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21. 发明申请

WO2008150649A1 SWINGING MAGNETS TO IMPROVE TARGET UTILIZATION 审中-公开
标题翻译：改变磁铁，以提高目标的利用率
公开(公告)号：WO2008150649A1
公开(公告)日：2008-12-11
申请号：PCT/US2008/063466
申请日：2008-05-12
申请人： APPLIED MATERIALS, INC. , LE, Hien-minh Huu , STIMSON, Bradley O. , WHITE, John M.
发明人： LE, Hien-minh Huu , STIMSON, Bradley O. , WHITE, John M.
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C23C14/35 , H01J37/3408 , H01J37/3455
摘要： A method and apparatus for uniformly eroding a sputtering target is disclosed. As a racetrack shaped magnetic field formed by a magnetron moves across the sputtering surface of the sputtering target, one or more magnets within the magnetron may swing or pivot relative to other magnets within the magnetron to reduce magnetic field pinching at the turns in the racetrack shaped magnetic field. The swinging or pivoting magnets alter the location on the magnetic field at a turn in the racetrack shape where the coordinate of the magnetic field perpendicular to the sputtering surface equals zero. By altering the location, sputtering target erosion uniformity may be increased.
摘要翻译：公开了一种用于均匀侵蚀溅射靶的方法和装置。当由磁控管形成的赛道形状的磁场移动穿过溅射靶的溅射表面时，磁控管内的一个或多个磁体可以相对于磁控管内的其它磁体摆动或枢转，以减少在跑道形状的转弯处的磁场夹紧磁场。摆动或旋转的磁体在跑道转弯处改变磁场上的位置，其中垂直于溅射表面的磁场的坐标等于零。通过改变位置，可以增加溅射靶侵蚀均匀性。

22. 发明申请

WO2008106634A2 FLOATING SLIT VALVE FOR TRANSFER CHAMBER INTERFACE 审中-公开
标题翻译：用于移动式机房接口的浮动式滑阀
公开(公告)号：WO2008106634A2
公开(公告)日：2008-09-04
申请号：PCT/US2008/055448
申请日：2008-02-29
申请人： APPLIED MATERIALS, INC. , WHITE, John M. , KURITA, Shinichi , MATSUMOTO, Takayuki
发明人： WHITE, John M. , KURITA, Shinichi , MATSUMOTO, Takayuki
IPC分类号： F16K51/00 , B21D51/16 , F16K25/00
CPC分类号： F16K51/02 , Y10S438/905 , Y10T29/49412
摘要： The present invention generally comprises a floating slit valve for interfacing with a chamber. A floating slit valve moves or "floats" relative to another object such as a chamber. The slit valve may be coupled between two chambers. When a chamber coupled with the slit valve is heated, the slit valve may also be heated by conduction. As the slit valve is heated, it may thermally expand. When a vacuum is drawn in a chamber, the slit valve may deform due to vacuum deflection. By disposing a low friction material spacer between the chamber and the slit valve, the slit valve may not rub against the chamber during thermal expansion/contraction and/or vacuum deflection and thus, may not generate undesirable particle contaminants. Additionally, slots drilled through the chamber for coupling the slit valve to the chamber may be sized to accommodate thermal expansion/contraction and vacuum deflection of the slit valve.
摘要翻译：本发明一般包括用于与腔室接口的浮动狭缝阀。浮动狭缝阀移动或“漂浮” 相对于另一个物体如室。狭缝阀可以连接在两个腔室之间。当与狭缝阀连接的腔室被加热时，狭缝阀也可以通过传导加热。当狭缝阀受热时，可能会发生热膨胀。当在腔室内抽真空时，狭缝阀可能由于真空偏转而变形。通过在腔室和狭缝阀之间设置低摩擦材料间隔件，狭缝阀在热膨胀/收缩和/或真空偏转期间不会与腔室摩擦，因此不会产生不希望有的颗粒污染物。另外，通过腔室钻出的用于将狭缝阀连接到腔室的狭槽的尺寸可以适应狭缝阀的热膨胀/收缩和真空偏转。

23. 发明申请

WO2008014136A2 OCTAGON TRANSFER CHAMBER 审中-公开
标题翻译： OCTAGON转运室
公开(公告)号：WO2008014136A2
公开(公告)日：2008-01-31
申请号：PCT/US2007/073521
申请日：2007-07-13
申请人： APPLIED MATERIALS, INC. , WHITE, John M. , TAKEHARA, Takako
发明人： WHITE, John M. , TAKEHARA, Takako
IPC分类号： H01L21/677
CPC分类号： H01L21/67196 , H01L21/67742
摘要： A method and apparatus for processing substrates in a cluster tool is disclosed. The transfer chambers of the cluster tool have eight locations to which additional chambers (i.e., load lock, buffer, and processing chambers) may attach. The transfer chamber may be formed of three separate portions. The central portion may be a rectangular shaped portion. The two other portions may be trapezoidal shaped portions. The trapezoidal shaped portions each have three slots through which the substrate can move for processing. The central portion of the transfer chamber may have a removable lid that allows a technician to easily access the transfer chamber.
摘要翻译：公开了一种用于在群集工具中处理衬底的方法和设备。群集工具的传送室具有八个位置，附加室（即装载锁定，缓冲和处理室）可以附接到该八个位置。传送室可以由三个分开的部分形成。中央部分可以是矩形部分。另外两个部分可以是梯形形状的部分。梯形部分每个都具有三个槽，衬底可以通过该槽移动以进行处理。传送室的中央部分可以有一个可移动的盖子，使技术人员可以方便地进入传送室。

24. 发明申请

WO2010065474A2 MODULATION OF RF RETURNING STRAPS FOR UNIFORMITY CONTROL 审中-公开
标题翻译： RF恢复条的调制用于均匀控制
公开(公告)号：WO2010065474A2
公开(公告)日：2010-06-10
申请号：PCT/US2009/066147
申请日：2009-11-30
申请人： APPLIED MATERIALS, INC. , TSO, Alan , HOFFMAN, Daniel J. , TANAKA, Tsutomu (Tom) , TAYLOR, William Nixon, Jr. , WANG, Rongping , WHITE, John M.
发明人： TSO, Alan , HOFFMAN, Daniel J. , TANAKA, Tsutomu (Tom) , TAYLOR, William Nixon, Jr. , WANG, Rongping , WHITE, John M.
IPC分类号： H01L21/205 , H05H1/36
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32183
摘要： Embodiments of the present invention generally relates to a method and apparatus for processing substrates using plasma. More particularly, embodiments of the present invention provide a plasma processing chamber having an electrode coupled to a plurality of RF returning straps, wherein impedance of the RF returning straps are set and/or adjusted to tune the plasma distribution during processing. In one embodiment, impedance of RF returning straps varies by changing length of the RF returning straps, by changing width of the RF returning straps, by changing spacing of the RF returning straps, by changing location of the RF returning straps, by adding a capacitor to the RF returning straps, or by combinations thereof.
摘要翻译：本发明的实施例一般涉及一种使用等离子体处理衬底的方法和装置。更具体地，本发明的实施例提供了一种具有耦合到多个RF返回带的电极的等离子体处理室，其中设置和/或调整RF返回带的阻抗以调整处理期间的等离子体分布。在一个实施例中，通过改变RF返回带的宽度，通过改变RF返回带的间隔，通过改变RF返回带的位置，通过增加一个电容器到RF返回带或其组合。

25. 发明申请

WO2009055388A1 NIP-NIP THIN-FILM PHOTOVOLTAIC STRUCTURE 审中-公开
标题翻译： NIP-NIP薄膜光伏结构
公开(公告)号：WO2009055388A1
公开(公告)日：2009-04-30
申请号：PCT/US2008/080641
申请日：2008-10-21
申请人： APPLIED MATERIALS, INC. , WHITE, John M. , CHOI, Soo Young
发明人： WHITE, John M. , CHOI, Soo Young
IPC分类号： H01L31/042
CPC分类号： H01L31/076 , H01L31/0475 , H01L31/18 , H01L31/1824 , H01L31/1884 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A thin film multi-junction photovoltaic structure is presented as well as methods and apparatus for forming the same. The photovoltaic structure comprises first and second NIP junctions formed over a translucent substrate.
摘要翻译：介绍了薄膜多结光伏结构及其形成方法和装置。光伏结构包括在半透明基板上形成的第一和第二NIP结。

26. 发明申请

WO2019001682A1 MOVABLE MASKING ELEMENT 审中-公开
公开(公告)号：WO2019001682A1
公开(公告)日：2019-01-03
申请号：PCT/EP2017/065710
申请日：2017-06-26
申请人： APPLIED MATERIALS, INC. , LINDENBERG, Ralph , GRILLMAYER, Jürgen , CAN, Linh , WHITE, John M. , HANIKA, Markus
发明人： LINDENBERG, Ralph , GRILLMAYER, Jürgen , CAN, Linh , WHITE, John M. , HANIKA, Markus
IPC分类号： C23C14/04 , C23C14/54 , C23C16/04
摘要： A deposition apparatus is provided. The deposition apparatus includes a first deposition source and a second deposition source configured for depositing material in a substrate receiving area. The deposition apparatus includes a masking element. The masking element is configured for masking a substrate edge region extending in a first direction. The masking element is configured to be moved in at least the first direction to compensate for an accumulation of deposition material on the masking element.

27. 发明申请

WO2018171909A1 APPARATUS AND METHOD FOR HOLDING A SUBSTRATE, APPARATUS AND METHOD FOR LOADING A SUBSTRATE INTO A VACUUM PROCESSING MODULE, AND SYSTEM FOR VACUUM PROCESSING OF A SUBSTRATE 审中-公开
公开(公告)号：WO2018171909A1
公开(公告)日：2018-09-27
申请号：PCT/EP2017/059669
申请日：2017-04-24
申请人： APPLIED MATERIALS, INC. , LINDENBERG, Ralph , VINCENT, Joseph , WHITE, John M.
发明人： LINDENBERG, Ralph , VINCENT, Joseph , WHITE, John M.
IPC分类号： H01L21/683
CPC分类号： H01L21/6838
摘要： An apparatus (100) for holding a substrate (10) is described. The apparatus (100) includes a Bernoulli-type holder (110) having a surface (112) configured to face the substrate (10), and one or more adjusting means (188) configured to adjust the temperature of the substrate (10).

28. 发明申请

WO2018171908A1 APPARATUS FOR LOADING A SUBSTRATE IN A VACUUM PROCESSING SYSTEM, SYSTEM FOR PROCESSING A SUBSTRATE, AND METHOD FOR LOADING A SUBSTRATE 审中-公开
公开(公告)号：WO2018171908A1
公开(公告)日：2018-09-27
申请号：PCT/EP2017/059668
申请日：2017-04-24
申请人： APPLIED MATERIALS, INC. , WHITE, John M. , VINCENT, Joseph , LINDENBERG, Ralph
发明人： WHITE, John M. , VINCENT, Joseph , LINDENBERG, Ralph
IPC分类号： H01L21/677 , H01L21/683
CPC分类号： H01L21/6838 , H01L21/67718
摘要： An apparatus (140) for loading a substrate in a vacuum processing system (100) is described. The apparatus (140) includes a first holder (142) for holding a substrate (10), and a second holder (144) for holding a substrate (10) vertically stacked with the first holder (142).

29. 发明申请

WO2008106542A1 APPARATUS AND METHOD FOR DEPOSITION OVER LARGE AREA SUBSTRATES 审中-公开
标题翻译：用于在大面积基板上沉积的装置和方法
公开(公告)号：WO2008106542A1
公开(公告)日：2008-09-04
申请号：PCT/US2008/055174
申请日：2008-02-27
申请人： APPLIED MATERIALS, INC. , WHITE, John M. , YADAV, Sanjay , WANG, Qunhua , CHOI, Soo Young , WANG, Weijie
发明人： WHITE, John M. , YADAV, Sanjay , WANG, Qunhua , CHOI, Soo Young , WANG, Weijie
IPC分类号： H05H1/00 , C23C16/44
CPC分类号： C23C16/4485 , C23C16/509 , H01J37/321 , H01J37/32449
摘要： The present invention generally relates to an inductively coupled plasma apparatus. When depositing utilizing a plasma generated from a showerhead, the plasma may not be evenly distributed to the edge of the substrate. By inductively coupling plasma to the chamber in an area corresponding to the chamber walls, the plasma distribution within the chamber may be evenly distributed and deposition upon the substrate may be substantially even. By vaporizing the processing gas prior to entry into the processing chamber, the plasma may also be even and thus contribute to an even deposition on the substrate.
摘要翻译：本发明一般涉及电感耦合等离子体装置。当利用从喷头产生的等离子体进行沉积时，等离子体可能不会均匀分布到基板的边缘。通过在对应于室壁的区域中将等离子体感应耦合到室，室内的等离子体分布可以均匀分布，并且在衬底上的沉积可以基本上均匀。通过在进入处理室之前蒸发处理气体，等离子体也可以是均匀的并且因此有助于在衬底上的均匀沉积。

30. 发明申请

WO2007149945A3 METHODS AND APPARATUS FOR DEPOSITING A MICROCRYSTALLINE SILICON FILM FOR PHOTOVOLTAIC DEVICE 审中-公开
公开(公告)号：WO2007149945A3
公开(公告)日：2007-12-27
申请号：PCT/US2007/071703
申请日：2007-06-20
申请人： APPLIED MATERIALS, INC. , CHOI, Soo Young , TAKEHARA, Takako , WHITE, John M. , CHAE, Yong Kee
发明人： CHOI, Soo Young , TAKEHARA, Takako , WHITE, John M. , CHAE, Yong Kee
IPC分类号： H01L31/00
摘要： Methods for depositing a microcrystalline silicon film layer with improved deposition rate and film quality are provided in the present invention. Also, a photovoltaic (PV) cell having a microcrystalline silicon film is provided. In one embodiment, the method produces a microcrystalline silicon film on a substrate at a deposition rate greater than about 20 nm per minute, wherein the microcrystalline silicon film has a crystallized volume between about 20 percent to about 80 percent.

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