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1. 发明申请

WO2012091540A1 INTEGRATED MICROFLUIDICS SENSOR 审中-公开
标题翻译：集成微流感传感器
公开(公告)号：WO2012091540A1
公开(公告)日：2012-07-05
申请号：PCT/MY2011/000152
申请日：2011-06-24
申请人： MIMOS BERHAD , LEE, Hing Wah , BIEN, Chia Sheng, Daniel
发明人： LEE, Hing Wah , BIEN, Chia Sheng, Daniel
IPC分类号： G01N27/414
CPC分类号： G01N27/4145
摘要： A FET-based sensor with integrated microfluidics components on opposite surfaces of the substrate for biological or chemical analysis with fluid manipulation capabilities. The FET-based sensors and microfluidic elements are embedded in a single chip and on a single substrate. The contact pads for the sensor are at the opposing side of the microfluidic components and sensing element. This will ensure that only components which need to be in contact with the fluid region will be exposed to the fluid boundary while the electrical and electronics components will inherently be protected from the fluid region. This eliminates the need for very reliable and leakage-free packaging material and technology traditionally required for segregation of the electrical components to the sensing and microfluidic regions.
摘要翻译：基于FET的传感器，其具有集成的微流体组件，用于在衬底的相对表面上，用于具有流体操纵能力的生物或化学分析。基于FET的传感器和微流体元件嵌入在单个芯片和单个基板上。传感器的接触垫位于微流体部件和感测元件的相对侧。这将确保仅需要与流体区域接触的部件将暴露于流体边界，同时电气和电子部件将固有地保护免受流体区域的影响。这消除了对于将电气部件分离到感测和微流体区域传统上所需的非常可靠和无泄漏的包装材料和技术的需要。

2. 发明申请

WO2011062471A3 DISPOSABLE PARAFFIN MICROVALVE FOR BIOMEDICAL APPLICATIONS 审中-公开
标题翻译：用于生物医学应用的Disposable PARAFFIN MICROVALVE
公开(公告)号：WO2011062471A3
公开(公告)日：2011-11-17
申请号：PCT/MY2010000237
申请日：2010-10-29
申请人： MIMOS BERHAD , LEE HING WAH , BIEN CHIA SHENG DANIEL
发明人： LEE HING WAH , BIEN CHIA SHENG DANIEL
IPC分类号： G01N35/08 , B01L3/00 , B01L7/00 , G01N1/44 , G01N33/48
CPC分类号： F16K99/0005 , B01L3/502738 , B01L2300/1827 , B01L2400/0677 , C08L2201/12 , F16K99/0001 , F16K99/003 , F16K99/0038
摘要： The present invention provides a microfluidic device (100) comprises an adapting unit; a microvalve (120) adapted to removably couple with the adapting unit, the microvalve (120) having a fluid path (124) and a heat sensitive plug (126), the heat sensitive plug (126) is disposed to block the fluid path (124), wherein the microvalve (120) is adapted to be normally-closed by default by the heat sensitive plug (126); and a heater (114) disposed on a position having a close proximity to the heat sensitive plug (126), wherein the heater (114) is operable to melt the heat sensitive plug (126). Once the heat sensitive plug (126) is molten to open the fluid path (124), the fluid path (124) is not re-closable and a replacement microvalve is required for a new use. A microvalve and a method of fabricating the same is also provided herewith.
摘要翻译：本发明提供一种微流体装置（100），包括适配单元; 适于可移除地与适配单元耦合的微型阀（120），所述微型阀（120）具有流体路径（124）和热敏塞（126），所述热敏塞（126）设置成阻挡流体路径 124），其中所述微型阀（120）默认地由所述热敏塞（126）常闭; 以及设置在紧邻热敏插塞（126）的位置上的加热器（114），其中加热器（114）可操作以熔化热敏插塞（126）。一旦热敏插塞（126）熔化以打开流体路径（124），则流体路径（124）不可重复关闭，并且需要更换微型阀来进行新的使用。本发明还提供微型阀及其制造方法。

3. 发明申请

WO2011096790A3 METHOD OF FABRICATING NANO-RESISTORS 审中-公开
标题翻译：制备纳米电阻的方法
公开(公告)号：WO2011096790A3
公开(公告)日：2011-11-10
申请号：PCT/MY2010000317
申请日：2010-12-13
申请人： MIMOS BERHAD , BIEN CHIA SHENG DANIEL , AZLINA MOHD ZAIN , LEE HING WAH
发明人： BIEN CHIA SHENG DANIEL , AZLINA MOHD ZAIN , LEE HING WAH
IPC分类号： H01L27/04
CPC分类号： H01L27/0802
摘要： The present invention describes a novel method of fabricating nano-resistors (22) which allows full integration with standard CMOS fabrication process. The resistor comprises long and thin nano-structures as resistive element. It is formed by conductive nano-spacers (18B) on insulating layer. An embodiment of such structure is polysilicon nano-structures doped or implanted with n-type or p-type ions (20) to improve material conductance. The electrical properties of the device will change with respect to the dimension of these nano-structures. Resistors with polysilicon nano-structures down to 10 nm can be produced with resulting measured resistance in the MOhm scale.
摘要翻译：本发明描述了一种制造纳米电阻器（22）的新方法，其允许与标准CMOS制造工艺的完全集成。电阻器包括长而薄的纳米结构作为电阻元件。它由绝缘层上的导电纳米间隔物（18B）形成。这种结构的实施例是掺杂或注入n型或p型离子（20）的多晶硅纳米结构，以改善材料电导率。器件的电学特性将相对于这些纳米结构的尺寸而变化。可以产生具有低至10nm的多晶硅纳米结构的电阻器，其中产生测量的电阻为莫尔刻度。

4. 发明申请

WO2011078651A2 METHOD FOR FABRICATING NANOWIRES 审中-公开
标题翻译：制备纳米微粒的方法
公开(公告)号：WO2011078651A2
公开(公告)日：2011-06-30
申请号：PCT/MY2010/000318
申请日：2010-12-13
申请人： MIMOS BERHAD , BIEN, Chia Sheng Daniel , RAHIMAH, Mohd Saman , SITI AISHAH, Mohamad Badaruddin
发明人： BIEN, Chia Sheng Daniel , RAHIMAH, Mohd Saman , SITI AISHAH, Mohamad Badaruddin
IPC分类号： B82B3/00 , B82B1/00
CPC分类号： B82Y30/00 , B82Y15/00 , C23C16/4418 , C23C16/56
摘要： The present invention provides the method for fabricating tungsten (24) and tungsten oxide (30) nanowires by selective CVD method process on a handle substrate (20) and insulating layer (22) with silicon nanostructure (28) in the presence tungsten hexafluoride precursor without the need to use of metal catalyst or mixed powder. This method uses an underlying silicon nano-structure material where the nanowires are laterally formed, in-planed with the substrate and also has uniform dimension. Tungsten nanowires fabricated can thereon be converted to tungsten oxides by oxidation or annealing process.
摘要翻译：本发明提供了在存在六氟化钨前体的情况下通过选择性CVD法在具有硅纳米结构（28）的手柄衬底（20）和绝缘层（22）上制造钨（24）和氧化钨（30）纳米线的方法，而没有需要使用金属催化剂或混合粉末。该方法使用下面的硅纳米结构材料，其中纳米线横向形成，与基底成平面且具有均匀的尺寸。其上制造的钨纳米线可通过氧化或退火工艺转化为钨氧化物。

5. 发明申请

WO2011078650A3 METHOD FOR FABRICATING NANOFLUIDIC CHANNELS 审中-公开
公开(公告)号：WO2011078650A3
公开(公告)日：2011-06-30
申请号：PCT/MY2010/000316
申请日：2010-12-13
申请人： MIMOS BERHAD , BIEN, Chia Sheng Daniel
发明人： BIEN, Chia Sheng Daniel
IPC分类号： G01N35/08 , G01N33/48 , B82B3/00
摘要： The present invention provides the method for fabricating nanofluidic channels (23) with a combination of the formation of silicon (22B) or oxide nanowires (22) on a handle substrate (20), layered with or without an insulating material together with wafer planarization techniques. The process provides a simple and practical solution for low cost fabrication of nanofluidic channel with well controlled dimensions where the resolution of the channels is dependent on the resolution of the nanowires instead of on the lithographic tool or type of resist used. This method is compatible with standard CMOS process allowing easy integration on the same platform with other nanofluidic devices and systems fabricated using similar methods.

6. 发明申请

WO2011078650A2 METHOD FOR FABRICATING NANOFLUIDIC CHANNELS 审中-公开
标题翻译：制备纳米通道的方法
公开(公告)号：WO2011078650A2
公开(公告)日：2011-06-30
申请号：PCT/MY2010000316
申请日：2010-12-13
申请人： MIMOS BERHAD , BIEN CHIA SHENG DANIEL
发明人： BIEN CHIA SHENG DANIEL
IPC分类号： G01N35/08 , B82B3/00 , G01N33/48
CPC分类号： B81C1/00071 , B01L3/502707 , B01L3/502761 , B01L2200/025 , B01L2200/0663 , B01L2300/0896 , B81B2201/058
摘要： The present invention provides the method for fabricating nanofluidic channels (23) with a combination of the formation of silicon (22B) or oxide nanowires (22) on a handle substrate (20), layered with or without an insulating material together with wafer planarization techniques. The process provides a simple and practical solution for low cost fabrication of nanofluidic channel with well controlled dimensions where the resolution of the channels is dependent on the resolution of the nanowires instead of on the lithographic tool or type of resist used. This method is compatible with standard CMOS process allowing easy integration on the same platform with other nanofluidic devices and systems fabricated using similar methods.
摘要翻译：本发明提供了一种制造纳米流体通道（23）的方法，其结合在手柄衬底（20）上形成硅（22B）或氧化物纳米线（22），层叠有绝缘材料或不带绝缘材料以及晶片平面化技术。该方法为具有良好控制尺寸的纳米流体通道的低成本制造提供了一种简单实用的解决方案，其中通道的分辨率取决于纳米线的分辨率而不是光刻工具或所使用的抗蚀剂类型。该方法与标准CMOS工艺兼容，允许在与使用类似方法制造的其他纳米流体装置和系统在同一平台上轻松集成。

7. 发明申请

WO2013066145A1 A MICROFLUIDIC SYSTEM AND METHOD THEREOF 审中-公开
标题翻译：微流控系统及其方法
公开(公告)号：WO2013066145A1
公开(公告)日：2013-05-10
申请号：PCT/MY2012/000156
申请日：2012-06-28
申请人： MIMOS BERHAD , LEE, Hing, Wah , BIEN, Chia, Sheng, Daniel
发明人： LEE, Hing, Wah , BIEN, Chia, Sheng, Daniel
IPC分类号： B01F5/06 , B01F5/12 , B01F13/00 , B01F15/02 , F04B43/04 , F16K99/00 , B01L3/00
CPC分类号： F16K99/0007 , B01F5/061 , B01F5/12 , B01F13/0059 , B01F15/026 , B01F15/0292 , B01F2005/0623 , B01F2005/0636 , B01L3/50273 , B01L3/502738 , B01L2300/0867 , B01L2400/0481 , B01L2400/0638 , F04B43/046 , F16K99/0028 , F16K99/0051
摘要： A microfluidic device (10) comprises a pumping unit having a pump chamber (15) includes an upper wall (15a), a bottom wall (15b), a first curved sidewall (15c) having at least two inlets (30a) and a second curved sidewall (15d) having at least two outlets (30b), wherein the first curved sidewall (15c) and the second curved sidewall (15d) are placed in an opposing manner; at least two inflow fluid channels (20a) connected to said at least two inlets (30a) of the pump chamber (15) for introduction of fluids into the chamber (15); at least two outflow fluid channels (20b) connected to said at least two outlets (30b) of the pump chamber (15) for withdrawal of fluid from the chamber (15); a plurality of mixer structures (25) provided within the cavity of the pump chamber (15) for homogenization of fluids; and a pair of electrostatic-driven membrane electrodes (35a, 35b) disposed within the chamber (15) and configured to manipulate fluid flow in the device.
摘要翻译：微流体装置（10）包括泵送单元，其具有泵室（15），其包括上壁（15a），底壁（15b），具有至少两个入口（30a）的第一弯曲侧壁（15c）具有至少两个出口（30b）的弯曲侧壁（15d），其中第一弯曲侧壁（15c）和第二弯曲侧壁（15d）以相对的方式放置; 至少两个连接到所述泵室（15）的所述至少两个入口（30a）的流入流体通道（20a），用于将流体引入所述腔室（15）中; 连接到所述泵室（15）的所述至少两个出口（30b）的至少两个流出流体通道（20b），用于从所述腔室（15）中取出流体; 多个混合器结构（25），设置在泵室（15）的空腔内，用于使流体均匀化; 以及一对静电驱动膜电极（35a，35b），其设置在所述腔室（15）内并且构造成操纵所述装置中的流体流动。

8. 发明申请

WO2012115503A1 AN APPARATUS FOR MIXING FLUIDS, A METHOD OF MIXING THE FLUIDS USING THE APPARATUS AND A METHOD OF FABRICATING THE APPARATUS 审中-公开
标题翻译：用于混合流体的装置，使用装置混合流体的方法和制造装置的方法
公开(公告)号：WO2012115503A1
公开(公告)日：2012-08-30
申请号：PCT/MY2012/000029
申请日：2012-02-20
申请人： MIMOS BERHAD , LEE, Hing Wah , BIEN, Chia Sheng Daniel
发明人： LEE, Hing Wah , BIEN, Chia Sheng Daniel
IPC分类号： B01F3/08 , B01F7/20
CPC分类号： B01F13/0059 , B01F3/0853 , B01F7/00116 , B01F7/00141 , B01F7/00258 , B01F7/00291 , B01F7/00916 , B01F7/18
摘要： The present invention is an apparatus (109) for mixing fluids, methods for performing fluids mixing and also methods of fabricating the apparatus (109) for mixing fluids. The apparatus (109) breaks the streamlines and increase the diffusion rate of fluids during the mixing process to achieve improved mixing of fluids.
摘要翻译：本发明是用于混合流体的装置（109），用于进行流体混合的方法，以及制造用于混合流体的装置（109）的方法。装置（109）在混合过程中打破流线并增加流体的扩散速率，以实现改进的流体混合。

9. 发明申请

WO2012057604A1 NANOSTRUCTURE-BASED PHOTOVOLTAIC CELL 审中-公开
标题翻译：基于纳米结构的光电池
公开(公告)号：WO2012057604A1
公开(公告)日：2012-05-03
申请号：PCT/MY2010/000289
申请日：2010-11-24
申请人： MIMOS BERHAD , TAN, Kai Sin , BIEN, Chia Sheng Daniel , LEE, Wai Yee
发明人： TAN, Kai Sin , BIEN, Chia Sheng Daniel , LEE, Wai Yee
IPC分类号： H01L31/042 , H01L31/06
CPC分类号： H01L31/035227 , H01L31/022425 , H01L31/02363 , H01L31/03529 , H01L31/0725 , Y02E10/50
摘要： The present invention provides a hybrid photovoltaic device that combines a base solar cell [20] of single or multi junction with nanostructures of nanowires or nanotubes p-n junction. The nanowire or nanotube p-n junction structures [22] are fabricated on top of metal collectors from the base solar cell [20] as an additional photovoltaic cell on top of the main cell. This allows full area utilization and subsequently improving the overall efficiency of the device with the capability to absorb and operate at more than one band gap energy. Optionally, additional nanowire arrays [24] could also be formed on the open areas of the base solar cell [20] for light-trapping effect to improve the optical absorption properties of the cell.
摘要翻译：本发明提供了一种混合光伏器件，其将单结或多结的基础太阳能电池[20]与纳米线或纳米管p-n结的纳米结构组合。纳米线或纳米管p-n结结构[22]在基底太阳能电池[20]的金属收集器顶部制造，作为主电池顶部的附加光伏电池。这允许全面利用并且随后提高器件的整体效率，具有吸收和操作多于一个带隙能量的能力。任选地，另外的纳米线阵列[24]也可以形成在基础太阳能电池[20]的开放区域上以获得光捕获效果，以改善电池的光学吸收性能。

10. 发明申请

WO2011078651A3 METHOD FOR FABRICATING NANOWIRES 审中-公开
标题翻译：制造纳米线的方法
公开(公告)号：WO2011078651A3
公开(公告)日：2011-11-24
申请号：PCT/MY2010000318
申请日：2010-12-13
申请人： MIMOS BERHAD , BIEN CHIA SHENG DANIEL , RAHIMAH MOHD SAMAN , SITI AISHAH MOHAMAD BADARUDDIN
发明人： BIEN CHIA SHENG DANIEL , RAHIMAH MOHD SAMAN , SITI AISHAH MOHAMAD BADARUDDIN
IPC分类号： B82B3/00 , B82B1/00
CPC分类号： B82Y30/00 , B82Y15/00 , C23C16/4418 , C23C16/56
摘要： The present invention provides the method for fabricating tungsten (24) and tungsten oxide (30) nanowires by selective CVD method process on a handle substrate (20) and insulating layer (22) with silicon nanostructure (28) in the presence tungsten hexafluoride precursor without the need to use of metal catalyst or mixed powder. This method uses an underlying silicon nano-structure material where the nanowires are laterally formed, in-planed with the substrate and also has uniform dimension. Tungsten nanowires fabricated can thereon be converted to tungsten oxides by oxidation or annealing process.
摘要翻译：本发明提供了在存在六氟化钨前体的情况下通过选择性CVD方法在具有硅纳米结构（28）的处理衬底（20）和绝缘层（22）上制造钨（24）和氧化钨（30）纳米线的方法，需要使用金属催化剂或混合粉末。该方法使用下面的硅纳米结构材料，其中纳米线横向形成，与衬底一起刨平并且尺寸均匀。制造的钨纳米线可以通过氧化或退火工艺转化为氧化钨。

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