专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2003091173A2 CAPPING LAYER FOR CRYSTALLIZING GERMANIUM, AND SUBSTRATE HAVING THIN CRYSTALLIZED GERMANIUM LAYER 审中-公开
标题翻译：用于晶体结晶的填料层和具有薄的结晶锗层的衬底
公开(公告)号：WO2003091173A2
公开(公告)日：2003-11-06
申请号：PCT/US2003/012335
申请日：2003-04-22
申请人： ASTROPOWER, INC. , MAUK, Michael
发明人： MAUK, Michael
IPC分类号： C03C
CPC分类号： H01L21/02667 , C04B41/009 , C04B41/515 , C04B41/52 , C04B41/88 , C04B41/89 , C04B2111/00844 , H01L21/02414 , H01L21/02532 , H01L21/2022 , Y10S438/933 , C04B41/0072 , C04B41/459 , C04B41/5155 , C04B35/10 , C04B35/00
摘要： A structure comprising at least one layer of germanium formed on a surface of a ceramic substrate. The layer of germanium has a thickness of not larger than 10 microns and includes grains having grain size of at least 0.05 mm. Also, a structure comprising at least one layer of germanium formed on a surface of a ceramic substrate, and at least one capping layer formed on a surface of the layer of germanium. Also, a method of forming a thin film germanium structure, comprising forming at least one layer of germanium on a surface of a ceramic substrate, then forming at least one capping layer on a surface of the layer of germanium, followed by heating and then cooling the layer of germanium.
摘要翻译：包括在陶瓷基板的表面上形成的至少一层锗的结构。锗层的厚度不大于10微米，并且包括晶粒尺寸至少为0.05毫米的晶粒。此外，包括在陶瓷基板的表面上形成的至少一层锗的结构以及形成在锗层的表面上的至少一个封盖层的结构。另外，形成薄膜锗结构体的方法包括在陶瓷基板的表面上形成至少一层锗，然后在锗层的表面上形成至少一个覆盖层，然后加热然后冷却锗层。

2. 发明申请

WO2004030044A3 METHODS AND SYSTEMS FOR PURIFYING ELEMENTS 审中-公开
公开(公告)号：WO2004030044A3
公开(公告)日：2004-04-08
申请号：PCT/US2003/030659
申请日：2003-09-26
申请人： ASTROPOWER, INC. , HALL, Robert, B. , KENDALL, Scott, L. , RAND, James, A. , SIMS, Paul, E.
发明人： HALL, Robert, B. , KENDALL, Scott, L. , RAND, James, A. , SIMS, Paul, E.
IPC分类号： C01B33/02
摘要： There are provided methods of purifying a material, comprising melting solid material to form liquefied material, directionally solidifying a portion of the liquefied material; and removing a liquid remainder from the purified solidified material. Preferably, the purified solidified material is melted to form re-liquefied purified material, and re-liquefied purified material is removed. Preferably, the material is positioned in a container as it is being purified. The method is particularly useful for purifying elemental material, e.g., semiconductor material such as silicon and/or germanium, such as recycle scrap silicon and/or metallurgical grade silicon. There are also provided systems for carrying out such methods.

3. 发明申请

WO03036685A3 METHOD AND APPARATUS FOR APPLYING CONDUCTIVE INK ONTO SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：用于将导电墨水应用于半导体基板的方法和装置
公开(公告)号：WO03036685A3
公开(公告)日：2003-12-11
申请号：PCT/US0223731
申请日：2002-07-26
申请人： ASTROPOWER INC , CULIK JEROME S , RILEY SHAWN P , FALLER FRANK R , ALLISON KEVIN W
发明人： CULIK JEROME S , RILEY SHAWN P , FALLER FRANK R , ALLISON KEVIN W
IPC分类号： B05C1/00 , B05D5/00 , H01L21/00 , H01L21/20 , H01L21/44 , H01L31/0224 , H05K1/09 , H05K3/40 , B05C1/02 , B05C1/08 , B05D5/12 , B41F9/01
CPC分类号： H01L31/022425 , H01L21/67144 , H05K1/092 , H05K3/403 , Y02E10/50
摘要： A method and apparatus for applying contacts to a semiconductor substrate, comprising one or more applicator rolls (11). Each applicator roll comprises a printing surface which has at least one raised pattern surface (18). Each raised first pattern surface is positioned such that upon rotation of the first rotatable applicator roll, it passes through a printing space (15). As a result, a surface of a semiconductor substrate (16) passing through the printing space while the raised pattern surface(s) is covered with a conductive ink and the applicator roll is being rotated comes into contact with the conductive ink on at least part of the raised pattern surface, and does not come into contact with conductive ink on substantially any of the printing surface other than the raised pattern surface. Accordingly, a conductive ink pattern is deposited on the semiconductor substrate surface. In a preferred aspect, the conductive ink is a hot melt ink.
摘要翻译：一种用于将接触件施加到半导体衬底的方法和装置，包括一个或多个施加辊（11）。每个涂布辊包括具有至少一个凸起图案表面（18）的印刷表面。每个凸起的第一图案表面被定位成使得当第一可旋转涂布辊旋转时，其穿过打印空间（15）。结果，当凸起图案表面被导电油墨覆盖并且施加辊被旋转时，通过打印空间的半导体衬底（16）的表面在至少部分地与导电油墨接触的凸起图案表面，并且在除凸起图案表面之外的基本上任何印刷表面上不与导电油墨接触。因此，导电油墨图案沉积在半导体衬底表面上。在优选的方面，导电油墨是热熔油墨。

4. 发明申请

WO2003083175A2 METHOD AND APPARATUS FOR ELECTROCHEMICAL PROCESSING 审中-公开
标题翻译：电化学处理方法与装置
公开(公告)号：WO2003083175A2
公开(公告)日：2003-10-09
申请号：PCT/US2003/009596
申请日：2003-03-28
申请人： ASTROPOWER, INC. , SULIMA, Oleg
发明人： SULIMA, Oleg
IPC分类号： C25B
CPC分类号： H01L31/02168 , C25D5/02 , H01L21/02178 , H01L21/02233 , H01L21/02238 , H01L21/02241 , H01L21/02258 , H01L21/28264 , H01L21/31679 , H01L31/1844 , H01L31/1868 , Y02E10/544 , Y02P70/521
摘要： A method of electrochemically processing an article having a semi-insulating element and a conducting element comprises forming a conductive layer on the article, the conductive layer comprising at least a first region covering at least a portion of the semi-insulating element and a second region covering at least a portion of the conducting element; gripping with at least one conductive gripper a portion of the first region; submerging at least a portion of the second region in an electrolyte while keeping the conductive gripper out of said electrolyte; and conducting current through a circuit comprising the conducting element, the conductive layer, the conductive gripper, and an electrode submerged in the electrolyte. The conductive layer is preferably formed by diffusing a dopant from a vapor phase.
摘要翻译：一种电化学处理具有半绝缘元件和导电元件的制品的方法包括在所述制品上形成导电层，所述导电层至少包括覆盖半绝缘元件的至少一部分的第一区域和第二区域覆盖所述导电元件的至少一部分; 用至少一个导电夹持器夹持第一区域的一部分; 将导电夹持器保持在所述电解质外，将电解质中的第二区域的至少一部分浸入; 并且通过包括导电元件，导电层，导电夹持器和浸没在电解质中的电极的电路传导电流。导电层优选通过从气相扩散掺杂剂而形成。

5. 发明申请

WO2003036685A2 METHOD AND APPARATUS FOR APPLYING CONDUCTIVE INK ONTO SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：用于将导电墨水应用于半导体基板的方法和装置
公开(公告)号：WO2003036685A2
公开(公告)日：2003-05-01
申请号：PCT/US2002/023731
申请日：2002-07-26
申请人： ASTROPOWER, INC. , CULIK, Jerome, S. , RILEY, Shawn, P. , FALLER, Frank, R. , ALLISON, Kevin, W.
发明人： CULIK, Jerome, S. , RILEY, Shawn, P. , FALLER, Frank, R. , ALLISON, Kevin, W.
IPC分类号： H01L
CPC分类号： H01L31/022425 , H01L21/67144 , H05K1/092 , H05K3/403 , Y02E10/50
摘要： A method and apparatus for applying contacts to a semiconductor substrate, comprising one or more applicator rolls. Each applicator roll comprises a printing surface which has at least one raised pattern surface. Each raised first pattern surface is positioned such that upon rotation of the first rotatable applicator roll, it passes through a printing space. As a result, a surface of a semiconductor substrate passing through the printing space while the raised pattern surface(s) is covered with a conductive ink and the applicator roll is being rotated comes into contact with the conductive ink on at least part of the raised pattern surface, and does not come into contact with conductive ink on substantially any of the printing surface other than the raised pattern surface. Accordingly, a conductive ink pattern is deposited on the semiconductor substrate surface. In a preferred aspect, the conductive ink is a hot melt ink.
摘要翻译：一种用于将接触件施加到半导体衬底的方法和装置，包括一个或多个施加辊。每个涂布辊包括具有至少一个凸起图案表面的印刷表面。每个凸起的第一图案表面被定位成使得当第一可旋转涂布辊旋转时，其穿过打印空间。结果，当凸起图案表面被导电油墨覆盖并且施加辊旋转时，半导体衬底的通过打印空间的表面在至少部分凸起的状态下与导电油墨接触图案表面，并且在与凸起图案表面以外的基本上任何印刷表面上不与导电油墨接触。因此，导电油墨图案沉积在半导体衬底表面上。在优选的方面，导电油墨是热熔油墨。

6. 发明申请

WO2004030044A2 METHODS AND SYSTEMS FOR PURIFYING ELEMENTS 审中-公开
标题翻译：净化元素的方法和系统
公开(公告)号：WO2004030044A2
公开(公告)日：2004-04-08
申请号：PCT/US0330659
申请日：2003-09-26
申请人： ASTROPOWER INC , HALL ROBERT B , KENDALL SCOTT L , RAND JAMES A , SIMS PAUL E
发明人： HALL ROBERT B , KENDALL SCOTT L , RAND JAMES A , SIMS PAUL E
IPC分类号： C01B33/02 , C01B33/039 , H01L20060101 , H01L
CPC分类号： C01B33/037 , C01B33/039 , C30B11/00 , C30B13/00 , C30B15/00 , C30B29/06
摘要： There are provided methods of purifying a material, comprising melting solid material to form liquefied material, directionally solidifying a portion of the liquefied material; and removing a liquid remainder from the purified solidified material. Preferably, the purified solidified material is melted to form re-liquefied purified material, and re-liquefied purified material is removed. Preferably, the material is positioned in a container as it is being purified. The method is particularly useful for purifying elemental material, e.g., semiconductor material such as silicon and/or germanium, such as recycle scrap silicon and/or metallurgical grade silicon. There are also provided systems for carrying out such methods.
摘要翻译：提供了净化材料的方法，包括熔化固体材料以形成液化材料，定向凝固液化材料的一部分; 并从纯化的固化材料中除去液体剩余物。优选地，将纯化的固化材料熔化以形成再液化的纯化材料，并且除去再液化的纯化材料。优选地，当材料被净化时，将其定位在容器中。该方法特别可用于纯化元素材料，例如诸如硅和/或锗的半导体材料，例如再循环废料硅和/或冶金级硅。还提供了用于执行这种方法的系统。

7. 发明申请

WO2004012257A1 METHOD AND APPARATUS FOR MANUFACTURING NET SHAPE SEMICONDUCTOR WAFERS 审中-公开
标题翻译：用于制造网状半导体晶体管的方法和装置
公开(公告)号：WO2004012257A1
公开(公告)日：2004-02-05
申请号：PCT/US2003/023401
申请日：2003-07-25
申请人： ASTROPOWER, INC. , JONCZYK, Ralf , KENDALL, Scott, L , RAND, James, A
发明人： JONCZYK, Ralf , KENDALL, Scott, L , RAND, James, A
IPC分类号： H01L21/36
CPC分类号： H01L21/67109 , C30B11/002 , C30B13/00 , C30B29/06 , H01L29/0657 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S438/906 , Y10S438/958
摘要： There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter (80), moving the setter through a heating/cooling region to subject the semiconductor material (89) to a temperature profile, and removing a wafer from the recess. The size and shape of the wafer are substantially equal to the size of the wafer when it is used. As a result, the wafer can be fabricated in any desired shape and with any of a variety of surface structural features and/or internal structural features. The temperature profile can be closely controlled, enabling production of wafers having structural features not previously obtainable. There are also provided wafers formed by such methods and setters for use in such methods.
摘要翻译：提供了一种制造晶片的方法，包括将半导体材料沉积到固定器（80）中的凹槽中，使设置器通过加热/冷却区域移动以使半导体材料（89）达到温度分布，并且去除晶片从休息。当使用晶片时，晶片的尺寸和形状基本上等于晶片的尺寸。结果，晶片可以以任何期望的形状和各种表面结构特征和/或内部结构特征中的任一种制造。可以严格控制温度曲线，使得能够生产具有以前不可获得的结构特征的晶片。还提供了通过这种方法和设置器形成的用于这种方法的晶片。

8. 发明申请

WO2003090002A1 MAXIMUM POWER SENSOR FOR PHOTOVOLTAIC SYSTEM 审中-公开
标题翻译：用于光伏系统的最大功率传感器
公开(公告)号：WO2003090002A1
公开(公告)日：2003-10-30
申请号：PCT/US2002/025872
申请日：2002-08-13
申请人： ASTROPOWER, INC. , SCHRIPSEMA, Jason , JOHNSTON, Michael, Antony , HOLMES, Alysha
发明人： SCHRIPSEMA, Jason , JOHNSTON, Michael, Antony , HOLMES, Alysha
IPC分类号： G05F1/40
CPC分类号： G05F1/67 , Y02E10/58 , Y10S323/906
摘要： A maximum power level sensor and method for reliably providing instantaneous estimates of maximum power level for a photovoltaic system including one or more photovoltaic cells under prevailing conditions of irradiance, array temperature and spectrum of sunlight. The maximum power level sensor produces a reference voltage signal which is proportional to the maximum power level of the photovoltaic system. The maximum power level sensor comprises a reference circuit including at least one reference photovoltaic cell and a thermistor network in parallel with the reference cell. The thermistor network comprises at least one negative temperature coefficient thermistor, at least one resistor in parallel with the thermistor, and at least one resistor in series with the thermistor and the parallel resistor. The thermistor is positioned in or on the photovoltaic array. The reference cell is preferably constructed of materials which are similar to those of the photovoltaic cells in the photovoltaic system.
摘要翻译：一种最大功率电平传感器和方法，用于在主要的辐照条件，阵列温度和太阳光谱条件下可靠地提供包括一个或多个光伏电池的光伏系统的最大功率电平的瞬时估计。最大功率电平传感器产生与光伏系统的最大功率电平成比例的参考电压信号。最大功率电平传感器包括参考电路，该参考电路包括与参考电池并联的至少一个参考光伏电池和热敏电阻网络。热敏电阻网络包括至少一个负温度系数热敏电阻，至少一个与热敏电阻并联的电阻器，以及至少一个与热敏电阻器和并联电阻器串联的电阻器。热敏电阻位于光伏阵列中或其上。参考单元优选地由与光伏系统中的光伏电池类似的材料构成。

9. 发明申请

WO2003017724A2 POWER AND/OR ENERGY MONITOR, METHOD OF USING, AND DISPLAY DEVICE 审中-公开
标题翻译：电源和/或能量监测器，使用方法和显示装置
公开(公告)号：WO2003017724A2
公开(公告)日：2003-02-27
申请号：PCT/US2002/025876
申请日：2002-08-13
申请人： ASTROPOWER, INC. , SCHRIPSEMA, Jason , CULIK, Jerome, S. , MROHS, Mark , BARNETT, Allen
发明人： SCHRIPSEMA, Jason , CULIK, Jerome, S. , MROHS, Mark , BARNETT, Allen
IPC分类号： H05B1/02
CPC分类号： G01R22/06 , G01D4/004 , G01R21/06 , Y02B70/346 , Y02B90/242 , Y02B90/246 , Y02B90/248 , Y04S20/322 , Y04S20/42 , Y04S20/46 , Y04S20/52 , Y04S20/525 , Y10T307/62 , Y10T307/647 , Y10T307/696
摘要： There are provided monitors which sense a magnitude of power (and/or energy) being consumed by a facility and which sense a magnitude of power (and/or energy) being produced by at least one energy-producing system. There are provided facilities comprising at least one main panel bus, at least one external power line, at least one energy-producing system, at least one critical load sub-panel bus and at least one monitor which senses a magnitude of power (and/or energy) being consumed by the facility and a magnitude of power (and/or energy) being produced by the at least one energy-producing system. There are provided methods of monitoring power (and/or energy) consumed and power (and/or energy) produced in a facility, and devices which display magnitude of power (and/or energy) being consumed and magnitude of power (and/or energy) being produced in a battery.
摘要翻译：提供了监测器，其感测由设施消耗的功率（和/或能量）的大小，并且感测由至少一个能量产生系统产生的功率（和/或能量）的大小。提供的设施包括至少一个主面板总线，至少一个外部电源线，至少一个能量产生系统，至少一个关键负载子面板总线和至少一个感测功率大小（和/ 或能量）以及由至少一个能量产生系统产生的功率（和/或能量）的大小。提供了监测在设施中产生的功率（和/或能量）消耗和功率（和/或能量）的监测方法，以及显示消耗的功率（和/或能量）的大小和功率的大小（和/或能量）在电池中产生。

10. 发明申请

WO2004012257A9 METHOD AND APPARATUS FOR MANUFACTURING NET SHAPE SEMICONDUCTOR WAFERS 审中-公开
标题翻译：用于制造净形状半导体晶片的方法和设备
公开(公告)号：WO2004012257A9
公开(公告)日：2004-03-11
申请号：PCT/US0323401
申请日：2003-07-25
申请人： ASTROPOWER INC , JONCZYK RALF , KENDALL SCOTT L , RAND JAMES A
发明人： JONCZYK RALF , KENDALL SCOTT L , RAND JAMES A
IPC分类号： C30B11/00 , C30B13/00 , C30B29/64 , H01L21/00 , H01L29/06 , H01L31/0236 , H01L31/18 , H01L21/36 , C30B28/02 , H01L29/12 , H01L29/30
CPC分类号： H01L21/67109 , C30B11/002 , C30B13/00 , C30B29/06 , H01L29/0657 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S438/906 , Y10S438/958
摘要： There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter (80), moving the setter through a heating/cooling region to subject the semiconductor material (89) to a temperature profile, and removing a wafer from the recess. The size and shape of the wafer are substantially equal to the size of the wafer when it is used. As a result, the wafer can be fabricated in any desired shape and with any of a variety of surface structural features and/or internal structural features. The temperature profile can be closely controlled, enabling production of wafers having structural features not previously obtainable. There are also provided wafers formed by such methods and setters for use in such methods.
摘要翻译：提供了一种制造晶片的方法，该方法包括：将半导体材料沉积到设置器（80）中的凹槽中，使该设定器移动通过加热/冷却区域以使半导体材料（89）经受温度分布，并且移除晶片从休息室。晶片的尺寸和形状基本上等于晶片使用时的尺寸。结果，晶片可以制造成任何期望的形状并且具有各种表面结构特征和/或内部结构特征中的任何一种。温度分布可以被严密控制，使得能够制造具有之前无法获得的结构特征的晶片。还提供了由这种方法形成的晶片和用于这种方法的设置器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式