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1. 发明申请

WO0206800A2 RADIO FREQUENCY COUPLING APPARATUS AND METHOD FOR MEASURING MINORITY CARRIER LIFETIMES IN SEMICONDUCTOR MATERIALS 审中-公开
标题翻译：无线电频率耦合装置和测量半导体材料中少数载体寿命的方法
公开(公告)号：WO0206800A2
公开(公告)日：2002-01-24
申请号：PCT/US0122039
申请日：2001-07-13
申请人： MIDWEST RESEARCH INST
发明人： JOHNSTON STEVEN W , AHRENKIEL RICHARD K
IPC分类号： G01N23/04 , G01N23/00
CPC分类号： G01R31/2656 , G01N23/04 , G01R31/2648
摘要： An apparatus (230) for measuring the minority carrier lifetime of a semiconductor sample (232) using radio-frequency coupling. The measuring apparatus (230) includes an antenna (244) that is positioned a coupling distance from a semiconductor sample (232) which is exposed to light (236) pulses from a laser (234) during sampling operations. A signal generator (240) is included to generate high frequency, such as 900 MHz or higher, sinusoidal waveform signals that are split into a reference signal and a sample signal. The sample signal is transmitted into a sample branch circuit where it passes through a tuning capacitor (260) and a coaxial cable (262) prior to reaching the antenna (244). The antenna (244) is radio-frequency coupled with the adjacent sample and transmits the sample signal, or electromagnetic radiation corresponding to the sample signal, to the sample and receives reflected power or a sample-coupled-photoconductivity signal back. To lower impedance and speed system response, the impedance is controlled by limiting impedance in the coaxial cable (262) and the antenna (244) reactance. In one embodiment, the antenna 244 is a waveguide/aperture hybrid antenna (244) having a central transmission line (286) and an adjacent ground flange. The sample-coupled-photoconductivity signal is then transmitted to a mixer (270) which also receives the reference signal. To enhance the sensitivity of the measuring apparatus (230), the mixer (270) is operated to phase match the reference signal and the sample-coupled-photoconductivity signal.
摘要翻译：一种用于使用射频耦合测量半导体样品（232）的少数载流子寿命的装置（230）。测量装置（230）包括天线（244），其位于与采样操作期间从激光器（234）暴露于光（236）脉冲的半导体样品（232）的耦合距离。包括信号发生器（240）以产生被分割为参考信号和采样信号的正弦波形信号的诸如900MHz或更高的高频。样本信号被传送到样本分支电路中，在样本分支电路中，它在到达天线（244）之前通过调谐电容器（260）和同轴电缆（262）。天线（244）与相邻采样射频耦合，并将采样信号或对应于采样信号的电磁辐射发送到采样，并接收反射功率或采样耦合的光电导信号。为了降低阻抗和速度系统响应，通过限制同轴电缆（262）和天线（244）电抗中的阻抗来控制阻抗。在一个实施例中，天线244是具有中心传输线（286）和相邻接地凸缘的波导/孔隙混合天线（244）。然后将采样耦合光电导信号传输到也接收参考信号的混频器（270）。为了提高测量装置（230）的灵敏度，对混频器（270）进行操作，使参考信号和采样耦合光电导率信号相互匹配。

2. 发明申请

WO9912045A3 APPARATUS FOR MEASURING MINORITY CARRIER LIFETIMES IN SEMICONDUCTOR MATERIALS 审中-公开
标题翻译：用于测量半导体材料中少数载流子寿命的装置
公开(公告)号：WO9912045A3
公开(公告)日：1999-05-27
申请号：PCT/US9818132
申请日：1998-09-02
申请人： MIDWEST RESEARCH INST
发明人： AHRENKIEL RICHARD K
IPC分类号： G01N27/00 , G01R31/265 , G01R31/28 , H01L21/66 , G01R31/26
CPC分类号： G01R31/2656 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： An apparatus (30) for determining the minority carrier lifetime of a semiconductor sample (32) includes a positioner for moving the sample relative to a coil (44). The coil (44) is connected to a bridge circuit (42) such that the impedance of one arm of the bridge circuit (42) is varied as sample is positioned relative to the coil (44). The sample (32) is positioned relative to the coil (44) such that any change in the photoconductance of the sample (32) created by illumination of the sample (32) creates a linearly related change in the input impedance of the bridge circuit (42). In addition, the apparatus (30) is calibrated to work at a fixed frequency so that the apparatus (30) maintains a consistently high sensitivity and high linearly for samples of different sizes, shapes, and material properties. When a light source (34) illuminates the sample (32), the impedance of the bridge circuit (42) is altered as excess carriers are generated in the sample (32), thereby producing a measurable signal indicative of the minority carrier lifetimes or recombination rates of the sample (32).
摘要翻译：用于确定半导体样品（32）的少数载流子寿命的设备（30）包括用于相对于线圈（44）移动样品的定位器。线圈（44）连接到桥接电路（42），使得桥接电路（42）的一个臂的阻抗随着样本相对于线圈（44）的定位而变化。样品（32）相对于线圈（44）定位，使得由样品（32）的照射产生的样品（32）的光电导中的任何变化产生桥电路的输入阻抗的线性相关变化 42）。此外，设备（30）被校准以在固定频率下工作，使得设备（30）对于不同尺寸，形状和材料特性的样品保持一致的高灵敏度和高线性。当光源（34）照射样品（32）时，桥式电路（42）的阻抗随着样品（32）中产生过量载流子而改变，由此产生指示少数载流子寿命或重组的可测量信号样本的比率（32）。

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