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81. 发明申请

WO00079245A1 METHOD AND APPARATUS FOR SCANNING, STITCHING, AND DAMPING MEASUREMENTS OF A DOUBLE-SIDED METROLOGY INSPECTION TOOL 审中-公开
标题翻译：双面计量检测工具的扫描，缝合和阻尼测量的方法和装置
公开(公告)号：WO00079245A1
公开(公告)日：2000-12-28
申请号：PCT/US2000/016699
申请日：2000-06-16
IPC分类号： G01B11/30 , G01N21/95 , G01R31/265 , G01R31/28 , H01L21/66 , G01N21/00
CPC分类号： G01N21/9501 , G01R31/2656 , G01R31/2831
摘要： A system for inspecting specimens (111) such as semiconductor wafers is provided. The system provides scanning of dual-sided specimens using a damping arrangement (114) which filters unwanted acoustic and seismic vibration, including an optics arrangement (112-113), which scans a first portion of the specimen and a translation or rotation arrangement for translating or rotating the specimen to a position where the optics arrangement can scan the remaining portions of the specimen. The system further includes means for stitching the scans together, thereby providing both damping of the specimen and the need for smaller and less expensive optical elements.
摘要翻译：提供了用于检查诸如半导体晶片的样品（111）的系统。该系统使用阻挡装置（114）来提供对双面试样的扫描，所述阻尼装置（114）滤除不想要的声波和地震振动，包括扫描样本的第一部分的光学装置（112-113）和用于平移的平移或旋转装置或将样本旋转到光学装置可以扫描样品的剩余部分的位置。该系统还包括用于将扫描拼接在一起的装置，从而提供试样的阻尼和对较小和较便宜的光学元件的需要。

82. 发明申请

WO00031555A1 PROBE ASSEMBLY FOR TESTING 审中-公开
标题翻译：探测组件进行测试
公开(公告)号：WO00031555A1
公开(公告)日：2000-06-02
申请号：PCT/US1999/008208
申请日：1999-04-15
IPC分类号： G01R31/26 , G01R1/06 , G01R1/067 , G01R1/073 , G01R31/28 , H01L21/66 , G01R31/02
CPC分类号： G01R1/06716 , G01R1/07314 , G01R31/2831
摘要： An apparatus for probing a semiconductor wafer includes one or more probe tips (30), the position of each being self-adjustable (38, 40) according to the magnitude and direction of the pressure applied to it. In the present invention, elastic probe assemblies (16), which include the probe tips (30), independently move to compensate when the wafer under test expands in size due to thermal effects and/or changes in probing pressure.
摘要翻译：用于探测半导体晶片的装置包括一个或多个探针尖端（30），每个探针尖端（30）的位置根据施加到其上的压力的大小和方向而自调节（38,40）。在本发明中，包括探针尖端（30）的弹性探针组件（16）在被测晶片由于热效应和/或探测压力的变化而扩大尺寸时，独立地进行补偿。

83. 发明申请

WO00028339A1 METHOD AND APPARATUS FOR WIRELESS RADIO FREQUENCY TESTING OF RFID INTEGRATED CIRCUITS 审中-公开
标题翻译： RFID集成电路无线射频测试方法与装置
公开(公告)号：WO00028339A1
公开(公告)日：2000-05-18
申请号：PCT/US1999/025914
申请日：1999-11-03
IPC分类号： G01R31/28 , G08C17/02 , G01R31/316
CPC分类号： G01R31/2822 , G01R31/2831 , G01R31/3025 , G06K7/0095 , G08C17/02
摘要： A method and apparatus for wireless radio frequency (RF) testing of radio frequency identification integrated circuits (RFID IC) is disclosed. A fixture is provided for physically and electrically contacting the RFID IC to feed an RF interrogating signal into the RFID IC and receive an RF return signal generated in response thereto. The fixture is coupled to a tester via first and second couplers (interconnected to the fixture and tester, respectively) which establish a wireless link for transmitting and receiving the RF interrogation signal and the RF return signal thereby allowing full and accurate RF characterization of the RFID IC.
摘要翻译：公开了射频识别集成电路（RFID IC）的无线射频（RF）测试方法和装置。提供了用于物理和电接触RFID IC以将RF询问信号馈送到RFID IC中并且接收响应于此产生的RF返回信号的固定装置。固定装置通过第一和第二耦合器（分别互连到固定装置和测试器）耦合到测试器，其建立用于发射和接收RF询问信号和RF返回信号的无线链路，从而允许RFID的全面且准确的RF表征我知道了。

84. 发明申请

WO9912045A3 APPARATUS FOR MEASURING MINORITY CARRIER LIFETIMES IN SEMICONDUCTOR MATERIALS 审中-公开
标题翻译：用于测量半导体材料中少数载流子寿命的装置
公开(公告)号：WO9912045A3
公开(公告)日：1999-05-27
申请号：PCT/US9818132
申请日：1998-09-02
申请人： MIDWEST RESEARCH INST
发明人： AHRENKIEL RICHARD K
IPC分类号： G01N27/00 , G01R31/265 , G01R31/28 , H01L21/66 , G01R31/26
CPC分类号： G01R31/2656 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： An apparatus (30) for determining the minority carrier lifetime of a semiconductor sample (32) includes a positioner for moving the sample relative to a coil (44). The coil (44) is connected to a bridge circuit (42) such that the impedance of one arm of the bridge circuit (42) is varied as sample is positioned relative to the coil (44). The sample (32) is positioned relative to the coil (44) such that any change in the photoconductance of the sample (32) created by illumination of the sample (32) creates a linearly related change in the input impedance of the bridge circuit (42). In addition, the apparatus (30) is calibrated to work at a fixed frequency so that the apparatus (30) maintains a consistently high sensitivity and high linearly for samples of different sizes, shapes, and material properties. When a light source (34) illuminates the sample (32), the impedance of the bridge circuit (42) is altered as excess carriers are generated in the sample (32), thereby producing a measurable signal indicative of the minority carrier lifetimes or recombination rates of the sample (32).
摘要翻译：用于确定半导体样品（32）的少数载流子寿命的设备（30）包括用于相对于线圈（44）移动样品的定位器。线圈（44）连接到桥接电路（42），使得桥接电路（42）的一个臂的阻抗随着样本相对于线圈（44）的定位而变化。样品（32）相对于线圈（44）定位，使得由样品（32）的照射产生的样品（32）的光电导中的任何变化产生桥电路的输入阻抗的线性相关变化 42）。此外，设备（30）被校准以在固定频率下工作，使得设备（30）对于不同尺寸，形状和材料特性的样品保持一致的高灵敏度和高线性。当光源（34）照射样品（32）时，桥式电路（42）的阻抗随着样品（32）中产生过量载流子而改变，由此产生指示少数载流子寿命或重组的可测量信号样本的比率（32）。

85. 发明申请

WO99012045A2 APPARATUS FOR MEASURING MINORITY CARRIER LIFETIMES IN SEMICONDUCTOR MATERIALS 审中-公开
标题翻译：用于测量半导体材料中少数载体寿命的装置
公开(公告)号：WO99012045A2
公开(公告)日：1999-03-11
申请号：PCT/US1998/018132
申请日：1998-09-02
IPC分类号： G01N27/00 , G01R31/265 , G01R31/28 , H01L21/66 , G01R
CPC分类号： G01R31/2656 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： An apparatus (30) for determining the minority carrier lifetime of a semiconductor sample (32) includes a positioner for moving the sample relative to a coil (44). The coil (44) is connected to a bridge circuit (42) such that the impedance of one arm of the bridge circuit (42) is varied as sample is positioned relative to the coil (44). The sample (32) is positioned relative to the coil (44) such that any change in the photoconductance of the sample (32) created by illumination of the sample (32) creates a linearly related change in the input impedance of the bridge circuit (42). In addition, the apparatus (30) is calibrated to work at a fixed frequency so that the apparatus (30) maintains a consistently high sensitivity and high linearly for samples of different sizes, shapes, and material properties. When a light source (34) illuminates the sample (32), the impedance of the bridge circuit (42) is altered as excess carriers are generated in the sample (32), thereby producing a measurable signal indicative of the minority carrier lifetimes or recombination rates of the sample (32).
摘要翻译：用于确定半导体样品（32）的少数载流子寿命的装置（30）包括用于相对于线圈（44）移动样品的定位器。线圈（44）连接到桥接电路（42），使得当样品相对于线圈（44）定位时，桥接电路（42）的一个臂的阻抗是变化的。样品（32）相对于线圈（44）定位，使得通过样品（32）的照射产生的样品（32）的光电导的任何变化产生桥接电路的输入阻抗的线性相关变化（ 42）。此外，设备（30）被校准为以固定频率工作，使得设备（30）对于不同尺寸，形状和材料性质的样品保持一致的高灵敏度和高线性。当光源（34）照亮样品（32）时，桥接电路（42）的阻抗随着在样品（32）中产生过量载体而改变，从而产生指示少数载流子寿命或重组的可测量信号样品率（32）。

86. 发明申请

WO98047010A1 PROBE ASSEMBLY AND METHOD FOR SWITCHABLE MULTI-DUT TESTING OF INTEGRATED CIRCUIT WAFERS 审中-公开
标题翻译：集成电路的可切换多点测试的探头组件和方法
公开(公告)号：WO98047010A1
公开(公告)日：1998-10-22
申请号：PCT/US1998/007930
申请日：1998-04-16
IPC分类号： G01R1/073 , G01R31/28 , G01R31/02
CPC分类号： G01R31/2831 , G01R1/07357
摘要： A system used to test an integrated circuit (20) on a semiconductor wafer has a support (11) for a plurality of probe needles (14) electrically coupled to the test system wherein the probe needles achieve low contact resistance with low contact force without substantially scrubbing the contact pads (62) of the integrated circuit under test. Each probe needle is curved (14A) in such a manner so as to cause the probe needles to flex in response to compression during mechanical movement of the wafer that further causes the tip of each probe needle to rock without appreciable sliding on the surface of the contact pads of the integrated circuit. The rocking motion of the probe needles result in lateral displacement of oxide on the surface of the contact pads thereby improving electrical contact between the probe needles and the contact pads of the integrated circuit under test.
摘要翻译：用于测试半导体晶片上的集成电路（20）的系统具有用于电耦合到测试系统的多个探针（14）的支撑件（11），其中探针具有低接触力而实现低接触力而基本上不擦洗被测集成电路的接触焊盘（62）。每个探针是以这样一种方式弯曲的（14A），以便在晶片的机械运动期间响应于压缩而使探针弯曲，这进一步导致每个探针的尖端摇动，而不会在集成电路的接触焊盘。探针的摇摆运动导致接触垫表面上的氧化物的横向位移，从而改善探针与被测集成电路的接触垫之间的电接触。

87. 发明申请

WO1996018093A1 SCANNING SYSTEM FOR INSPECTING ANOMALIES ON SURFACES 审中-公开
标题翻译：用于检查表面异常的扫描系统
公开(公告)号：WO1996018093A1
公开(公告)日：1996-06-13
申请号：PCT/US1995016172
申请日：1995-12-08
申请人： TENCOR INSTRUMENTS , NIKOONAHAD, Mehrdad , STOKOWSKI, Stanley, E.
发明人： TENCOR INSTRUMENTS
IPC分类号： G01N21/00
CPC分类号： G01N21/95623 , G01N21/94 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/8825 , G01R31/2831 , G01R31/308 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A high sensitivity and high throughput surface inspection system directs a focused beam of light (38) at a grazing angle towards the surface to be inspected (40). Relative motion is caused between the beam (38) and the surface (40) so that the beam (38) scans a scan path covering substantially the entire surface and light scattered along the path is collected for detecting anomalies. The scan path comprises a plurality of arrays of straight scan path segments. The focused beam of light (38) illuminates an area of the surface between 5-15 microns in width and this system is capable of inspecting in excess of about 40 wafers per hour for 150 millimeter diameter wafers (6-inch wafers), in excess of about 20 wafers per hour for 200 millimeter diameter wafers (8-inch wafers) and in excess of about 10 wafers per hour for 300 millimeter diameter wafers (12-inch wafers).
摘要翻译：高灵敏度和高通量的表面检查系统将聚焦光束（38）以掠射角度朝向要检查的表面（40）引导。在光束（38）和表面（40）之间产生相对运动，使得光束（38）扫描覆盖基本上整个表面的扫描路径，并且收集沿着路径散射的光以检测异常。扫描路径包括多个直扫描路径段阵列。聚焦光束（38）照亮了宽度为5-15微米之间的表面区域，该系统能够超过150毫米直径的晶片（6英寸晶圆）超过约40个晶片，过量对于200毫米直径的晶片（8英寸晶圆），每小时约20个晶片，对于300毫米直径的晶片（12英寸晶圆），每小时超过约10个晶片。

88. 发明申请

WO1992008144A1 ALIGNMENT OF WAFER TEST PROBES 审中-公开
标题翻译：波形测试探针对齐
公开(公告)号：WO1992008144A1
公开(公告)日：1992-05-14
申请号：PCT/US1991001366
申请日：1991-02-27
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： INTERNATIONAL BUSINESS MACHINES CORPORATION , BULLARD, Stuart, Howard , GASCHKE, Paul, Matthew , HERRING, Dean, Frederick , HERZ, Andrew, Alfred , LAFORCE, Mark, Raymond , MENDELSON, Jay, Jeffrey , STEPHENSON, Mark, Karl
IPC分类号： G01R31/26
CPC分类号： G01R1/07314 , G01R31/2831
摘要： A method and apparatus for aligning an array of test probes with positions on a semiconductor wafer uses a positioning device having a reference pattern. The positionning device is attached to a substrate transport device. A first location of the positioning device is located under fixed optics. A second location of the positioning device is located under the probe array which corresponds to a predetermined test probe. Both of these steps are accomplished from the operational side of the test probes. The reference pattern of the positioning device and the semiconductor wafer have predetermined spatial relationships with the transport device. Necessary transport device translation for testing can then be calculated using the first and second locations of the reference pattern of the positioning device. In one embodiment the positioning device is an alignment substrate mounted in the test substrate position. Selectively conductive patterns on the alignment substrate can be used to determine the position of the predetermined test probe by measuring the continuity of shorted probe pairs as the alignment substrate is translated. In another embodiment of the invention an optics assembly mounted to the wafer chuck directly observes the fixed optics reticle and the predetermined test probe.
摘要翻译：将测试探针阵列与半导体晶片上的位置对准的方法和装置使用具有参考图案的定位装置。定位装置附接到基板输送装置。定位装置的第一位置位于固定光学器件下。定位装置的第二位置位于与预定测试探针对应的探针阵列下方。这两个步骤都是从测试探头的操作侧完成的。定位装置和半导体晶片的基准图案与输送装置具有预定的空间关系。然后可以使用定位装置的参考图案的第一和第二位置来计算用于测试的必要的运输装置平移。在一个实施例中，定位装置是安装在测试基板位置的对准基板。对准基板上的选择性导电图案可用于通过在对准基板平移时测量短路探头对的连续性来确定预定测试探针的位置。在本发明的另一个实施例中，安装到晶片卡盘的光学组件直接观察固定光学掩模版和预定的测试探针。

89. 发明申请

WO2018047590A1 結晶欠陥評価方法审中-公开
标题翻译：晶体缺陷评估方法
公开(公告)号：WO2018047590A1
公开(公告)日：2018-03-15
申请号：PCT/JP2017/029419
申请日：2017-08-16
申请人：信越半導体株式会社
发明人：斉藤　久之
IPC分类号： H01L21/66 , C30B29/06
CPC分类号： G01R31/2831 , C30B29/06
摘要：本発明は、シリコンウェーハ内に存在する結晶欠陥の分布を評価する結晶欠陥評価方法であって、評価する結晶欠陥のサイズと同じ厚さの酸化膜を前記シリコンウェーハに形成して前記シリコンウェーハのＧＯＩ特性を測定し、前記ＧＯＩ特性が低下した領域では前記酸化膜の厚さと同等のサイズの結晶欠陥が存在していたと見做して、前記ＧＯＩ特性の測定結果から前記シリコンウェーハ内の評価する結晶欠陥サイズの結晶欠陥分布を求めることを特徴とする結晶欠陥評価方法を提供する。これにより、１０ｎｍ以下の結晶欠陥サイズであっても、結晶欠陥の分布を求めることができる結晶欠陥評価方法が提供される。
摘要翻译：
本发明是用于评价存在于硅晶片，该硅晶片的晶体缺陷的分布的晶体缺陷的评价方法具有相同厚度作为晶体缺陷评价的尺寸的氧化物层通过测量硅晶片的GOI特性形成时，在GOI特性降低区域被视为相媲美的氧化膜的尺寸是本厚度的晶体缺陷，的GOI特性的测量结果硅晶片中待评估的晶体缺陷尺寸的晶体缺陷分布由硅晶片的晶体缺陷分布确定。由此，提供即使晶体缺陷尺寸为10nm或更小也能够获得晶体缺陷的分布的晶体缺陷评估方法。

90. 发明申请

WO2017171848A1 FERROMAGNETIC RESONANCE TESTING OF BURIED MAGNETIC LAYERS OF WHOLE WAFER 审中-公开
标题翻译：全晶体埋藏磁性层的铁磁共振测试
公开(公告)号：WO2017171848A1
公开(公告)日：2017-10-05
申请号：PCT/US2016/025624
申请日：2016-04-01
申请人： INTEL CORPORATION
发明人： O'BRIEN, Kevin P. , OGUZ, Kaan , WIEGAND, Christopher J , DOCZY, Mark L. , DOYLE, Brian S. , RAHMAN, MD Tofizur , GOLONZKA, Oleg , GHANI, Tahir
IPC分类号： H01L21/66 , H01L43/12 , G01R23/16 , G01R31/26
CPC分类号： G01R31/2831 , G01N24/10 , G01R31/315 , G01R33/098 , G01R33/60 , G01R35/00 , H01L22/14 , H01L43/12
摘要： Techniques are disclosed for carrying out ferromagnetic resonance (FMR) testing on whole wafers populated with one or more buried magnetic layers. The techniques can be used to verify or troubleshoot processes for forming the buried magnetic layers, without requiring the wafer to be broken. The techniques can also be used to distinguish one magnetic layer from others in the same stack, based on a unique frequency response of that layer. One example methodology includes moving a wafer proximate to a waveguide (within 500 microns, but without shorting), energizing a DC magnetic field near the target measurement point, applying an RF input signal through the waveguide, collecting resonance spectra of the frequency response of the waveguide, and decomposing the resonance spectra into magnetic properties of the target layer. One or both of the DC magnetic field and RF input signal can be swept to generate a robust set of resonance spectra.
摘要翻译：公开了用于在填充有一个或多个掩埋磁性层的整个晶片上执行铁磁共振（FMR）测试的技术。这些技术可用于验证或排除形成掩埋磁性层的过程，而不需要破碎晶片。基于该层的唯一频率响应，该技术还可用于将同一叠层中的一个磁层与其他磁层区分开来。一个示例性方法包括移动靠近波导（在500微米内，但没有短路）的晶片，激励目标测量点附近的DC磁场，通过波导施加RF输入信号，收集波导的频率响应的谐振频谱波导，并将谐振频谱分解成目标层的磁性。直流磁场和射频输入信号中的一个或两个可以被扫描以产生一组强大的共振谱。

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