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1. 发明申请

WO2010117964A3 METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE 审中-公开
标题翻译：具有减少损坏的低K电介质蚀刻方法
公开(公告)号：WO2010117964A3
公开(公告)日：2011-01-13
申请号：PCT/US2010030008
申请日：2010-04-05
申请人： LAM RES CORP , JI BING , TAKESHITA KENJI , BAILEY ANDREW D III , HUDSON ERIC A , MORAVEJ MARYAM , SIRARD STEPHEN M , KO JUNGMIN , LE DANIEL , HEFTY ROBERT C , CHENG YU , DELGADINO GERARDO A , YEN BI-MING
发明人： JI BING , TAKESHITA KENJI , BAILEY ANDREW D III , HUDSON ERIC A , MORAVEJ MARYAM , SIRARD STEPHEN M , KO JUNGMIN , LE DANIEL , HEFTY ROBERT C , CHENG YU , DELGADINO GERARDO A , YEN BI-MING
IPC分类号： H01L21/3065 , H05H1/34
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/31138
摘要： A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.
摘要翻译：通过本发明的实施例提供了一种用于蚀刻位于有机掩模下方的低k电介质层中的特征的方法。通过有机掩模将特征蚀刻到低k电介质层中。在低k电介质层上沉积氟碳层。氟碳层被固化。剥去有机面膜。

2. 发明申请

WO2009036053A3 TUNING VIA FACET WITH MINIMAL RIE LAG 审中-公开
标题翻译：通过最小的RIE LAG调整
公开(公告)号：WO2009036053A3
公开(公告)日：2009-05-07
申请号：PCT/US2008075841
申请日：2008-09-10
申请人： LAM RES CORP , SIRARD STEPHEN , NAGAI MIKIO , TAKESHITA KENJI , SRIVATSAN SRIDHARAN , KO JUNGMIN
发明人： SIRARD STEPHEN , NAGAI MIKIO , TAKESHITA KENJI , SRIVATSAN SRIDHARAN , KO JUNGMIN
IPC分类号： H01L21/3065
CPC分类号： H01L21/76804 , H01L21/76807 , H01L22/12 , H01L22/20
摘要： A method for designing an etch recipe is provided. An etch is performed, comprising providing an etch gas with a set halogen to carbon ratio, forming a plasma from the etch gas, and etching trenches over via. Via faceting is measured. The halogen to carbon ratio is reset according to the measured via faceting, where the halogen to carbon ratio is increased if too much faceting is measured and the halogen to carbon ratio is decreased if too little faceting is measured. The previous steps are repeated until a desired amount of faceting is obtained.
摘要翻译：提供了一种设计蚀刻配方的方法。执行蚀刻，包括提供具有设定的卤素与碳的比例的蚀刻气体，从蚀刻气体形成等离子体，以及蚀刻通过过孔的沟槽。测量通过面。卤素与碳的比例根据测量的通孔面重置，其中如果测量太多的小面积，则卤素与碳的比例将增加，并且如果测量的面积太小，则卤素与碳的比率降低。重复前面的步骤，直到获得所需的刻面数量。

3. 发明申请

WO2010117964A2 METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE 审中-公开
标题翻译：具有减少损坏的低K电介质蚀刻方法
公开(公告)号：WO2010117964A2
公开(公告)日：2010-10-14
申请号：PCT/US2010/030008
申请日：2010-04-05
申请人： LAM RESEARCH CORPORATION , JI, Bing , TAKESHITA, Kenji , BAILEY, Andrew D., III , HUDSON, Eric A. , MORAVEJ, Maryam , SIRARD, Stephen M. , KO, Jungmin , LE, Daniel , HEFTY, Robert C. , CHENG, Yu , DELGADINO, Gerardo A. , YEN, Bi-Ming
发明人： JI, Bing , TAKESHITA, Kenji , BAILEY, Andrew D., III , HUDSON, Eric A. , MORAVEJ, Maryam , SIRARD, Stephen M. , KO, Jungmin , LE, Daniel , HEFTY, Robert C. , CHENG, Yu , DELGADINO, Gerardo A. , YEN, Bi-Ming
IPC分类号： H01L21/3065 , H05H1/34
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/31138
摘要： A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.
摘要翻译：通过本发明的实施例提供了一种用于蚀刻位于有机掩模下方的低k电介质层中的特征的方法。通过有机掩模将特征蚀刻到低k电介质层中。在低k电介质层上沉积氟碳层。氟碳层被固化。剥去有机面膜。

4. 发明申请

WO2009036053A2 TUNING VIA FACET WITH MINIMAL RIE LAG 审中-公开
标题翻译：用最小的RIE LAG调整VIA面
公开(公告)号：WO2009036053A2
公开(公告)日：2009-03-19
申请号：PCT/US2008/075841
申请日：2008-09-10
申请人： LAM RESEARCH CORPORATION , SIRARD, Stephen , NAGAI, Mikio , TAKESHITA, Kenji , SRIVATSAN, Sridharan , KO, Jungmin
发明人： SIRARD, Stephen , NAGAI, Mikio , TAKESHITA, Kenji , SRIVATSAN, Sridharan , KO, Jungmin
IPC分类号： H01L21/3065
CPC分类号： H01L21/76804 , H01L21/76807 , H01L22/12 , H01L22/20
摘要： A method for designing an etch recipe is provided. An etch is performed, comprising providing an etch gas with a set halogen to carbon ratio, forming a plasma from the etch gas, and etching trenches over via. Via faceting is measured. The halogen to carbon ratio is reset according to the measured via faceting, where the halogen to carbon ratio is increased if too much faceting is measured and the halogen to carbon ratio is decreased if too little faceting is measured. The previous steps are repeated until a desired amount of faceting is obtained.
摘要翻译：提供了一种用于设计蚀刻配方的方法。执行蚀刻，包括提供具有设定的卤素碳比的蚀刻气体，由蚀刻气体形成等离子体，并且蚀刻通孔上的沟槽。测量通过刻面。根据所测量的通孔刻面重置卤素与碳的比例，其中如果测量了太多的刻面并且如果测量的刻面太小则卤素与碳的比率降低，则卤素与碳的比例增加。重复前面的步骤，直到获得所需量的刻面。

5. 发明申请

WO2006116137A3 ARTIFICIAL CORNEA 审中-公开
公开(公告)号：WO2006116137A3
公开(公告)日：2006-11-02
申请号：PCT/US2006/015173
申请日：2006-04-21
申请人： THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY , MYUNG, David , TA, Christopher , FAROOQUI, Nabeel , CURTIS, Frank, W. , KOH, Won-gun , KO, Jungmin , NOOLANDI, Jaan , CARRASCO, Michael, R.
发明人： MYUNG, David , TA, Christopher , FAROOQUI, Nabeel , CURTIS, Frank, W. , KOH, Won-gun , KO, Jungmin , NOOLANDI, Jaan , CARRASCO, Michael, R.
IPC分类号： A61F2/16
摘要： The present invention provides an artificial corneal implant (100) having an optically clear central core (110) and a porous, hydrophihc, biocompatible skirt ( 120) perpheral to the central core (110) In one embodiment, the central core (110) is made of an interpenetrating double network hydrogel and the skirt (120) is made of poly(2-hydroxyethyl acrylate In another embodiment, both the central core (110) and the skirt (120) are made of interpenetrating double network hydrogels The implant (100) may also have interdiffusion zone (130) in which the skirt (120) component is interpenetrated with the core (110) component, or vice versa In a preferred embodiment, biomolecules are linked to the skirt (120), core (110), or both These biomolecules are preferably molecules that support epithelial and/or fibroblast cell survival and growth The present invention also provides a method of making an artificial corneal implant (100) using photolithography

6. 发明申请

WO2006116137A2 ARTIFICIAL CORNEA 审中-公开
标题翻译：人造石
公开(公告)号：WO2006116137A2
公开(公告)日：2006-11-02
申请号：PCT/US2006015173
申请日：2006-04-21
申请人： UNIV LELAND STANFORD JUNIOR , MYUNG DAVID , TA CHRISTOPHER , FAROOQUI NABEEL , CURTIS FRANK W , KOH WON-GUN , KO JUNGMIN , NOOLANDI JAAN , CARRASCO MICHAEL R
发明人： MYUNG DAVID , TA CHRISTOPHER , FAROOQUI NABEEL , CURTIS FRANK W , KOH WON-GUN , KO JUNGMIN , NOOLANDI JAAN , CARRASCO MICHAEL R
IPC分类号： A61K35/30 , A61F2/14
CPC分类号： A61F2/142 , A61F2/15 , A61K35/12
摘要： The present invention provides an artificial corneal implant having an optically clear central core and a porous, hydrophilic, biocompatible skirt peripheral to the central core. In one embodiment, the central core is made of an interpenetrating double network hydrogel and the skirt is made of poly(2-hydroxy ethyl acrylate) (PHEA). In another embodiment, both the central core and the skirt are made of interpenetrating double network hydrogels. The artificial corneal implant may also have an interdiffusion zone in which the skirt component is interpenetrated with the core component, or vice versa. In a preferred embodiment, biomolecules are linked to the skirt, central core or both. These biomolecules may be any type of biomolecule, but are preferably biomolecules that support epithelial and/or fibroblast cell survival and growth. Preferably, the biomolecules are linked in a spatially selective manner. The present invention also provides a method of making an artificial corneal implant using photolithography.
摘要翻译：本发明提供了一种人造角膜植入物，其具有光学透明的中心纤芯和围绕中心纤芯的多孔，亲水的，生物相容的裙部。在一个实施方案中，中心芯由互穿双网络水凝胶制成，裙部由聚（2-羟乙基丙烯酸酯）（PHEA）制成。在另一个实施例中，中心芯和裙部均由互穿双网络水凝胶制成。人造角膜植入物还可以具有相互扩散区域，其中裙部组件与芯部件互穿，反之亦然。在优选的实施方案中，生物分子连接到裙部，中心芯或两者。这些生物分子可以是任何类型的生物分子，但优选支持上皮和/或成纤维细胞存活和生长的生物分子。优选地，生物分子以空间选择性方式连接。本发明还提供了一种使用光刻制造人造角膜植入物的方法。

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