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    • 74. 发明申请
    • POISSON-BASED COMMUNICATION SYSTEMS AND METHODS
    • 基于POISSON的通信系统和方法
    • WO2013134236A1
    • 2013-09-12
    • PCT/US2013/029070
    • 2013-03-05
    • NORTHROP GRUMMAN SYSTEMS CORPORATION
    • SAUNDERS, Oliver W.KADOTA, Russell K.
    • H04B10/70
    • H04B10/70
    • One embodiment is a Poisson-based communication system. The system includes a receiver that comprises a photodetector that receives photons and generates pulses based on the received photons, a sampling event counter that counts the number of generated pulses by the photodetector and a demodulator. The demodulator samples the sampling event counter at predetermined time intervals to determine an occurrence of a first state when light pulse energy has been transmitted by a transmitter and received by the photodetector and an occurrence of a second state when light pulse energy has not been transmitted by the transmitter and received by the photodetector.
    • 一个实施例是基于泊松的通信系统。 该系统包括接收器,该接收器包括接收光子并基于接收到的光子产生脉冲的光电检测器,对由光电检测器和解调器产生的脉冲数进行计数的采样事件计数器。 解调器以预定的时间间隔对采样事件计数器进行采样,以确定当光脉冲能量已被发射机发送并由光电检测器接收时出现第一状态,并且当光脉冲能量未被发送时由第二状态发生 发射机并由光电检测器接收。
    • 77. 发明申请
    • SEMICONDUCTOR DEVICES WITH MINIMIZED CURRENT FLOW DIFFERENCES AND METHODS OF SAME
    • 具有最小化电流流动差异的半导体器件及其方法
    • WO2012092193A2
    • 2012-07-05
    • PCT/US2011/067172
    • 2011-12-23
    • NORTHROP GRUMMAN SYSTEMS CORPORATIONVELIADIS, John, Victor D.
    • VELIADIS, John, Victor D.
    • H01L21/336H01L29/78
    • H01L29/8083H01L29/1602H01L29/1608H01L29/2003H01L29/66909
    • A semiconductor device with minimized current flow differences and method of fabricating same are disclosed. The method includes forming a semiconductor stack including a plurality of layers that include a first layer having a first conductivity type and a second layer having a first conductivity type, in which the second layer is on top of the first layer, forming a plurality of mesas in the semiconductor layer stack, and forming a plurality of gates in the semiconductor layer stack having a second conductivity type and situated partially at a periphery of the mesas, in which the plurality of gates are formed to minimize current flow differences between a current flowing from the first layer to the plurality of mesas at a first applied gate bias and a current flowing from the first layer to the plurality of mesas at a second applied gate bias when voltage is applied to the semiconductor device.
    • 公开了一种具有最小电流流动差的半导体器件及其制造方法。 该方法包括形成包括多个层的半导体堆叠,所述多个层包括具有第一导电类型的第一层和具有第一导电类型的第二层,其中第二层位于第一层的顶部,形成多个台面 在所述半导体层堆叠中,并且在所述半导体层堆叠中形成具有第二导电类型并且部分位于所述台面的周边的多个栅极,其中形成所述多个栅极以使流过 当施加电压到半导体器件时,在第一施加的栅极偏压下的第一层到多个台面并且以第二施加的栅极偏压从第一层流向多个台的电流。