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1. 发明申请

WO2005105356A2 ELECTROCHEMICAL MECHANICAL PLANARIZATION PROCESS AND APPARATUS 审中-公开
标题翻译：电化学机械平面化方法及装置
公开(公告)号：WO2005105356A2
公开(公告)日：2005-11-10
申请号：PCT/US2005/014040
申请日：2005-04-22
申请人： ASM NUTOOL, INC. , BASOL, Bulent, M. , TALIEH, Homayoun
发明人： BASOL, Bulent, M. , TALIEH, Homayoun
IPC分类号： B23H3/00
CPC分类号： C25F7/00 , B23H5/08 , B24B21/04 , B24B21/22 , B24B37/04 , B24B37/205 , B24B47/04 , C25D5/02 , C25D5/06 , C25D5/22 , C25D7/123 , H01L21/2885 , H01L21/3212 , H01L21/76877
摘要： A system for electrochemical mechanical polishing of a conductive surface of a wafer is provided. The system includes a wafer holder to hold the wafer and a belt pad disposed proximate to the wafer to polish the conductive surface. Application of a potential difference between the belt pad and the conductive surface result in material removal from the conductive surface. Electrical contact to the surface is provided through either contacts embedded in the belt pad or contacts placed adjacent the belt pad.
摘要翻译：提供了一种用于晶片的导电表面的电化学机械抛光的系统。该系统包括用于保持晶片的晶片保持器和靠近晶片设置的用于抛光导电表面的带垫。皮带垫和导电表面之间的电位差的施加导致从导电表面去除材料。通过嵌入在皮带垫中的触点或邻近皮带垫的触点提供与表面的电接触。

2. 发明申请

WO0215245A2 PLATING METHOD AND APPARATUS THAT CREATES A DIFFERENTIAL BETWEEN ADDITIVE DISPOSED ON A TOP SURFACE AND A CAVITY SURFACE OF A WORKPIECE USING AN EXTERNAL INFLUENCE 审中-公开
标题翻译：使用外部影响在工件的上表面和外表面上形成的添加剂之间产生差异的涂覆方法和装置
公开(公告)号：WO0215245A2
公开(公告)日：2002-02-21
申请号：PCT/US0124890
申请日：2001-08-09
申请人： NUTOOL INC , BASOL BULENT
发明人： BASOL BULENT
IPC分类号： C25D5/02 , C25D5/08 , C25D5/18 , C25D5/22 , C25D5/34 , C25D7/12 , H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/12
CPC分类号： C25D5/22 , C25D5/34 , H01L21/2885 , H01L21/7684 , H01L21/76877 , H01L21/76879
摘要： The present invention relates to methods and apparatus for plating a conductive material on a substrate surface in a highly desirable manner. The invention removes at least one additive adsorbed on the top portion of the workpiece more than at least one additive disposed on a cavity portion, thereby allowing plating of the conductive material take place before the additive fully re-adsorbs onto the top portion and causing greater plating of the cavity portion relative to the top portion.
摘要翻译：本发明涉及用于以非常希望的方式在基板表面上镀覆导电材料的方法和设备。本发明去除了至少一种吸附在工件顶部上的添加剂，而不是至少一种设置在空腔部分上的添加剂，从而允许在添加剂完全重新吸附到顶部上之前进行导电材料的镀覆，空腔部分相对于顶部的电镀。

3. 发明申请

WO0026443A3 METHOD AND APPARATUS FOR ELECTROCHEMICAL MECHANICAL DEPOSITION 审中-公开
标题翻译：电化学机械沉积的方法与装置
公开(公告)号：WO0026443A3
公开(公告)日：2000-10-12
申请号：PCT/US9925656
申请日：1999-11-02
申请人： NUTOOL INC
发明人： TALIEH HOMAYOUN
IPC分类号： C25D7/12 , B23H5/08 , B24B37/26 , C25D5/02 , C25D5/06 , C25D5/08 , C25D5/22 , C25D17/06 , C25D21/12 , H01L21/288 , H01L21/304 , H01L21/321
CPC分类号： B24B37/26 , B23H5/08 , C25D5/02 , C25D5/06 , C25D5/22 , H01L21/2885 , H01L21/3212
摘要： The present invention deposits a conductive material from an electrolyte solution to a predetermined area of a wafer. The steps that are used when making this application include applying the conductive material to the predetermined area of the wafer using an electrolyte solution disposed on a surface of the wafer, when the wafer is disposed between a cathode and an anode, and preventing accumulation of the conductive material to areas other than the predetermined area by mechanically polishing the other areas while the conductive material is being applied.
摘要翻译：本发明将导电材料从电解质溶液沉积到晶片的预定区域。在进行该应用时使用的步骤包括：当晶片设置在阴极和阳极之间时，使用设置在晶片表面上的电解质溶液将导电材料施加到晶片的预定区域，并且防止导电材料通过在施加导电材料的同时机械抛光其它区域而到达预定区域以外的区域。

4. 发明申请

WO2006121716A1 FILLING DEEP AND WIDE OPENINGS WITH DEFECT-FREE CONDUCTOR 审中-公开
标题翻译：用无缺陷导体填充深度和宽度的开口
公开(公告)号：WO2006121716A1
公开(公告)日：2006-11-16
申请号：PCT/US2006/016879
申请日：2006-05-02
申请人： ASM NUTOOL, INC. , BASOL, Bulent, M.
发明人： BASOL, Bulent, M.
IPC分类号： H01L21/768
CPC分类号： H01L21/2885 , H01L21/76877 , H01L21/76898
摘要： Relatively large openings or features (102) in integrated circuit metallization or packaging vias are filled by two plating or electrodeposition processes in sequence. The first electrodeposition process conformally lines the large, high aspect ratio features (102) with a first layer (104) to define an inner cavity (116). The second electrodeposition process for depositing a second layer (118) uses a different solution to bottom-up fill the inner cavity (116) left by the first electrodeposition process. Conformality is typically induced by use of levelers during the first electrodeposition process, while accelerators and suppressors may be used to promote bottom-up fill during the second electrodeposition process, although either process may employ any of the three additives.
摘要翻译：集成电路金属化或封装通孔中的相对较大的开口或特征（102）依次由两个电镀或电沉积工艺填充。第一电沉积工艺使大的高纵横比特征（102）与第一层（104）保持一致，以限定内腔（116）。用于沉积第二层（118）的第二电沉积方法使用不同的解决方案来自底向上填充由第一电沉积工艺留下的内腔（116）。通常在第一电沉积过程中通过使用矫直机诱导一致性，而在第二次电沉积过程中可使用促进剂和抑制剂来促进自底向上填充，尽管任一方法都可以使用三种添加剂中的任何一种。

5. 发明申请

WO2004044273A1 ELECTROPOLISHING SYSTEM AND PROCESS 审中-公开
标题翻译：电镀系统和工艺
公开(公告)号：WO2004044273A1
公开(公告)日：2004-05-27
申请号：PCT/GB2003/004809
申请日：2003-11-06
申请人： NUTOOL, INC , TALIEH, Homayoun , BASOL,Bulent, M.
发明人： TALIEH, Homayoun , BASOL,Bulent, M.
IPC分类号： C25F3/30
CPC分类号： B24B37/20 , B23H5/08 , C25D5/02 , C25D5/06 , C25D5/22 , C25D7/123 , C25F3/02 , C25F7/00 , H01L21/2885 , H01L21/32115 , H01L21/32125 , H01L21/67075 , H01L21/6715
摘要： The present invention provides a process for electropolishing a conductive surface of a semiconductor wafer. During the process, a contact electrode in a contact solution contacts a contact region on surface of the conductive layer with the contact solution. Further, during the process a process electrode in a process solution contacts a process region on the conductive surface with the process solution while applying an electrical potential between the contact electrode and the process electrode to electropolish the surface of the conductive layer of the process region.
摘要翻译：本发明提供一种用于电解抛光半导体晶片的导电表面的方法。在该过程中，接触溶液中的接触电极与导电层表面上的接触区域接触接触溶液。此外，在该过程中，处理溶液中的处理电极与处理溶液接触导电表面上的工艺区域，同时在接触电极和处理电极之间施加电位，以电镀抛光工艺区域的导电层的表面。

6. 发明申请

WO2003050867A3 PLANARITY DETECTION METHODS AND APPARATUS FOR ELECTROCHEMICAL MECHANICAL PROCESSING SYSTEMS 审中-公开
公开(公告)号：WO2003050867A3
公开(公告)日：2003-06-19
申请号：PCT/US2002/039102
申请日：2002-12-05
申请人： NUTOOL, INC.
发明人： BASOL, Bulent , UZOH, Cyprian, E.
IPC分类号： H01L21/66
摘要： The methods and systems described provide for an in-situ detection of planarity of a layer that is deposited on or etched off the surface of a substrate. Planarity can be detected using various detection mechanisms, including optical, electrical, mechanical and acoustical, in combination with the electrochemical mechanical processing methods, including electrochemical mechanical deposition and electrochemical mechanical etching. Once planarity is detected, a planarity signal can be used to terminate or alter a process that has been previously initiated, or begin a new process. In a preferred embodiment, an optical detection system is used to detect planarity during the formation of planar conductive layers obtained by electrochemical mechanical processing.

7. 发明申请

WO2003050867A2 PLANARITY DETECTION METHODS AND APPARATUS FOR ELECTROCHEMICAL MECHANICAL PROCESSING SYSTEMS 审中-公开
标题翻译：电化学机械加工系统的平面检测方法和装置
公开(公告)号：WO2003050867A2
公开(公告)日：2003-06-19
申请号：PCT/US2002/039102
申请日：2002-12-05
申请人： NUTOOL, INC.
发明人： BASOL, Bulent , UZOH, Cyprian, E.
IPC分类号： H01L21/66
CPC分类号： H01L21/67253
摘要： The methods and systems described provide for an in-situ detection of planarity of a layer that is deposited on or etched off the surface of a substrate. Planarity can be detected using various detection mechanisms, including optical, electrical, mechanical and acoustical, in combination with the electrochemical mechanical processing methods, including electrochemical mechanical deposition and electrochemical mechanical etching. Once planarity is detected, a planarity signal can be used to terminate or alter a process that has been previously initiated, or begin a new process. In a preferred embodiment, an optical detection system is used to detect planarity during the formation of planar conductive layers obtained by electrochemical mechanical processing.
摘要翻译：所描述的方法和系统提供了沉积在衬底表面上或从衬底的表面上蚀刻的层的平面度的原位检测。可以使用包括光学，电学，机械和声学在内的各种检测机制结合电化学机械加工方法（包括电化学机械沉积和电化学机械蚀刻）来检测平面度。一旦检测到平面度，就可以使用平面信号来终止或改变先前已经启动或开始新过程的过程。在优选实施例中，光学检测系统用于在通过电化学机械处理获得的平面导电层的形成期间检测平面度。

8. 发明申请

WO2003028048A3 LOW-FORCE ELECTROCHEMICAL MECHANICAL PROCESSING METHOD AND APPARATUS 审中-公开
公开(公告)号：WO2003028048A3
公开(公告)日：2003-04-03
申请号：PCT/US2002/030952
申请日：2002-09-27
申请人： NUTOOL, INC.
发明人： BASOL, Bulent, M. , UZOH, Cyprian, E. , BOGART, Jeffrey, A.
IPC分类号： C25D5/22
摘要： The present invention relates to semiconductor integrated circuit technology and discloses an electrochemical mechanical processing system for uniformly distributing an applied force to a workpiece surface. The system includes a workpiece carrier for positioning or holding the workpiece surface and a workpiece-surface-influencing-device (WSID). The WSID is used to uniformly distribute the applied force to the workpiece surface and includes various layers that are used to process and apply a uniform and global force to the workpiece surface.

9. 发明申请

WO02078903A3 METHOD AND APPARATUS FOR AVOIDING PARTICLE ACCUMULATION DURING AN ELECTROCHEMICAL PROCESS 审中-公开
标题翻译：在电化学过程中避免颗粒物累积的方法和装置
公开(公告)号：WO02078903A3
公开(公告)日：2003-03-20
申请号：PCT/US0209794
申请日：2002-03-26
申请人： NUTOOL INC
发明人： BASOL BULENT M , UZOH CYPRIAN , TALIEH HOMAYOUN
IPC分类号： B08B1/04 , B24B37/04 , B24B53/00 , B24B53/007 , C25D5/22 , C25D7/12 , C25F3/16 , H01L21/288 , H01L21/304 , H01L21/768 , C25B9/00 , C25D5/06 , H01L21/00
CPC分类号： B24B53/017 , B24B37/04 , B24B53/001 , C25D5/22 , C25D17/001 , H01L21/2885 , H01L21/7684 , H01L21/76877
摘要： Systems and methods to remove or lessen the size of metal particles that have formed on, and to limit the rate at which metal particles form or grow on, workpiece surface influencing devices used during electrodeposition are presented. According to an exemplary method, the workpiece surface influencing device (400) is occasionally placed in contact with a conditioning substrate coated with an inert material, and the bias applied to the electrodeposition system is reversed. According to another exemplary method, the workpiece surface influencing device (400) is conditioned using mechanical contact members, such as brushes (250), and conditioning of the workpiece surface influencing device (400) occurs, for example, through physical brushing of the workpiece surface influencing device (400) with the brushes (250). According to a further exemplary method, the workpiece surface influencing device (400) is rotated in different direction during electrodeposition.
摘要翻译：提出了用于去除或减小在电沉积期间使用的工件表面影响装置上形成金属颗粒的尺寸并限制金属颗粒形成或生长的速率的系统和方法。根据一个示例性方法，工件表面影响装置（400）偶尔地与涂覆有惰性材料的调理基板接触，并且施加到电沉积系统的偏压相反。根据另一示例性方法，使用诸如电刷（250）的机械接触构件对工件表面影响装置（400）进行调节，并且例如通过物理刷涂工件来发生工件表面影响装置（400）的调理表面影响装置（400）与刷子（250）。根据另一示例性方法，在电沉积期间，工件表面影响装置（400）沿不同方向旋转。

10. 发明申请

WO2002077327A2 MASK PLATE DESIGN 审中-公开
标题翻译：面板设计
公开(公告)号：WO2002077327A2
公开(公告)日：2002-10-03
申请号：PCT/US2002/006231
申请日：2002-02-27
申请人： NUTOOL, INC.
发明人： BASOL, Bulent, M. , UZOH, Cyprian , BOGART, Jeff, A.
IPC分类号： C25D5/02
CPC分类号： H01L21/76879 , B24B37/042 , C25D5/02 , C25D5/08 , C25D5/22 , C25D7/12 , C25D17/001 , C25F7/00 , H01L21/2885
摘要： The present invention includes a mask plate design that includes at least one or a plurality of channels portions on a surface of the mask plate, into which electrolyte solution will accumulate when the mask plate surface is disposed on a surface of wafer, and out of which the electrolyte solution will freely flow. There are also at least one or a plurality of polish portions on the mask plate surface that allow for polishing of the wafer when the mask plate surface is disposed on a surface of wafer.
摘要翻译：本发明包括掩模板设计，其包括在掩模板的表面上的至少一个或多个通道部分，当掩模板表面设置在晶片表面上时，电解质溶液将积聚到其中，并且其中电解液会自由流动。掩模板表面上还有至少一个或多个抛光部分，当掩模板表面设置在晶片的表面上时，允许抛光晶片。

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