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71. 发明申请

WO2010044953A1 POLISHING PAD EDGE EXTENSION 审中-公开
标题翻译：抛光垫边缘延伸
公开(公告)号：WO2010044953A1
公开(公告)日：2010-04-22
申请号：PCT/US2009/054527
申请日：2009-08-20
申请人： APPLIED MATERIALS, INC. , CHEN, Hung Chih , CHANG, Shou-Sung , TSAI, Stan, D.
发明人： CHEN, Hung Chih , CHANG, Shou-Sung , TSAI, Stan, D.
IPC分类号： H01L21/304
CPC分类号： B24B37/20 , B24B37/34
摘要： A method and apparatus for conditioning a polishing pad is provided. The apparatus includes a polishing pad coupled to an upper surface of a platen, the polishing pad having a polishing surface, a support member coupled to a base of the platen adjacent a peripheral edge of the polishing pad, and a bearing material coupled to an upper surface of the support member, the bearing material having an upper surface that is coplanar with the polishing surface of the polishing pad. The method includes urging a conditioning disk against a polishing surface of a polishing pad, moving the conditioning disk across the polishing surface in a sweep pattern that includes at least a portion of the conditioning disk extending over a peripheral edge of the polishing surface, and maintaining a substantially uniform pressure to the polishing surface from the conditioning disk across the sweep pattern.
摘要翻译：提供了一种用于调理抛光垫的方法和装置。该装置包括耦合到压板的上表面的抛光垫，抛光垫具有抛光表面，耦合到压板的与抛光垫的周缘相邻的基座的支撑构件，以及联接到上部的轴承材料支撑构件的表面，轴承材料具有与抛光垫的抛光表面共面的上表面。所述方法包括将调节盘推向抛光垫的抛光表面，以调整图案的方式移动调节盘，该扫掠图案包括在抛光表面的周缘延伸的至少一部分调理盘，并且保持在整个扫描图案上从调节盘向抛光表面施加基本均匀的压力。

72. 发明申请

WO2008058200A3 METHOD AND APPARATUS FOR ELECTROCHEMICAL MECHANICAL POLISHING NIP SUBSTRATES 审中-公开
标题翻译：用于电化学机械抛光NIP基片的方法和设备
公开(公告)号：WO2008058200A3
公开(公告)日：2008-10-09
申请号：PCT/US2007083956
申请日：2007-11-07
申请人： ST LAWRENCE NANOTECHNOLOGY INC , LI YUZHUO
发明人： LI YUZHUO
IPC分类号： B24B1/00
CPC分类号： B24B37/20 , B24B37/046 , G11B5/8404
摘要： The present invention relates to an apparatus and a method of electrochemical mechanical polishing (ECMP) for microelectronics applications. The apparatus and method of electrochemical mechanical polishing can be used planarize NiP substrate for a magnetic storage medium and for a process which allows polishing with a controlled surface finish, and a set of corresponding polishing electrolytes and slurry.
摘要翻译：本发明涉及一种用于微电子应用的电化学机械抛光（ECMP）装置和方法。电化学机械抛光的设备和方法可以用于平面化用于磁存储介质的NiP基底和用于允许用受控表面抛光进行抛光的工艺以及一组相应的抛光电解质和浆料。

73. 发明申请

WO2007123168A1 研磨パッドの製造方法审中-公开
标题翻译：生产抛光垫的方法
公开(公告)号：WO2007123168A1
公开(公告)日：2007-11-01
申请号：PCT/JP2007/058494
申请日：2007-04-19
申请人：東洋ゴム工業株式会社 , 福田武司 , 渡邊二夫 , 廣瀬純司 , 中村賢治 , 堂浦真人
发明人：福田武司 , 渡邊二夫 , 廣瀬純司 , 中村賢治 , 堂浦真人
IPC分类号： B29C39/18 , B24B37/00 , B29C39/16 , H01L21/304 , B29K75/00 , B29K105/04 , B29L9/00
CPC分类号： B29C43/28 , B24B21/04 , B24B37/20 , B24D18/00 , B29C43/30 , B29K2075/00
摘要：　製造工程が少なく、生産性に優れる長尺研磨パッドの製造方法を提供することを目的とする。また、製造工程が少なく、生産性に優れ、研磨層とクッション層との間で剥離することがない長尺積層研磨パッドの製造方法を提供することを目的とする。本発明の長尺研磨パッドの製造方法は、機械発泡法により気泡分散ウレタン組成物を調製する工程、面材を送り出しつつその上に気泡分散ウレタン組成物を連続的に吐出する工程、該気泡分散ウレタン組成物上に別の面材を積層する工程、厚さを均一に調整しつつ気泡分散ウレタン組成物を硬化させることによりポリウレタン発泡体からなる研磨層を形成する工程、該研磨層を面に対して平行に２つに切断することにより、研磨層と面材からなる長尺研磨層を２枚同時に作製する工程、及び長尺研磨層を裁断する工程を含む。
摘要翻译：一种制造连续抛光垫的方法，其减少了生产步骤的数量并具有优异的生产率。还提供了一种制造连续分层抛光垫的方法，其减少了生产步骤的数量，具有优异的生产率，并且防止垫遭受抛光层/缓冲层分离。生产连续抛光垫的方法包括：通过机械发泡制备其中分散有气泡的聚氨酯组合物的步骤; 表面材料被输送并且具有分散的气泡的聚氨酯组合物连续喷射到材料上的步骤; 将另一面材重叠在具有分散气泡的氨基甲酸酯组合物上的步骤; 将具有分散气泡的氨基甲酸酯组合物固化同时调节厚度以均匀从而形成由聚氨酯泡沫制成的抛光层的步骤; 其中抛光层在与该平面平行的方向上被切割成两个切片，从而同时产生两个包括抛光层和面材的连续抛光层的步骤; 以及切割所得连续抛光层的步骤。

74. 发明申请

WO2006049269A1 POLISHING APPARATUS 审中-公开
标题翻译：抛光装置
公开(公告)号：WO2006049269A1
公开(公告)日：2006-05-11
申请号：PCT/JP2005/020334
申请日：2005-10-31
申请人： EBARA CORPORATION , NABEYA, Osamu , TOGAWA, Tetsuji , FUKUSHIMA, Makoto , YASUDA, Hozumi
发明人： NABEYA, Osamu , TOGAWA, Tetsuji , FUKUSHIMA, Makoto , YASUDA, Hozumi
IPC分类号： H01L21/304 , B24B37/04
CPC分类号： B24B37/20 , B24B37/005 , B24B37/10 , B24B37/105 , B24B37/30 , B24B37/32 , B24B47/22 , B24B49/00 , B24B49/16
摘要： A polishing apparatus (1) has a polishing pad (22), a top ring (20) for holding a semiconductor wafer (W), a vertical movement mechanism (24) operable to move the top ring (20) in a vertical direction, a distance measuring sensor (46) operable to detect a position of the top ring (20) when a lower surface of the top ring (20) is brought into contact with the polishing pad (22), and a controller (47) operable to calculate an optimal position of the top ring (20) to polish the semiconductor wafer (W) based on the position detected by the distance measuring sensor (46). The vertical movement mechanism (24) includes a ball screw mechanism (30, 32, 38, 42) operable to move the top ring (20) to the optimal position.
摘要翻译：抛光装置（1）具有抛光垫（22），用于保持半导体晶片（W）的顶环（20），可垂直移动顶环（20）的垂直移动机构（24）距离测量传感器（46），当所述顶环（20）的下表面与所述抛光垫（22）接触时，可操作以检测所述顶环（20）的位置;以及控制器（47），其可操作以基于由距离测量传感器（46）检测到的位置，计算顶环（20）的最佳位置以对半导体晶片（W）进行抛光。垂直运动机构（24）包括可操作以将顶环（20）移动到最佳位置的滚珠丝杆机构（30,32,38,42）。

75. 发明申请

WO2004044273A1 ELECTROPOLISHING SYSTEM AND PROCESS 审中-公开
标题翻译：电镀系统和工艺
公开(公告)号：WO2004044273A1
公开(公告)日：2004-05-27
申请号：PCT/GB2003/004809
申请日：2003-11-06
申请人： NUTOOL, INC , TALIEH, Homayoun , BASOL,Bulent, M.
发明人： TALIEH, Homayoun , BASOL,Bulent, M.
IPC分类号： C25F3/30
CPC分类号： B24B37/20 , B23H5/08 , C25D5/02 , C25D5/06 , C25D5/22 , C25D7/123 , C25F3/02 , C25F7/00 , H01L21/2885 , H01L21/32115 , H01L21/32125 , H01L21/67075 , H01L21/6715
摘要： The present invention provides a process for electropolishing a conductive surface of a semiconductor wafer. During the process, a contact electrode in a contact solution contacts a contact region on surface of the conductive layer with the contact solution. Further, during the process a process electrode in a process solution contacts a process region on the conductive surface with the process solution while applying an electrical potential between the contact electrode and the process electrode to electropolish the surface of the conductive layer of the process region.
摘要翻译：本发明提供一种用于电解抛光半导体晶片的导电表面的方法。在该过程中，接触溶液中的接触电极与导电层表面上的接触区域接触接触溶液。此外，在该过程中，处理溶液中的处理电极与处理溶液接触导电表面上的工艺区域，同时在接触电极和处理电极之间施加电位，以电镀抛光工艺区域的导电层的表面。

76. 发明申请

WO2003009362A1 研磨体、ＣＭＰ研磨装置及び半導体デバイスの製造方法审中-公开
标题翻译：抛光元件，CMP抛光装置和生产方法半导体器件
公开(公告)号：WO2003009362A1
公开(公告)日：2003-01-30
申请号：PCT/JP2002/006780
申请日：2002-07-04
申请人：株式会社ニコン , 星野進 , 宇田豊 , 菅谷功
发明人：星野進 , 宇田豊 , 菅谷功
IPC分类号： H01L21/304
CPC分类号： B24B37/20 , B24D13/20 , H01L21/31053 , H01L21/32115 , H01L21/3212
摘要： A wafer (11), an object of polishing, is held by a polishing head (12) and rotates together with the polishing head (12). A polishing element (14) is attached to a polishing member (13) by bonding or the like using an adhesive or a double−side adhesive tape. The polishing element (14) is formed, as shown in (b), by laminating a soft member (15), a hard elastic member (16) and a polishing pad (17). The hard elastic member (16) is so formed that a deformation under a polishing load applied during polishing is smaller than a step difference allowed for the wafer at an interval equivalent to the maximum pattern of the semiconductor integrated circuit, and larger than TTV allowed for the wafer at an interval equivalent to one chip. Accordingly, both “wafer global removal uniformity” and “local pattern flatness” can be satisfied.
摘要翻译：抛光对象的晶片（11）被研磨头（12）保持，并与抛光头（12）一起旋转。抛光元件（14）通过使用粘合剂或双面粘合带的粘合等附着到抛光部件（13）上。如（b）所示，通过层叠软性构件（15），硬质弹性构件（16）和研磨垫（17）而形成研磨元件（14）。硬质弹性构件16被形成为使得在抛光期间施加的研磨负载下的变形小于与半导体集成电路的最大图案等间隔的间隔允许的晶片的阶梯差，并且大于允许的TTV 晶片间隔相当于一个芯片。因此，可以满足“晶片全局去除均匀性”和“局部图案平坦度”。

77. 发明申请

WO2002064314A1 METHOD AND APPARATUS FOR ELECTROCHEMICAL PLANARIZATION OF A WORKPIECE 审中-公开
标题翻译：工业电化学平面化方法与装置
公开(公告)号：WO2002064314A1
公开(公告)日：2002-08-22
申请号：PCT/US2002/004141
申请日：2002-02-12
申请人： SPEEDFAM-IPEC CORPORATION
发明人： EMESH, Ismail , CHADDA, Saket , KOROVIN, Nikolay, N. , MUELLER, Brian, L.
IPC分类号： B24B37/04
CPC分类号： B24B37/20 , B23H5/08 , B24B37/12 , C25F3/02 , C25F7/00 , H01L21/32125 , H01L21/7684
摘要： An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad (40) and a platen (50). The platen (50) is formed of conductive material, is disposed proximate to the polishing pad (40) and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor (70) is positioned within the platen (50). The electrical conductor (70) has a first end connected to a power source (90). A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing pad (40). The power source (90) applies a positive charge to the workpiece via the electrical conductor (70) so that an electric potential difference between the metallized surface of the workpiece and the platen (50) is created to remove at least a portion of the metallized surface from the workpiece.
摘要翻译：用于平坦化工件上的金属化表面的电化学平面化装置包括抛光垫（40）和压板（50）。压板（50）由导电材料形成，靠近抛光垫（40）设置，并且被构造成在平坦化处理的至少一部分期间具有负电荷。至少一个电导体（70）位于压板（50）内。电导体（70）具有连接到电源（90）的第一端。工件载体构造成承载工件并将工件压靠在抛光垫（40）上。电源（90）经由电导体（70）向工件施加正电荷，使得在工件的金属化表面和压板（50）之间产生电位差，以去除金属化的至少一部分工件表面。

78. 发明申请

WO02017411A1 POLISHING APPARATUS COMPRISING PAD AND POLISHING METHOD USING THE SAME 审中-公开
标题翻译：包括垫片的抛光装置和使用其的抛光方法
公开(公告)号：WO02017411A1
公开(公告)日：2002-02-28
申请号：PCT/KR2000/001030
申请日：2000-09-09
IPC分类号： H01L21/302 , B24B37/04 , B24B49/14 , H01L21/306 , H01L21/3105 , H01L21/321 , H01L213/02
CPC分类号： H01L21/3212 , B24B37/042 , B24B37/20 , B24B37/24 , B24B37/26 , B24B49/14
摘要： A chemical polishing apparatus which self-supplies a polishing chemical from a polishing pad, and a polishing method using the chemical polishing apparatus are provided. This chemical polishing apparatus, which is used to polish a material film formed on a wafer in the manufacture of semiconductor devices, includes a wafer head, to the bottom surface of which a wafer is sucked, the wafer head capable of uniformly maintaining the temperature of the wafer and a pressure applied to the rear surface of the wafer throughout polishing, a cooling pad which faces the wafer head and self-supplies a polishing chemical during polishing, a cooling vessel which surrounds the bottom and lateral sides of the cooling pad, a cooling unit which is attached to the bottom surface of the cooling pad and used to form and maintain the cooling pad, and a chamber which accommodates the above-described members, and is maintained in a wafer-free state.
摘要翻译：提供了一种从研磨垫自行供给抛光剂的化学抛光装置和使用该化学抛光装置的抛光方法。用于研磨在半导体器件的制造中形成在晶片上的材料膜的该化学抛光装置包括：晶片头，其底面被吸收晶片，该晶片头能够均匀地保持晶片的温度晶片和在整个抛光过程中施加到晶片的后表面的压力，在抛光期间面向晶片头并自动供应抛光化学品的冷却垫，围绕冷却垫的底部和侧面的冷却容器，冷却单元，其附接到冷却垫的底表面并用于形成和保持冷却垫;以及容纳上述构件的室，并且保持在无晶片状态。

79. 发明申请

WO02016075A2 SUBAPERTURE CHEMICAL MECHANICAL POLISHING SYSTEM 审中-公开
标题翻译：子系统化学机械抛光系统
公开(公告)号：WO02016075A2
公开(公告)日：2002-02-28
申请号：PCT/US2001/022846
申请日：2001-07-19
IPC分类号： B24B37/20 , B24B53/007 , B24B53/017 , H01L21/304 , H01L21/306 , B24B
CPC分类号： B24B37/20 , B24B53/017 , H01L21/30625
摘要： A chemical mechanical polishing (CMP) system is provided. A carrier has a top surface and a bottom region. The top surface of the carrier is designed to hold and rotate a wafer having a one or more formed layers to be prepared. A preparation head is also included and is designed to be applied to at least a portion of the wafer that is less than an entire portion of the surface of the wafer. Preferably, the preparation head and the carrier are configured to rotate in opposite directions. In addition, the preparation head is further configured to oscillate while linearly moving from one of the direction of a center of the wafer to an edge of the wafer and from the edge of the wafer to the center of the wafer so as to facilitate precision controlled removal of material from the formed layers of the wafer.
摘要翻译：提供化学机械抛光（CMP）系统。载体具有顶表面和底部区域。载体的顶表面被设计成保持和旋转具有一个或多个待制备的成形层的晶片。还包括制备头，并且被设计成被施加到小于晶片表面的整个部分的晶片的至少一部分。优选地，制备头和载体被构造成沿相反方向旋转。此外，准备头还被配置为在从晶片的中心的方向之一到晶片的边缘并且从晶片的边缘到晶片的中心线性移动的同时振荡，以便于精确控制从晶片的成形层去除材料。

80. 发明申请

WO01034346A1 CHEMICAL MECHANICAL POLISHING APPARATUS COMPONENTS WITH ENHANCED CORROSION RESISTANCE 审中-公开
标题翻译：具有增强耐腐蚀性的化学机械抛光装置组件
公开(公告)号：WO01034346A1
公开(公告)日：2001-05-17
申请号：PCT/US2000/029419
申请日：2000-10-25
IPC分类号： B24B37/14 , B24B37/20 , B24B41/047 , B24D9/08 , B24B37/04
CPC分类号： B24B37/20 , B24B37/14 , B24B41/047 , B24D9/08
摘要： Components of chemical, mechanical, polishing apparatus with components resistant to chemical attack by chemical slurries used in the polishing of semiconductor wafers. Among the components that are improved to enhance resistance to chemical attack are the polishing platen (380), pad conditioning end effectors, various subassemblies, housings for instrumentation, carrier rinse station surfaces, and other components that come into contact with a slurry(380), and may be applied by a wide range of techniques. Especially useful are coatings (300) such as tungsten carbide, tungsten nitride, amorphous diamond like carbon, and other such inert wear resistant coatings, having the general formula M1C-M2-M3, where: M1C is selected from W, Ta, Zr, Ti and Nb; M2 is selected from Ni, Cr, Mn; M3 is selected from Co, Fe.
摘要翻译：化学，机械，抛光设备的组件，其具有耐化学腐蚀的化学物质的部件，用于半导体晶片的抛光。改进以提高耐化学腐蚀性的组分是研磨台板（380），垫调节末端效应器，各种组件，用于仪器的载体冲洗台表面和与浆料（380）接触的其它部件，，并且可以通过广泛的技术来应用。特别有用的是具有通式M1C-M2-M3的碳化钨，氮化钨，无定形金刚石碳等涂层（300）和其它这样的惰性耐磨涂层，其中：M1C选自W，Ta，Zr， Ti和Nb; M2选自Ni，Cr，Mn; M3选自Co，Fe。

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