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1. 发明申请

WO2007149945A3 METHODS AND APPARATUS FOR DEPOSITING A MICROCRYSTALLINE SILICON FILM FOR PHOTOVOLTAIC DEVICE 审中-公开
公开(公告)号：WO2007149945A3
公开(公告)日：2007-12-27
申请号：PCT/US2007/071703
申请日：2007-06-20
申请人： APPLIED MATERIALS, INC. , CHOI, Soo Young , TAKEHARA, Takako , WHITE, John M. , CHAE, Yong Kee
发明人： CHOI, Soo Young , TAKEHARA, Takako , WHITE, John M. , CHAE, Yong Kee
IPC分类号： H01L31/00
摘要： Methods for depositing a microcrystalline silicon film layer with improved deposition rate and film quality are provided in the present invention. Also, a photovoltaic (PV) cell having a microcrystalline silicon film is provided. In one embodiment, the method produces a microcrystalline silicon film on a substrate at a deposition rate greater than about 20 nm per minute, wherein the microcrystalline silicon film has a crystallized volume between about 20 percent to about 80 percent.

2. 发明申请

WO2009029902A1 PHOTOVOLTAIC PRODUCTION LINE 审中-公开
标题翻译：光伏生产线
公开(公告)号：WO2009029902A1
公开(公告)日：2009-03-05
申请号：PCT/US2008/074931
申请日：2008-08-29
申请人： APPLIED MATERIALS, INC. , BACHRACH, Robert Z. , CHAE, Yong-Kee , CHOI, Soo Young , DE VRIES, Nicholas G. J. , ELGAR, Yacov , ENGLHARDT, Eric A. , FREI, Michel R. , GAY, Charles , HAWKINS, Parris , HO, Choi , HUNTER, James Craig , KANKANALA, Penchala N. , LI, Liwei , LO, Wing Hoo , LU, Danny Cam Toan , MEI, Fang , MURPHY, Stephen P. , PATEL, Srujal , SAUNDERS, Matthew J. B. , SCHLEZINGER, Asaf , SHENG, Shuran , SU, Tzay-Fa , SULLIVAN, Jeffrey S. , TANNER, David , TROWBRIDGE, Teresa , WALKER, Brice , WHITE, John M. , WON, Tae K.
发明人： BACHRACH, Robert Z. , CHAE, Yong-Kee , CHOI, Soo Young , DE VRIES, Nicholas G. J. , ELGAR, Yacov , ENGLHARDT, Eric A. , FREI, Michel R. , GAY, Charles , HAWKINS, Parris , HO, Choi , HUNTER, James Craig , KANKANALA, Penchala N. , LI, Liwei , LO, Wing Hoo , LU, Danny Cam Toan , MEI, Fang , MURPHY, Stephen P. , PATEL, Srujal , SAUNDERS, Matthew J. B. , SCHLEZINGER, Asaf , SHENG, Shuran , SU, Tzay-Fa , SULLIVAN, Jeffrey S. , TANNER, David , TROWBRIDGE, Teresa , WALKER, Brice , WHITE, John M. , WON, Tae K.
IPC分类号： G06F7/10 , H01L31/06 , H01L21/4763
CPC分类号： H01L21/67236 , B23K26/364 , B26F3/002 , B26F3/004 , B65G49/064 , B65G2249/02 , B65G2249/04 , C03B33/03 , C03B33/033 , H01L21/67132 , H01L21/67712 , H01L21/67715 , H01L21/67721 , H01L21/67727 , H01L21/6776 , H01L31/022425 , H01L31/03921 , H01L31/0504 , H01L31/075 , H02S50/00 , H02S50/10 , Y02E10/548 , Y02P40/57 , Y10T29/49002 , Y10T29/49355 , Y10T29/5196 , Y10T29/53113 , Y10T29/5313 , Y10T29/5317 , Y10T29/53187 , Y10T29/53365 , Y10T29/53417 , Y10T225/10 , Y10T225/325 , Y10T225/329
摘要： The present invention relates to a system that can be used to form a photovoltaic device using processing modules that are adapted to perform steps in the solar cell formation process The automated solar cell fab is generally an arrangement of automated processing modules and automation equipment that is used to form solar cell devices. The automated solar fab will thus generally comprise a substrate receiving module that is adapted to receive a substrate, one or more absorbing layer deposition cluster tools having at least one processing chamber that is adapted to deposit a silicon-containing layer on a surface of the substrate, one or more back contact deposition chambers, one or more material removal chambers, a solar cell encapsulation device, an autoclave module, an automated junction box attaching module, and one or more quality assurance modules that are adapted to test and qualify the completely formed solar cell device.
摘要翻译：本发明涉及一种可用于使用处理模块来形成光伏器件的系统，所述处理模块适于在太阳能电池形成过程中执行步骤。自动化太阳能电池制造厂通常是自动化处理模块和用于形成太阳能电池器件的自动化设备。因此，自动化太阳能加工厂通常将包括适于接纳衬底的衬底接收模块，具有至少一个处理室的一个或多个吸收层沉积群集工具，该处理室适于在衬底的表面上沉积含硅层，一个或多个背接触沉积室，一个或多个材料去除室，太阳能电池封装装置，高压灭菌器模块，自动化接线盒附接模块，以及一个或多个质量保证模块，其适于测试和限定完全形成太阳能电池装置。

3. 发明申请

WO2008014136A2 OCTAGON TRANSFER CHAMBER 审中-公开
标题翻译： OCTAGON转运室
公开(公告)号：WO2008014136A2
公开(公告)日：2008-01-31
申请号：PCT/US2007/073521
申请日：2007-07-13
申请人： APPLIED MATERIALS, INC. , WHITE, John M. , TAKEHARA, Takako
发明人： WHITE, John M. , TAKEHARA, Takako
IPC分类号： H01L21/677
CPC分类号： H01L21/67196 , H01L21/67742
摘要： A method and apparatus for processing substrates in a cluster tool is disclosed. The transfer chambers of the cluster tool have eight locations to which additional chambers (i.e., load lock, buffer, and processing chambers) may attach. The transfer chamber may be formed of three separate portions. The central portion may be a rectangular shaped portion. The two other portions may be trapezoidal shaped portions. The trapezoidal shaped portions each have three slots through which the substrate can move for processing. The central portion of the transfer chamber may have a removable lid that allows a technician to easily access the transfer chamber.
摘要翻译：公开了一种用于在群集工具中处理衬底的方法和设备。群集工具的传送室具有八个位置，附加室（即装载锁定，缓冲和处理室）可以附接到该八个位置。传送室可以由三个分开的部分形成。中央部分可以是矩形部分。另外两个部分可以是梯形形状的部分。梯形部分每个都具有三个槽，衬底可以通过该槽移动以进行处理。传送室的中央部分可以有一个可移动的盖子，使技术人员可以方便地进入传送室。

4. 发明申请

WO2010091205A2 GROUND RETURN FOR PLASMA PROCESSES 审中-公开
标题翻译：等离子体处理的接地返回
公开(公告)号：WO2010091205A2
公开(公告)日：2010-08-12
申请号：PCT/US2010/023236
申请日：2010-02-04
申请人： APPLIED MATERIALS, INC. , CHOI, Soo Young , TINER, Robin L. , KURITA, Shinichi , WHITE, John M. , SORENSEN, Carl A. , KHO, Jeffrey A. , ANWAR, Suhail , FURUTA, Gaku , INAGAWA, Makoto
发明人： CHOI, Soo Young , TINER, Robin L. , KURITA, Shinichi , WHITE, John M. , SORENSEN, Carl A. , KHO, Jeffrey A. , ANWAR, Suhail , FURUTA, Gaku , INAGAWA, Makoto
IPC分类号： H05H1/34 , H01L21/205
CPC分类号： C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译：描述了用于为两个电极之间的电流提供电对称接地或返回路径的方法和设备。该装置包括至少一个射频（RF）装置，该射频（RF）装置耦合到电极中的一个并且位于处理室的侧壁和/或底部之间。该方法包括使用一个电极相对于另一个电极移动，并且使用耦合到侧壁和电极的RF装置，耦合到腔室底部的RF装置以及耦合到侧壁和电极的RF装置中的一个或两个，基于位移电极的位置实现接地返回路径，电极或其组合。

5. 发明申请

WO2008154446A2 AN APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM AND METHODS FOR MANUFACTURING THE SAME 审中-公开
标题翻译：用于沉积均匀硅膜的装置及其制造方法
公开(公告)号：WO2008154446A2
公开(公告)日：2008-12-18
申请号：PCT/US2008/066210
申请日：2008-06-06
申请人： APPLIED MATERIALS, INC. , CHOI, Soo Young , WON, Tae Kyung , PARK, Beom Soo , WHITE, John M.
发明人： CHOI, Soo Young , WON, Tae Kyung , PARK, Beom Soo , WHITE, John M.
IPC分类号： B05D5/12 , C23C16/00
CPC分类号： C23C16/45565 , H01L31/182 , H01L31/1824 , Y02E10/545 , Y02E10/546 , Y02P70/521
摘要： Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.
摘要翻译：提供了在衬底支撑组件和用于沉积太阳能电池应用的硅膜的气体分配板之间产生梯度间隔的方法和装置。在一个实施例中，一种用于沉积太阳能电池薄膜的设备可以包括处理室，设置在处理室中并被配置为在其上支撑四边形衬底的衬底支撑件，以及布置在衬底支撑件上方的处理室中的气体分配板其中，所述气体分配板的底面具有包括边缘和角部的周边，并且其中所述气体分配板的角部比所述气体分配板的边缘更靠近所述基板支撑。

6. 发明申请

WO2013169559A1 SIOX PROCESS CHEMISTRY DEVELOPMENT USING MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：使用微波等离子体化学气相沉积的SIOX工艺化学发展
公开(公告)号：WO2013169559A1
公开(公告)日：2013-11-14
申请号：PCT/US2013/039341
申请日：2013-05-02
申请人： APPLIED MATERIALS, INC. , WON, Tae Kyung , CHO, Seon-Mee , CHOI, Soo Young , PARK, Beom Soo , YIM, Dong-Kil , WHITE, John M. , KUDELA, Jozef
发明人： WON, Tae Kyung , CHO, Seon-Mee , CHOI, Soo Young , PARK, Beom Soo , YIM, Dong-Kil , WHITE, John M. , KUDELA, Jozef
IPC分类号： H01L21/205 , H01L21/316
CPC分类号： H01L21/0262 , C23C16/401 , C23C16/45578 , C23C16/511 , C23C16/545 , H01L21/02164 , H01L21/02211 , H01L21/02274
摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400°C, flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.
摘要翻译：本文描述了用于处理衬底的方法。方法可以包括将基底定位在处理室中，将处理室保持在低于400℃的温度，将包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室，向微波功率施加微波功率从反应气体产生微波等离子体，并在衬底的暴露表面的至少一部分上沉积氧化硅层。

7. 发明申请

WO2013151786A1 FLIP EDGE SHADOW FRAME 审中-公开
标题翻译：卷边边框
公开(公告)号：WO2013151786A1
公开(公告)日：2013-10-10
申请号：PCT/US2013/032990
申请日：2013-03-19
申请人： APPLIED MATERIALS, INC. , WANG, Qunhua , CHOI, Soo Young , TINER, Robin L. , WHITE, John M. , FURUTA, Gaku , PARK, Beom Soo
发明人： WANG, Qunhua , CHOI, Soo Young , TINER, Robin L. , WHITE, John M. , FURUTA, Gaku , PARK, Beom Soo
IPC分类号： H01L21/205
CPC分类号： C23C14/042 , C23C16/042
摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.
摘要翻译：本文描述了用于处理衬底的装置。用于控制基板上的沉积的装置可以包括：腔室，其包括阴影框架支撑件，包括基板支撑表面的基板支撑件，具有包括第一支撑表面的阴影框架主体的阴影框架，与第一表面相对的第二支撑表面，以及与阴影框体连接的可拆卸唇缘。可拆卸唇缘可以包括支撑连接，面向基底的第一唇缘表面，与第一唇缘表面相对的第二唇缘表面，位于第一支撑表面上方的第一边缘以及与第一边缘相对的第二边缘以接触基底。

8. 发明申请

WO2010132716A2 ANODIZED SHOWERHEAD 审中-公开
标题翻译：阳光淋浴
公开(公告)号：WO2010132716A2
公开(公告)日：2010-11-18
申请号：PCT/US2010/034806
申请日：2010-05-13
申请人： APPLIED MATERIALS, INC. , CHOI, Soo Young , ANWAR, Suhail , FURUTA, Gaku , PARK, Beom Soo , TINER, Robin L. , WHITE, John M. , KURITA, Shinichi
发明人： CHOI, Soo Young , ANWAR, Suhail , FURUTA, Gaku , PARK, Beom Soo , TINER, Robin L. , WHITE, John M. , KURITA, Shinichi
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/5096 , H01J37/32091 , H01J37/32449 , H01J37/32541 , H01J37/32559 , H01J37/32577
摘要： Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of het showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.
摘要翻译：本文公开的实施方案通常涉及具有阳极氧化气体分配喷头的装置。在大面积的平行板RF处理室中，掌握RF返回路径可能具有挑战性。射频是RF处理室遇到的一个常见问题。为了减少RF处理室中的电弧，带可以耦合到基座以缩短RF返回路径，陶瓷或绝缘或阳极氧化的阴影框架可以在处理期间耦合到基座，并且阳极化涂层可以沉积在最接近室壁的淋浴喷头。阳极化涂层可以减少喷头和室壁之间的电弧，并因此增强膜的性质并增加沉积速率。

9. 发明申请

WO2010083271A2 SUBSTRATE SUPPORT WITH GAS INTRODUCTION OPENINGS 审中-公开
标题翻译：基础支持与气体介绍开幕
公开(公告)号：WO2010083271A2
公开(公告)日：2010-07-22
申请号：PCT/US2010/020979
申请日：2010-01-14
申请人： APPLIED MATERIALS, INC. , KIM, Sam H. , WHITE, John M. , CHOI, Soo Young , SORENSEN, Carl A. , TINER, Robin L. , PARK, Beom Soo
发明人： KIM, Sam H. , WHITE, John M. , CHOI, Soo Young , SORENSEN, Carl A. , TINER, Robin L. , PARK, Beom Soo
IPC分类号： H01L21/683 , H01L21/687 , H01L21/203 , H01L21/205
CPC分类号： H01L21/68742 , H01L21/6831
摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
摘要翻译：本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。当大面积基板被放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全地与基板支撑件齐平。气囊可导致基板上的不均匀沉积。因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。在沉积期间，静电电荷可能积聚并导致基板粘附到基板支撑件。通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

10. 发明申请

WO2009055388A1 NIP-NIP THIN-FILM PHOTOVOLTAIC STRUCTURE 审中-公开
标题翻译： NIP-NIP薄膜光伏结构
公开(公告)号：WO2009055388A1
公开(公告)日：2009-04-30
申请号：PCT/US2008/080641
申请日：2008-10-21
申请人： APPLIED MATERIALS, INC. , WHITE, John M. , CHOI, Soo Young
发明人： WHITE, John M. , CHOI, Soo Young
IPC分类号： H01L31/042
CPC分类号： H01L31/076 , H01L31/0475 , H01L31/18 , H01L31/1824 , H01L31/1884 , H01L31/202 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A thin film multi-junction photovoltaic structure is presented as well as methods and apparatus for forming the same. The photovoltaic structure comprises first and second NIP junctions formed over a translucent substrate.
摘要翻译：介绍了薄膜多结光伏结构及其形成方法和装置。光伏结构包括在半透明基板上形成的第一和第二NIP结。

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