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1. 发明申请

WO2011003003A1 METAL DOPED SEMICONDUCTOR NANOCRYSTALS AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：金属掺杂半导体纳米晶及其制备方法
公开(公告)号：WO2011003003A1
公开(公告)日：2011-01-06
申请号：PCT/US2010/040798
申请日：2010-07-01
申请人： THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS , PENG, Xiaogang , XIE, Renguo
发明人： PENG, Xiaogang , XIE, Renguo
IPC分类号： C09K11/02 , C09K11/70 , C09K11/88
CPC分类号： C09K11/02 , C09K11/70 , C09K11/883
摘要： Doped semiconductor nanocrystals and methods of making the same are provided.
摘要翻译：提供掺杂的半导体纳米晶体及其制备方法。

2. 发明申请

WO2009152265A1 INDIUM ARSENIDE NANOCRYSTALS AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：纳米复合纳米晶体及其制备方法
公开(公告)号：WO2009152265A1
公开(公告)日：2009-12-17
申请号：PCT/US2009/046942
申请日：2009-06-10
申请人： THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS , PENG, Xiaogang , XIE, Renguo
发明人： PENG, Xiaogang , XIE, Renguo
IPC分类号： C09K11/02 , C09K11/08
CPC分类号： C09K11/02 , C09K11/7492 , Y10T428/2982
摘要： The present invention provides high quality monodisperse or substantially monodisperse InAs nanocrystals in the as-prepared state. In some embodiments, the as-prepared substantially monodisperse InAs nanocrystals demonstrate a photoluminescence of between about 700 nm and 1400 nm.
摘要翻译：本发明提供在准备状态下的高质量单分散或基本上单分散的InAs纳米晶体。在一些实施方案中，所制备的基本上单分散的InAs纳米晶体表现出约700nm和1400nm之间的光致发光。

3. 发明申请

WO2006116337A2 DOPED SEMICONDUCTOR NANOCRYSTALS AND METHODS OF MAKING SAME 审中-公开
公开(公告)号：WO2006116337A2
公开(公告)日：2006-11-02
申请号：PCT/US2006015518
申请日：2006-04-25
申请人： UNIV ARKANSAS , PRADHAN NARAYAN , PENG XIAOGANG
发明人： PRADHAN NARAYAN , PENG XIAOGANG
IPC分类号： A61K31/19
CPC分类号： C09K11/02 , C09K11/574 , C09K11/584 , C09K11/883 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995
摘要： A method of synthesizing doped semiconductor nanocrystals. In one embodiment, the method includes the steps of combining a metal oxide or metal salt precursor, a ligand, and a solvent to form a metal complex in a reaction vessel; admixing an anionic precursor with the metal complex at a first temperature, T1, sufficient to form a plurality of host nanocrystals; doping a metal dopant onto the plurality of the host nanocrystals at a second temperature, T2, such that a layer of the metal dopant is formed substantially over the surface of a host nanocrystal that receives a metal dopant; and adding a mixture having the anionic precursor and the metal oxide or metal salt precursor at a third temperature, T3, into the reaction vessel to allow regrowth of host nanocrystals on the surface of the layer of the metal dopant formed substantially over the surface of a host nanocrystal that receives a metal dopant to form a plurality of doped nanocrystals, wherein the doped nanocrystals show a characteristic of semiconductor.
摘要翻译：一种合成掺杂半导体纳米晶体的方法。在一个实施方案中，该方法包括将金属氧化物或金属盐前体，配体和溶剂组合以在反应容器中形成金属络合物的步骤; 在第一温度T1下将阴离子前体与所述金属络合物混合，所述第一温度T1足以形成多个主体纳米晶体; 在第二温度T2下在多个主体纳米晶体上掺杂金属掺杂剂，使得金属掺杂剂的层基本上形成在接收金属掺杂剂的主体纳米晶体的表面上; 并在第三温度T3下将具有阴离子前体和金属氧化物或金属盐前体的混合物加入到反应容器中，以允许主体纳米晶体在基本上形成在金属掺杂剂表面上的金属掺杂剂的表面上的再生长主体纳米晶体，其接收金属掺杂剂以形成多个掺杂的纳米晶体，其中所述掺杂的纳米晶体显示出半导体的特性。

4. 发明申请

WO2004066361A3 MONODISPERSE CORE/SHELL AND OTHER COMPLEX STRUCTURED NANOCRYSTALS AND METHODS OF PREPARING THE SAME 审中-公开
公开(公告)号：WO2004066361A3
公开(公告)日：2004-08-05
申请号：PCT/US2004/001895
申请日：2004-01-22
申请人： THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS , PENG, Xiaogang , LI, Jianquing , BATTAGLIA, David , WANG, Yongqiang, Andrew , WANG, Yunjun
发明人： PENG, Xiaogang , LI, Jianquing , BATTAGLIA, David , WANG, Yongqiang, Andrew , WANG, Yunjun
IPC分类号： B32B5/16
摘要： The present invention provides new compositions containing naear ly monodisperse colloidal core/shell semiconductor nanocrystals with high photoluminescence quantum yields (PL QY), as well as other complex structured semiconductor nanocrystals. This invention also provides new synthetic methods for preparing these nanocrystals, and new devices comprising these compositions. In addition to core/shell semiconductor nanocrystals, this patent application also provides complex semiconductor nanostructures, quantum shells, quantum wells, doped nanocrystals, and other multiple-shelled semiconductor nanocrystals.

5. 发明申请

WO2004031732A2 NANOCRYSTALS IN LIGAND BOXES EXHIBITING ENHANCED CHEMICAL, PHOTOCHEMICAL, AND THERMAL STABILITY, AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：显示增强化学，光化学和热稳定性的配体胶囊中的纳米晶体及其制备方法
公开(公告)号：WO2004031732A2
公开(公告)日：2004-04-15
申请号：PCT/US2003/031461
申请日：2003-10-03
申请人： THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS , PENG, Xiaogang , CHEN, Haiyan , GUO, Wenzhou , WANG, Y., Andrew
发明人： PENG, Xiaogang , CHEN, Haiyan , GUO, Wenzhou , WANG, Y., Andrew
IPC分类号： G01N
CPC分类号： B82Y30/00 , B22F2999/00 , B82Y15/00 , C01B9/00 , C01B13/145 , C01B19/007 , C01G11/02 , C01P2002/82 , C01P2002/84 , C01P2002/86 , C01P2002/89 , C01P2004/04 , C01P2004/64 , C01P2004/80 , C01P2006/37 , C09K11/02 , C09K11/565 , C09K11/883 , C30B7/00 , C30B7/005 , C30B29/605 , G01N33/545 , G01N33/588 , B22F1/0007 , B22F1/0018
摘要： Dendron ligands or other branched ligands with cross-linkable groups were coordinated to colloidal inorganic nanoparticles, including nanocrystals, and substantially globally cross-linked through different strategies, such as ring-closing metathesis (RCM), dendrimer-bridging methods, and the like. This global cross-linking reaction sealed each nanocrystal within a dendron box to yield box-nanocrystals which showed dramatically enhanced stability against chemical, photochemical and thermal treatments in comparison to the non-cross-linked dendron-nanocrystals. Empty dendron boxes possessing a very narrow size distribution were formed by the dissolution of the inorganic nanocrystals contained therein upon acid or other etching treatments.
摘要翻译： Dendron配体或具有可交联基团的其它支链配体与胶体无机纳米颗粒（包括纳米晶体）配位，并通过不同的策略（例如闭环复分解（RCM）），树枝状聚合物桥接方法等进行基本全局交联。这种全球交联反应将每个纳米晶体密封在树枝状体内以产生盒纳米晶体，与非交联树枝状纳米晶体相比，显示出显着增强的对化学，光化学和热处理的稳定性。通过在酸或其他蚀刻处理中所含的无机纳米晶体的溶解形成具有非常窄尺寸分布的空的树枝状结构。

6. 发明申请

WO2006116337A3 DOPED SEMICONDUCTOR NANOCRYSTALS AND METHODS OF MAKING SAME 审中-公开
公开(公告)号：WO2006116337A3
公开(公告)日：2006-11-02
申请号：PCT/US2006/015518
申请日：2006-04-25
申请人： BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS , PRADHAN, Narayan , PENG, Xiaogang
发明人： PRADHAN, Narayan , PENG, Xiaogang
IPC分类号： H01L21/00 , H01L31/06
摘要： A method of synthesizing doped semiconductor nanocrystals. In one embodiment, the method includes the steps of combining a metal oxide or metal salt precursor, a ligand, and a solvent to form a metal complex in a reaction vessel; admixing an anionic precursor with the metal complex at a first temperature, T1, sufficient to form a plurality of host nanocrystals; doping a metal dopant onto the plurality of the host nanocrystals at a second temperature, T2, such that a layer of the metal dopant is formed substantially over the surface of a host nanocrystal that receives a metal dopant; and adding a mixture having the anionic precursor and the metal oxide or metal salt precursor at a third temperature, T3, into the reaction vessel to allow regrowth of host nanocrystals on the surface of the layer of the metal dopant formed substantially over the surface of a host nanocrystal that receives a metal dopant to form a plurality of doped nanocrystals, wherein the doped nanocrystals show a characteristic of semiconductor.

7. 发明申请

WO2012094664A3 COLLOIDAL SEMICONDUCTOR NANOCRYSTALS HAVING 1-DIMENSIONAL QUANTUM CONFINEMENT AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：具有一维量子限制的圆柱半导体纳米晶体及其制造方法
公开(公告)号：WO2012094664A3
公开(公告)日：2012-08-30
申请号：PCT/US2012020620
申请日：2012-01-09
申请人： UNIV ARKANSAS , PENG XIAOGANG , LI ZHENG
发明人： PENG XIAOGANG , LI ZHENG
IPC分类号： C30B29/48 , C30B29/64
CPC分类号： B82Y30/00 , C30B7/14 , C30B29/40 , C30B29/48 , C30B29/605
摘要： In some embodiments, a nanocrystal described herein comprises a semiconductor material MX, wherein M is a group II or a group III element and X is a group V or a group VI element to provide a Il/vI compound or a IIl/v compound, the nanocrystal having lateral dimensions and a vertical dimension having the shortest axis, wherein surfaces of the nanocrystal normal or substantially normal to the axis of the vertical dimension comprise a layer of M ions passivated by a counter ion chemical species, such as a CdSe or CdS nanocrystal disc.
摘要翻译：在一些实施方案中，本文所述的纳米晶体包含半导体材料MX，其中M是II族或III族元素，X是V族或VI族元素以提供II / vI化合物或IIl / v化合物，所述纳米晶体具有侧向尺寸和具有最短轴线的垂直尺寸，其中所述垂直尺寸的垂直或基本上垂直于垂直尺寸的纳米晶体的表面包括由抗衡离子化学物质如CdSe或CdS钝化的M离子层纳米晶圆盘

8. 发明申请

WO2012094664A2 COLLOIDAL SEMICONDUCTOR NANOCRYSTALS HAVING 1-DIMENSIONAL QUANTUM CONFINEMENT AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：具有一维量子配合的胶体半导体纳米晶体及其制备方法
公开(公告)号：WO2012094664A2
公开(公告)日：2012-07-12
申请号：PCT/US2012/020620
申请日：2012-01-09
申请人： THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS , PENG, Xiaogang , LI, Zheng
发明人： PENG, Xiaogang , LI, Zheng
IPC分类号： C30B29/48 , C30B29/64
CPC分类号： B82Y30/00 , C30B7/14 , C30B29/40 , C30B29/48 , C30B29/605
摘要： In some embodiments, a nanocrystal described herein comprises a semiconductor material MX, wherein M is a group II or a group III element and X is a group V or a group VI element to provide a II/VI compound or a III/V compound, the nanocrystal having lateral dimensions and a vertical dimension having the shortest axis, wherein surfaces of the nanocrystal normal or substantially normal to the axis of the vertical dimension comprise a layer of M ions passivated by a counter ion chemical species.
摘要翻译：在一些实施方案中，本文所述的纳米晶体包含半导体材料MX，其中M为II族或III族元素，X为V族或VI族元素以提供II / VI化合物或III / V化合物，纳米晶体具有侧向尺寸和具有最短轴线的垂直尺寸，其中垂直尺寸的垂直或基本垂直的纳米晶体的表面包括被抗衡离子化学物质钝化的M个离子层。

9. 发明申请

WO2004066361A2 MONODISPERSE CORE/SHELL AND OTHER COMPLEX STRUCTURED NANOCRYSTALS AND METHODS OF PREPARING THE SAME 审中-公开
标题翻译：单体核/壳和其他复合结构纳米晶体及其制备方法
公开(公告)号：WO2004066361A2
公开(公告)日：2004-08-05
申请号：PCT/US2004001895
申请日：2004-01-22
申请人： UNIV ARKANSAS , PENG XIAOGANG , LI JIANQUING , BATTAGLIA DAVID , WANG YONGQIANG ANDREW , WANG YUNJUN
发明人： PENG XIAOGANG , LI JIANQUING , BATTAGLIA DAVID , WANG YONGQIANG ANDREW , WANG YUNJUN
IPC分类号： B32B1/00 , C09K11/02 , C09K11/08 , C09K11/56 , C09K11/70 , C09K11/74 , C09K11/88 , C30B7/00 , C30B29/60 , G01N33/58 , H01L33/18 , H01L33/28 , H01S5/30 , H05B33/14 , H01L
CPC分类号： C09K11/025 , B82Y15/00 , B82Y30/00 , C09K11/02 , C09K11/565 , C09K11/703 , C09K11/7414 , C09K11/7492 , C09K11/883 , C30B7/00 , C30B29/605 , G01N33/588 , H01L31/0352 , H01L31/036 , H01L33/18 , H01L33/28 , H01S3/169 , H01S5/30 , Y10T428/2991
摘要： The present invention provides new compositions containing naear ly monodisperse colloidal core/shell semiconductor nanocrystals with high photoluminescence quantum yields (PL QY), as well as other complex structured semiconductor nanocrystals. This invention also provides new synthetic methods for preparing these nanocrystals, and new devices comprising these compositions. In addition to core/shell semiconductor nanocrystals, this patent application also provides complex semiconductor nanostructures, quantum shells, quantum wells, doped nanocrystals, and other multiple-shelled semiconductor nanocrystals.
摘要翻译：本发明提供了具有高光致发光量子产率（PL QY）以及其它复合结构化半导体纳米晶体的纳豆单分散胶体核/壳半导体纳米晶体的新组合物。本发明还提供了用于制备这些纳米晶体的新的合成方法，以及包含这些组合物的新装置。除了核/壳半导体纳米晶体之外，该专利申请还提供复杂的半导体纳米结构，量子壳，量子阱，掺杂的纳米晶体和其他多壳半导体纳米晶体。

10. 发明申请

WO03050329A2 HIGH QUALITY COLLOIDAL NANOCRYSTALS AND METHODS OF PREPARATION OF THE SAME IN NON-COORDINATING SOLVENTS 审中-公开
标题翻译：高品质胶体纳米晶体及其在非协调溶液中的制备方法
公开(公告)号：WO03050329A2
公开(公告)日：2003-06-19
申请号：PCT/US0224215
申请日：2002-07-30
申请人： UNIV ARKANSAS , PENG XIAOGANG , YU WEIYONG , BATTAGLIA DAVID
发明人： PENG XIAOGANG , YU WEIYONG , BATTAGLIA DAVID
IPC分类号： C09K11/56 , C09K11/08 , C09K11/54 , C09K11/62 , C30B5/00 , H01L31/04 , H01L33/00 , H01S5/30 , C30B
CPC分类号： C30B5/00 , C30B7/00 , C30B29/40 , C30B29/48 , C30B29/605 , G01N15/0205 , G01N2015/0038
摘要： The present invention provides substantially monodisperse colloidal nanocrystals and new preparative methods for the synthesis of substantially monodisperse colloidal nanocrystals. These synthetic methods afford the ability to tune nanocrystal size and size distribution. By using non-coordinating solvents in the synthetic process, these procedures constitute easier, less expensive, safer, and more environmentally "green" methods than those currently in use. This invention is generally applicable to any II-VI or III-V semiconductor material, and may be useful in generating metal-nonmetal compounds involving transition metals as well.
摘要翻译：本发明提供基本上单分散的胶态纳米晶体和用于合成基本上单分散的胶体纳米晶体的新的制备方法。这些合成方法提供了调整纳米晶体尺寸和尺寸分布的能力。通过在合成过程中使用非配位溶剂，这些方法比目前使用的方法更容易，更便宜，更安全，更环保的“绿色”方法。本发明通常适用于任何II-VI或III-V半导体材料，并且也可用于产生涉及过渡金属的金属 - 非金属化合物。

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