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1. 发明申请

WO2018049134A1 POLYCRYSTALLINE TEXTURED MATERIALS EXHIBITING HETEROGENEOUS TEMPLATED GRAIN GROWTH, METHODS OF FORMING THE SAME, AND RELATED SYSTEMS 审中-公开
标题翻译：显示非均匀模板晶格生长的多晶结构材料，形成它们的方法以及相关系统
公开(公告)号：WO2018049134A1
公开(公告)日：2018-03-15
申请号：PCT/US2017/050643
申请日：2017-09-08
申请人： BRIGHAM YOUNG UNIVERSITY
发明人： JOHNSON, Oliver Kent , FRANDSEN, Dallin James
IPC分类号： C04B35/64 , C04B35/626 , C30B28/02
CPC分类号： C30B28/02 , C04B35/622 , C04B35/626 , C04B35/6303 , C04B35/64 , C04B2235/5292 , C04B2235/5296 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/602 , C04B2235/604 , C04B2235/6567 , C04B2235/6581 , C04B2235/77 , C04B2235/78 , C04B2235/781 , C04B2235/783 , C04B2235/785 , C04B2235/786 , C04B2235/787
摘要： Embodiments disclosed herein are related to polycrystalline textured materials exhibiting heterogeneous templated grain growth, methods of forming such materials, and related systems. An example of a method of forming a polycrystalline textured material exhibiting heterogeneous templated grain growth includes providing a plurality of seeds. The method also includes aligning at least some of the plurality of seeds (e.g., single-crystal seeds) so that a selected crystallographic orientation of at least some of the plurality of seeds are substantially aligned with each other. Additionally, the method includes positioning the plurality of seeds in a powder matrix. The method then includes pressing the plurality of seeds and the powdered matrix to form a green body. Further, the method includes sintering the green body at a temperature that is sufficient to grow a plurality of grains from corresponding ones of the plurality of seeds to form the polycrystalline textured material.
摘要翻译：这里公开的实施方式涉及显示非均相模板化晶粒生长的多晶织构材料，形成这种材料的方法以及相关系统。形成表现出异质模板化晶粒生长的多晶织构材料的方法的实例包括提供多个晶种。该方法还包括对齐多个种子中的至少一些（例如，单晶种子），使得多个种子中的至少一些种子的选定结晶学取向基本上彼此对齐。另外，该方法包括将多个种子定位在粉末基质中。该方法然后包括压制多个种子和粉末状基质以形成生坯。此外，该方法包括在足以从多个晶种中的相应晶种生长多个晶粒以形成多晶织构材料的温度下烧结生坯。

2. 发明申请

WO2019119513A1 一类非线性光学晶体单氟磷酸盐审中-公开
公开(公告)号：WO2019119513A1
公开(公告)日：2019-06-27
申请号：PCT/CN2017/119815
申请日：2017-12-29
申请人：北京师范大学
发明人：吴立明 , 陈玲 , 陈洁 , 熊琳 , 陆静 , 连宇坤 , 潘春亚
IPC分类号： C30B29/14 , C30B28/02 , G02F1/355
摘要：涉及一类非线性光学晶体，具体涉及一类深紫外非线性光学晶体单氟磷酸盐。首次使用单氟磷酸盐晶体作为深紫外非线性光学晶体，该类晶体是一类全新的非线性光学材料。所述晶体表现出优异的光学性能，具有较大的非线性响应、较大的极化率(高达25.6)和较宽的透明范围，能够实现相位匹配，具有较大带隙(带隙均大于6.5eV)，较高的倍频系数，较高的双折射率，可以作为一类性能较好的深紫外非线性光学晶体。

3. 发明申请

WO2005086962A2 SYSTEM AND METHOD FOR FABRICATING A CRYSTALLINE THIN STRUCTURE 审中-公开
标题翻译：用于制造晶体薄膜结构的系统和方法
公开(公告)号：WO2005086962A2
公开(公告)日：2005-09-22
申请号：PCT/US2005008237
申请日：2005-03-11
申请人： UNIV VERMONT , HEADRICK RANDALL L
发明人： HEADRICK RANDALL L
IPC分类号： B32B9/04 , C30B1/00 , C30B3/00 , C30B5/00 , C30B28/02 , H01L51/00 , H01L51/40
CPC分类号： H01L51/0003 , C30B7/00 , C30B7/005 , C30B29/54 , H01L51/0052 , H01L51/0054
摘要： A crystalline thin structure (104, 204, 404) is grown on a surface (108, 228) of a substrate (112, 208, 400) by depositing molecules (136, 220) from a molecular precursor to a lateral growth front (144, 224) of the structure using a crystal grower (116, 200). In one embodiment, the crystal grower comprises a solution (124) containing the molecular precursor in a solvent (140). Molecules are added to the lateral growth front by moving one or both of the free surface (120, 120') of the solution and deposition surface relative to the other at a predetermined rate. In another embodiment, the crystal grower comprises a mask (212) that includes at least one opening (216). Precursor molecules are vacuum deposited via a molecular beam (236) at the growth front (228) of the crystalline thin structure (204) as one or both of the opening and surface are moved relative to the other at a predetermined rate.
摘要翻译：通过从分子前体沉积到侧向生长前沿的分子（136,220），在衬底（112,208,400）的表面（108,228）上生长晶体薄结构（104,204,404），224）使用晶体栽植者（116,200）的结构。在一个实施方案中，晶体生长器包含在溶剂（140）中含有分子前体的溶液（124）。通过以预定的速率相对于另一个移动溶液和沉积表面的自由表面（120,120'）中的一个或两个来将分子添加到横向生长前沿。在另一个实施例中，晶体生长器包括包括至少一个开口（216）的掩模（212）。当晶体薄结构（204）中的一个或两个开口和表面以预定的速率相对于另一个移动时，前体分子通过分子束（236）被真空沉积在晶体薄结构（204）的生长前部（228）处。

4. 发明申请

WO2019097525A1 TOUGHENED CERAMIC AND METHODS OF TOUGHENING CERAMIC 审中-公开
公开(公告)号：WO2019097525A1
公开(公告)日：2019-05-23
申请号：PCT/IL2018/051255
申请日：2018-11-20
申请人： TECHNION RESEARCH & DEVELOPMENT FOUNDATION LIMITED
发明人： POKROY, Boaz , POLISHCHUK, Iryna
IPC分类号： C01F11/18 , C01F11/02 , C01F5/00 , C30B28/02
CPC分类号： C01F11/18 , C01F11/00 , C01P2002/54 , C01P2002/72 , C01P2002/85 , C01P2002/88 , C01P2002/89 , C01P2004/03 , C01P2004/04 , C01P2004/54 , C01P2004/64 , C30B28/02
摘要： Disclosed is a ceramic composition comprising a plurality of at least semi-coherent particles with an average diameter ranging from 1 nm to 50 nm included within a matrix, wherein the matrix comprises one metal carbonate salt, metal oxide or metalloid oxide, the particles and the matrix share at least one metal element and the metal element is 10% to 80% of the total content of said matrix, and the composition has a lattice mismatch of less than 5%. Disclosed are also an article and methods for making the ceramic composition of the present invention.

5. 发明申请

WO2005086962A3 SYSTEM AND METHOD FOR FABRICATING A CRYSTALLINE THIN STRUCTURE 审中-公开
公开(公告)号：WO2005086962A3
公开(公告)日：2005-09-22
申请号：PCT/US2005/008237
申请日：2005-03-11
申请人： THE UNIVERSITY OF VERMONT AND STATE AGRICULTURAL COLLEGE , HEADRICK, Randall, L.
发明人： HEADRICK, Randall, L.
IPC分类号： C30B1/00 , C30B3/00 , C30B5/00 , C30B28/02 , C30B29/54 , H01L51/40 , B32B9/04
摘要： A crystalline thin structure (104, 204, 404) is grown on a surface (108, 228) of a substrate (112, 208, 400) by depositing molecules (136, 220) from a molecular precursor to a lateral growth front (144, 224) of the structure using a crystal grower (116, 200). In one embodiment, the crystal grower comprises a solution (124) containing the molecular precursor in a solvent (140). Molecules are added to the lateral growth front by moving one or both of the free surface (120, 120') of the solution and deposition surface relative to the other at a predetermined rate. In another embodiment, the crystal grower comprises a mask (212) that includes at least one opening (216). Precursor molecules are vacuum deposited via a molecular beam (236) at the growth front (228) of the crystalline thin structure (204) as one or both of the opening and surface are moved relative to the other at a predetermined rate.

6. 发明申请

WO2004012257A9 METHOD AND APPARATUS FOR MANUFACTURING NET SHAPE SEMICONDUCTOR WAFERS 审中-公开
标题翻译：用于制造净形状半导体晶片的方法和设备
公开(公告)号：WO2004012257A9
公开(公告)日：2004-03-11
申请号：PCT/US0323401
申请日：2003-07-25
申请人： ASTROPOWER INC , JONCZYK RALF , KENDALL SCOTT L , RAND JAMES A
发明人： JONCZYK RALF , KENDALL SCOTT L , RAND JAMES A
IPC分类号： C30B11/00 , C30B13/00 , C30B29/64 , H01L21/00 , H01L29/06 , H01L31/0236 , H01L31/18 , H01L21/36 , C30B28/02 , H01L29/12 , H01L29/30
CPC分类号： H01L21/67109 , C30B11/002 , C30B13/00 , C30B29/06 , H01L29/0657 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S438/906 , Y10S438/958
摘要： There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter (80), moving the setter through a heating/cooling region to subject the semiconductor material (89) to a temperature profile, and removing a wafer from the recess. The size and shape of the wafer are substantially equal to the size of the wafer when it is used. As a result, the wafer can be fabricated in any desired shape and with any of a variety of surface structural features and/or internal structural features. The temperature profile can be closely controlled, enabling production of wafers having structural features not previously obtainable. There are also provided wafers formed by such methods and setters for use in such methods.
摘要翻译：提供了一种制造晶片的方法，该方法包括：将半导体材料沉积到设置器（80）中的凹槽中，使该设定器移动通过加热/冷却区域以使半导体材料（89）经受温度分布，并且移除晶片从休息室。晶片的尺寸和形状基本上等于晶片使用时的尺寸。结果，晶片可以制造成任何期望的形状并且具有各种表面结构特征和/或内部结构特征中的任何一种。温度分布可以被严密控制，使得能够制造具有之前无法获得的结构特征的晶片。还提供了由这种方法形成的晶片和用于这种方法的设置器。

7. 发明申请

WO2018010500A1 APPARATUS AND METHOD FOR SEMICONDUCTOR POLYCRYSTALLIZATION 审中-公开
标题翻译：半导体多晶的装置和方法
公开(公告)号：WO2018010500A1
公开(公告)日：2018-01-18
申请号：PCT/CN2017/086797
申请日：2017-06-01
申请人： BOE TECHNOLOGY GROUP CO., LTD.
发明人： UM, Yoonsung
IPC分类号： C30B28/02 , C30B33/02 , H01L21/02
CPC分类号： C30B28/02 , C30B1/023 , C30B29/06 , C30B33/02 , H01L21/02532 , H01L21/02554 , H01L21/02565 , H01L21/02667 , H01L21/67109
摘要： Apparatus and method for semiconductor polycrystallization are provided. The apparatus includes a plurality of ejector outlets for ejecting a heated gas to polycrystallize an amorphous semiconductor to produce a polycrystalline semiconductor.
摘要翻译：提供了用于半导体多晶化的装置和方法。该设备包括多个用于喷射加热气体以使非晶半导体多晶化以产生多晶半导体的喷射器出口。

8. 发明申请

WO2015070589A1 一种多晶硅薄膜基板制作方法审中-公开
公开(公告)号：WO2015070589A1
公开(公告)日：2015-05-21
申请号：PCT/CN2014/078850
申请日：2014-05-29
申请人：京东方科技集团股份有限公司
发明人：刘德明
IPC分类号： H01L21/02 , C30B30/04 , C30B28/02
CPC分类号： C30B29/06 , C30B13/20 , H01L21/02422 , H01L21/02532 , H01L21/02667
摘要：提供了一种多晶硅薄膜基板的制作方法，包括：在基板（100）上制备非晶硅薄膜（101）；将处理过的基板（100）穿过高频线圈（102），得到多晶硅薄膜基板。该方法对基板的耐高温要求较低，可以用于柔性基板等，而且，加热的均匀性好。

9. 发明申请

WO2010128310A1 A METHOD OF MAKING SILICON ANODE MATERIAL FOR RECHARGEABLE CELLS 审中-公开
标题翻译：制备可充电电池的硅阳极材料的方法
公开(公告)号：WO2010128310A1
公开(公告)日：2010-11-11
申请号：PCT/GB2010/000943
申请日：2010-05-07
申请人： NEXEON LIMITED , RAYNER, Philip, John
发明人： RAYNER, Philip, John
IPC分类号： C22C21/02 , C22C21/04 , C01B33/00 , C22C3/00 , C30B28/02 , H01M4/58 , H01M10/052
CPC分类号： H01M4/134 , C22C21/02 , C22C21/04 , H01M4/0492 , H01M4/38 , H01M4/386 , H01M4/525 , H01M4/583 , H01M10/0525 , Y02E60/122 , Y10T428/24149 , Y10T428/298 , Y10T428/2982
摘要： There is provided a method of forming silicon anode material for rechargeable cells. The method includes providing a metal matrix, comprising no more than 30wt% silicon, including silicon structures dispersed therein. The method further includes at least partially etching the metal matrix to at least partially isolate the silicon structures.
摘要翻译：提供了一种形成用于可再充电电池的硅阳极材料的方法。该方法包括提供包含不超过30wt％的硅，包括分散在其中的硅结构的金属基质。该方法还包括至少部分地蚀刻金属基体以至少部分地隔离硅结构。

10. 发明申请

WO00068999A1 DEVICE FOR DETECTING X-RAYS OR GAMMA RAYS AND METHOD FOR MAKING SAME 审中-公开
标题翻译：用于检测X射线或伽玛射线的装置及其制造方法
公开(公告)号：WO00068999A1
公开(公告)日：2000-11-16
申请号：PCT/FR2000/001225
申请日：2000-05-05
IPC分类号： C30B1/12 , C30B28/02 , H01L27/146 , H01L31/0296 , H01L31/18 , H01L31/08
CPC分类号： H01L31/1828 , C30B1/12 , C30B28/02 , C30B29/48 , H01L27/14676 , H01L31/0296 , Y02E10/543 , Y02P70/521
摘要： The invention concerns a device for detecting X-rays or gamma rays and a method for making such a device. The device comprises at least an element (4) which is a semiconductor based ceramic of the II-VI type containing CdTe. The method for making said device consists in using a semiconductor powder and subjecting said powder to a ceramic-type treatment comprising a step which consists in compressing the powder to obtain a compact material.
摘要翻译：本发明涉及一种用于检测X射线或γ射线的装置及其制造方法。该装置至少包括一种元素（4），其是含有CdTe的II-VI型半导体基陶瓷。制造所述装置的方法在于使用半导体粉末并对所述粉末进行陶瓷型处理，所述陶瓷型处理包括压缩粉末以获得紧凑材料的步骤。

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