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1. 发明申请

WO2005060689A3 EMI-EMC SHIELD FOR SILICON-BASED OPTICAL TRANSCEIVER 审中-公开
标题翻译：用于硅基光学收发器的EMI-EMC屏蔽
公开(公告)号：WO2005060689A3
公开(公告)日：2006-02-23
申请号：PCT/US2004042741
申请日：2004-12-17
申请人： SIOPTICAL INC , PIEDE DAVID , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
发明人： PIEDE DAVID , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
IPC分类号： G02B6/42 , G02B6/12
CPC分类号： G02B6/4277 , G02B6/42 , G02B6/4246
摘要： An SOI-based opto-electronic structure includes various electronic components disposed with their associated optical components within a single SOI layer, forming a monolithic arrangement. EMI/EMC shielding is provided by forming a metallized outer layer on the surface of an external prism coupler that interfaces with the SOI layer, the metallized layer including transparent apertures to allow an optical signal to be coupled into and out of the SOI layer. The opposing surface of the prism coupler may also be coated with a metallic material to provide additional shielding. Further, metallic shielding plates may be formed on the SOI structure itself, overlying the locations of EMI-sensitive electronics. All of these metallic layers are ultimately coupled to an external ground plane to isolate the structure and provide the necessary shielding.
摘要翻译：基于SOI的光电结构包括在单个SOI层内与其相关联的光学部件一起设置的各种电子部件，形成单片布置。通过在与SOI层相接的外部棱镜耦合器的表面上形成金属化的外层来提供EMI / EMC屏蔽，金属化层包括透明的孔，以允许光信号耦合到SOI层中。棱镜耦合器的相对表面也可以用金属材料涂覆以提供额外的屏蔽。此外，金属屏蔽板可以形成在SOI结构本身上，覆盖EMI敏感电子器件的位置。所有这些金属层最终被耦合到外部接地平面以隔离结构并提供必要的屏蔽。

2. 发明申请

WO2005079258A3 SOI-BASED PHOTONIC BANDGAP DEVICES 审中-公开
标题翻译：基于SOI的光电带宽器件
公开(公告)号：WO2005079258A3
公开(公告)日：2006-06-01
申请号：PCT/US2005004123
申请日：2005-02-09
申请人： SIOPTICAL INC , GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , PIEDE DAVID , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
发明人： GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , PIEDE DAVID , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
IPC分类号： G02B26/00 , G02F1/00 , G02F1/025
CPC分类号： G02F1/025 , G02F2202/32
摘要： An SOI-based photonic bandgap (PBG) electro-optic device utilizes a patterned PBG structure to define a two-dimensional waveguide within an active waveguiding region of the SOI electro-optic device. The inclusion of the PBG columnar arrays within the SOI structure results in providing extremely tight lateral confinement of the optical mode within the waveguiding structure, thus significantly reducing the optical loss. By virtue of including the PBG structure, the associated electrical contacts may be placed in closer proximity to the active region without affecting the optical performance, thus increasing the switching speed of the electro-optic device. The overall device size, capacitance and resistance also reduced as a consequence of using PBGs for lateral mode confinement.
摘要翻译：基于SOI的光子带隙（PBG）电光器件利用图案化的PBG结构来在SOI电光器件的有源波导区域内限定二维波导。在SOI结构中包含PBG柱状阵列导致在波导结构内提供光学模式的非常紧密的侧向约束，从而显着减少光学损耗。通过包括PBG结构，相关联的电触点可以放置在更接近有源区域而不影响光学性能，从而增加电光器件的切换速度。由于使用PBG用于横向模式限制，整个设备尺寸，电容和电阻也减小了。

3. 发明申请

WO2005086786A3 WAFER-LEVEL OPTO-ELECTRONIC TESTING APPARATUS AND METHOD 审中-公开
标题翻译：水平光电测试装置和方法
公开(公告)号：WO2005086786A3
公开(公告)日：2006-06-22
申请号：PCT/US2005007473
申请日：2005-03-08
申请人： SIOPTICAL INC , GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , PIEDE DAVID , YANUSHEFSKI KATHERINE A
发明人： GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , PIEDE DAVID , YANUSHEFSKI KATHERINE A
IPC分类号： G01R31/26
CPC分类号： G02B6/30 , G02B6/34 , G02B2006/12107
摘要： A wafer-level testing arrangement for opto-electronic devices formed in a silicon-on-insulator (SOI) wafer structure utilizes a single opto-electronic testing element to perform both optical and electrical testing. Beam steering optics may be formed on the testing element and used to facilitate the coupling between optical probe signals and optical coupling elements (e.g., prism couplers, gratings) formed on the top surface of the SOI structure. The optical test signals are thereafter directed into optical waveguides formed in the top layer of the SOI structure. The optoelectronic testing element also comprises a plurality of electrical test pins that are positioned to contact a plurality of bondpad test sites on the opto-electronic device and perform electrical testing operations. The optical test signal results may be converted into electrical representations within the SOI structure and thus returned to the testing element as electrical signals.
摘要翻译：用于在绝缘体上硅（SOI）晶片结构中形成的光电器件的晶片级测试装置利用单个光电测试元件执行光学和电学测试。光束转向光学元件可以形成在测试元件上，并且用于促进光学探针信号与形成在SOI结构的顶表面上的光耦合元件（例如，棱镜耦合器，光栅）之间的耦合。此后，光学测试信号被引导到形成在SOI结构的顶层中的光波导中。光电测试元件还包括多个电测试引脚，其定位成接触光电器件上的多个接合焊盘测试点并进行电测试操作。光学测试信号结果可以转换为SOI结构内的电气表示，并因此作为电信号返回到测试元件。

4. 发明申请

WO2005057253A3 PLANAR WAVEGUIDE OPTICAL ISOLATOR IN THIN SILICON-ON-ISOLATOR (SOI) STRUCTURE 审中-公开
标题翻译：平面波导光隔离器（SILION-ON-ISOLATOR（SOI））结构
公开(公告)号：WO2005057253A3
公开(公告)日：2006-05-18
申请号：PCT/US2004040600
申请日：2004-12-06
申请人： SIOPTICAL INC , PIEDE DAVID , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A , WAGNER HARVEY
发明人： PIEDE DAVID , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A , WAGNER HARVEY
IPC分类号： G02B20060101 , G02B6/122 , G02B6/125 , G02B6/26 , G02B6/42
CPC分类号： G02B6/1228 , G02B6/125 , G02B6/4207
摘要： A planar optical isolator is formed within the silicon surface layer of an SOI structure. A forward-directed signal is applied to an input waveguiding section of the isolator and thereafter propagates through a non-reciprocal waveguide coupling region into an output waveguide section. A rearward-directed signal enters via the output waveguide section and is thereafter coupled into the non-reciprocal waveguide structure, where the geometry of the structure functions to couple only a small amount of the reflected signal into the input waveguide section. In one embodiment, the non-reciprocal structure comprises an N-way directional coupler (with one output waveguide, one input waveguide and N-1 isolating waveguides). In another embodiment, the non-reciprocal structure comprises a waveguide expansion region including a tapered, mode-matching portion coupled to the output waveguide and an enlarged, non-mode matching portion coupled to the input waveguide such that a majority of a reflected signal will be mismatched with respect to the input waveguide section. By cascading a number of such planar SOI-based structures, increased isolation can be achieved - advantageously within a monolithic arrangement.
摘要翻译：在SOI结构的硅表面层内形成平面光隔离器。正向信号被施加到隔离器的输入波导部分，然后通过非互易波导耦合区域传播到输出波导部分中。后向信号经由输出波导部分进入，然后耦合到不可逆波导结构中，其中结构的几何结构仅将少量的反射信号耦合到输入波导部分中。在一个实施例中，非互易结构包括N路定向耦合器（具有一个输出波导，一个输入波导和N-1个隔离波导）。在另一个实施例中，不可逆结构包括波导扩展区域，其包括耦合到输出波导的锥形模式匹配部分和耦合到输入波导的放大的非模式匹配部分，使得反射信号的大部分将相对于输入波导部分不匹配。通过级联多个这种平面的基于SOI的结构，可以实现增加的隔离 - 有利地在单片布置中。

5. 发明申请

WO2005094530A2 OPTICAL CROSSOVER IN THIN SILICON 审中-公开
标题翻译：薄硅玻璃的光学切割机
公开(公告)号：WO2005094530A2
公开(公告)日：2005-10-13
申请号：PCT/US2005009872
申请日：2005-03-24
申请人： SIOPTICAL INC , PIEDE DAVID , GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
发明人： PIEDE DAVID , GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
IPC分类号： G02B6/12 , G02B6/125
CPC分类号： G02B6/12004 , G02B6/125 , G02B2006/12061 , G02B2006/12097 , G02B2006/12104 , G02B2006/12176 , G02B2006/12195
摘要： An arrangement for providing optical crossovers between waveguides formed in an SOI-based structure utilize a patterned geometry in the SOI structure that is selected to reduce the effects of crosstalk in the area where the signals overlap. Preferably, the optical signals are fixed to propagate along orthogonal directions (or are of different wavelengths) to minimize the effects of crosstalk. The geometry of the SOI structure is patterned to include predetermined tapers and/or reflecting surfaces to direct/shape the propagating optical signals. The patterned waveguide regions within the optical crossover region may be formed to include overlying polysilicon segments to further shape the propagating beams and improve the coupling efficiency of the crossover arrangement.
摘要翻译：用于在基于SOI的结构中形成的波导之间提供光学交叉的装置利用SOI结构中的图案化几何形状，其被选择以减少信号重叠的区域中串扰的影响。优选地，光信号被固定以沿着正交方向（或不同波长）传播，以最小化串扰的影响。 SOI结构的几何形状被图案化以包括预定的锥形和/或反射表面以引导/形成传播的光学信号。光学交叉区域内的图案化波导区域可以形成为包括覆盖多晶硅段，以进一步使传播波束成形，并提高交叉布置的耦合效率。

6. 发明申请

WO2005051068A3 SILICON-BASED SCHOTTKY BARRIER INFRARED OPTICAL DETECTOR 审中-公开
标题翻译：基于硅的肖特基屏障红外光检测器
公开(公告)号：WO2005051068A3
公开(公告)日：2006-03-02
申请号：PCT/US2004038547
申请日：2004-11-17
申请人： SIOPTICAL INC , PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATHAK SOHAM , PIEDE DAVID , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
发明人： PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATHAK SOHAM , PIEDE DAVID , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
IPC分类号： G02B6/12 , G02B6/122 , H01L31/00 , H01L31/0224 , H01L31/0232 , H01L31/0392 , H01L31/108 , H01L31/153 , H01L27/14 , H01L31/06
CPC分类号： H01L31/108 , G02B6/12004 , G02B6/1228 , H01L31/022408 , H01L31/0232 , H01L31/03921 , H01L31/153 , Y02E10/50
摘要： A silicon-based IR photodetector [20] is formed within a silicon-on-insulator (SOI) structure [22] by placing a metallic strip [30] (preferably, a silicide) over a portion of an optical waveguide formed within a planar silicon surface layer [28] (i.e., "planar SOI layer") of the SOI structure, the planar SOI layer comprising a thickness of less than one micron. Room temperature operation of the photodetector is accomplished as a result of the relatively low dark current associated with the SOI-based structure and the ability to use a relatively small surface area silicide strip to collect the photocurrent. The planar SOI layer may be doped, and the geometry of the silicide strip may be modified, as desired, to achieve improved results over prior art silicon-based photodetectors.
摘要翻译：通过将金属条（30）（优选硅化物）放置在形成在平面内的光波导的一部分上，在绝缘体上硅（SOI）结构[22]内形成硅基红外光电检测器[20] 硅表面层[28]（即，“平面SOI层”），平面SOI层包含小于1微米的厚度。由于与基于SOI的结构相关联的相对较低的暗电流和使用相对小的表面积的硅化物带收集光电流的能力，光电检测器的室温操作是完成的。平面SOI层可以被掺杂，并且根据需要可以修改硅化物带的几何形状以实现相对于现有技术的硅基光电探测器的改进的结果。

7. 发明申请

WO2005077110A2 SILICON NANOTAPER COUPLERS AND MODE-MATCHING DEVICES 审中-公开
标题翻译：硅纳米粒子耦合器和模式匹配器件
公开(公告)号：WO2005077110A2
公开(公告)日：2005-08-25
申请号：PCT/US2005004507
申请日：2005-02-10
申请人： SIOPTICAL INC , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
发明人： GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
IPC分类号： G02B6/122 , G02B6/14 , G02B6/26 , G02B6/34 , G02B6/42
CPC分类号： G02B6/1228 , G02B6/4204
摘要： An arrangement for providing optical coupling between a free-space propagating optical signal and an ultrathin silicon waveguide formed in an upper silicon layer of a silicon-on-insulator (SOI) structure includes a silicon nanotaper structure formed in the upper silicon layer (SOI layer) of the SOI structure and coupled to the ultrathin silicon waveguide. A dielectric waveguide coupling layer, with a refractive index greater than the index of the dielectric insulating layer but less than the refractive index of silicon, is disposed so as to overly a portion of the dielectric insulating layer in a region where an associated portion of the SOI layer has been removed. An end portion of the dielectric waveguide coupling layer is disposed to overlap an end section of the silicon nanotaper to form a mode conversion region between the free-space propagating optical signal and the ultrathin silicon waveguide. A free-space optical coupling arrangement (such as a prism or grating) is disposed over the dielectric waveguide coupling layer and used to couple a propagating optical signal between free space and the dielectric waveguide coupling layer and thereafter into the ultrathin silicon waveguide.
摘要翻译：用于在自由空间传播的光信号和形成在绝缘体上硅（SOI））结构的上硅层中的超薄硅波导之间提供光耦合的装置包括形成在上硅层（SOI层）中的硅纳米锥结构）和耦合到超薄硅波导。具有大于介电绝缘层的折射率但小于硅的折射率的折射率的介质波导耦合层被布置成过度地在介电绝缘层的一部分中的相关部分 SOI层已被去除。电介质波导耦合层的端部设置成与硅纳米锥的端部部分重叠以在自由空间传播的光信号和超薄硅波导之间形成模式转换区域。自由空间光耦合装置（诸如棱镜或光栅）设置在介质波导耦合层之上，用于将传播的光信号耦合在自由空间与介质波导耦合层之间，然后耦合到超薄硅波导中。

8. 发明申请

WO2004095112A3 CMOS-COMPATIBLE INTEGRATION OF SILICON-BASED OPTICAL DEVICES WITH ELECTRONIC DEVICES 审中-公开
标题翻译：基于硅的光电器件与电子器件的CMOS兼容集成
公开(公告)号：WO2004095112A3
公开(公告)日：2005-03-31
申请号：PCT/US2004012236
申请日：2004-04-21
申请人： SIOPTICAL INC , PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
发明人： PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
IPC分类号： G02B6/12 , G02F1/025 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L27/146 , H01L31/12 , H01L21/76
CPC分类号： H01L27/14689 , G02B6/12004 , G02F1/025 , H01L21/84 , H01L27/1203 , H01L27/13 , H01L27/14636 , H01L27/14643 , H01L31/12
摘要： A conventional CMOS fabrication technique is used to integrate the formation of passive optical devices and active electro-optic devices with standard CMOS electrical devices on a common SOI structure. The electrical devices and optical devices share the same surface SOI layer (a relatively thin, single crystal silicon layer), with various required semiconductor layers then formed over the SOI layer. In some instances, a set of process steps may be used to simultaneously form regions in both electrical and optical devices. Advantageously, the same metallization process is used to provide electrical connections to the electrical devices and the active electro-optic devices.
摘要翻译：传统的CMOS制造技术被用于将无源光学器件和有源电光器件与标准CMOS电气器件的形成集成在公共SOI结构上。电子器件和光学器件共享相同的表面SOI层（相对薄的单晶硅层），然后在SOI层上形成各种所需的半导体层。在一些情况下，可以使用一组处理步骤来同时在电和光学器件中形成区域。有利地，使用相同的金属化工艺来提供到电气装置和主动电光装置的电连接。

9. 发明申请

WO2005024469A3 INTERFACING MULTIPLE WAVELENGTH SOURCES TO THIN OPTICAL WAVEGUIDES UTILIZING EVANESCENT COUPLING 审中-公开
标题翻译：将多个波长源连接起来，以减少利用光纤耦合的光波导
公开(公告)号：WO2005024469A3
公开(公告)日：2005-12-22
申请号：PCT/US2004028829
申请日：2004-09-07
申请人： SIOPTICAL INC , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
发明人： GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
IPC分类号： G02B20060101 , G02B6/34
CPC分类号： G02B6/12007 , G02B6/124 , G02B6/34
摘要： An arrangement for achieving and maintaining high efficiency coupling of light between a multi-wavelength optical signal and a relatively thin (e.g., sub-micron) silicon optical waveguide uses a prism coupler in association with an evanescent coupling layer. A grating structure having a period less than the wavelengths of transmission is formed in the coupling region (either formed in the silicon waveguide, evanescent coupling layer, prism coupler, or any combination thereof) so as to increase the effective refractive index "seen" by the multi -wavelength optical signal in the area where the beam exiting/entering the prism coupler intercepts the waveguide surface (referred to as the "prism coupling surface"). The period and/or duty cycle of the grating can be controlled to modify the effective refractive index profile in the direction away from the coupling region so as to reduce the effective refractive index from the relatively high value useful in multiwavelength coupling to the lower value associated with maintaining confinement of the optical signals within the surface waveguide structure, thus reducing reflections along the transition region.
摘要翻译：用于实现和保持多波长光信号和相对薄（例如亚微米）硅光波导之间的高效率耦合的布置使用与渐逝耦合层相关联的棱镜耦合器。在耦合区域（或者形成在硅波导，ev逝耦合层，棱镜耦合器或其任何组合中）形成具有小于透射波长的周期的光栅结构，以便增加“看到”的有效折射率在离开/进入棱镜耦合器的光束拦截波导表面（称为“棱镜耦合表面”）的区域中的多波长光信号。可以控制光栅的周期和/或占空比以在远离耦合区域的方向上改变有效折射率分布，以便将有效折射率从在多波长耦合中可用的相对高的值减小到相关联的较低值同时保持光信号在表面波导结构内的约束，从而减少沿着过渡区域的反射。

10. 发明申请

WO2004092783A3 BEAM SHAPING AND PRACTICAL METHODS OF REDUCING LOSS ASSOCIATED WITH MATING EXTERNAL SOURCES AND OPTICS TO THIN SILICON WAVEGUIDES 审中-公开
标题翻译：光束形成和实际方法减少与外部光源相关的损失和光学薄膜波长
公开(公告)号：WO2004092783A3
公开(公告)日：2005-05-19
申请号：PCT/US2004011146
申请日：2004-04-12
申请人： SIOPTICAL INC , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
发明人： GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
IPC分类号： G02B6/34 , G02B6/42 , G02B6/26
CPC分类号： G02B6/425 , G02B6/34 , G02B6/4226
摘要： A practical realization for achieving and maintaining high-efficiency transfer of light from input and output free-space optics to a high-index waveguide of submicron thickness is described. The required optical elements and methods of fabricating, aligning, and assembling these elements are discussed. Maintaining high coupling efficiency reliably over realistic ranges of device operating parameters is discussed in the context of the preferred embodiments.
摘要翻译：描述了实现并保持从输入和输出自由空间光学器件到亚微米厚度的高折射率波导的高效率传输的实际实现。讨论了所需的光学元件和制造，对准和组装这些元件的方法。在优选实施例的上下文中讨论在设备操作参数的实际范围内可靠地维持高耦合效率。

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