专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

WO2006073477A2 METHOD OF FABRICATING A TUNNELING NANOTUBE FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：制造隧道纳米效应晶体管的方法
公开(公告)号：WO2006073477A2
公开(公告)日：2006-07-13
申请号：PCT/US2005/018201
申请日：2005-05-24
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , FORSCHUNGSZENTRUM JULICH GMBH , APPENZELLER, Joerg , KNOCH, Joachim
发明人： APPENZELLER, Joerg , KNOCH, Joachim
IPC分类号： H01L29/80
CPC分类号： B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/739 , H01L29/88 , H01L51/0048 , H01L51/0052 , H01L51/0562 , Y10S977/734 , Y10S977/742 , Y10S977/749 , Y10S977/755 , Y10S977/815 , Y10S977/855 , Y10S977/938
摘要： A method of fabricating a tunneling nanotube field effect transistor includes forming in a nanotube an n-doped region and a p-doped region which are separated by an undoped channel region of the transistor. Electrical contacts are provided for the doped regions and a gate electrode that is formed upon a gate dielectric layer deposited on at least a portion of the channel region of the transistor.
摘要翻译：制造隧道状纳米管场效应晶体管的方法包括在纳米管中形成由晶体管的未掺杂沟道区分离的n掺杂区域和p掺杂区域。为掺杂区域提供电触点，以及形成在沉积在晶体管的沟道区域的至少一部分上的栅极电介质层上的栅电极。

72. 发明申请

WO2006046177A3 SEMICONDUCTOR DEVICE WITH TUNABLE ENERGY BAND GAP 审中-公开
标题翻译：具有可控能量带的半导体器件
公开(公告)号：WO2006046177A3
公开(公告)日：2006-06-22
申请号：PCT/IB2005053442
申请日：2005-10-20
申请人： KONINKL PHILIPS ELECTRONICS NV , BALKENENDE ABRAHAM R , BAKKERS ERIK P A M , FEINER LOUIS F
发明人： BALKENENDE ABRAHAM R , BAKKERS ERIK P A M , FEINER LOUIS F
IPC分类号： H01L33/00 , G11C13/02 , H01L29/12 , H01S5/06 , H01S5/34
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , G11C13/04 , G11C23/00 , G11C2213/81 , H01L27/15 , H01L29/0673 , H01L29/0676 , H01S5/0622 , H01S5/341
摘要： The present invention relates to a semiconductor device in which energy band gap can be electrically varied. An idea of the present invention is to provide a device, which is based on nanowires (306) embedded in a material (307) that exhibits a deformation when properly addressed, e.g. a piezoelectric material such as lead zirconate titanate PZT, aluminum nitride AIN or zinc oxide ZnO. The nanowires (306) can be reversibly strained by applying a local deformation to the piezoelectric material (307, 312) by means of applying a voltage to the material. The resulting band gap variation can be utilized to tune the color of the light emitted from e.g. a LED or a laser. This is a consequence of the fact that the band gap is proportional to the frequency of the emitted light. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.
摘要翻译：本发明涉及一种能够电能变化能带隙的半导体器件。本发明的思想是提供一种基于嵌入材料（307）中的纳米线（306）的装置，其在正确寻址时表现出变形，例如，诸如锆钛酸铅PZT，氮化铝AlN或氧化锌ZnO的压电材料。通过向该压电材料（307,312）施加电压而使该纳米线（306）能够可逆地应变。所得到的带隙变化可用于调节从例如发射的光发射的光的颜色。 LED或激光。这是由于带隙与发射光的频率成比例的结果。在其他应用领域中，可以控制半导体结中的接触电阻，并且该特征在存储器和开关中是非常有利的。

73. 发明申请

WO2006060599A2 SEMICONDUCTOR DEVICES BASED ON COALESCED NANO-ROD ARRAYS 审中-公开
标题翻译：基于混合纳米级阵列的半导体器件
公开(公告)号：WO2006060599A2
公开(公告)日：2006-06-08
申请号：PCT/US2005043511
申请日：2005-12-02
申请人： UNIV CALIFORNIA , MISHRA UMESH K , KELLER STACIA
发明人： MISHRA UMESH K , KELLER STACIA
IPC分类号： H01L21/336
CPC分类号： H01L33/08 , B82Y10/00 , B82Y20/00 , G02B6/1225 , H01L21/0237 , H01L21/02378 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/2003 , H01L33/007 , H01L33/20
摘要： Semiconductor devices are fabricated using semiconductor nano-rod arrays, which are merged through coalescence into a continuous planar layer after the nano-rods in the nano-rod array are fabricated by growth or etching. Merging of the nano-rods through coalescence into a continuous layer is achieved by tuning the growth conditions into a regime allowing epitaxial lateral overgrowth.
摘要翻译：使用半导体纳米棒阵列制造半导体器件，其通过生长或蚀刻制造纳米棒阵列中的纳米棒之后，通过聚结将其合并成连续的平面层。通过将生长条件调节成允许外延横向过度生长的状态，将纳米棒通过聚结合并成连续层。

74. 发明申请

WO2006046178A1 SEMICONDUCTOR DEVICE WITH TUNABLE ENERGY BAND GAP 审中-公开
标题翻译：具有可控能量带的半导体器件
公开(公告)号：WO2006046178A1
公开(公告)日：2006-05-04
申请号：PCT/IB2005/053444
申请日：2005-10-20
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , BALKENENDE, Abraham, R. , BAKKERS, Erik, P., A., M. , FEINER, Louis, F.
发明人： BALKENENDE, Abraham, R. , BAKKERS, Erik, P., A., M. , FEINER, Louis, F.
IPC分类号： H01S5/06 , H01L33/00
CPC分类号： H01L29/12 , B82Y10/00 , H01L27/15 , H01L29/0665 , H01L29/0673 , H01L29/0676
摘要： The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a semiconducting material (306) in mechanical contact with a material that exhibits a reversible volume change when properly addressed, e.g. a phase change material (307). The device can, for example, be implemented in light emitting, switching and memory in applications. The semiconducting material can be reversibly strained by applying a local volume expansion to the phase change material. The resulting band gap variation of the semiconducting material can be utilized to tune the color of the light emitted from e.g. an LED or a laser. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.
摘要翻译：本发明涉及可以可逆地改变能带隙的半导体器件。本发明的想法是提供一种器件，其基于半导体材料（306），该材料与正确地被寻址时呈现可逆体积变化的材料机械接触。相变材料（307）。该设备例如可以在应用中的发光，开关和存储器中实现。半导体材料可以通过对相变材料施加局部体积膨胀而可逆地应变。所得到的半导体材料的带隙变化可用于调节从例如发射的光发射的光的颜色。 LED或激光。在其他应用领域中，可以控制半导体结中的接触电阻，并且该特征在存储器和开关中是非常有利的。

75. 发明申请

WO2006046177A2 SEMICONDUCTOR DEVICE WITH TUNABLE ENERGY BAND GAP 审中-公开
标题翻译：具有可控能量带的半导体器件
公开(公告)号：WO2006046177A2
公开(公告)日：2006-05-04
申请号：PCT/IB2005/053442
申请日：2005-10-20
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , BALKENENDE, Abraham, R. , BAKKERS, Erik, P., A., M. , FEINER, Louis, F.
发明人： BALKENENDE, Abraham, R. , BAKKERS, Erik, P., A., M. , FEINER, Louis, F.
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , G11C13/04 , G11C23/00 , G11C2213/81 , H01L27/15 , H01L29/0673 , H01L29/0676 , H01S5/0622 , H01S5/341
摘要： The present invention relates to a semiconductor device in which energy band gap can be electrically varied. An idea of the present invention is to provide a device, which is based on nanowires (306) embedded in a material (307) that exhibits a deformation when properly addressed, e.g. a piezoelectric material such as lead zirconate titanate (PZT), aluminum nitride (AIN) or zinc oxide (ZnO). The nanowires (306) can be reversibly strained by applying a local deformation to the piezoelectric material (307) by means of applying a voltage to the material. The resulting band gap variation can be utilized to tune the color of the light emitted from e.g. a LED or a laser. This is a consequence of the fact that the band gap is proportional to the frequency of the emitted light. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.
摘要翻译：本发明涉及一种能够电能变化能带隙的半导体器件。本发明的思想是提供一种基于嵌入材料（307）中的纳米线（306）的装置，其在正确寻址时表现出变形，例如，诸如锆钛酸铅（PZT），氮化铝（AIN）或氧化锌（ZnO）的压电材料。通过向该压电材料（307）施加电压使局部变形施加到该材料上，使纳米线（306）可逆地变形。所得到的带隙变化可用于调节从例如发射的光发射的光的颜色。 LED或激光。这是由于带隙与发射光的频率成比例的结果。在其他应用领域中，可以控制半导体结中的接触电阻，并且该特征在存储器和开关中是非常有利的。

76. 发明申请

WO2006042519A1 VERFAHREN ZUR HERSTELLUNG VON SUBMIKRONSTRUKTUREN 审中-公开
标题翻译：用于生产亚微米
公开(公告)号：WO2006042519A1
公开(公告)日：2006-04-27
申请号：PCT/DE2005/001852
申请日：2005-10-17
申请人： CHRISTIAN-ALBRECHTS- UNIVERSITÄT ZU KIEL , ADELUNG, Rainer , REHDERS, Stefan
发明人： ADELUNG, Rainer , REHDERS, Stefan
IPC分类号： H01L21/033 , H01L21/027 , H01L21/335 , H01L29/76 , H01L21/336
CPC分类号： H01L21/0272 , B82Y10/00 , H01L21/02603 , H01L21/02639 , H01L21/0337 , H01L21/3086 , H01L29/0665 , H01L29/0673 , H01L29/66439 , H01L29/66742
摘要： Verfahren zur Herstellung von Submikronstrukturen unter Nutzung einer Schattenmaske, wobei ein Materialeintrag und/oder Energieeintrag durch die Öffnungen der Schattenmaske erfolgt, mit den Schritten : Aufbringen eines als Schattenmaske dienenden Films aus Maskierungsmaterial auf das Substrat, Erzeugen von Rissen in diesem Film, die bis auf das Substrat reichen, Ablösen von den Rissen eng benachbarten Randbereichen des Films unter Freilegung des Substrats und Einbringen des Materials oder der Energie durch die Rissöffnungen auf das freiliegende Substrat auch unter die abgelösten Randbereiche des Schattenmaskenfilms.
摘要翻译：施加作为在膜中的基板上的掩模材料，裂纹的产生的荫罩膜，其高达：通过使用阴影掩模，其特征在于，材料进入和/或能量输入通过荫罩的开口发生，包括以下步骤用于生产亚微米结构的过程基板范围，裂纹的剥离密切膜的相邻边缘部分，以暴露基片和通过荫罩膜的去除边缘区域下在暴露的衬底上的开放的裂纹引入材料或能量。

77. 发明申请

WO2005023700A3 NANOELECTONIC DEVICES BASED ON NANOWIRE NETWORKS 审中-公开
标题翻译：基于纳米网络的纳米电子设备
公开(公告)号：WO2005023700A3
公开(公告)日：2006-01-12
申请号：PCT/US2004028633
申请日：2004-09-01
申请人： UNIV CALIFORNIA , KANER RICHARD B , HUANG JIAXING , GRUNER GEORGE
发明人： KANER RICHARD B , HUANG JIAXING , GRUNER GEORGE
IPC分类号： B82B20060101 , H01L29/06 , H01L29/20 , H01L29/22 , H01L29/24 , H01L29/786 , H01L51/00 , H01L51/05 , H01L21/338
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/20 , H01L29/22 , H01L29/24 , H01L29/78681 , H01L29/7869 , H01L29/78696 , H01L51/0048 , H01L51/0545
摘要： Semiconductor devices (10) where networks of molecular nanowires (18) or nanofibers are used as the semiconductor material. Field effect transistors are disclosed where networks of molecular nanowires (18) are used to provide the electrical connection between the source (12) and drain (14) electrodes. The molecular nanowires have diameters of less than 500 nm and aspect ratios of at least 10. The molecular nanowires that are used to form the networks can be single element nanowires, Group III-V nanowires, Group II-VI nanowires, metal oxide nanowires, metal chalcogenide nanowires, ternary chalcogenide nanowires and conducting polymer nanowires.
摘要翻译：其中使用分子纳米线（18）或纳米纤维的网络作为半导体材料的半导体器件（10）。公开了场效应晶体管，其中使用分子纳米线（18）的网络来提供源极（12）和漏极（14）电极之间的电连接。分子纳米线具有小于500nm的直径和至少10的长宽比。用于形成网络的分子纳米线可以是单元素纳米线，III-V族纳米线，II-VI族纳米线，金属氧化物纳米线，金属硫族化物纳米线，三元硫族化物纳米线和导电聚合物纳米线。

78. 发明申请

WO2005067683A3 INORGANIC NANOWIRES 审中-公开
标题翻译：无机纳米级
公开(公告)号：WO2005067683A3
公开(公告)日：2005-12-08
申请号：PCT/US2005000075
申请日：2005-01-05
申请人： UNIV TEXAS , MASSACHUSETTS INST TECHNOLOGY , BELCHER ANGELA M , MAO CHUANBIN , SOLIS DANIEL J
发明人： BELCHER ANGELA M , MAO CHUANBIN , SOLIS DANIEL J
IPC分类号： C04B35/64 , D02G3/00 , H01L29/06 , H01L29/22 , H01L29/745 , H05B6/00
CPC分类号： H01B1/10 , B82Y10/00 , B82Y30/00 , C01B19/007 , C01G9/08 , C01P2004/04 , C01P2004/16 , C04B35/62272 , C04B2235/3284 , C04B2235/446 , H01B1/06 , H01F1/01 , H01F1/068 , H01L29/0665 , H01L29/0669 , H01L29/0673 , H01L29/22 , Y10T428/249924 , Y10T428/2913 , Y10T428/2927 , Y10T428/298
摘要： An inorganic nanowire having an organic scaffold substantially removed from the inorganic nanowire, the inorganic nanowire consisting essentially of fused inorganic nanoparticles substantially free of the organic scaffold, and methods of making same. For example, a virus-based scaffold for the synthesis of single crystal ZnS, CdS and free-standing L10 CoPt and FePt nanowires can be used, with the means of modifying substrate specificity through standard biological methods. Peptides can be selected through an evolutionary screening process that exhibit control of composition, size, and phase during nanoparticle nucleation have been expressed on the highly ordered filamentous capsid of the M13 bacteriophage. The incorporation of specific, nucleating peptides into the generic scaffold of the M13 coat structure can provide a viable template for the directed synthesis of a variety of materials including semiconducting and magnetic materials. Removal of the viral template via annealing can promote oriented aggregation-based crystal growth, forming individual crystalline nanowires. The unique ability to interchange substrate specific peptides into the linear selfassembled filamentous construct of the M 13 virus introduces a material tunability not seen in previous synthetic routes. Therefore, this system provides a genetic tool kit for growing and organizing nanowires from various materials including semiconducting and magnetic materials.
摘要翻译：具有基本上从无机纳米线除去的有机支架的无机纳米线，基本上不含有机骨架的熔融无机纳米线组成的无机纳米线及其制备方法。例如，可以使用用于合成单晶ZnS，CdS和独立的L10 CoPt和FePt纳米线的基于病毒的支架，具有通过标准生物学方法修饰底物特异性的方法。可以通过进化筛选方法选择肽，其在M13噬菌体的高度有序的丝状衣壳上表达纳米颗粒成核期间组合物，大小和相位的控制。将特定的成核肽并入M13涂层结构的通用支架中可以提供用于定向合成各种材料（包括半导体和磁性材料）的可行模板。通过退火去除病毒模板可促进取向聚集的晶体生长，形成单独的晶体纳米线。将底物特异性肽转化为M13病毒的线性自组装丝状构建体的独特能力引入了在以前的合成途径中未见的材料可调性。因此，该系统提供了一种遗传工具包，用于从包括半导体和磁性材料的各种材料生长和组织纳米线。

79. 发明申请

WO2005004203A3 SYSTEM AND METHOD BASED ON FIELD-EFFECT TRANSISTORS FOR ADDRESSING NANOMETER-SCALE DEVICES 审中-公开
标题翻译：基于用于寻址纳米尺度设备的场效应晶体管的系统和方法
公开(公告)号：WO2005004203A3
公开(公告)日：2005-09-22
申请号：PCT/US2004020450
申请日：2004-06-23
申请人： CALIFORNIA INST OF TECHN , HEATH JAMES R , LUO YI , BECKMAN ROB
发明人： HEATH JAMES R , LUO YI , BECKMAN ROB
IPC分类号： H01L20060101 , H01L21/31 , H01L21/469 , H01L21/84 , H01L27/10 , H01L27/12 , H01L27/14 , H01L29/06 , H01L29/49 , H01L29/82
CPC分类号： B82Y10/00 , G11C2213/81 , H01L21/84 , H01L27/10 , H01L27/1203 , H01L29/0665 , H01L29/0673 , H01L29/4908 , H01L29/785 , H01L2924/0002 , H01L2924/00
摘要： A system and method for selecting nanometer-scaled devices. The method includes a plurality of semiconductor wires. Two adjacent semiconductor wires of the plurality of semiconductor wires are associated with a separation smaller than or equal to 100 nm. Additionally, the system includes a plurality of address lines. Each of the plurality of address lines includes a gate region and an inactive region and intersects the plurality of semiconductor wires at a plurality of intersections. The plurality of intersections includes a first intersection and second intersection. The first intersection is associated with the gate region, and the second intersection is associated with the inactive region.
摘要翻译：用于选择纳米级设备的系统和方法。该方法包括多个半导体布线。多个半导体线中的两个相邻的半导体线与小于或等于100nm的分离相关联。另外，该系统包括多个地址线。多个地址线中的每一个都包括一个栅极区域和一个无效区域，并且在多个交点处与多个半导体布线相交。多个交点包括第一交叉点和第二交点。第一个交叉点与门区域相关联，第二个交叉路口与非活动区域相关联。

80. 发明申请

WO2005072089A2 CONTROLLED NANOWIRE IN PERMANENT INTEGRATED NANO-TEMPLATES AND METHOD OF FABRICATING SENSOR AND TRANSDUCER STRUCTURES 审中-公开
标题翻译：永久整合的纳米模板中的纳米管和制造传感器和传感器结构的方法
公开(公告)号：WO2005072089A2
公开(公告)日：2005-08-11
申请号：PCT/US2004/041467
申请日：2004-12-13
申请人： THE PENN STATE RESEARCH FOUNDATION , PENG, Chih-Yi , KALKAN, Ali, Kaan , CUIFFI, Joseph, D. , SHAN, Yinghui , FONASH, Stephen , HAYES, Daniel , BUTTERFOSS, Paul , NAM, Wook, Jun
发明人： PENG, Chih-Yi , KALKAN, Ali, Kaan , CUIFFI, Joseph, D. , SHAN, Yinghui , FONASH, Stephen , HAYES, Daniel , BUTTERFOSS, Paul , NAM, Wook, Jun
IPC分类号： B81C1/00 , H01L21/20 , H01L21/44 , H01L29/06 , H01L51/00
CPC分类号： B81C1/0019 , B81B2203/0109 , B81B2203/0118 , B82Y10/00 , H01L21/0237 , H01L21/02532 , H01L21/0259 , H01L21/02603 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L51/0002 , Y02E10/549 , Y10S977/762
摘要： This invention presents a novel method to form uniform or heterogeneous, straight or curved and size-controllable nanostructures, nanowires, and nanotapes, including SiNW, in a nanochannel template. In the case of semiconductor nanowires, doping can be included during growth. Electrode contacts are present as needed and built in to the template structure. Thus completed devices such as diodes, transistors, solar cells, sensors, and transducers are fabricated, contacted, and arrayed as nanowire or nanotape fabrication is completed. Optionally, the template is not removed may become part of the structure. Nanostructures such as nanotweezers, nanocantiliver, and nanobridges are formed utilizing the processes of the invention.
摘要翻译：本发明提出了一种在纳米通道模板中形成均匀或不均匀的直线或弯曲和尺寸可控的纳米结构，纳米线和纳米线（包括SiNW）的新方法。在半导体纳米线的情况下，可以在生长期间包括掺杂。根据需要存在电极触点，并内置于模板结构中。如纳米线或纳米管制造完成时，制造，接触和排列诸如二极管，晶体管，太阳能电池，传感器和换能器的完成器件。可选地，模板不被移除可能成为结构的一部分。使用本发明的方法形成纳米结构，如纳米滴定剂，纳坦溶剂和纳米桥。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式