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    • 36. 发明申请
    • PLASMON ENHANCED LIGHT-EMITTING DIODES
    • PLASMON增强发光二极管
    • WO2009096919A1
    • 2009-08-06
    • PCT/US2008/001319
    • 2008-01-30
    • HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.FATTAL, David A.TAN, Michael Renne Ty
    • FATTAL, David A.TAN, Michael Renne Ty
    • H01L33/00
    • H01L33/06H01L33/30H01L33/46H01S5/1042H01S5/1046H01S2301/145
    • Embodiments of the present invention are directed to light-emitting diodes. In one embodiment of the present invention, a light-emitting diode comprises at least one quantum well sandwiched between a first intrinsic semiconductor layer and a second semiconductor layer. An n-type heterostructure is disposed on a surface of the first intrinsic semiconductor layer, and a p-type heterostructure is disposed on a surface of the second intrinsic semiconductor layer opposite the n-type semiconductor heterostructure. The diode also includes a metal structure disposed on a surface of the light-emitting diode. Surface plasmon polaritons formed along the interface between the metal-structure and the light-emitting diode surface extend into the at least one quantum well increasing the spontaneous emission rate of the transverse magnetic field component of electromagnetic radiation emitted from the at least one quantum well. In certain embodiments, the electromagnetic radiation can be modulated at a rate of about 10 Gb/s or faster.
    • 本发明的实施例涉及发光二极管。 在本发明的一个实施例中,发光二极管包括夹在第一本征半导体层和第二半导体层之间的至少一个量子阱。 n型异质结构设置在第一本征半导体层的表面上,p型异质结构设置在与n型半导体异质结构相对的第二本征半导体层的表面上。 二极管还包括设置在发光二极管的表面上的金属结构。 沿着金属结构和发光二极管表面之间的界面形成的表面等离子体激元极化延伸到至少一个量子阱中,从而增加从至少一个量子阱发射的电磁辐射的横向磁场分量的自发发射速率。 在某些实施例中,可以以大约10Gb / s或更快的速率调制电磁辐射。