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1. 发明申请

WO2020000228A1 THERMAL GAP FILLER AND ITS APPLICATION FOR BATTERY MANAGEMENT SYSTEM 审中-公开
公开(公告)号：WO2020000228A1
公开(公告)日：2020-01-02
申请号：PCT/CN2018/092983
申请日：2018-06-27
申请人： DOW SILICONES CORPORATION , ZHENG, Yan , CAO, Zhongwei , HUANG, Qiang , YANG, Rui , TEIXEIRA, Sandrine , XIE, Lujing
发明人： ZHENG, Yan , CAO, Zhongwei , HUANG, Qiang , YANG, Rui , TEIXEIRA, Sandrine , XIE, Lujing
IPC分类号： C08L83/07 , C08K3/08
摘要： A thermally conductive silicone composition comprises: (A) an alkenyl group-containing organopolysiloxane; (B) an organohydrogenpoly siloxane having an average of two to four silicon-bonded hydrogen mponent (B) is 0.2 to 5 moles per mole of the alkenyl groups in component (A), and at least two of the silicon-bonded hydrogen atoms are located on the side chains of the molecule; (C) a hydrosilylation reaction catalyst; (D) a thermally conductive filler; (E) an alkoxysilane having an alkyl group containing 6 or more carbon atoms in a molecule; and (F) glass beads. A thermally conductive member is produced from the thermally conductive silicone composition. An electronic device has the thermally conductive member and a manufacturing method of the electronic device includes using the thermally conductive silicone composition.

2. 发明申请

WO2013013009A2 2',3'-DIDEOXY-2'-a-FLUORO-2'-ß-C-METHYLNUCLEOSIDES AND PRODRUGS THEREOF 审中-公开
标题翻译： 2'，3'-DIDEOXY-2'-a-FLUORO-2'-β-C-甲基核苷酸及其制备物
公开(公告)号：WO2013013009A2
公开(公告)日：2013-01-24
申请号：PCT/US2012047338
申请日：2012-07-19
申请人： NANJING MOLECULAR RES INC , HUANG QIANG , ZHOU SUPING
发明人： HUANG QIANG , ZHOU SUPING
IPC分类号： C07H19/213
CPC分类号： C07H19/20 , A61K31/7076 , A61K31/708 , A61K45/06 , C07D307/20 , C07D307/33 , C07H15/18 , C07H19/16 , C07H19/207
摘要： The present invention provides 2',3'-dideoxy-2'-fluoro-a-2'-C- methylnucleosides, their prodrugs, and therapeutic use thereof as anti-HCV agents. The present invention also provides processes and intermediates for the preparation of the nucleosides disclosed herein.
摘要翻译：本发明提供2'，3'-二脱氧-2'-氟-a-2'-C-甲基核苷，其前药及其作为抗HCV剂的治疗用途。本发明还提供了制备本文所公开的核苷的方法和中间体。

3. 发明申请

WO2008085805A1 FORMATION OF VERTICAL DEVICES BY ELECTROPLATING 审中-公开
标题翻译：通过电镀形成垂直装置
公开(公告)号：WO2008085805A1
公开(公告)日：2008-07-17
申请号：PCT/US2008/000003
申请日：2008-01-02
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , DELIGIANNI, Hariklia , HUANG, Qiang , HUMMEL, John, P. , ROMANKIW, Lubomyr, T. , ROTHWELL, Mary, B.
发明人： DELIGIANNI, Hariklia , HUANG, Qiang , HUMMEL, John, P. , ROMANKIW, Lubomyr, T. , ROTHWELL, Mary, B.
IPC分类号： H01H51/00
CPC分类号： H01L21/76879 , H01L21/2885 , Y10S205/925
摘要： The present invention is related to a method for forming vertical conductive structures by electroplating. Specifically, a template structure is first formed, which includes a substrate, a discrete metal contact pad located on the substrate surface, an inter-level dielectric (ILD) layer over both the discrete metal contact pad and the substrate, and a metal via structure extending through the ILD layer onto the discrete metal contact pad. Next, a vertical via is formed in the template structure, which extends through the ILD layer onto the discrete metal contact pad. A vertical conductive structure is then formed in the vertical via by electroplating, which is conducted by applying an electroplating current to the discrete metal contact pad through the metal via structure. Preferably, the template structure comprises multiple discrete metal contact pads, multiple metal via structures, and multiple vertical vias for formation of multiple vertical conductive structures.
摘要翻译：本发明涉及通过电镀形成垂直导电结构的方法。具体地，首先形成模板结构，其包括衬底，位于衬底表面上的离散金属接触焊盘，分立金属接触焊盘和衬底两者之间的级间电介质（ILD）层，以及金属通孔结构延伸穿过ILD层到分立的金属接触垫上。接下来，在模板结构中形成垂直通孔，其延伸穿过ILD层到分立的金属接触垫上。然后通过电镀在垂直通孔中形成垂直导电结构，电镀通过通过金属通孔结构将电镀电流施加到离散金属接触焊盘来进行。优选地，模板结构包括多个分立的金属接触焊盘，多个金属通孔结构以及用于形成多个垂直导电结构的多个垂直通孔。

4. 发明申请

WO2013181305A1 REAL TIME DETECTION OF ASPIRATION SHORT SHOTS USING PRESSURE SIGNAL 审中-公开
标题翻译：使用压力信号实时检测吸气短裤
公开(公告)号：WO2013181305A1
公开(公告)日：2013-12-05
申请号：PCT/US2013/043203
申请日：2013-05-30
申请人： SIEMENS HEALTHCARE DIAGNOSTICS INC. , HSIEH, Pei-Ying , HUANG, Qiang
发明人： HSIEH, Pei-Ying , HUANG, Qiang
IPC分类号： G01F25/00
CPC分类号： A61B1/012 , G01F22/02 , G01F25/0084 , G01N35/1016
摘要： Embodiments relate to detecting insufficient volume of a fluid aspiration. During aspiration of fluids, a pressure trace is obtained using a pressure transducer. An algorithm is applied to detect short shot (i.e., insufficient aspiration) instances utilizing characteristics of the pressure trace. In addition, the fluid probe geometry may be optimized to improve the accuracy of the detection, and temperature may be obtained to correct the pressure trace to account for fluid viscosity and thereby further improve the accuracy.
摘要翻译：实施例涉及检测流体抽吸的体积不足。在流体吸入期间，使用压力传感器获得压力曲线。应用算法来利用压力迹线的特征来检测短枪（即，不足的抽吸）实例。此外，流体探针几何形状可以被优化以提高检测的精度，并且可以获得温度以校正压力迹线以考虑流体粘度，从而进一步提高精度。

5. 发明申请

WO2013038334A1 PHOTOVOLTAIC DEVICES 审中-公开
标题翻译：光伏器件
公开(公告)号：WO2013038334A1
公开(公告)日：2013-03-21
申请号：PCT/IB2012/054715
申请日：2012-09-11
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , IBM JAPAN LIMITED , HUANG, Qiang
发明人： HUANG, Qiang
IPC分类号： H01L31/068 , H01L31/0224
CPC分类号： H01L31/022425 , C25D3/38 , C25D5/12 , C25D5/50 , C25D7/12 , Y02E10/50
摘要： A photovoltaic device, such as a solar cell, having improved performance is provided. In one embodiment, the photovoltaic device includes a multimetal semiconductor alloy layer located on exposed portions of a front side surface of a semiconductor substrate. The multimetal semiconductor alloy layer includes at least a first elemental metal that forms an alloy with a semiconductor material, and a second elemental metal that differs from the first elemental metal and that does not form an alloy with a semiconductor material at the same temperature as the first elemental metal. The photovoltaic device further includes a copper- containing layer located atop the multimetal semiconductor alloy layer.
摘要翻译：提供了具有改进性能的光电器件，例如太阳能电池。在一个实施例中，光伏器件包括位于半导体衬底的前侧表面的暴露部分上的多金属半导体合金层。多金属半导体合金层至少包含与半导体材料形成合金的第一元素金属和与第一元素金属不同的第二元素金属，并且在与第一元素金属相同的温度下不与半导体材料形成合金第一元素金属。光伏器件还包括位于多金属半导体合金层顶部的含铜层。

6. 发明申请

WO2012052657A3 CHECKING THE STOICHIOMETRY OF I-III-VI LAYERS FOR USE IN PHOTOVOLTAICS USING IMPROVED ELECTROLYSIS CONDITIONS 审中-公开
标题翻译：使用改进的电解质条件检查I-III-VI层在光伏电池中的使用的测量
公开(公告)号：WO2012052657A3
公开(公告)日：2012-08-30
申请号：PCT/FR2011052363
申请日：2011-10-10
申请人： NEXCIS , GRAND PIERRE-PHILIPPE , JAIME SALVADOR , DE GASQUET PHILIPPE , DELIGIANNI HARIKLIA , ROMANKIW LUBOMYR T , VAIDYANATHAN RAMAN , HUANG QIANG , AHMED SHAFAAT
发明人： GRAND PIERRE-PHILIPPE , JAIME SALVADOR , DE GASQUET PHILIPPE , DELIGIANNI HARIKLIA , ROMANKIW LUBOMYR T , VAIDYANATHAN RAMAN , HUANG QIANG , AHMED SHAFAAT
IPC分类号： H01L31/032 , C25D5/10 , C25D5/50 , C25D7/00 , C25D7/06 , C25D21/10 , C25D21/12 , G01B5/06 , G01B11/06 , G01B21/08 , H01L31/0216 , H01L31/0272
CPC分类号： H01L31/0264 , C25D5/10 , C25D7/0692 , C25D21/12 , H01L21/02521 , H01L31/0322 , Y02E10/541
摘要： The invention relates to manufacturing a I-III-VI compound in the form of a thin film for use in photovoltaics, including the steps of: a) electrodepositing a thin-film structure, consisting of I and/or III elements, onto the surface of an electrode that forms a substrate (SUB); and b) incorporating at least one VI element into the structure so as to obtain the I-III-VI compound. According to the invention, the electrodeposition step comprises checking that the uniformity of the thickness of the thin film varies by no more than 3% over the entire surface of the substrate receiving the deposition.
摘要翻译：本发明涉及制造用于光伏电池的薄膜形式的I-III-VI化合物，包括以下步骤：a）将由I和/或III元素组成的薄膜结构电沉积到表面上形成衬底（SUB）的电极; 和b）将至少一种VI元素掺入结构中，以获得I-III-VI化合物。根据本发明，电沉积步骤包括检查薄膜厚度的均匀性在接收沉积物的基底的整个表面上变化不超过3％。

7. 发明申请

WO2012022342A1 HALBLEITERBAUELEMENT 审中-公开
标题翻译：半导体部件
公开(公告)号：WO2012022342A1
公开(公告)日：2012-02-23
申请号：PCT/DE2011/075172
申请日：2011-07-21
申请人： NOVALED AG , DOROK, Sascha , LESSMANN, Rudolf , CANZLER, Tobias , HUANG, Qiang , KÖHN, Christiane
发明人： DOROK, Sascha , LESSMANN, Rudolf , CANZLER, Tobias , HUANG, Qiang , KÖHN, Christiane
IPC分类号： H01L51/10 , H01L51/05
CPC分类号： H01L51/05 , H01L51/002 , H01L51/0562 , H01L51/105
摘要： Die Erfindung betrifft ein Halbleiterbauelement mit einer Schichtanordnung mit einer Elektrode (20a, 20b) aus einem Elektrodenmaterial, einer organischen Halbleiterschicht (22) auss organischem Material, einer Injektionsschicht (21), welche zwischen der Elektrode und der organischen Halbleiterschicht angeordnet ist und aus einem molekularen Dotierungsmaterial besteht, das ein elektrischer Dotand für das organische Material der organischen Halbleiterschicht ist, und einer Zusatzschicht (25), welche auf der der Elektrode zugewandten Seite der Injektionsschicht an der Injektionsschicht angeordnet ist und aus einem Zusatzmaterial besteht, welches bei Kontakt mit dem molekularen Dotierungsmaterial dessen Dotierungsaffinität bezüglich des organischen Materials der organischen Halbleiterschicht verändert, wobei in der Injektionsschicht ein Schichtbereich mit einer ersten Dotierungsaffinität des molekularen Dotierungsmaterials bezüglich des organischen Materials und ein weiterer Schichtbereich mit einer zweiten, im Vergleich zur ersten Dotierungsaffinität kleineren Dotierungsaffinität des molekularen Dotierungsmaterials bezüglich des organischen Materials gebildet sind. Des Weiteren betrifft die Erfindung ein Verfahren zum Herstellen eines Halbleiterbauelementes sowie die Verwendung eines Halbleiterelementes.
摘要翻译：本发明涉及一种具有层结构的半导体元件与电极（20A，20B）的电极材料的auss有机材料，有机半导体层（22），注射布置在电极与有机半导体层之间，并且从一个分子层（21）掺杂材料，该材料为被布置在面向在注入层的注入层的电极侧的侧面和由添加剂材料的有机半导体层的有机材料和附加层（25）的电掺杂剂，其在与分子掺杂材料接触其掺杂改变了有机半导体层的有机材料，其中，所述注入层中具有相对于所述有机材料和另外的层B中的分子掺杂材料的第一掺杂亲和力的层区域的相对亲和力 REA与第二形成，相对于分子掺杂材料的相对于所述有机材料的第一掺杂剂的亲和性较小的掺杂亲和力。此外，本发明涉及一种用于制造半导体器件以及使用的半导体元件的方法。

8. 发明申请

WO2010009232A3 METHODS AND SYSTEMS FOR TURBO DECODING IN A WIRELESS COMMUNICATION SYSTEM 审中-公开
标题翻译：无线通信系统中涡轮解码的方法与系统
公开(公告)号：WO2010009232A3
公开(公告)日：2010-07-22
申请号：PCT/US2009050695
申请日：2009-07-15
申请人： QUALCOMM INC , HUANG QIANG , SIM BOK TAE , PARK JONG HYEON
发明人： HUANG QIANG , SIM BOK TAE , PARK JONG HYEON
IPC分类号： H04L1/00
CPC分类号： H03M13/2957 , H03M13/3905 , H03M13/3994 , H03M13/6544 , H04L1/005 , H04L1/0054 , H04L1/0066
摘要： Certain embodiments provide methods and apparatus for decoding a string of data bits, encoded with a turbo encoding scheme, in a wireless communication system. One or more a-priori bit values corresponding to expected bit values at one or more identified bit locations in the string of data bits may be identified. One or more branch metrics used in a turbo decoding scheme may be manipulated to effectively remove decoding paths, from a collection of possible decoding paths, based at least on the identified one or more a-priori bit values, resulting in one or more remaining decoding paths. The string of data bits may be decoded by selecting a decoding path from the one or more remaining decoding paths.
摘要翻译：某些实施例提供了用于在无线通信系统中解码用turbo编码方案编码的数据比特串的方法和装置。可以识别对应于数据比特串中的一个或多个所识别的比特位置处的期望比特值的一个或多个先验比特值。可以操纵在turbo解码方案中使用的一个或多个分支度量，以至少基于所识别的一个或多个先验比特值，从可能的解码路径的集合中有效地去除解码路径，导致一个或多个剩余解码路径。可以通过从一个或多个剩余解码路径选择解码路径来解码数据比特串。

9. 发明申请

WO2009101040A3 MICROSTRUCTURE MODIFICATION IN COPPER INTERCONNECT STRUCTURE 审中-公开
公开(公告)号：WO2009101040A3
公开(公告)日：2009-08-20
申请号：PCT/EP2009/051427
申请日：2009-02-09
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , CABRAL JR, Cyril , RODBELL, Kenneth Parker , BAKER, Brett, Caroline , HUANG, Qiang
发明人： CABRAL JR, Cyril , RODBELL, Kenneth Parker , BAKER, Brett, Caroline , HUANG, Qiang
IPC分类号： H01L21/768 , H01L23/532
摘要： Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in the inventive metal interconnect structure shut down copper grain boundary diffusion. The composition of the metal interconnect structure after grain growth contains from about 1 ppm to about 10 % of cobalt in atomic concentration. Grain boundaries extend from a top surface of a copper-cobalt alloy line to a bottom surface of the copper-cobalt alloy line, and are separated from any other grain boundary by a distance greater than a width of the copper-cobalt alloy line.

10. 发明申请

WO2021184149A1 THERMAL CONDUCTIVE SILICONE COMPOSITION 审中-公开
公开(公告)号：WO2021184149A1
公开(公告)日：2021-09-23
申请号：PCT/CN2020/079448
申请日：2020-03-16
申请人： DOW SILICONES CORPORATION , XING, Chong , BHAGWAGAR, Dorab Edul , HUANG, Qiang , ZOU, Lu , YANG, Rui , ZHU, Junmin
发明人： XING, Chong , BHAGWAGAR, Dorab Edul , HUANG, Qiang , ZOU, Lu , YANG, Rui , ZHU, Junmin
IPC分类号： C08L83/07 , C08K3/22
摘要： This invention relates to a thermal conductive silicone composition comprising: (A) an organopolysiloxane having at least two silicon atom-bonded alkenyl groups with 2 to 12 carbon atoms per molecule; (B) an organopolysiloxane having at least three silicon atom-bonded hydrogen atoms per molecule; (C) an organopolysiloxane having at most two silicon atom-bonded hydrogen atoms per molecule; (D) an aluminum hydroxide powder, especially, a mixture of an aluminum hydroxide powder having an average particle size of at least 0.1 μm and less than 5 μm and an aluminum hydroxide powder having an average particle size of 5 μm to 50 μm; and (E) a hydrosilylation reaction catalyst. The composition cures to form a thermal conductive soft material with small change in hardness even if the composition is cured after a long-term storage.

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