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1. 发明申请

WO2002061898A1 MOUNTING OF OPTICAL DEVICE ON HEAT SINK 审中-公开
标题翻译：光学装置安装在散热器上
公开(公告)号：WO2002061898A1
公开(公告)日：2002-08-08
申请号：PCT/GB2002/000293
申请日：2002-01-23
申请人： THE UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW , HAMILTON, Craig, James , MARSH, John, Haig
发明人： HAMILTON, Craig, James , MARSH, John, Haig
IPC分类号： H01S5/024
CPC分类号： H01S5/024 , H01L2924/0002 , H01S5/0224 , H01S5/02272 , H01S5/162 , H01S5/164 , H01S5/22 , H01L2924/00
摘要： There is disclosed an improved optical device (10; 10a), eg comprising a semiconductor optically active or optoelectronic devices such as lasers, modulators, amplifiers, switching structures, or the like, mounted on a heatsink (28; 28a). The invention provides an optically active device (10; 10a) comprising a device body (12; 12a) having an active region (14; 14a) and an optically passive region(s) (20; 22) provided at one or more ends (24, 26; 26a) of the active region (14; 14a); and a heatsink (28; 28a); the device body (12; 12a) and heatsink (28; 28a) being retained in thermal association with one another such that a first end of the at least one of the optically passive region(s) (20, 22; 22a) adjacent an end of the active region (14; 14a) is provided within an area of the heatsink (28; 28a), and a second end of the said at least one optically passive region(s) (20, 22; 22a) is provided outwith the area of the heatsink (28; 28a).
摘要翻译：公开了一种改进的光学器件（10; 10a），例如包括安装在散热片（28; 28a）上的半导体光学或光电器件，例如激光器，调制器，放大器，开关结构等。本发明提供了一种光学有源器件（10; 10a），其包括具有有源区域（14; 14a）的器件本体（12; 12a）和设置在一个或多个端部处的光学无源区域（20; 22） 24,26; 26a）;以及和散热器（28; 28a）; 所述装置主体（12; 12a）和散热器（28; 28a）彼此热关联地保持，使得所述至少一个所述光学无源区域（20,22; 22a）中的所述至少一个邻近有源区域（14; 14a）的端部设置在散热器（28; 28a）的区域内，并且所述至少一个光学无源区域（20,22; 22a）的第二端被设置在外部散热器（28; 28a）的区域。

2. 发明申请

WO2002060021A2 IMPROVEMENTS IN OR RELATING TO LASERS 审中-公开
标题翻译：改善或与激光相关的改进
公开(公告)号：WO2002060021A2
公开(公告)日：2002-08-01
申请号：PCT/GB2002/000273
申请日：2002-01-23
申请人： THE UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW , MARSH, John, Haig , HAMILTON, Craig, James
发明人： MARSH, John, Haig , HAMILTON, Craig, James
IPC分类号： H01S5/026
CPC分类号： H01S5/10 , H01S5/026 , H01S5/1032
摘要： There is disclosed an improved laser device (10), comprising a semiconductor laser diode. The invention provides laser device (10) comprising: at least two lasing regions (12, 14); an interference region (16) into which an output of each lasing region (12, 14) is coupled; and an output region (118) extending from the interference region (116) to an output (20) of the device (10).
摘要翻译：公开了一种包括半导体激光二极管的改进的激光装置（10）。本发明提供的激光装置（10）包括：至少两个激光区域（12,14）; 每个激光区域（12,14）的输出耦合到其中的干涉区域（16）; 以及从干涉区域（116）延伸到装置（10）的输出端（20）的输出区域（118）。

3. 发明申请

WO2002060023A1 IMPROVEMENTS IN OR RELATING TO SEMICONDUCTOR LASERS 审中-公开
标题翻译：对半导体激光器的改进或相关
公开(公告)号：WO2002060023A1
公开(公告)日：2002-08-01
申请号：PCT/GB2002/000290
申请日：2002-01-23
申请人： THE UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW , HAMILTON, Craig, James , MARSH, John, Haig
发明人： HAMILTON, Craig, James , MARSH, John, Haig
IPC分类号： H01S5/16
CPC分类号： H01S5/22 , H01S5/026 , H01S5/0425 , H01S5/0655 , H01S5/1025 , H01S5/16 , H01S5/164 , H01S5/204
摘要： There is disclosed an improved semiconductor laser device (10; 10a), e.g. a single mode index guided laser diode. The device (10; 10a) comprises: an optical waveguide (15; 15a); at least one electrical contact (20; 20a) extending along part of a length of the waveguide (15; 15a); and wherein the at least one electrical contact (20; 20a) is shorter than the optical waveguide (15; 15a). By this arrangement a part of parts of the waveguide (15; 15a) are not electrically pumped, in use.
摘要翻译：公开了一种改进的半导体激光器件（10; 10a），例如单模折射引导激光二极管。所述装置（10; 10a）包括：光波导（15; 15a）; 沿着所述波导（15; 15a）的一部分长度延伸的至少一个电触头（20; 20a）; 并且其中所述至少一个电触头（20; 20a）比所述光波导（15; 15a）短。通过这种布置，波导（15; 15a）的一部分部分在使用中不被电泵送。

4. 发明申请

WO02061814A3 METHOD OF MANUFACTURING OPTICAL DEVICES AND RELATED IMPROVEMENTS 审中-公开
标题翻译：制造光学器件的方法和相关改进
公开(公告)号：WO02061814A3
公开(公告)日：2003-09-18
申请号：PCT/GB0200445
申请日：2002-02-01
申请人： UNIV GLASGOW , MARSH JOHN HAIG , MCDOUGALL STEWART DUNCAN , HAMILTON CRAIG JAMES , KOWALSKI OLEK PETER
发明人： MARSH JOHN HAIG , MCDOUGALL STEWART DUNCAN , HAMILTON CRAIG JAMES , KOWALSKI OLEK PETER
IPC分类号： H01S5/343 , H01L25/00 , H01L31/18 , H01L33/04 , H01S5/026 , H01S5/20 , H01S5/34 , H01L21/18 , H01L33/00
CPC分类号： B82Y20/00 , H01S5/026 , H01S5/2063 , H01S5/2068 , H01S5/3414
摘要： There is disclosed an improved method of manufacturing of an optical device (40), particularly semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and optical detectors. The invention provides a method of manufacturing optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum well (QW) structure (30), the method including the step of: processing the device body portion (15) so as to create extended defects at least in a portion (53) of the device portion (5). Each extended defect is a structural defect comprising a plurality of adjacent "point" defects.
摘要翻译：公开了一种改进的光学器件（40）的制造方法，特别是诸如激光二极管，光调制器，光放大器，光开关和光检测器之类的半导体光电器件。本发明提供一种制造光学装置（40）的方法，装置主体部分（15），其中将要制造装置（40）包括量子阱（QW）结构（30），该方法包括以下步骤：处理所述装置主体部分（15）以至少在所述装置部分（5）的一部分（53）中产生延伸的缺陷。每个延伸的缺陷是包括多个相邻“点”缺陷的结构缺陷。

5. 发明申请

WO2003023834A3 METHOD OF MANUFACTURING OPTICAL DEVICES AND RELATED IMPROVEMENTS 审中-公开
公开(公告)号：WO2003023834A3
公开(公告)日：2003-03-20
申请号：PCT/GB2002/003464
申请日：2002-07-30
申请人： THE UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW , INTENSE PHOTONICS LIMITED , MARSH, John, Haig , HAMILTON, Craig, James , KOWALSKI, Olek, Peter , MCDOUGALL, Stewart, Duncan , LIU, Xue, Feng , QIU, Bocang
发明人： MARSH, John, Haig , HAMILTON, Craig, James , KOWALSKI, Olek, Peter , MCDOUGALL, Stewart, Duncan , LIU, Xue, Feng , QIU, Bocang
IPC分类号： H01S5/34
摘要： There is disclosed an improved method of manufacturing an optical device using an impurity induced Quantum Well Intermixing (QWI) process. Reported QWI methods, and particularly Impurity Free Vacancy Diffusion (IFVD) methods, suffer from a number of disadvantages, eg the temperature at which Gallium Arsenide (GaAs) out-diffuses from the semiconductor material to the Silica (SiO 2 ) film. Accordingly, the present invention provides a method of manufacturing an optical device, a device body portion (5a) from which the device is to be made including at least one Quantum Well (QW) (10a), the method including the steps of: causing an impurity material to intermix with the at least one Quantum Well (QW) (10a), wherein the impurity material at least includes Copper (Cu).

6. 发明申请

WO03023834A2 METHOD OF MANUFACTURING OPTICAL DEVICES AND RELATED IMPROVEMENTS 审中-公开
标题翻译：制造光学器件的方法和相关改进
公开(公告)号：WO03023834A2
公开(公告)日：2003-03-20
申请号：PCT/GB0203464
申请日：2002-07-30
申请人： UNIV GLASGOW , INTENSE PHOTONICS LTD , MARSH JOHN HAIG , HAMILTON CRAIG JAMES , KOWALSKI OLEK PETER , MCDOUGALL STEWART DUNCAN , LIU XUE FENG , QIU BOCANG
发明人： MARSH JOHN HAIG , HAMILTON CRAIG JAMES , KOWALSKI OLEK PETER , MCDOUGALL STEWART DUNCAN , LIU XUE FENG , QIU BOCANG
IPC分类号： H01S5/323 , H01L21/18 , H01L25/00 , H01L31/18 , H01L33/06 , H01S5/34
CPC分类号： B82Y20/00 , H01L21/182 , H01S5/3413
摘要： There is disclosed an improved method of manufacturing an optical device using an impurity induced Quantum Well Intermixing (QWI) process. Reported QWI methods, and particularly Impurity Free Vacancy Diffusion (IFVD) methods, suffer from a number of disadvantages, eg the temperature at which Gallium Arsenide (GaAs) out-diffuses from the semiconductor material to the Silica (SiO>2
摘要翻译：公开了使用杂质诱导量子阱混合（QWI）工艺制造光学器件的改进方法。报告的QWI方法，特别是无杂质空闲扩散（IFVD）方法存在许多缺点，例如砷化镓（GaAs）从半导体材料扩散到二氧化硅（SiO 2）膜的温度。因此，本发明提供一种制造光学装置的方法，包括至少一个量子阱（QW）的装置主体部分（5a），所述装置主体部分（5a）包括以下步骤：引起与所述至少一个量子阱（QW）（10a）混合的杂质材料，其中所述杂质材料至少包括铜（Cu）。

7. 发明申请

WO02060021A3 IMPROVEMENTS IN OR RELATING TO LASERS 审中-公开
标题翻译：改善或与激光相关的改进
公开(公告)号：WO02060021A3
公开(公告)日：2003-09-25
申请号：PCT/GB0200273
申请日：2002-01-23
申请人： UNIV GLASGOW , MARSH JOHN HAIG , HAMILTON CRAIG JAMES
发明人： MARSH JOHN HAIG , HAMILTON CRAIG JAMES
IPC分类号： H01S5/026 , H01S5/10
CPC分类号： H01S5/10 , H01S5/026 , H01S5/1032
摘要： There is disclosed an improved laser device (10), comprising a semiconductor laser diode. The invention provides laser device (10) comprising: at least two lasing regions (12, 14); an interference region (16) into which an output of each lasing region (12, 14) is coupled; and an output region (118) extending from the interference region (116) to an output (20) of the device (10).
摘要翻译：公开了一种包括半导体激光二极管的改进的激光装置（10）。本发明提供的激光装置（10）包括：至少两个激光区域（12,14）; 每个激光区域（12,14）的输出耦合到其中的干涉区域（16）; 以及从干涉区域（116）延伸到装置（10）的输出端（20）的输出区域（118）。

8. 发明申请

WO2002060022A3 IMPROVEMENTS IN OR RELATING TO OPTICAL DEVICES 审中-公开
公开(公告)号：WO2002060022A3
公开(公告)日：2002-08-01
申请号：PCT/GB2002/000282
申请日：2002-01-23
申请人： THE UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW , HAMILTON, Craig, James
发明人： HAMILTON, Craig, James
IPC分类号： H01S5/026
摘要： There is disclosed an improved optical device (110), such as a laser, modulator, amplifier, switch, ore the like. The invention provides an optically active device (110) comprising: an optically active region (150) having an input / output end (165); and an optically passive region (155, 160) extending from said input / output end (165, 170) of the optically active region (150) to an input / output end (175, 180) of the device (110).

9. 发明申请

WO2002060022A2 IMPROVEMENTS IN OR RELATING TO OPTICAL DEVICES 审中-公开
标题翻译：光学设备的改进或相关
公开(公告)号：WO2002060022A2
公开(公告)日：2002-08-01
申请号：PCT/GB2002/000282
申请日：2002-01-23
申请人： THE UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW , HAMILTON, Craig, James
发明人： HAMILTON, Craig, James
IPC分类号： H01S5/026
CPC分类号： B82Y20/00 , H01S5/026 , H01S5/0265 , H01S5/3413 , H01S5/3414
摘要： There is disclosed an improved optical device (110), such as a laser, modulator, amplifier, switch, ore the like. The invention provides an optically active device (110) comprising: an optically active region (150) having an input / output end (165); and an optically passive region (155, 160) extending from said input / output end (165, 170) of the optically active region (150) to an input / output end (175, 180) of the device (110).
摘要翻译：公开了一种改进的光学器件（110），例如激光器，调制器，放大器，开关，等等。本发明提供一种光学有源器件（110），包括：具有输入/输出端（165）的光学有源区（150）; 以及从所述光学有源区域（150）的所述输入/输出端（165,170）延伸到所述装置（110）的输入/输出端（175,180）的光学无源区域（155,160）。

10. 发明申请

WO2002059952A2 METHOD OF MANUFACTURING OPTICAL DEVICES AND RELATED IMPROVEMENTS 审中-公开
标题翻译：制造光学器件的方法和相关改进
公开(公告)号：WO2002059952A2
公开(公告)日：2002-08-01
申请号：PCT/GB2002/000292
申请日：2002-01-23
申请人： THE UNIVERSITY COURT OF THE UNIVERSITY OF GLASGOW , HAMILTON, Craig, James , KOWALSKI, Olek, Peter , MARSH, John, Haig , MCDOUGALL, Stewart, Duncan
发明人： HAMILTON, Craig, James , KOWALSKI, Olek, Peter , MARSH, John, Haig , MCDOUGALL, Stewart, Duncan
IPC分类号： H01L21/18
CPC分类号： B82Y20/00 , H01S5/026 , H01S5/0265 , H01S5/3413 , H01S5/3414
摘要： There is disclosed a method of manufacturing of optical devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. There is further disclosed Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices. According to the present invention there is provided a method of manufacturing an optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well Intermixing (QWI) structure (30), the method including the step of plasma etching at least part of a surface of the device body portion (5) prior to depositing a dielectric layer (51) thereon so as to introduce structural defects at least into a portion (53) of the device body portion (5) adjacent the dielectric layer (51). The structural defects substantially comprise "point" defects.
摘要翻译：公开了一种制造光学器件的方法，例如半导体光电器件，例如激光二极管，光调制器，光放大器，光开关等。还公开了包括这种装置的光电集成电路（OEIC）和光子集成电路（PIC）。根据本发明，提供了一种制造光学装置（40）的方法，装置本体部分（15），其中将要制造装置（40）包括量子阱混合（QWI）结构（30），该方法包括在其上沉积介电层（51）之前等离子体蚀刻器件本体部分（5）的表面的至少一部分的步骤，以至少将结构缺陷引入器件本体的部分（53）邻近电介质层（51）的部分（5）。结构缺陷基本上包括“点”缺陷。

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