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1. 发明申请

WO2013033315A3 WAFER CARRIER WITH THERMAL FEATURES 审中-公开
标题翻译：具有热特性的晶片载体
公开(公告)号：WO2013033315A3
公开(公告)日：2013-05-16
申请号：PCT/US2012053016
申请日：2012-08-30
申请人： VEECO INSTR INC , PARANJPE AJIT , VOLF BORIS , ARMOUR ERIC A , KRISHNAN SANDEEP , WEI GUANGHUA , URBAN LUKAS
发明人： PARANJPE AJIT , VOLF BORIS , ARMOUR ERIC A , KRISHNAN SANDEEP , WEI GUANGHUA , URBAN LUKAS
IPC分类号： H01L21/683 , C23C16/458 , H01L21/205
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/4586 , H01L21/67103 , H01L21/68707 , H01L21/68771
摘要： A wafer carrier (32) used in wafer treatments such as chemical vapor deposition has pockets (40) for holding the wafers (70) and support surfaces (56) for supporting the wafers above the floors (46) of the pockets. The carrier (32) is provided with thermal control features such as trenches (41) which form thermal barriers having lower thermal conductivity than surrounding portions of the carrier. These thermal control features promote a more uniform temperature distribution across the wafer surfaces (72, 74) and across the carrier top surface (34).
摘要翻译：用于诸如化学气相沉积之类的晶片处理中的晶片载体（32）具有用于保持晶片（70）的袋（40）和用于将晶片支撑在袋的地板（46）上方的支撑表面（56）。载体（32）设置有热控制特征，例如形成具有比载体的周围部分低的导热率的热障的沟槽（41）。这些热控制特征促进晶片表面（72,74）和载体顶表面（34）上的更均匀的温度分布。

2. 发明申请

WO2013033315A2 WAFER CARRIER WITH THERMAL FEATURES 审中-公开
标题翻译：具有热特性的散热器
公开(公告)号：WO2013033315A2
公开(公告)日：2013-03-07
申请号：PCT/US2012/053016
申请日：2012-08-30
申请人： VEECO INSTRUMENTS INC. , PARANJPE, Ajit , VOLF, Boris , ARMOUR, Eric, A. , KRISHNAN, Sandeep , WEI, Guanghua , URBAN, Lukas
发明人： PARANJPE, Ajit , VOLF, Boris , ARMOUR, Eric, A. , KRISHNAN, Sandeep , WEI, Guanghua , URBAN, Lukas
IPC分类号： H01L21/683 , H01L21/205 , C23C16/458
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/4586 , H01L21/67103 , H01L21/68707 , H01L21/68771
摘要： A wafer carrier (32) used in wafer treatments such as chemical vapor deposition has pockets (40) for holding the wafers (70) and support surfaces (56) for supporting the wafers above the floors (46) of the pockets. The carrier (32) is provided with thermal control features such as trenches (41) which form thermal barriers having lower thermal conductivity than surrounding portions of the carrier. These thermal control features promote a more uniform temperature distribution across the wafer surfaces (72, 74) and across the carrier top surface (34).
摘要翻译：在诸如化学气相沉积的晶片处理中使用的晶片载体（32）具有用于保持晶片（70）的凹槽（40）和用于将晶片支撑在凹穴的地板（46）上方的支撑表面（56）。载体（32）设置有诸如沟槽（41）的热控制特征，其形成具有比载体周围部分更低的热导率的热障。这些热控制特征促使晶片表面（72,74）和跨越载体顶表面（34）的更均匀的温度分布。

3. 发明申请

WO2012092127A8 METHODS AND SYSTEMS FOR IN-SITU PYROMETER CALIBRATION 审中-公开
公开(公告)号：WO2012092127A8
公开(公告)日：2012-07-05
申请号：PCT/US2011/066831
申请日：2011-12-22
申请人： VEECO INSTRUMENTS INC. , GURARY, Alexander, I. , BOGUSLAVSKIY, Vadim , KRISHNAN, Sandeep , KING, Matthew
发明人： GURARY, Alexander, I. , BOGUSLAVSKIY, Vadim , KRISHNAN, Sandeep , KING, Matthew
IPC分类号： G01J5/00
摘要： A method of in-situ pyrometer calibration for a wafer treatment reactor such as a CVD reactor 12 desirably includes the steps of positioning a calibrating pyrometer 80 at a first calibrating position A and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating a support element 40 about a rotational axis 42, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer 71 installed at a first operating position 1R, and obtaining first calibrating temperature measurements from the calibrating pyrometer 80. Both the calibrating pyrometer 80 and the first operating pyrometer 71 desirably are adapted to receive radiation from a first portion of the wafer support element 40 at a first radial distance D1 from the rotational axis 42 of the wafer support element.

4. 发明申请

WO2012092127A1 METHODS AND SYSTEMS FOR IN-SITU PYROMETER CALIBRATION 审中-公开
标题翻译：用于原位染色体校准的方法和系统
公开(公告)号：WO2012092127A1
公开(公告)日：2012-07-05
申请号：PCT/US2011066831
申请日：2011-12-22
申请人： VEECO INSTR INC , GURARY ALEXANDER I , BOGUSLAVSKIY VADIM , KRISHNAN SANDEEP , KING MATTHEW
发明人： GURARY ALEXANDER I , BOGUSLAVSKIY VADIM , KRISHNAN SANDEEP , KING MATTHEW
IPC分类号： G01J5/00
CPC分类号： G01J5/0003 , G01J5/0007 , G01J2005/0048
摘要： A method of in-situ pyrometer calibration for a wafer treatment reactor such as a CVD reactor 12 desirably includes the steps of positioning a calibrating pyrometer 80 at a first calibrating position A and heating the reactor until the reactor reaches a pyrometer calibration temperature. The method desirably further includes rotating a support element 40 about a rotational axis 42, and while the support element is rotating about the rotational axis, obtaining first operating temperature measurements from a first operating pyrometer 71 installed at a first operating position 1R, and obtaining first calibrating temperature measurements from the calibrating pyrometer 80. Both the calibrating pyrometer 80 and the first operating pyrometer 71 desirably are adapted to receive radiation from a first portion of the wafer support element 40 at a first radial distance D1 from the rotational axis 42 of the wafer support element.
摘要翻译：用于诸如CVD反应器12的晶片处理反应器的原位高温计校准的方法理想地包括将校准高温计80定位在第一校准位置A并加热反应器直到反应器达到高温计校准温度的步骤。该方法理想地还包括围绕旋转轴线42旋转支撑元件40，并且当支撑元件围绕旋转轴线旋转时，从安装在第一操作位置1R的第一操作高温计71获得第一操作温度测量值，并获得第一从校准高温计80校准温度测量值。理想地，校准高温计80和第一操作高温计71都适合于从晶片的旋转轴42以第一径向距离D1接收来自晶片支撑元件40的第一部分的辐射支持元素

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