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81. 发明申请

WO2009120404A1 SUPER LATTICE/QUANTUM WELL NANOWIRES 审中-公开
标题翻译：超级尺寸/质量好的纳米尺寸
公开(公告)号：WO2009120404A1
公开(公告)日：2009-10-01
申请号：PCT/US2009/032339
申请日：2009-01-29
申请人： IBM CORPORATION , HOVEL, Harold, J. , HUANG, Qiang , SHAO, Xiaoyan , VICHICONTI, James , WALKER, George, F.
发明人： HOVEL, Harold, J. , HUANG, Qiang , SHAO, Xiaoyan , VICHICONTI, James , WALKER, George, F.
IPC分类号： H01L21/00 , H01L31/06
CPC分类号： H01L31/18 , B82Y10/00 , B82Y30/00 , C30B29/02 , C30B29/06 , C30B29/40 , C30B29/52 , C30B29/60 , C30B29/605 , C30B33/10 , H01L21/30604 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L31/0352 , H01L33/20
摘要： Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.
摘要翻译：在没有模板的情况下通过从两种或更多种半导体材料的层状结构中去除材料来制造分段半导体纳米线。去除在层状结构的表面上的某些位置处发生，并且优选地沿着结晶轴的方向延伸，使得具有分段结构的纳米线保持在很少或不发生去除的位置。不同片段之间的界面可以垂直于纳米线的纵向方向或与之相垂直。

82. 发明申请

WO2005026671A3 FOCAL PLANE ARRAYS IN TYPE-II SUPERLATTICES 审中-公开
标题翻译：第二类超声波的重点平面阵列
公开(公告)号：WO2005026671A3
公开(公告)日：2009-06-18
申请号：PCT/US0324235
申请日：2003-08-01
申请人： MP TECHNOLOGIES LLC
发明人： RAZEGHI MANIJEDH
IPC分类号： H01L31/0232 , G01J20060101 , G01J1/00 , H01L21/00 , H01L21/28 , H01L21/3205 , H01L21/44 , H01L27/14 , H01L27/146 , H01L29/06 , H01L29/768 , H01L31/00 , H01L31/0304 , H01L31/0328 , H01L31/0336 , H01L31/0352 , H01L31/06 , H01L31/109 , H01L33/00
CPC分类号： H01L31/035236 , B82Y20/00 , H01L27/1465 , H01L27/14687 , H01L31/0304 , H01L2224/16225 , H01L2224/81193 , H01L2924/351 , Y02E10/544
摘要： The subject invention comprises a type-II superlattice photon detector and focal planes array and method for making. The device may be either a binary or tertiary system with a type-II band alignment.
摘要翻译：本发明包括II型超晶格光子检测器和焦平面阵列及其制造方法。该装置可以是具有II型带对准的二进制或三级系统。

83. 发明申请

WO2009012120A1 SYSTEM AND METHOD FOR FORMING SOLAR CELL STRUCTURES 审中-公开
标题翻译：用于形成太阳能电池结构的系统和方法
公开(公告)号：WO2009012120A1
公开(公告)日：2009-01-22
申请号：PCT/US2008/069684
申请日：2008-07-10
申请人： SILICON CHINA (HK) LIMITED , CHAN, Chung
发明人： CHAN, Chung
IPC分类号： H01L31/06
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/0547 , H01L31/068 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A multi-value capacitor with a safety disconnect mechanism has a capacitive element with six capacitive sections, a common wire and six section wires enclosed in a cylindrical metal can with a metal lid that normally has a concave configuration. The wires are soldered to contacts extending through the concave metal lid. The safety disconnect mechanism includes an external insulator disk with terminals. The terminals in the insulator disk align with the contacts in the metal lid. The center common terminal of the insulator disk is fixedly riveted to the center common contact of the metal lid. Spring elements form the electrical connection between the section terminals of the insulator disk and the section contacts in the metal lid.
摘要翻译：具有安全断开机构的多值电容器具有电容元件，其具有六个电容部分，公共电线和六个部分电线，其包围在通常具有凹形配置的金属盖的圆柱形金属罐中。电线焊接到延伸穿过凹金属盖的触点。安全断开机构包括具有端子的外部绝缘体盘。绝缘体盘中的端子与金属盖中的触点对准。绝缘体盘的中心公共端子固定地铆接到金属盖的中心公共接触点上。弹簧元件形成绝缘盘的部分端子和金属盖中的部分接触之间的电连接。

84. 发明申请

WO2008057629A2 PHOTOVOLTAIC AND PHOTOSENSING DEVICES BASED ON ARRAYS OF ALIGNED NANOSTRUCTURES 审中-公开
标题翻译：基于对准纳米结构阵列的光伏和光电器件
公开(公告)号：WO2008057629A2
公开(公告)日：2008-05-15
申请号：PCT/US2007070452
申请日：2007-06-05
申请人： UNIV ILLINOIS , BETTGE MARTIN , BURDIN STEPHAN , MACLAREN SCOTT , PETROV IVAN , SAMMANN ERNIE
发明人： BETTGE MARTIN , BURDIN STEPHAN , MACLAREN SCOTT , PETROV IVAN , SAMMANN ERNIE
IPC分类号： H01L31/042 , H01L31/06
CPC分类号： H01L31/035281 , B82Y20/00 , B82Y30/00 , H01L31/06 , H01L31/1804 , Y02E10/50 , Y02P70/521
摘要： Photovoltaic cells and methods for making photovoltaic cells are provided. The photovoltaic cells include a photoactive layer which includes an array of elongated vertically aligned nanostructures. The nanostructures include at least a first and a second semiconducting material. The photovoltaic layer may also include a transparent insulating material which serves a passivation function.
摘要翻译：提供光伏电池和制造光伏电池的方法。光伏电池包括光活性层，其包括细长垂直排列的纳米结构的阵列。纳米结构包括至少第一和第二半导体材料。光伏层还可以包括用于钝化功能的透明绝缘材料。

85. 发明申请

WO2006116337A3 DOPED SEMICONDUCTOR NANOCRYSTALS AND METHODS OF MAKING SAME 审中-公开
公开(公告)号：WO2006116337A3
公开(公告)日：2006-11-02
申请号：PCT/US2006/015518
申请日：2006-04-25
申请人： BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS , PRADHAN, Narayan , PENG, Xiaogang
发明人： PRADHAN, Narayan , PENG, Xiaogang
IPC分类号： H01L21/00 , H01L31/06
摘要： A method of synthesizing doped semiconductor nanocrystals. In one embodiment, the method includes the steps of combining a metal oxide or metal salt precursor, a ligand, and a solvent to form a metal complex in a reaction vessel; admixing an anionic precursor with the metal complex at a first temperature, T1, sufficient to form a plurality of host nanocrystals; doping a metal dopant onto the plurality of the host nanocrystals at a second temperature, T2, such that a layer of the metal dopant is formed substantially over the surface of a host nanocrystal that receives a metal dopant; and adding a mixture having the anionic precursor and the metal oxide or metal salt precursor at a third temperature, T3, into the reaction vessel to allow regrowth of host nanocrystals on the surface of the layer of the metal dopant formed substantially over the surface of a host nanocrystal that receives a metal dopant to form a plurality of doped nanocrystals, wherein the doped nanocrystals show a characteristic of semiconductor.

86. 发明申请

WO2005096391A3 PHOTO-ELECTROCHEMICAL SOLAR CELL MODULE 审中-公开
标题翻译：光电化学太阳能电池组件
公开(公告)号：WO2005096391A3
公开(公告)日：2006-08-10
申请号：PCT/EP2005003372
申请日：2005-03-31
申请人： TEN FORSCHUNG EV FRAUNHOFER , UNIV ALBERT LUDWIGS FREIBURG , HINSCH ANDREAS , BELLEDIN UDO , SASTRAWAN RONALD , GEORG ANDREAS
发明人： HINSCH ANDREAS , BELLEDIN UDO , SASTRAWAN RONALD , GEORG ANDREAS
IPC分类号： H01G9/20 , H01L31/00 , H01L31/042 , H01L31/06
CPC分类号： H01G9/2022 , H01G9/2031 , H01G9/2059 , H01G9/2068 , H01L51/445 , Y02E10/542
摘要： The inventive photo-electrochemical solar cell module comprises at least two solar cells having first (1) and second (1') substrates between which an electroconductive transparent layer (2), a porous chromatophore layer (3) and a second electroconductive layer (5) are disposed, wherein said solar cells are separated from each other by an insulating web comprising, in at least some areas, a conductor strip (6), each solar cell provided with at least one filling orifice for filling said cell with die and/or electrolyte, wherein the second electroconductive layer (5) comprises, on the side thereof opposite to a separating layer, a channel and/or spacer-shaped profile for forming cavities for receiving and transmitting the die and/or electrolyte.
摘要翻译：包括至少两个太阳能电池中的光电化学太阳能电池模块被布置成与第一（1）和第二基板（L“），其之间的透明导电层（2），多孔染料载体层（3）和第二导电层（5），其中通过绝缘网，其包括在导体轨道的至少一些区域（6）被彼此分离，并且具有用于与染料和/或电解质，其中所述第二导电层填充所述太阳能电池的至少一个填充开口每个太阳能电池的太阳能电池（5 ）上从分离膜侧远程侧具有通道状的和/或间距分析，以形成用于接收和传送所述染料和/或电解质腔。

87. 发明申请

WO2006042698A1 VERFAHREN ZUR KONTAKTTRENNUNG ELEKTRISCH LEITFÄHIGER SCHICHTEN AUF RÜCKKONTAKTIERTEN SOLARZELLEN UND ENTSPRECHENDE SOLARZELLE 审中-公开
标题翻译：作者接触和分离行为电力到背接触太阳能电池和相关太阳能电池的方法
公开(公告)号：WO2006042698A1
公开(公告)日：2006-04-27
申请号：PCT/EP2005/011046
申请日：2005-10-13
申请人： INSTITUT FÜR SOLARENERGIEFORSCHUNG GMBH , TEPPE, Andreas , ENGELHART, Peter , MÜLLER, Jörg
发明人： TEPPE, Andreas , ENGELHART, Peter , MÜLLER, Jörg
IPC分类号： H01L31/0224 , H01L31/04 , H01L31/06 , H01L31/18
CPC分类号： H01L31/18 , H01L31/022433 , H01L31/022441 , H01L31/022458 , H01L31/0682 , Y02E10/547
摘要： Es wird ein Verfahren zur Herstellung einer Solarzelle (1) mit einem Halbleitersubstrat (2) vorgeschlagen, dessen elektrische Kontaktierung auf der Halbleitersubstratrückseite erfolgt. Die Halbleitersubstratrückseite weist lokal dotierte Bereiche (3) auf. Die danebenliegende Bereiche (4) weisen eine vom Bereich (3) unterschiedliche Dotierung auf. Damit das leitfähige Material (5) die Solarzelle nicht kurzschliesst, sind die beiden Bereiche (3,4) zumindest an deren Bereichsgrenzen (6) mit einer dünnen, elektrisch isolierenden Schicht (7) überzogen. Die beiden Bereiche (3,4) sind zunächst ganzflächig mit einem elekrisch leitfähigen Material (5) beschichtet. Die Trennung der elektrisch leitfähigen Schicht (5) erfolgt durch ganzflächiges Aufbringen einer Ätzbarrierenschicht (8), welche anschliessend maskierungsfrei und selektiv, z.B. durch Laserablation, lokal oberhalb der isolierenden Schicht (7), entfernt wird. Durch den anschliessenden Angriff einer Ätzlösung wird die leitfähige Schicht (5) im Bereich der Öffnungen (9) der Ätzbarrierenschicht (8) lokal entfernt.
摘要翻译：它提出了一种方法，用于制造包括一个半导体衬底（2）的太阳能电池（1），所述电接触而在所述半导体基板背面的地方。所述半导体基板背面侧已局部掺杂区（3）。下一海拔地区（4）具有一个从所述区域（3）不同的掺杂。因此，导电材料（5）不短路的太阳能电池中，这两个区域（3,4）与一薄的，电绝缘层至少涂覆在所述区域边界（6）（7）。两个区域（3,4）首先被涂覆在整个表面上通过电用导电材料（5）。导电层（5）的通过覆盖沉积一个蚀刻阻挡层（8），然后自由地和有选择地屏蔽，例如分离通过激光烧蚀除去，局部地，绝缘层（7）的上方。通过蚀刻溶液的后续攻击，导电层（5）是在开口的区域（9）所述蚀刻阻挡层（8）被去除本地。

88. 发明申请

WO2005051068A3 SILICON-BASED SCHOTTKY BARRIER INFRARED OPTICAL DETECTOR 审中-公开
标题翻译：基于硅的肖特基屏障红外光检测器
公开(公告)号：WO2005051068A3
公开(公告)日：2006-03-02
申请号：PCT/US2004038547
申请日：2004-11-17
申请人： SIOPTICAL INC , PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATHAK SOHAM , PIEDE DAVID , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
发明人： PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATHAK SOHAM , PIEDE DAVID , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
IPC分类号： G02B6/12 , G02B6/122 , H01L31/00 , H01L31/0224 , H01L31/0232 , H01L31/0392 , H01L31/108 , H01L31/153 , H01L27/14 , H01L31/06
CPC分类号： H01L31/108 , G02B6/12004 , G02B6/1228 , H01L31/022408 , H01L31/0232 , H01L31/03921 , H01L31/153 , Y02E10/50
摘要： A silicon-based IR photodetector [20] is formed within a silicon-on-insulator (SOI) structure [22] by placing a metallic strip [30] (preferably, a silicide) over a portion of an optical waveguide formed within a planar silicon surface layer [28] (i.e., "planar SOI layer") of the SOI structure, the planar SOI layer comprising a thickness of less than one micron. Room temperature operation of the photodetector is accomplished as a result of the relatively low dark current associated with the SOI-based structure and the ability to use a relatively small surface area silicide strip to collect the photocurrent. The planar SOI layer may be doped, and the geometry of the silicide strip may be modified, as desired, to achieve improved results over prior art silicon-based photodetectors.
摘要翻译：通过将金属条（30）（优选硅化物）放置在形成在平面内的光波导的一部分上，在绝缘体上硅（SOI）结构[22]内形成硅基红外光电检测器[20] 硅表面层[28]（即，“平面SOI层”），平面SOI层包含小于1微米的厚度。由于与基于SOI的结构相关联的相对较低的暗电流和使用相对小的表面积的硅化物带收集光电流的能力，光电检测器的室温操作是完成的。平面SOI层可以被掺杂，并且根据需要可以修改硅化物带的几何形状以实现相对于现有技术的硅基光电探测器的改进的结果。

89. 发明申请

WO2005034171A3 PHOTOVOLTAIC ELEMENT 审中-公开
标题翻译：光伏元件
公开(公告)号：WO2005034171A3
公开(公告)日：2005-12-08
申请号：PCT/EP2004010916
申请日：2004-09-30
申请人： NAEGEL WOLF
发明人： NAEGEL WOLF
IPC分类号： H01L31/0224 , H01L31/06
CPC分类号： H01L31/06 , H01L31/022425 , Y02E10/50
摘要： A photovoltaic element, in particular, of application as solar cell for photovoltaic units, comprises a photon absorber (10). An electrically-conducting working element (12) is at least partly embedded in the photon absorber (10). The working element (12) is separated from the photon absorber (10) by means of a phase boundary. The working element (12) further comprises a higher electron mobility than the photon absorber (10). It was surprisingly discovered that the efficacy of said photovoltaic element is greatly increased.
摘要翻译：其特别用作用于光伏系统的太阳能电池的光电元件，具有一个光子吸收器（10）。在光子吸收器（10）的导电有源元件（12）被至少部分地嵌入。有源元件（12）是由光子吸收器（10）的相边界分开。此外，有源元件（12）具有比所述光子吸收器（10）更高的电子迁移率。令人惊讶地发现，本发明的光电元件的效率显著增加。

90. 发明申请

WO2002009198A1 ETCHING APPARATUS HAVING A CONFINEMENT AND GUIDE OBJECT FOR GAS FLOW OF PLASMA AND METHOD FOR USING SAME 审中-公开
标题翻译：具有等离子体气体流动的限制和指导对象的蚀刻装置及其使用方法
公开(公告)号：WO2002009198A1
公开(公告)日：2002-01-31
申请号：PCT/US2001/041421
申请日：2001-07-26
申请人： UNAXIS USA INC. , LEE, Jewon , DEVRE, Mike , JOHNSON, Dave , MACKENZIE, Kenneth , SASSERATH, Jay
发明人： LEE, Jewon , DEVRE, Mike , JOHNSON, Dave , MACKENZIE, Kenneth , SASSERATH, Jay
IPC分类号： H01L31/06
CPC分类号： H01L21/02019 , H01J37/3244 , H01J37/32449 , H01J2237/3345 , H01L21/30621 , H01L31/184 , H01L31/1844 , Y02E10/544
摘要： A method and apparatus for anisotropically plasma etching semiconductor materials is disclosed. The apparatus includes an etching chamber for plasma etching which includes therein a gas confinement apparatus and/or a gas flow modifier to focus the plasma gas onto the substrate to be etched and provide uniform etch rates, modulation of sidewall profile shapes or surface morphology during processing. The gas confinement apparatus and the gas flow modifier are formed of any suitable shape and may include openings therein to produce a balanced gas flow rate. The apparatus is especially useful for etching GaAs and InP substrates.
摘要翻译：公开了用于各向异性等离子体蚀刻半导体材料的方法和装置。该装置包括用于等离子体蚀刻的蚀刻室，其中包括气体限制装置和/或气体流动改性剂，以将等离子体气体聚焦到待蚀刻的基底上，并且在加工期间提供均匀的蚀刻速率，侧壁轮廓形状或表面形态的调制。气体限制装置和气体流动调节器由任何合适的形状形成，并且可以包括其中的开口以产生平衡的气体流量。该装置对于蚀刻GaAs和InP衬底特别有用。

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