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1. 发明申请

WO2005013377A1 SEMICONDUCTOR ELEMENTS HAVING ZONES OF REDUCED OXYGEN 审中-公开
标题翻译：具有减少氧区的半导体元件
公开(公告)号：WO2005013377A1
公开(公告)日：2005-02-10
申请号：PCT/US2004/023869
申请日：2004-07-26
申请人： GE ENERGY (USA) LLC , JONCZYK, Ralf , KENDALL, Scott L. , RAND, James A.
发明人： JONCZYK, Ralf , KENDALL, Scott L. , RAND, James A.
IPC分类号： H01L31/0352
CPC分类号： H01L31/1804 , H01L31/02363 , H01L31/028 , H01L31/182 , H01L31/1864 , H01L31/1872 , H01L31/1876 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： There is provided a structure comprising semiconductor material (600), the structure having at least one zone of reduced oxygen concentration, such zone having an interstitial oxygen concentration of not greater than 3 x 10 17 oxygen atoms/cm 3 , such zone extending at least 75 microns in depth from a first major surface. There is further provided a photovoltaic cell comprising at least one such structure.
摘要翻译：提供了包括半导体材料（600）的结构，该结构具有至少一个氧浓度降低的区域，该区域的间隙氧浓度不大于3×10 17氧原子/ cm 3，这样的区域从第一主表面深度延伸至少75微米。还提供了包括至少一个这样的结构的光伏电池。

2. 发明申请

WO2004012257A9 METHOD AND APPARATUS FOR MANUFACTURING NET SHAPE SEMICONDUCTOR WAFERS 审中-公开
标题翻译：用于制造净形状半导体晶片的方法和设备
公开(公告)号：WO2004012257A9
公开(公告)日：2004-03-11
申请号：PCT/US0323401
申请日：2003-07-25
申请人： ASTROPOWER INC , JONCZYK RALF , KENDALL SCOTT L , RAND JAMES A
发明人： JONCZYK RALF , KENDALL SCOTT L , RAND JAMES A
IPC分类号： C30B11/00 , C30B13/00 , C30B29/64 , H01L21/00 , H01L29/06 , H01L31/0236 , H01L31/18 , H01L21/36 , C30B28/02 , H01L29/12 , H01L29/30
CPC分类号： H01L21/67109 , C30B11/002 , C30B13/00 , C30B29/06 , H01L29/0657 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S438/906 , Y10S438/958
摘要： There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter (80), moving the setter through a heating/cooling region to subject the semiconductor material (89) to a temperature profile, and removing a wafer from the recess. The size and shape of the wafer are substantially equal to the size of the wafer when it is used. As a result, the wafer can be fabricated in any desired shape and with any of a variety of surface structural features and/or internal structural features. The temperature profile can be closely controlled, enabling production of wafers having structural features not previously obtainable. There are also provided wafers formed by such methods and setters for use in such methods.
摘要翻译：提供了一种制造晶片的方法，该方法包括：将半导体材料沉积到设置器（80）中的凹槽中，使该设定器移动通过加热/冷却区域以使半导体材料（89）经受温度分布，并且移除晶片从休息室。晶片的尺寸和形状基本上等于晶片使用时的尺寸。结果，晶片可以制造成任何期望的形状并且具有各种表面结构特征和/或内部结构特征中的任何一种。温度分布可以被严密控制，使得能够制造具有之前无法获得的结构特征的晶片。还提供了由这种方法形成的晶片和用于这种方法的设置器。

3. 发明申请

WO2004012257A1 METHOD AND APPARATUS FOR MANUFACTURING NET SHAPE SEMICONDUCTOR WAFERS 审中-公开
标题翻译：用于制造网状半导体晶体管的方法和装置
公开(公告)号：WO2004012257A1
公开(公告)日：2004-02-05
申请号：PCT/US2003/023401
申请日：2003-07-25
申请人： ASTROPOWER, INC. , JONCZYK, Ralf , KENDALL, Scott, L , RAND, James, A
发明人： JONCZYK, Ralf , KENDALL, Scott, L , RAND, James, A
IPC分类号： H01L21/36
CPC分类号： H01L21/67109 , C30B11/002 , C30B13/00 , C30B29/06 , H01L29/0657 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S438/906 , Y10S438/958
摘要： There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter (80), moving the setter through a heating/cooling region to subject the semiconductor material (89) to a temperature profile, and removing a wafer from the recess. The size and shape of the wafer are substantially equal to the size of the wafer when it is used. As a result, the wafer can be fabricated in any desired shape and with any of a variety of surface structural features and/or internal structural features. The temperature profile can be closely controlled, enabling production of wafers having structural features not previously obtainable. There are also provided wafers formed by such methods and setters for use in such methods.
摘要翻译：提供了一种制造晶片的方法，包括将半导体材料沉积到固定器（80）中的凹槽中，使设置器通过加热/冷却区域移动以使半导体材料（89）达到温度分布，并且去除晶片从休息。当使用晶片时，晶片的尺寸和形状基本上等于晶片的尺寸。结果，晶片可以以任何期望的形状和各种表面结构特征和/或内部结构特征中的任一种制造。可以严格控制温度曲线，使得能够生产具有以前不可获得的结构特征的晶片。还提供了通过这种方法和设置器形成的用于这种方法的晶片。

4. 发明申请

WO2010104838A1 METHODS AND APPARATI FOR MAKING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL 审中-公开
标题翻译：用于制备薄膜半导体体的方法和装置
公开(公告)号：WO2010104838A1
公开(公告)日：2010-09-16
申请号：PCT/US2010/026639
申请日：2010-03-09
申请人： 1366 TECHNOLOGIES INC. , SACHS, Emanuel, M. , WALLACE, Richard, L. , HANTSOO, Eerik, T. , LORENZ, Adam, M. , HUDELSON, G. D., Stephen , JONCZYK, Ralf
发明人： SACHS, Emanuel, M. , WALLACE, Richard, L. , HANTSOO, Eerik, T. , LORENZ, Adam, M. , HUDELSON, G. D., Stephen , JONCZYK, Ralf
IPC分类号： C30B15/00 , C03B19/02
CPC分类号： B29C33/44 , C30B11/007 , C30B15/30 , C30B19/068 , C30B28/04 , C30B29/06
摘要： A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.
摘要翻译：在模板上施加压差，并在其上形成半导体（例如硅）晶片。压差的放松允许晶片的释放。模具片可以比熔体更冷。几乎完全通过成形晶片的厚度提取热量。液体和固体界面基本上平行于模片。凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。模板必须允许气体流过它。可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。可以通过许多方法控制晶粒尺寸。

5. 发明申请

WO2012075306A3 MAKING SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL USING A FREE-STANDING INTERPOSER SHEET 审中-公开
标题翻译：使用自由插入片材制作材料的半导体器件
公开(公告)号：WO2012075306A3
公开(公告)日：2013-07-25
申请号：PCT/US2011062914
申请日：2011-12-01
申请人： 1366 TECHNOLOGIES INC , JONCZYK RALF , SACHS EMANUEL M
发明人： JONCZYK RALF , SACHS EMANUEL M
IPC分类号： H01L21/02 , C30B19/02
CPC分类号： H01L31/182 , C04B41/4539 , C04B41/5096 , C30B11/002 , C30B15/00 , C30B15/007 , C30B15/32 , C30B29/06 , H01L21/02002 , H01L21/02532 , H01L31/1804 , Y02E10/546 , Y02P70/521
摘要： Interposer sheet for making silicon solar semiconductor bodies. Interposer is free-standing, thin, flexible, porous and withstands chemical/thermal environment of molten semiconductor without degradation. Interposer is of ceramic material, such as silica, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbide, silicon carbonitride, silicon oxycarbonitride and others. Provided between a forming surface of a mold sheet, and the molten material from which a semiconductor body will be formed. Secured to the forming surface or deposited upon the melt. Interposer suppresses grain nucleation, and limits heat flow from the melt, promotes separation of the semiconductor body from the forming surface, prefabricated before use. Because free-standing and not adhered to the forming surface, problems of mismatch of CTE are minimized. Interposer and semiconductor body are free to expand and contract relatively independently of the forming surface.
摘要翻译：制造硅太阳能半导体器件的插入片。中间层是独立的，薄的，柔性的，多孔的并且耐受熔融半导体的化学/热环境而不降解。中间体是陶瓷材料，例如二氧化硅，氮化硅，氮氧化硅，碳氧化硅，碳化硅，碳氮化硅，碳氮氧化硅等。在模板的成形表面和将形成半导体本体的熔融材料之间。固定在成型表面上或沉积在熔体上。中间层抑制晶粒成核，并限制来自熔体的热流，促进半导体本体与成形表面的分离，在使用前预制。由于独立且不粘附到成型表面，CTE的失配问题被最小化。内插器和半导体主体可以独立于成形表面自由地膨胀和收缩。

6. 发明申请

WO2012075306A2 MAKING SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL USING A FREE-STANDING INTERPOSER SHEET 审中-公开
标题翻译：使用自由插入片材制作材料的半导体器件
公开(公告)号：WO2012075306A2
公开(公告)日：2012-06-07
申请号：PCT/US2011/062914
申请日：2011-12-01
申请人： 1366 TECHNOLOGIES INC. , JONCZYK, Ralf , SACHS, Emanuel, M.
发明人： JONCZYK, Ralf , SACHS, Emanuel, M.
IPC分类号： H01L21/28
CPC分类号： H01L31/182 , C04B41/4539 , C04B41/5096 , C30B11/002 , C30B15/00 , C30B15/007 , C30B15/32 , C30B29/06 , H01L21/02002 , H01L21/02532 , H01L31/1804 , Y02E10/546 , Y02P70/521
摘要： An interposer sheet can be used for making semiconductor bodies, such as of silicon, such as for solar cell use. It is free-standing, very thin, flexible, porous and able to withstand the chemical and thermal environment of molten semiconductor without degradation. It is typically of a ceramic material, such as silica, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbide, silicon carbonitride, silicon oxycarbonitride and others. It is provided between a forming surface of a mold sheet, and the molten material from which a semiconductor body will be formed. It may be secured to the forming surface or deposited upon the melt. The interposer sheet suppresses grain nucleation, and limits heat flow from the melt. It promotes separation of the semiconductor body from the forming surface. It can be fabricated before its use. Because free-standing and not adhered to the forming surface, problems of mismatch of CTE are minimized. The interposer sheet and semiconductor body are free to expand and contract relatively independently of the forming surface.
摘要翻译：插入片可用于制造诸如硅的半导体本体，例如用于太阳能电池。它是独立的，非常薄的，柔性的，多孔的并且能够耐受熔融半导体的化学和热环境而不降解。它通常是陶瓷材料，例如二氧化硅，氮化硅，氮氧化硅，碳氧化硅，碳化硅，碳氮化硅，碳氮氧化硅等。设置在模板的成形表面和将形成半导体本体的熔融材料之间。它可以固定到成形表面或沉积在熔体上。插入片抑制晶粒成核，并限制来自熔体的热流。它促进半导体主体与成形表面的分离。它可以在使用之前进行制造。由于独立且不粘附到成型表面，CTE的失配问题被最小化。插入片和半导体本体相对于成形表面相对自由地膨胀和收缩。

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