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1. 发明申请

WO2012082323A1 SECTIONAL WAFER CARRIER 审中-公开
公开(公告)号：WO2012082323A1
公开(公告)日：2012-06-21
申请号：PCT/US2011/061615
申请日：2011-11-21
申请人： VEECO INSTRUMENTS INC. , GURARY, Alexander I. , KRAUS, Joseph Arthur , PARANJPE, Ajit , QUINN, William, E. , CREWE, David Albert
发明人： GURARY, Alexander I. , KRAUS, Joseph Arthur , PARANJPE, Ajit , QUINN, William, E. , CREWE, David Albert
IPC分类号： H01L21/683 , H01L21/208 , C23C16/458 , H01L21/68
CPC分类号： C23C16/4584 , C23C16/4585 , C23C16/4586 , H01L21/67754 , H01L21/68707 , H01L21/6875 , H01L21/68764 , H01L21/68771
摘要： A structure for a chemical vapor deposition reactor includes a support element (50) defining oppositely-facing substantially planar upper and lower surfaces and a vertical rotational axis (52) substantially perpendicular to the upper and lower surfaces, and a plurality of carrier sections (70) releasably engaged with the support element. Each carrier section (70) can include oppositely-facing substantially planar top and bottom surfaces and at least one aperture (73) extending between the top and bottom surfaces. The carrier sections (70) can be disposed on the support element (50) with the bottom surfaces (79) of the carrier sections facing toward the upper surface (59) of the support element, so that (wafers 30) can be held in the apertures (73) of the carrier sections with one surface (32) of each wafer confronting the support element and an opposite surface (31) exposed at the top (surface 78) of the carrier sections.
摘要翻译：用于化学气相沉积反应器的结构包括限定相对面对的基本平坦的上表面和下表面的支撑元件（50）和基本上垂直于上表面和下表面的垂直旋转轴线（52），以及多个承载部分）可释放地与支撑元件接合。每个载体部分（70）可以包括相对面对的基本平坦的顶部和底部表面以及在顶部和底部表面之间延伸的至少一个孔（73）。载体部分（70）可以设置在支撑元件（50）上，载体部分的底表面（79）面向支撑元件的上表面（59），使得（晶片30）可以保持在载体部分的孔（73）具有面对支撑元件的每个晶片的一个表面（32）和暴露在载体部分的顶部（表面78）处的相对表面（31）。

2. 发明申请

WO2009075747A1 WAFER CARRIER WITH HUB 审中-公开
标题翻译：带框架的拖车
公开(公告)号：WO2009075747A1
公开(公告)日：2009-06-18
申请号：PCT/US2008/013295
申请日：2008-12-01
申请人： VEECO INSTRUMENTS INC. , BOGUSLAVSKIY, Vadim , GURARY, Alexander, I. , MOY, Keng , ARMOUR, Eric, A.
发明人： BOGUSLAVSKIY, Vadim , GURARY, Alexander, I. , MOY, Keng , ARMOUR, Eric, A.
IPC分类号： H01L21/205 , H01L21/677
CPC分类号： C23C16/4581 , C23C16/4584 , H01L21/68764 , H01L21/68771 , H01L21/68792
摘要： A wafer carrier (30) for a rotating disc CVD reactor includes a unitary plate (32) of a ceramic such as silicon carbide defining wafer-holding features such as pockets (38) on its upstream surface (34) and also includes a hub (40) removably mounted to the plate (32) in a central region (44) of the plate (32). The hub (40) provides a secure connection to the spindle (16) of the reactor without imposing concentrated stresses on the ceramic plate (32). The hub (40) can be removed during cleaning of the plate (32). The wafer carrier (30) also preferably includes a gas flow facilitating element (348, 448) on the upstream surface (34) of the plate (32) in the central region (44) of the plate (32). The gas flow facilitating element (348, 448) helps redirect the flow of incident gases along the upstream surface (34) and away from a flow discontinuity in the central region (44).
摘要翻译：用于旋转盘CVD反应器的晶片载体（30）包括诸如碳化硅的陶瓷的整体板（32），其限定晶片保持特征，例如在其上游表面（34）上的凹穴（38），并且还包括毂 40）可移除地安装在板（32）的中心区域（44）中的板（32）上。轮毂（40）提供与反应器的主轴（16）的牢固连接，而不会在陶瓷板（32）上施加集中的应力。在清洁板（32）期间可以移除轮毂（40）。晶片载体（30）还优选地包括位于板（32）的中心区域（44）中的板（32）的上游表面（34）上的气流促进元件（348,448）。气体促进元件（348,448）有助于重新引导沿着上游表面（34）的入射气体流并远离中心区域（44）中的流动不连续。

3. 发明申请

WO2012166770A3 HEATED WAFER CARRIER PROFILING 审中-公开
标题翻译：加热滚筒载体轮廓
公开(公告)号：WO2012166770A3
公开(公告)日：2013-02-28
申请号：PCT/US2012039947
申请日：2012-05-30
申请人： VEECO INSTR INC , BOGUSLAVSKIY VADIM , MANGUM JOSHUA , KING MATTHEW , MARCELO EARL , ARMOUR ERIC A , GURARY ALEXANDER I , QUINN WILLIAM E , TAS GURAY
发明人： BOGUSLAVSKIY VADIM , MANGUM JOSHUA , KING MATTHEW , MARCELO EARL , ARMOUR ERIC A , GURARY ALEXANDER I , QUINN WILLIAM E , TAS GURAY
IPC分类号： H01L21/205 , H01L21/683
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/46 , C23C16/52 , G01N21/71 , G01N21/75 , G01N23/20033 , G01N2021/1731 , G01N2021/745 , H01L21/67109 , H01L21/68771
摘要： An apparatus provides a carrier (80) rotatable about an axis of rotation (22) where the carrier has a top surface (88) adapted to hold at least one semiconductor wafer (140) and a surface characterization tool (120) which is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation A method using the apparatus is also included.
摘要翻译：一种装置提供一个能够围绕旋转轴线（22）旋转的载体（80），其中载体具有适于保持至少一个半导体晶片（140）的表面（88）和表面表征工具（120）在相对于载体的顶表面和/或横向于旋转轴线的晶片的多个位置上移动也包括使用该装置的方法。

4. 发明申请

WO2012092127A8 METHODS AND SYSTEMS FOR IN-SITU PYROMETER CALIBRATION 审中-公开
公开(公告)号：WO2012092127A8
公开(公告)日：2012-07-05
申请号：PCT/US2011/066831
申请日：2011-12-22
申请人： VEECO INSTRUMENTS INC. , GURARY, Alexander, I. , BOGUSLAVSKIY, Vadim , KRISHNAN, Sandeep , KING, Matthew
发明人： GURARY, Alexander, I. , BOGUSLAVSKIY, Vadim , KRISHNAN, Sandeep , KING, Matthew
IPC分类号： G01J5/00
摘要： A method of in-situ pyrometer calibration for a wafer treatment reactor such as a CVD reactor 12 desirably includes the steps of positioning a calibrating pyrometer 80 at a first calibrating position A and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating a support element 40 about a rotational axis 42, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer 71 installed at a first operating position 1R, and obtaining first calibrating temperature measurements from the calibrating pyrometer 80. Both the calibrating pyrometer 80 and the first operating pyrometer 71 desirably are adapted to receive radiation from a first portion of the wafer support element 40 at a first radial distance D1 from the rotational axis 42 of the wafer support element.

5. 发明申请

WO2012139006A2 METAL-ORGANIC VAPOR PHASE EPITAXY SYSTEM AND PROCESS 审中-公开
标题翻译：金属有机蒸汽相外延系统和工艺
公开(公告)号：WO2012139006A2
公开(公告)日：2012-10-11
申请号：PCT/US2012/032533
申请日：2012-04-06
申请人： VEECO INSTRUMENTS INC. , PARANJPE, Ajit , GURARY, Alexander , QUINN, William
发明人： PARANJPE, Ajit , GURARY, Alexander , QUINN, William
CPC分类号： C30B25/14 , C30B25/10 , C30B25/12 , C30B35/00
摘要： A VPE reactor is improved by providing temperature control to within 0.5 °C, and greater process gas uniformity via novel reactor shaping, unique wafer motion structures, improvements in thermal control systems, improvements in gas flow structures, improved methods for application of gas and temperature, and improved control systems for detecting and reducing process variation.
摘要翻译：通过提供温度控制在0.5°C以内，通过新型反应器成型，独特的晶片运动结构，热控制系统的改进，气流结构的改进，气体和温度的应用改进方法，改进了VPE反应器，以及用于检测和减少过程变化的改进的控制系统。

6. 发明申请

WO2009009121A1 MOVABLE INJECTORS IN ROTATING DISC GAS REACTORS 审中-公开
标题翻译：可旋转注射器旋转盘式反应器
公开(公告)号：WO2009009121A1
公开(公告)日：2009-01-15
申请号：PCT/US2008/008507
申请日：2008-07-09
申请人： VEECO INSTRUMENTS INC. , SFERLAZZO, Piero , GURARY, Alexander, I. , ARMOUR, Eric, A. , QUINN, William, E. , TING, Steve
发明人： SFERLAZZO, Piero , GURARY, Alexander, I. , ARMOUR, Eric, A. , QUINN, William, E. , TING, Steve
IPC分类号： C23C16/00
CPC分类号： C23C16/45589
摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates (138) are rotated on a carrier (104) about an axis (106) while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets (170). A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector (108), and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.
摘要翻译：提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底（138）围绕轴线（106）在载体（104）上旋转，同时保持所述一个或多个基板基本上垂直于旋转轴线并且沿着旋转轴线沿上游方向面对。在旋转期间，第一气体沿着下游方向从第一组气体入口（170）朝向一个或多个基板排出。第二气体沿着下游方向从至少一个可移动气体喷射器（108）朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量移动或朝向旋转轴。

7. 发明申请

WO2013173152A1 ROTATING DISK REACTOR WITH FERROFLUID SEAL FOR CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：旋转盘式反应器，具有氟化氢密封化学蒸气沉积
公开(公告)号：WO2013173152A1
公开(公告)日：2013-11-21
申请号：PCT/US2013/040246
申请日：2013-05-09
申请人： VEECO INSTRUMENTS INC. , BARRISS, Louise, S. , COMUNALE, Richard, A. , FREMGEN, Roger, P. , GURARY, Alexander, I. , LUSE, Todd, A. , MILGATE, III, Robert, White , POLLOCK, John, D.
发明人： BARRISS, Louise, S. , COMUNALE, Richard, A. , FREMGEN, Roger, P. , GURARY, Alexander, I. , LUSE, Todd, A. , MILGATE, III, Robert, White , POLLOCK, John, D.
IPC分类号： C23C16/44 , C23C16/52
CPC分类号： C23C16/4584 , C23C16/4586 , C23C16/46 , C23C16/52 , H01L21/68785 , H01L21/68792
摘要： A rotating disk reactor for chemical vapor deposition includes a vacuum chamber and a ferrofluid feedthrough comprising an upper and a lower ferrofluid seal that passes a motor shaft into the vacuum chamber. A motor is coupled to the motor shaft and is positioned in an atmospheric region between the upper and the lower ferrofluid seal. A turntable is positioned in the vacuum chamber and is coupled to the motor shaft so that the motor rotates the turntable at a desired rotation rate. A dielectric support is coupled to the turntable so that the turntable rotates the dielectric support when driven by the shaft. A substrate carrier is positioned on the dielectric support in the vacuum chamber for chemical vapor deposition processing. A heater is positioned proximate to the substrate carrier that controls the temperature of the substrate carrier to a desired temperature for chemical vapor deposition.
摘要翻译：用于化学气相沉积的旋转盘式反应器包括真空室和铁磁流体馈通，其包括使马达轴进入真空室的上部和下部铁磁流体密封件。电动机联接到电动机轴并且位于上部和下部铁磁流体密封件之间的大气区域中。转盘位于真空室中并联接到电动机轴，使得电动机以期望的转速旋转转台。电介质支撑件联接到转盘，使得转盘在被轴驱动时旋转电介质支架。衬底载体位于用于化学气相沉积处理的真空室中的电介质支撑体上。加热器位于基板载体附近，将基板载体的温度控制到用于化学气相沉积的所需温度。

8. 发明申请

WO2012139006A3 METAL-ORGANIC VAPOR PHASE EPITAXY SYSTEM AND PROCESS 审中-公开
标题翻译：金属有机蒸汽相外延系统和工艺
公开(公告)号：WO2012139006A3
公开(公告)日：2013-04-18
申请号：PCT/US2012032533
申请日：2012-04-06
申请人： VEECO INSTR INC , PARANJPE AJIT , GURARY ALEXANDER , QUINN WILLIAM
发明人： PARANJPE AJIT , GURARY ALEXANDER , QUINN WILLIAM
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C30B25/14 , C30B25/10 , C30B25/12 , C30B35/00
摘要： A VPE reactor is improved by providing temperature control to within 0.5 °C, and greater process gas uniformity via novel reactor shaping, unique wafer motion structures, improvements in thermal control systems, improvements in gas flow structures, improved methods for application of gas and temperature, and improved control systems for detecting and reducing process variation.
摘要翻译：通过提供温度控制在0.5°C以内，通过新型反应器成型，独特的晶片运动结构，热控制系统的改进，气流结构的改进，气体和温度的应用改进方法，改进了VPE反应器，以及用于检测和减少过程变化的改进的控制系统。

9. 发明申请

WO2012166770A2 HEATED WAFER CARRIER PROFILING 审中-公开
标题翻译：加热滚筒轮廓图
公开(公告)号：WO2012166770A2
公开(公告)日：2012-12-06
申请号：PCT/US2012/039947
申请日：2012-05-30
申请人： VEECO INSTRUMENTS INC. , BOGUSLAVSKIY, Vadim , MANGUM, Joshua , KING, Matthew , MARCELO, Earl , ARMOUR, Eric, A. , GURARY, Alexander, I. , QUINN, William, E. , TAS, Guray
发明人： BOGUSLAVSKIY, Vadim , MANGUM, Joshua , KING, Matthew , MARCELO, Earl , ARMOUR, Eric, A. , GURARY, Alexander, I. , QUINN, William, E. , TAS, Guray
IPC分类号： H01L21/205 , H01L21/683
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/46 , C23C16/52 , G01N21/71 , G01N21/75 , G01N23/20033 , G01N2021/1731 , G01N2021/745 , H01L21/67109 , H01L21/68771
摘要： An apparatus provides a carrier (80) rotatable about an axis of rotation (22) where the carrier has a top surface (88) adapted to hold at least one semiconductor wafer (140) and a surface characterization tool (120) which is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation A method using the apparatus is also included.
摘要翻译：一种装置提供一种能够围绕旋转轴线（22）旋转的载体（80），其中载体具有适于保持至少一个半导体晶片（140）的表面（88）和表面表征工具（120）在相对于载体的顶表面和/或横向于旋转轴线的晶片的多个位置上移动也包括使用该装置的方法。

10. 发明申请

WO2012092127A1 METHODS AND SYSTEMS FOR IN-SITU PYROMETER CALIBRATION 审中-公开
标题翻译：用于原位染色体校准的方法和系统
公开(公告)号：WO2012092127A1
公开(公告)日：2012-07-05
申请号：PCT/US2011066831
申请日：2011-12-22
申请人： VEECO INSTR INC , GURARY ALEXANDER I , BOGUSLAVSKIY VADIM , KRISHNAN SANDEEP , KING MATTHEW
发明人： GURARY ALEXANDER I , BOGUSLAVSKIY VADIM , KRISHNAN SANDEEP , KING MATTHEW
IPC分类号： G01J5/00
CPC分类号： G01J5/0003 , G01J5/0007 , G01J2005/0048
摘要： A method of in-situ pyrometer calibration for a wafer treatment reactor such as a CVD reactor 12 desirably includes the steps of positioning a calibrating pyrometer 80 at a first calibrating position A and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating a support element 40 about a rotational axis 42, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer 71 installed at a first operating position 1R, and obtaining first calibrating temperature measurements from the calibrating pyrometer 80. Both the calibrating pyrometer 80 and the first operating pyrometer 71 desirably are adapted to receive radiation from a first portion of the wafer support element 40 at a first radial distance D1 from the rotational axis 42 of the wafer support element.
摘要翻译：用于诸如CVD反应器12的晶片处理反应器的原位高温计校准的方法理想地包括将校准高温计80定位在第一校准位置A并加热反应器直到反应器达到高温计校准温度的步骤。该方法理想地还包括围绕旋转轴线42旋转支撑元件40，并且当支撑元件围绕旋转轴线旋转时，从安装在第一操作位置1R的第一操作高温计71获得第一操作温度测量值，并获得第一从校准高温计80校准温度测量值。理想地，校准高温计80和第一操作高温计71都适合于从晶片的旋转轴42以第一径向距离D1接收来自晶片支撑元件40的第一部分的辐射支持元素

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