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1. 发明申请

WO2016096556A1 COMPOUND SEMICONDUCTOR DEVICE STRUCTURES COMPRISING POLYCRYSTALLINE CVD DIAMOND 审中-公开
标题翻译：包含多晶CVD金刚石的化合物半导体器件结构
公开(公告)号：WO2016096556A1
公开(公告)日：2016-06-23
申请号：PCT/EP2015/079061
申请日：2015-12-09
申请人： ELEMENT SIX TECHNOLOGIES LIMITED
发明人： LOWE, Frank Yantis , FRANCIS, Daniel , NASSER-FAILI, Firooz , TWITCHEN, Daniel James
IPC分类号： H01L21/20 , H01L21/314 , H01L23/34
CPC分类号： H01L23/3732 , H01L21/02115 , H01L21/02271 , H01L21/02304 , H01L21/0237 , H01L21/02376 , H01L21/02444 , H01L21/02527 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L29/2003 , H01L29/7787
摘要： A semiconductor device structure comprising: a layer of single crystal compound semiconductor material; and a layer of polycrystalline CVD diamond material, wherein the layer of polycrystalline CVD diamond material is bonded to the layer of single crystal compound semiconductor material via a bonding layer having a thickness of less than 25 nm and a thickness variation of no more than 15 nm, wherein an effective thermal boundary resistance (TBR eff ) as measured by transient thermoreflectance at an interface between the layer of single crystal compound semiconductor material and the layer of polycrystalline CVD diamond material is less than 25 m 2 K/GW with a variation of no more than 12 m 2 K/GW as measured across the semiconductor device structure, and wherein the layer of single crystal compound semiconductor material has one or both of the following characteristics: a charge mobility of at least 1200 cm 2 V -1 s -1 ; and a sheet resistance of no more than 700 Ω/square.
摘要翻译：一种半导体器件结构，包括：单晶化合物半导体材料层; 和多晶CVD金刚石材料层，其中多晶CVD金刚石材料层通过厚度小于25nm和厚度变化不超过15nm的粘合层与单晶化合物半导体材料层接合，其中通过在单晶化合物半导体材料层与多晶CVD金刚石材料层之间的界面处的瞬态热反射率测量的有效热边界电阻（TBReff）小于25m 2 K / GW，变化不大于12 半导体器件结构中测量的m2K / GW，并且其中所述单晶化合物半导体材料层具有以下特征之一或两者：电荷迁移率为至少1200cm2V-1s-1; 和不超过700Ω/平方的薄层电阻。

2. 发明申请

WO2013087797A1 LARGE AREA OPTICAL QUALITY SYNTHETIC POLYCRYSTALLINE DIAMOND WINDOW 审中-公开
标题翻译：大面积光学质量合成多晶金刚石窗户
公开(公告)号：WO2013087797A1
公开(公告)日：2013-06-20
申请号：PCT/EP2012/075458
申请日：2012-12-13
申请人： ELEMENT SIX LIMITED
发明人： INGLIS, Paul Nicholas , BRANDON, John Robert , DODSON, Joseph Michael , MOLLART, Timothy Peter
IPC分类号： C23C16/01 , C23C16/27 , H01J37/32 , C23C16/44 , C23C16/56 , C23C16/455 , C23C16/458 , C23C16/46
CPC分类号： G02B1/02 , C01B32/25 , C23C16/01 , C23C16/274 , C23C16/4586 , C23C16/463 , C23C16/56 , Y10T428/24355
摘要： A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 70mm; a thickness equal to or greater than 1.3 mm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ≤ 0.2cm -1 at 10.6 μm;and a dielectric loss coefficient at 145 GHz, of tan δ ≤ 2 x 10 -4 .
摘要翻译：一种多晶化学气相沉积（CVD）金刚石晶片，包括：最大直线尺寸等于或大于70mm; 厚度等于或大于1.3mm; 以及在多晶CVD金刚石晶片的至少中心区域上在室温（标称为298K）测量的以下特征中的一个或两个，所述中心区域是圆形的，以多晶CVD金刚石晶片的中心点为中心，并且具有多晶CVD金刚石晶片的最大直线尺寸的至少70％的直径：10.6mum处的吸收系数<= 0.2cm-1;在145GHz下的介电损耗系数为tanδ≤2×10 ^ 4。

3. 发明申请

WO2013087697A1 SINGLE CRYSTAL CVD SYNTHETIC DIAMOND MATERIAL 审中-公开
标题翻译：单晶CVD合成金刚石材料
公开(公告)号：WO2013087697A1
公开(公告)日：2013-06-20
申请号：PCT/EP2012/075237
申请日：2012-12-12
申请人： ELEMENT SIX LIMITED
发明人： DHILLON, Harpreet Kaur , TWITCHEN, Daniel James , KHAN, Rizwan Uddin Ahmad
IPC分类号： C30B25/10 , C30B25/16 , C30B25/20 , C30B29/04
CPC分类号： C30B29/04 , C30B21/02 , C30B21/04 , C30B25/10 , C30B25/16 , C30B25/20
摘要： A single crystal CVD synthetic diamond material comprising: a total as-grown nitrogen concentration equal to or greater than 5 ppm, and a uniform distribution of defects, wherein said uniform distribution of defects is defined by one or more of the following characteristics: (i) the total nitrogen concentration, when mapped by secondary ion mass spectrometry (SIMS) over an area equal to or greater than 50 x 50 μm using an analysis area of 10 μm or less, possesses a point-to-point variation of less than 30% of an average total nitrogen concentration value, or when mapped by SIMS over an area equal to or greater than 200 x 200 μm using an analysis area of 60 μιη or less, possesses a point-to-point variation of less than 30% of an average total nitrogen concentration value; (ii) an as-grown nitrogen-vacancy defect (NV) concentration equal to or greater than 50 ppb as measured using 77K UV-visible absorption measurements, wherein the nitrogen-vacancy defects are uniformly distributed through the synthetic single crystal CVD diamond material such that, when excited using a 514 nm laser excitation source of spot size equal to or less than 10 μιη at room temperature using a 50 mW continuous wave laser, and mapped over an area equal to or greater than 50 x 50 μm with a data interval less than 10 μιη, there is a low point-to-point variation wherein the intensity area ratio of nitrogen vacancy photoluminescence peaks between regions of high photoluminescent intensity and regions of low photolominescent intensity is 0 ) or the 637 nm photoluminescent peak (NV); (iii) a variation in Raman intensity such that, when excited using a 514 nm laser excitation source (resulting in a Raman peak at 552.4 nm) of spot size equal to or less than 10 μm at room temperature using a 50 mW continuous wave laser, and mapped over an area equal to or greater than 50 x 50 μm with a data interval less than 10 μm, there is a low point-to-point variation wherein the ratio of Raman peak areas between regions of low Raman intensity and high Raman intensity is 0 greater than 120 times a Raman intensity at 552.4 nm, and/or an intensity at 637 nm corresponding to NV - greater than 200 times the Raman intensity at 552.4 nm; (v) a single substitutional nitrogen defect (N s ) concentration equal to or greater than 5 ppm, wherein the single substitutional nitrogen defects are uniformly distributed through the synthetic single crystal CVD diamond material such that by using a 1344 cm -1 infrared absorption feature and sampling an area greater than an area of 0.5 mm 2 , the variation is lower than 80%, as deduced by dividing the standard deviation by the mean value; (vi) a variation in red luminescence intensity, as defined by a standard deviation divided by a mean value, is less than 15%; (vii) a mean standard deviation in neutral single substitutional nitrogen concentration of less than 80%; and (viii) a colour intensity as measured using a histogram from a microscopy image with a mean gray value of greater than 50, wherein the colour intensity is uniform through the single crystal CVD synthetic diamond material such that the variation in gray colour, as characterised by the gray value standard deviation divided by the gray value mean, is less than 40%.
摘要翻译：一种单晶CVD合成金刚石材料，包括：等于或大于5ppm的总生长氮浓度和均匀分布的缺陷，其中所述均匀分布的缺陷由以下一个或多个特征定义：（i ）当使用10mum以下的分析面积在等于或大于50×50μm的区域上通过二次离子质谱法（SIMS）进行映射时，总氮浓度具有小于30的点对点变化平均总氮浓度值的百分比，或者当使用分析面积为60μm或以下的分析区域在SIMS对等于或大于200×200μm的区域进行映射时，具有小于30％平均总氮浓度值; （ii）使用77K紫外 - 可见吸收测量测量的等于或大于50ppb的生长氮空位缺陷（NV）浓度，其中氮空位缺陷通过合成单晶CVD金刚石材料均匀分布，例如当使用50mW连续波激光器在室温下使用等于或小于10μaeta的光斑尺寸的514nm激光源进行激发时，使用数据间隔映射到等于或大于50×50um的区域低于10个多孔，存在低点对点变化，其中高光致发光强度区域和低光致发光强度区域之间的氮空位光致发光峰的强度面积比对于575nm光致发光峰（NV0）为<2x，或637nm光致发光峰（NV）; （iii）拉曼强度的变化，使得当使用50mW连续波激光器在室温下使用514nm激光源（在552.4nm的拉曼峰值）激发等于或小于10μm的光斑尺寸时，，并且以小于10um的数据间隔映射到等于或大于50×50um的区域，存在低点对点变化，其中低拉曼强度区域与高拉曼区域之间的拉曼峰面积比强度<1.25倍; （iv）使用77K紫外 - 可见吸收测量测量的等于或大于50ppb的生长氮空位缺陷（NV）浓度，其中当使用等于或小于等于或等于使用50mW的连续波激光器在77K下使用10Km的激光，给出对应于NV0的575nm处的强度，大于在552.4nm的拉曼强度的120倍，和/或对应于NV-的637nm的强度大于拉曼的200倍 552.4nm处的强度; （v）等于或大于5ppm的单一替代氮缺陷（Ns）浓度，其中单个取代氮缺陷通过合成单晶CVD金刚石材料均匀分布，使得通过使用1344cm -1的红外吸收特征和采样面积大于0.5平方毫米的面积，变化小于80％，通过将标准差除以平均值推导出来; （vi）由标准偏差除以平均值定义的红色发光强度的变化小于15％; （vii）中性单取代氮浓度的平均标准偏差小于80％; 和（viii）使用平均灰度值大于50的显微镜图像的直方图测量的颜色强度，其中通过单晶CVD合成金刚石材料的颜色强度是均匀的，使得灰色的变化如表征通过灰度值标准差除以灰度值平均值，小于40％。

4. 发明申请

WO2013007605A1 SINGLE CRYSTAL DIAMOND SUBSTRATES FOR SYNTHESIS OF SINGLE CRYSTAL DIAMOND MATERIAL 审中-公开
标题翻译：用于单晶金刚石材料合成的单晶金刚石基体
公开(公告)号：WO2013007605A1
公开(公告)日：2013-01-17
申请号：PCT/EP2012/063171
申请日：2012-07-05
申请人： ELEMENT SIX LIMITED , TWITCHEN, Daniel James , GEOGHEGAN, Sarah Louise , PERKINS, Neil , SCARSBROOK, Geoffrey Alan , BRANDON, John Robert
发明人： TWITCHEN, Daniel James , GEOGHEGAN, Sarah Louise , PERKINS, Neil , SCARSBROOK, Geoffrey Alan , BRANDON, John Robert
IPC分类号： C30B29/04 , B01J3/06 , C30B33/04 , C30B31/20 , C30B25/10
CPC分类号： C30B29/04 , C30B25/105 , C30B33/04
摘要： A method of growing synthetic single crystal diamond material, the method comprising: providing a single crystal diamond substrate; and growing synthetic single crystal diamond material on said single crystal diamond substrate, wherein said single crystal diamond substrate is formed of single crystal diamond material which is irradiated prior to growing synthetic single crystal diamond material thereon, and wherein the irradiation comprises irradiating the diamond material to a depth of 5 μm or greater.
摘要翻译：一种生长合成单晶金刚石材料的方法，所述方法包括：提供单晶金刚石基底; 以及在所述单晶金刚石衬底上生长的合成单晶金刚石材料，其中所述单晶金刚石衬底由在其上生长合成单晶金刚石材料之前被照射的单晶金刚石材料形成，并且其中所述照射包括将所述金刚石材料照射到 5μm以上的深度。

5. 发明申请

WO2012152848A2 TIP FOR DEGRADATION TOOL AND TOOL COMPRISING SAME 审中-公开
标题翻译：提升工具和包含它的工具
公开(公告)号：WO2012152848A2
公开(公告)日：2012-11-15
申请号：PCT/EP2012/058585
申请日：2012-05-09
申请人： ELEMENT SIX ABRASIVES S.A. , JONKER, Cornelis, Roelof , BOWES, David, Christian , SHABALALA, Thembinkosi , CAN, Nedret
发明人： JONKER, Cornelis, Roelof , BOWES, David, Christian , SHABALALA, Thembinkosi , CAN, Nedret
CPC分类号： E21C35/183 , B01J3/062 , B01J2203/062 , B01J2203/0655 , B01J2203/068 , B01J2203/0685 , B25D17/02 , B25D2222/09 , B25D2222/72 , E21B10/567 , E21B10/5673 , E21C2035/1813 , E21C2035/1816
摘要： A tip for a degradation tool, the tip comprising a PCD structure joined to a cemented carbide substrate; the PCDstructure comprising a plurality of strata arranged so that adjacent strata have alternating compressive and tensile stress states, adjacent strata comprising different PCD grades and being directly bonded to each other by inter-growth of diamond grains; each stratum having a mean thickness of at most 500 microns; the PCD structure defining a working end including a rounded conical apex having a radius of curvature of 1.3 mm to 4 mm.
摘要翻译：用于降解工具的尖端，所述尖端包括连接到硬质合金基底的PCD结构; PCD结构包括多个层，布置成使得相邻的层具有交替的压缩和拉伸应力状态，相邻的层包含不同的PCD等级并且通过金刚石晶粒的相互生长彼此直接结合; 每个层的平均厚度至多为500微米; 所述PCD结构限定了包括具有1.3mm至4mm的曲率半径的圆锥形顶点的工作端。

6. 发明申请

WO2012152661A1 COMPOSITE DIAMOND ASSEMBLIES 审中-公开
标题翻译：复合金刚石组件
公开(公告)号：WO2012152661A1
公开(公告)日：2012-11-15
申请号：PCT/EP2012/058155
申请日：2012-05-03
申请人： ELEMENT SIX N.V. , VROLIJK, Berdinus Christianus Maria , PELS, Gerrit Jan
发明人： VROLIJK, Berdinus Christianus Maria , PELS, Gerrit Jan
IPC分类号： C30B29/04 , C30B33/08 , G02B7/00
CPC分类号： C30B29/04 , C30B33/08 , G02B7/007
摘要： A composite diamond assembly comprising: a wafer of diamond material; and a diamond component mounted within an opening formed within the wafer of diamond material, the diamond component being formed of a different type of diamond material to that of the wafer, wherein the opening comprising a wedge-shaped or step-shaped side wall, wherein the diamond component is in the form of a plate having a front face and a rear face bounded by a wedge-shaped or step-shaped side wall which is complimentary to the wedge-shaped or step-shaped side wall of the opening, said front face having a larger surface area than said rear surface, and wherein the diamond component is mounted within the opening by a braze join disposed between the wedge-shaped or step-shaped side wall of the opening and the complimentary wedge-shaped or step-shaped side wall of the diamond component.
摘要翻译：一种复合金刚石组件，包括：金刚石材料晶片; 以及安装在形成于所述金刚石材料晶片内的开口内的金刚石部件，所述金刚石部件由与所述晶片的不同类型的金刚石材料形成，其中所述开口包括楔形或阶梯形侧壁，其中金刚石部件是板的形式，其具有由楔形或阶梯形侧壁限定的前表面和后表面，所述楔形或阶梯形侧壁与开口的楔形或阶梯形侧壁互补，所述前部表面具有比所述后表面更大的表面积，并且其中所述金刚石部件通过布置在所述开口的所述楔形或阶梯形侧壁与所述互补的楔形或阶梯形状之间的钎焊接头安装在所述开口内钻石组件的侧壁。

7. 发明申请

WO2012084659A3 A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL 审中-公开
公开(公告)号：WO2012084659A3
公开(公告)日：2012-06-28
申请号：PCT/EP2011/072823
申请日：2011-12-14
申请人： ELEMENT SIX LIMITED , CULLEN, Alexander Lamb , DODSON, Joseph Michael , WILLIAMS, Stephen David , BRANDON, John Robert
发明人： CULLEN, Alexander Lamb , DODSON, Joseph Michael , WILLIAMS, Stephen David , BRANDON, John Robert
IPC分类号： H01J37/32 , C23C16/27 , C23C16/511
摘要： A microwave plasma reactor for manufacturing a synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber (2); a substrate holder (4) disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration (12) for feeding microwaves from a microwave generator (8) into the plasma chamber; and a gas flow system (13,16) for feeding process gases into the plasma chamber and removing them therefrom, wherein the microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber comprises: an annular dielectric window (18) formed in one or several sections; a coaxial waveguide (14) having a central inner conductor (20) and an outer conductor (22) for feeding microwaves to the annular dielectric window; and a waveguide plate (24) comprising a plurality of apertures (28) disposed in an annular configuration with a plurality of arms (26) extending between the apertures, each aperture forming a waveguide for coupling microwaves towards the plasma chamber.

8. 发明申请

WO2012034925A1 DIAMOND ELECTRODES FOR ELECTROCHEMCIAL DEVICES 审中-公开
标题翻译：电子器件用金刚石电极
公开(公告)号：WO2012034925A1
公开(公告)日：2012-03-22
申请号：PCT/EP2011/065574
申请日：2011-09-08
申请人： ELEMENT SIX LIMITED , MOLLART, Timothy Peter , BRANDON, John Robert , WILMAN, Jonathan James
发明人： MOLLART, Timothy Peter , BRANDON, John Robert , WILMAN, Jonathan James
IPC分类号： C25B11/12 , C02F1/461 , C25B11/03
CPC分类号： C02F1/46109 , C02F1/4672 , C02F2001/46133 , C02F2001/46152 , C02F2201/46105 , C23C16/28 , C23C16/56 , C25B11/03 , C25B11/12 , C25D17/10
摘要： A bulk boron doped diamond electrode comprising a plurality of grooves disposed in a surface of the bulk boron doped diamond electrode. The bulk boron doped diamond electrode is formed by growing a bulk boron doped diamond electrode using a chemical vapour deposition technique and forming a plurality of grooves in a surface of the bulk boron doped diamond electrode. According to one arrangement, the plurality of grooves are formed by forming a pattern of carbon solvent metal over a surface of the bulk boron doped diamond electrode and heating whereby the carbon solvent metal dissolves underlying diamond to form grooves in the surface of the bulk boron doped electrode. The invention also relates to an electrochemical cell comprising one or more grooved bulk boron doped diamond electrodes. The or each bulk boron doped diamond electrode is oriented within the electrochemical device such that the grooves are aligned in a direction substantially parallel to a direction of electrolyte flow.
摘要翻译：一种体积硼掺杂的金刚石电极，其包括设置在体积掺杂硼的金刚石电极的表面中的多个凹槽。通过使用化学气相沉积技术生长体积掺杂硼的金刚石电极并在体积硼掺杂的金刚石电极的表面中形成多个凹槽来形成体积掺杂硼的金刚石电极。根据一种布置，通过在体积硼掺杂的金刚石电极的表面上形成碳溶剂金属的图案并加热形成多个凹槽，由此碳溶剂金属溶解下面的金刚石以在体积硼掺杂的表面中形成凹槽电极。本发明还涉及一种电化学电池，其包括一个或多个带槽的体积硼掺杂金刚石电极。所述或每个体积硼掺杂的金刚石电极在所述电化学装置内取向，使得所述凹槽在基本上平行于电解质流动方向的方向上排列。

9. 发明申请

WO2012016977A2 A DIAMOND OPTICAL ELEMENT 审中-公开
标题翻译：钻石光学元件
公开(公告)号：WO2012016977A2
公开(公告)日：2012-02-09
申请号：PCT/EP2011/063278
申请日：2011-08-02
申请人： ELEMENT SIX LIMITED , UNIVERSITÄT STUTTGART , TWITCHEN, Daniel, James , DODSON, Joseph, Michael , MARKHAM, Matthew, Lee , JELEZKO, Fedor
发明人： TWITCHEN, Daniel, James , DODSON, Joseph, Michael , MARKHAM, Matthew, Lee , JELEZKO, Fedor
IPC分类号： B82Y20/00 , C30B29/04 , G02B3/00
CPC分类号： F21V5/00 , B82Y20/00 , C30B25/02 , C30B29/04 , G02B1/02 , H01L33/58 , Y10T428/24355 , Y10T428/24612 , Y10T428/24628 , Y10T428/26
摘要： A method of manufacturing an optical element, the method comprising: growing a first layer of single crystal diamond material via a chemical vapour deposition technique using a gas phase having a first nitrogen concentration; growing a second layer of single crystal diamond material over said first layer via a chemical vapour deposition technique using a gas phase having a second nitrogen concentration, wherein the second nitrogen concentration is lower than the first nitrogen concentration; forming an optical element from at least a portion of the second layer of single crystal diamond material; and forming an out-coupling structure at a surface of the optical element for increasing out-coupling of light.
摘要翻译：一种制造光学元件的方法，所述方法包括：通过使用具有第一氮浓度的气相的化学气相沉积技术生长第一层单晶金刚石材料; 通过使用具有第二氮浓度的气相的化学气相沉积技术在所述第一层上生长第二层单晶金刚石材料，其中第二氮浓度低于第一氮浓度; 从所述第二层单晶金刚石材料的至少一部分形成光学元件; 以及在所述光学元件的表面处形成出耦合结构，以增加光的耦合。

10. 发明申请

WO2011089117A2 PICK TOOL AND METHOD FOR MAKING SAME 审中-公开
标题翻译：选择工具及其制造方法
公开(公告)号：WO2011089117A2
公开(公告)日：2011-07-28
申请号：PCT/EP2011/050616
申请日：2011-01-18
申请人： ELEMENT SIX HOLDING GMBH , HEIDERICH, Ernst , RIES, Bernd, Heinrich , LACHMANN, Frank, Friedrich
发明人： HEIDERICH, Ernst , RIES, Bernd, Heinrich , LACHMANN, Frank, Friedrich
CPC分类号： E21B10/58 , B22F7/08 , C22C1/00 , C22C26/00 , C22C29/08 , E21B10/567 , E21C35/1933
摘要： A pick tool (100) comprising an insert (110) and a steel holder (120) for the insert (110), the insert (110) comprising a superhard tip (112) joined to a cemented carbide support body (114) having an insertion shank (118); the steel holder (120) comprising a shaft (122) for connection to a tool carrier (not shown) and provided with a bore (126) configured for receiving the insertion shank (118); the volume of the cemented carbide support body (114) being at least 6 cm 3 .
摘要翻译：包括用于插入件（110）的插入件（110）和钢保持件（120）的插入工具（100），所述插入件（110）包括超硬尖端（112），所述超硬尖端（112）具有插入杆（118）的碳化物支撑体（114）; （120）包括用于连接到工具架（未示出）并且设置有用于接收插入杆（118）的孔（126）的轴（122）;其中，硬质合金支撑体（114）的体积至少为6cm 3。

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