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1. 发明申请

WO2010065474A3 MODULATION OF RF RETURNING STRAPS FOR UNIFORMITY CONTROL 审中-公开
标题翻译： RF均匀性控制回归带的调整
公开(公告)号：WO2010065474A3
公开(公告)日：2010-08-12
申请号：PCT/US2009066147
申请日：2009-11-30
申请人： APPLIED MATERIALS INC , TSO ALAN , HOFFMAN DANIEL J , TANAKA TSUTOMU TOM , TAYLOR WILLIAM NIXON JR , WANG RONGPING , WHITE JOHN M
发明人： TSO ALAN , HOFFMAN DANIEL J , TANAKA TSUTOMU TOM , TAYLOR WILLIAM NIXON JR , WANG RONGPING , WHITE JOHN M
IPC分类号： H01L21/205 , H05H1/36
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32183
摘要： Embodiments of the present invention generally relates to a method and apparatus for processing substrates using plasma. More particularly, embodiments of the present invention provide a plasma processing chamber having an electrode coupled to a plurality of RF returning straps, wherein impedance of the RF returning straps are set and/or adjusted to tune the plasma distribution during processing. In one embodiment, impedance of RF returning straps varies by changing length of the RF returning straps, by changing width of the RF returning straps, by changing spacing of the RF returning straps, by changing location of the RF returning straps, by adding a capacitor to the RF returning straps, or by combinations thereof.
摘要翻译：本发明的实施例总体上涉及使用等离子体处理衬底的方法和装置。更具体地说，本发明的实施例提供了一种等离子体处理室，其具有耦合到多个RF返回带的电极，其中RF回程带的阻抗被设置和/或调整以调整处理期间的等离子体分布。在一个实施例中，RF返回带的阻抗通过改变RF返回带的长度，通过改变RF返回带的宽度，通过改变RF返回带的间隔，通过改变RF返回带的位置，通过添加电容器到RF返回带或通过它们的组合。

2. 发明申请

WO2006074489A1 LOW-FREQUENCY BIAS POWER IN HDP-CVD PROCESSES 审中-公开
标题翻译： HDP-CVD工艺中的低频偏置功率
公开(公告)号：WO2006074489A1
公开(公告)日：2006-07-13
申请号：PCT/US2006/000994
申请日：2006-01-10
申请人： APPLIED MATERIALS, INC. , WANG, Rongping , LAI, Canfeng , TRACHUK, Yuri , SALIMIAN, Siamak
发明人： WANG, Rongping , LAI, Canfeng , TRACHUK, Yuri , SALIMIAN, Siamak
IPC分类号： H01J37/32 , C23C16/40
CPC分类号： H01J37/321
摘要： A substrate processing system (110) has a housing that defines a process chamber (113) . A substrate holder (118) disposed within the process chamber supports a substrate (117) during substrate processing. A gas-delivery system (133) introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system (180a) forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system (180b) generates an electrical bias on the substrate at a frequency less than 5 MHz . A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.
摘要翻译：衬底处理系统（110）具有限定处理室（113）的壳体。设置在处理室内的衬底保持器（118）在衬底处理期间支撑衬底（117）。气体输送系统（133）将气体引入处理室。压力控制系统在处理室内维持选定的压力。高密度等离子体产生系统（180a）在处理室内形成密度大于1011离子/ cm3的等离子体。射频偏置系统（180b）以小于5MHz的频率在衬底上产生电偏压。控制器控制气体输送系统，压力控制系统，高密度等离子体发生系统和射频偏置系统。

3. 发明申请

WO2008036210A3 METHODS OF AND APPARATUS FOR MEASURING AND CONTROLLING WAFER POTENTIAL IN PULSED RF BIAS PROCESSING 审中-公开
标题翻译：用于测量和控制脉冲RF偏置加工中的波长电位的方法和装置
公开(公告)号：WO2008036210A3
公开(公告)日：2008-07-31
申请号：PCT/US2007020050
申请日：2007-09-14
申请人： LAM RES CORP , KUTHI ANDRAS , HWANG STEPHEN , VETTER JAMES C , EILENSTINE GREG , NGO TUAN , WANG RONGPING
发明人： KUTHI ANDRAS , HWANG STEPHEN , VETTER JAMES C , EILENSTINE GREG , NGO TUAN , WANG RONGPING
IPC分类号： H01T23/00
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32174 , H01L22/26
摘要： Apparatus and methods are provided to detect and control a voltage potential (68) applied in a plasma chamber (40) for processing a semiconductor wafer (46). The plasma chamber includes circuitry (82) for monitoring and adjusting a pulsed RF bias voltage signal (6 to be applied to a chuck (66) in the plasma chamber, where the chuck is configured to mount the wafer for processing. Further include is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.
摘要翻译：提供了用于检测和控制施加在等离子体室（40）中用于处理半导体晶片（46）的电压电位（68）的装置和方法。等离子体室包括用于监测和调节脉冲RF偏置电压信号（6）以被施加到等离子体室中的卡盘（66）的电路（82），其中卡盘被配置为安装用于处理的晶片，还包括反馈电路，用于根据反馈信号和RF偏置电压信号的期望电压值之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压。

4. 发明申请

WO2006055459A2 TENSILE AND COMPRESSIVE STRESSED MATERIALS FOR SEMICONDUCTORS 审中-公开
标题翻译：用于半导体的拉伸和压缩应力材料
公开(公告)号：WO2006055459A2
公开(公告)日：2006-05-26
申请号：PCT/US2005/041079
申请日：2005-11-10
申请人： APPLIED MATERIALS, INC. , BALSEANU, Mihaela , JUNG, Kee, Bum , HUANG, Lihua, Li , XIA, Li-Qun , WANG, Rongping , WITTY, Derek, R. , STERN, Lewis , SEAMONS, Martin, Jay , M'SAAD, Hichem , KWAN, Michael, Chiu
发明人： BALSEANU, Mihaela , JUNG, Kee, Bum , HUANG, Lihua, Li , XIA, Li-Qun , WANG, Rongping , WITTY, Derek, R. , STERN, Lewis , SEAMONS, Martin, Jay , M'SAAD, Hichem , KWAN, Michael, Chiu
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/5096 , C23C16/56 , H01J37/32082 , H01L21/02274 , H01L21/3105 , H01L21/3185 , H01L2924/0002 , H01L2924/00
摘要： A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The as-deposited stressed material can be exposed to ultraviolet radiation or electron beams to increase the stress value of the deposited material. In addition or in the alternative, a nitrogen plasma treatment can be used to increase the stress value of the material during deposition. Pulsed plasma methods to deposit stressed materials are also described.
摘要翻译：在基板上形成应力膜。将基板放置在处理区中，并且等离子体由设置在处理区中的工艺气体形成，工艺气体具有含硅气体和含氮气体。还可以加入稀释气体如氮气。沉积的应力材料可以暴露于紫外线辐射或电子束以增加沉积材料的应力值。另外或替代地，可以使用氮等离子体处理来增加沉积期间材料的应力值。还描述了用于沉积应力材料的脉冲等离子体方法。

5. 发明申请

WO2006055459A3 TENSILE AND COMPRESSIVE STRESSED MATERIALS FOR SEMICONDUCTORS 审中-公开
标题翻译：用于半导体的拉伸和压缩应力材料
公开(公告)号：WO2006055459A3
公开(公告)日：2007-07-12
申请号：PCT/US2005041079
申请日：2005-11-10
申请人： APPLIED MATERIALS INC , BALSEANU MIHAELA , JUNG KEE BUM , HUANG LIHUA LI , XIA LI-QUN , WANG RONGPING , WITTY DEREK R , STERN LEWIS , SEAMONS MARTIN JAY , M SAAD HICHEM , KWAN MICHAEL CHIU
发明人： BALSEANU MIHAELA , JUNG KEE BUM , HUANG LIHUA LI , XIA LI-QUN , WANG RONGPING , WITTY DEREK R , STERN LEWIS , SEAMONS MARTIN JAY , M SAAD HICHEM , KWAN MICHAEL CHIU
IPC分类号： H01L21/318 , C23C16/34 , C23C16/56 , H01L21/3105
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/5096 , C23C16/56 , H01J37/32082 , H01L21/3105 , H01L2924/0002 , H01L2924/00
摘要： A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The as-deposited stressed material can be exposed to ultraviolet radiation or electron beams to increase the stress value of the deposited material. In addition or in the alternative, a nitrogen plasma treatment can be used to increase the stress value of the material during deposition. Pulsed plasma methods to deposit stressed materials are also described.
摘要翻译：在基板上形成应力膜。将基板放置在处理区中，并且等离子体由设置在处理区中的工艺气体形成，工艺气体具有含硅气体和含氮气体。还可以加入稀释气体如氮气。沉积的应力材料可以暴露于紫外线辐射或电子束以增加沉积材料的应力值。另外或替代地，可以使用氮等离子体处理来增加沉积期间材料的应力值。还描述了用于沉积应力材料的脉冲等离子体方法。

6. 发明申请

WO2006127463A3 METHOD TO INCREASE TENSILE STRESS OF SILICON NITRIDE FILMS BY USING A POST PECVD DEPOSITION UV CURE 审中-公开
公开(公告)号：WO2006127463A3
公开(公告)日：2006-11-30
申请号：PCT/US2006/019459
申请日：2006-05-18
申请人： APPLIED MATERIALS, INC. , BALSEANU, Mihaela , COX, Michael, S. , XIA, Li-Qun , SHEK, Mei-Yee , LEE, Jia , ZUBKOV, Vladimir , HUANG, Tzu-Fang , WANG, Rongping , ROFLOX, Isabelita , M'SAAD, Hichem
发明人： BALSEANU, Mihaela , COX, Michael, S. , XIA, Li-Qun , SHEK, Mei-Yee , LEE, Jia , ZUBKOV, Vladimir , HUANG, Tzu-Fang , WANG, Rongping , ROFLOX, Isabelita , M'SAAD, Hichem
IPC分类号： H01L21/314 , H01L21/318 , C23C16/34 , H01L21/8234 , H01L21/8238
摘要： High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.

7. 发明申请

WO2010065474A2 MODULATION OF RF RETURNING STRAPS FOR UNIFORMITY CONTROL 审中-公开
标题翻译： RF恢复条的调制用于均匀控制
公开(公告)号：WO2010065474A2
公开(公告)日：2010-06-10
申请号：PCT/US2009/066147
申请日：2009-11-30
申请人： APPLIED MATERIALS, INC. , TSO, Alan , HOFFMAN, Daniel J. , TANAKA, Tsutomu (Tom) , TAYLOR, William Nixon, Jr. , WANG, Rongping , WHITE, John M.
发明人： TSO, Alan , HOFFMAN, Daniel J. , TANAKA, Tsutomu (Tom) , TAYLOR, William Nixon, Jr. , WANG, Rongping , WHITE, John M.
IPC分类号： H01L21/205 , H05H1/36
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32183
摘要： Embodiments of the present invention generally relates to a method and apparatus for processing substrates using plasma. More particularly, embodiments of the present invention provide a plasma processing chamber having an electrode coupled to a plurality of RF returning straps, wherein impedance of the RF returning straps are set and/or adjusted to tune the plasma distribution during processing. In one embodiment, impedance of RF returning straps varies by changing length of the RF returning straps, by changing width of the RF returning straps, by changing spacing of the RF returning straps, by changing location of the RF returning straps, by adding a capacitor to the RF returning straps, or by combinations thereof.
摘要翻译：本发明的实施例一般涉及一种使用等离子体处理衬底的方法和装置。更具体地，本发明的实施例提供了一种具有耦合到多个RF返回带的电极的等离子体处理室，其中设置和/或调整RF返回带的阻抗以调整处理期间的等离子体分布。在一个实施例中，通过改变RF返回带的宽度，通过改变RF返回带的间隔，通过改变RF返回带的位置，通过增加一个电容器到RF返回带或其组合。

8. 发明申请

WO2013059698A1 METHOD AND APPARATUS FOR FABRICATING SILICON HETEROJUNCTION SOLAR CELLS 审中-公开
标题翻译：用于制造硅异质太阳能电池的方法和装置
公开(公告)号：WO2013059698A1
公开(公告)日：2013-04-25
申请号：PCT/US2012/061162
申请日：2012-10-19
申请人： APPLIED MATERIALS, INC. , SHENG, Shuran , ZHANG, Lin , YUAN, Zheng , WANG, Rongping , TSO, Alan
发明人： SHENG, Shuran , ZHANG, Lin , YUAN, Zheng , WANG, Rongping , TSO, Alan
IPC分类号： H01L31/18 , H01L31/042 , C23C16/44
CPC分类号： H01L21/0257 , C23C16/24 , C23C16/44 , C23C16/4585 , C23C16/5096 , H01J37/32082 , H01J37/32577 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating a semiconductor layer within a plasma enhanced chemical vapor deposition (PECVD) apparatus. The PECVD apparatus includes a plurality of walls defining a processing region, a substrate support, a shadow frame, a gas distribution showerhead, a gas source in fluid communication with the gas distribution showerhead and the processing region, a radio frequency power source coupled to the gas distribution showerhead, and one or more VHF grounding straps electrically coupled to at least one of the plurality of walls. The VHF grounding straps provide a low-impedance current path between at least one of the plurality of walls and at least one of a shadow frame or the substrate support. The method further includes delivering a semiconductor precursor gas and a dopant precursor gas and delivering a very high frequency (VHF) power to generate a plasma to form a first layer on the one or more substrates.
摘要翻译：一种用于在等离子体增强化学气相沉积（PECVD）装置内制造半导体层的方法。 PECVD装置包括限定处理区域的多个壁，基板支撑件，阴影框架，气体分配喷头，与气体分配喷头和处理区域流体连通的气体源，耦合到气体分配喷头和与多个壁中的至少一个电连接的一个或多个VHF接地带。 VHF接地带在多个壁中的至少一个和阴影框架或衬底支撑件中的至少一个之间提供低阻抗电流路径。该方法还包括传输半导体前体气体和掺杂剂前体气体并输送非常高频（VHF）的功率以产生等离子体以在一个或多个基底上形成第一层。

9. 发明申请

WO2013059542A1 METHOD AND APPARATUS FOR FABRICATING SILICON HETEROJUNCTION SOLAR CELLS 审中-公开
标题翻译：用于制造硅异质太阳能电池的方法和装置
公开(公告)号：WO2013059542A1
公开(公告)日：2013-04-25
申请号：PCT/US2012/060940
申请日：2012-10-19
申请人： APPLIED MATERIALS, INC. , SHENG, Shuran , ZHANG, Lin , YUAN, Zheng , WANG, Rongping , TSO, Alan
发明人： SHENG, Shuran , ZHANG, Lin , YUAN, Zheng , WANG, Rongping , TSO, Alan
IPC分类号： H01L31/18 , H01L31/042 , C23C16/44
CPC分类号： H01L21/0257 , C23C16/24 , C23C16/44 , C23C16/4585 , C23C16/5096 , H01J37/32082 , H01J37/32577 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating a semiconductor layer within a plasma enhanced chemical vapor deposition (PECVD) apparatus. The PECVD apparatus includes a plurality of walls defining a processing region, a substrate support, a shadow frame, a gas distribution showerhead, a gas source in fluid communication with the gas distribution showerhead and the processing region, a radio frequency power source coupled to the gas distribution showerhead, and one or more VHF grounding straps electrically coupled to at least one of the plurality of walls. The one or more VHF grounding straps provide a low-impedance current path between the shadow frame and the at least one of the plurality of walls. The method further includes delivering a semiconductor precursor gas and a dopant precursor gas and delivering a very high frequency (VHF) power to generate a plasma to form a first layer on the one or more substrates.
摘要翻译：一种用于在等离子体增强化学气相沉积（PECVD）装置内制造半导体层的方法。 PECVD装置包括限定处理区域的多个壁，基板支撑件，阴影框架，气体分配喷头，与气体分配喷头和处理区域流体连通的气体源，耦合到气体分配喷头和与多个壁中的至少一个电连接的一个或多个VHF接地带。一个或多个VHF接地带在阴影框架和多个壁中的至少一个之间提供低阻抗电流路径。该方法还包括传输半导体前体气体和掺杂剂前体气体并输送非常高频（VHF）的功率以产生等离子体以在一个或多个基底上形成第一层。

10. 发明申请

WO2008036210A2 METHODS OF AND APPARATUS FOR MEASURING AND CONTROLLING WAFER POTENTIAL IN PULSED RF BIAS PROCESSING 审中-公开
标题翻译：用于测量和控制脉冲RF偏置加工中的波长电位的方法和装置
公开(公告)号：WO2008036210A2
公开(公告)日：2008-03-27
申请号：PCT/US2007/020050
申请日：2007-09-14
申请人： LAM RESEARCH CORPORATION , KUTHI, Andras , HWANG, Stephen , VETTER, James, C. , EILENSTINE, Greg , NGO, Tuan , WANG, Rongping
发明人： KUTHI, Andras , HWANG, Stephen , VETTER, James, C. , EILENSTINE, Greg , NGO, Tuan , WANG, Rongping
IPC分类号： G01R1/00
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32174 , H01L22/26
摘要： Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit. The sample and hold circuit is triggered at the sampling time for sampling each of the individual detected pulses to determine and hold a voltage value representing a peak peak-to-peak voltage value of each individual detected pulse, and the sample and hold circuit is configured to provide a feedback signal representing the peak peak-to-peak voltage value of at least one of the detected pulses. Further included is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.
摘要翻译：提供了用于检测和控制施加在等离子体室中用于处理半导体晶片的电压电势的装置和方法。等离子体室包括用于监测和调整要施加到等离子体室中的卡盘的脉冲RF偏置电压信号的电路，其中卡盘被配置为安装用于处理的晶片。电路包括用于检测施加到卡盘的脉冲RF偏置电压信号的各个脉冲的RF偏置电压检测器。提供了一种定时电路，用于确定对各个检测到的脉冲进行采样的时间和采样和保持电路。采样和保持电路在采样时间被触发，以对各个检测到的脉冲进行采样，以确定和保持表示每个单独检测到的脉冲的峰值峰峰值电压值的电压值，并且采样和保持电路被配置以提供代表检测到的脉冲中至少一个的峰值峰 - 峰电压值的反馈信号。还包括反馈电路，用于根据反馈信号和RF偏置电压信号的期望电压值之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压。

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