衬底支撑件的杆延伸穿过处理室并耦合到万向节组件。万向节组件具有径向夹紧机构，该夹紧机构适于在夹紧期间调节衬底支撑件围绕多个轴的平面定向而不在衬底支撑件上施加旋转力矩。具有第一滑架块和第二滑架块的轴承组件联接到万向节组件。致动器连接到至少一个滑架块，并且适于控制处理室内基板支架的高度。

7. 发明申请

WO2011139775A3 PROCESS CHAMBER LID DESIGN WITH BUILT-IN PLASMA SOURCE FOR SHORT LIFETIME SPECIES 审中-公开
标题翻译：用于短期生物物种的内置等离子体源的过程室盖设计
公开(公告)号：WO2011139775A3
公开(公告)日：2012-03-01
申请号：PCT/US2011034147
申请日：2011-04-27
申请人： APPLIED MATERIALS INC , KAO CHIEN-TEH , LAM HYMAN W H , CHANG MEI , OR DAVID T , DENNY NICHOLAS R , YUAN XIAOXIONG JOHN
发明人： KAO CHIEN-TEH , LAM HYMAN W H , CHANG MEI , OR DAVID T , DENNY NICHOLAS R , YUAN XIAOXIONG JOHN
IPC分类号： H01L21/205
CPC分类号： C23C16/45536 , C23C16/45565 , C23C16/505 , H01J37/32091 , H01J37/3244
摘要： Embodiments of the invention generally relate to an apparatus and a method for depositing materials, and more particularly to a vapor deposition chamber configured to deposit a material during a plasma-enhanced process. In one embodiment a chamber for processing one or more substrates is provided. The chamber body comprises a chamber body defining a process volume, a substrate support disposed in the process volume and configured to support one or more substrates, a process lid assembly disposed over the substrate support, wherein the process lid assembly has a plasma cavity configured to generate a plasma and provide one or more radical species to the process volume, a RF (radio frequency) power source coupled to the gas distribution assembly, a plasma forming gas source coupled with the process lid assembly, and a reactant gas source coupled with the process lid assembly.
摘要翻译：本发明的实施方案一般涉及用于沉积材料的装置和方法，更具体地涉及被配置为在等离子体增强过程中沉积材料的气相沉积室。在一个实施例中，提供了用于处理一个或多个基板的室。室主体包括限定处理体积的室主体，设置在处理容积中并且被配置为支撑一个或多个基板的基板支撑件，设置在基板支撑件上方的过程盖组件，其中处理盖组件具有被配置为产生等离子体并且为处理体积提供一个或多个自由基物质，耦合到气体分配组件的RF（射频）电源，与处理盖组件耦合的等离子体形成气体源，以及与工艺盖组件。

8. 发明申请

WO2011139775A2 PROCESS CHAMBER LID DESIGN WITH BUILT-IN PLASMA SOURCE FOR SHORT LIFETIME SPECIES 审中-公开
标题翻译：用于短寿命物种的内置等离子体源的过程室盖设计
公开(公告)号：WO2011139775A2
公开(公告)日：2011-11-10
申请号：PCT/US2011/034147
申请日：2011-04-27
申请人： APPLIED MATERIALS, INC. , KAO, Chien-Teh , LAM, Hyman W.H. , CHANG, Mei , OR, David T. , DENNY, Nicholas R. , YUAN, Xiaoxiong (John)
发明人： KAO, Chien-Teh , LAM, Hyman W.H. , CHANG, Mei , OR, David T. , DENNY, Nicholas R. , YUAN, Xiaoxiong (John)
IPC分类号： H01L21/205
CPC分类号： C23C16/45536 , C23C16/45565 , C23C16/505 , H01J37/32091 , H01J37/3244
摘要： Embodiments of the invention generally relate to an apparatus and a method for depositing materials, and more particularly to a vapor deposition chamber configured to deposit a material during a plasma-enhanced process. In one embodiment a chamber for processing one or more substrates is provided. The chamber body comprises a chamber body defining a process volume, a substrate support disposed in the process volume and configured to support one or more substrates, a process lid assembly disposed over the substrate support, wherein the process lid assembly has a plasma cavity configured to generate a plasma and provide one or more radical species to the process volume, a RF (radio frequency) power source coupled to the gas distribution assembly, a plasma forming gas source coupled with the process lid assembly, and a reactant gas source coupled with the process lid assembly.
摘要翻译：本发明的实施方案一般涉及用于沉积材料的装置和方法，更具体地涉及被配置为在等离子体增强过程中沉积材料的气相沉积室。在一个实施例中，提供了用于处理一个或多个基板的室。室主体包括限定处理体积的室主体，设置在处理容积中并被配置为支撑一个或多个基板的基板支撑件，设置在基板支撑件上方的过程盖组件，其中处理盖组件具有被配置为产生等离子体并向处理体积提供一个或多个自由基物质，耦合到气体分配组件的RF（射频）功率源，与处理盖组件耦合的等离子体形成气体源和与该处理盖组件耦合的反应物气体源工艺盖组件。

9. 发明申请

WO2010042552A3 SELECTIVE ETCHING OF SILICON NITRIDE 审中-公开
公开(公告)号：WO2010042552A3
公开(公告)日：2010-04-15
申请号：PCT/US2009/059743
申请日：2009-10-06
申请人： APPLIED MATERIALS, INC. , LU, Xinliang , YANG, Haichun , GE, Zhenbin , LU, Nan , OR, David T. , KAO, Chien-Teh , CHANG, Mei
发明人： LU, Xinliang , YANG, Haichun , GE, Zhenbin , LU, Nan , OR, David T. , KAO, Chien-Teh , CHANG, Mei
IPC分类号： H01L21/3065
摘要： Methods for etching dielectric layers comprising silicon and nitrogen are provided herein. In some embodiments, such methods may include providing a substrate having a dielectric layer comprising silicon and nitrogen disposed thereon, forming reactive species from a process gas comprising hydrogen (H2) and nitrogen trifluoride (NF3) using a remote plasma; and etching the dielectric layer using the reactive species. In some embodiments, an oxide layer is disposed adjacent to the dielectric layer. In some embodiments, the flow rate ratio of the process gas can be adjusted such that an etch selectivity of the dielectric layer to at least one of the oxide layer or the substrate is between about 0.8 to about 4.

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