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11. 发明申请

WO2011039316A1 METHOD FOR COATING A SUBSTRATE AND COATER 审中-公开
标题翻译：涂层和涂层的方法
公开(公告)号：WO2011039316A1
公开(公告)日：2011-04-07
申请号：PCT/EP2010/064574
申请日：2010-09-30
申请人： APPLIED MATERIALS, INC. , BENDER, Marcus , HANIKA, Markus , SCHEER, Evelyn , PIERALISI, Fabio , MAHNKE, Guido
发明人： BENDER, Marcus , HANIKA, Markus , SCHEER, Evelyn , PIERALISI, Fabio , MAHNKE, Guido
IPC分类号： H01J37/34
CPC分类号： H01J37/3405 , H01J37/3452 , H01J37/3455
摘要： A method is provided for coating a substrate (100) with a cathode assembly (10) having a rotatable target (20). The rotatable target has at least one magnet assembly (25) positioned there within. The method includes positioning the magnet assembly at a first position so that it is asymmetrically aligned with respect to a plane (22) perpendicularly extending from the substrate (100) to the axis (21) of the rotatable target for a predetermined first time interval; positioning the magnet assembly at a second position that is asymmetrically aligned with respect to said plane (22) for a predetermined second time interval; and providing a voltage to the rotatable target that is varied over time during coating. Further, a coater is provided that includes a cathode assembly with a rotatable curved target; and two magnet assemblies positioned within the rotatable curved target wherein the distance between the two magnet assemblies can be varied.
摘要翻译：提供了一种用具有可旋转靶（20）的阴极组件（10）涂覆基底（100）的方法。可旋转靶具有定位在其内的至少一个磁体组件（25）。该方法包括将磁体组件定位在第一位置，使得其相对于从基板（100）垂直延伸到可旋转靶的轴线（21）的平面（22）以预定的第一时间间隔对准地对准; 将磁体组件定位在相对于所述平面（22）不对称对准预定的第二时间间隔的第二位置处; 以及向涂覆期间随时间变化的可旋转靶提供电压。此外，提供一种包括具有可旋转弯曲目标的阴极组件的涂布机; 以及位于可旋转弯曲目标内的两个磁体组件，其中两个磁体组件之间的距离可以改变。

12. 发明申请

WO2016180447A1 METHOD OF MANUFACTURING A LAYER FOR DISPLAY MANUFACTURING USING HYDROGEN AND APPARATUS THEREFORE 审中-公开
标题翻译：使用氢气和装置制造显示器制造层的方法
公开(公告)号：WO2016180447A1
公开(公告)日：2016-11-17
申请号：PCT/EP2015/060232
申请日：2015-05-08
申请人： APPLIED MATERIALS, INC. , SEVERIN, Daniel , KLÖPPEL, Andreas , HANIKA, Markus , BENDER, Marcus
发明人： SEVERIN, Daniel , KLÖPPEL, Andreas , HANIKA, Markus , BENDER, Marcus
IPC分类号： C23C14/08 , C23C14/34 , C23C14/54
CPC分类号： C23C14/083 , C23C14/3492 , C23C14/54
摘要： A method of manufacturing a layer for a plurality of thin film transistors for display manufacturing and an apparatus therefore is described. The method includes sputtering a transparent conductive oxide layer from an indium oxide containing target in a processing gas atmosphere. The processing gas atmosphere includes H 2 , O 2 , and an inert gas, wherein the content of H 2 is from 2.2% to 20.0%, the content of O 2 is from 0.5% to 15.0%, and the content of inert gas is from 65.0% to 97.3 %. The apparatus (200) includes a vacuum chamber (210); one or more indium oxide containing targets (220a, 220b) within the vacuum chamber for sputtering a transparent conductive oxide layer; a gas distribution system (230) for providing a processing gas within the vacuum chamber; and a controller (240) connected to the gas distribution system and configured to execute a program code for conducting the method.
摘要翻译：因此，制造用于显示制造的多个薄膜晶体管的层的方法和装置。该方法包括在处理气体气氛中从含氧化铟的靶溅射透明导电氧化物层。处理气体气氛包括H 2，O 2和惰性气体，其中H 2的含量为2.2％至20.0％，O 2的含量为0.5％至15.0％，惰性气体的含量为65.0％至 97.3％。设备（200）包括真空室（210）; 在真空室内的一个或多个含氧化铟的靶（220a，220b）用于溅射透明导电氧化物层; 气体分配系统（230），用于在所述真空室内提供处理气体; 以及连接到所述气体分配系统并被配置为执行用于执行所述方法的程序代码的控制器（240）。

13. 发明申请

WO2016095976A1 APPARATUS AND METHOD FOR COATING A SUBSTRATE WITH A MOVABLE SPUTTER ASSEMBLY AND CONTROL OVER POWER PARAMETERS 审中-公开
标题翻译：用于将可移动的飞溅器组件涂覆在基板上的控制装置和方法
公开(公告)号：WO2016095976A1
公开(公告)日：2016-06-23
申请号：PCT/EP2014/078057
申请日：2014-12-16
申请人： APPLIED MATERIALS, INC. , SEVERIN, Daniel , HANIKA, Markus , BENDER, Marcus , LINDENBERG, Ralph
发明人： SEVERIN, Daniel , HANIKA, Markus , BENDER, Marcus , LINDENBERG, Ralph
IPC分类号： C23C14/50 , C23C14/34 , C23C14/35 , C23C14/56 , C23C14/54 , H01J37/34 , C23C14/00 , H01J37/32
CPC分类号： C23C14/3492 , C23C14/0063 , C23C14/352 , C23C14/54 , C23C14/542 , C23C14/562 , H01J37/32733 , H01J37/3405 , H01J37/3417 , H01J37/3444 , H01J37/3447 , H01J37/347
摘要： According to embodiments, an apparatus and a method for coating a substrate in a vacuum process chamber are provided. The method includes sputtering a sputter material from a sputter source while a first power is applied to the sputter source, wherein the sputter source is located in a first position relative to the substrate. The method includes moving the sputter source in a translational movement relative to the vacuum chamber while sputtering. The method further includes sputtering the sputter material from the sputter source while a second power is applied to the sputter source, wherein the sputter source is located in a second position relative to the substrate.
摘要翻译：根据实施例，提供了一种用于在真空处理室中涂覆基板的装置和方法。该方法包括在将第一功率施加到溅射源的同时从溅射源溅射溅射材料，其中溅射源位于相对于衬底的第一位置。该方法包括在溅射时相对于真空室的平移运动移动溅射源。该方法还包括在溅射源施加第二功率的同时从溅射源溅射溅射材料，其中溅射源相对于衬底位于第二位置。

14. 发明申请

WO2009059817A1 SPUTTER COATING DEVICE AND COATING METHOD 审中-公开
标题翻译：溅射涂层装置和涂层方法
公开(公告)号：WO2009059817A1
公开(公告)日：2009-05-14
申请号：PCT/EP2008/058654
申请日：2008-07-04
申请人： APPLIED MATERIALS INC., A CORPORATION OF THE STATE OF DELAWARE , MOELLE, Christoph , LOPP, Andreas , KLOEPPEL, Andreas , STOLLEY, Tobias , LINDENBERG, Ralph , BENDER, Marcus
发明人： MOELLE, Christoph , LOPP, Andreas , KLOEPPEL, Andreas , STOLLEY, Tobias , LINDENBERG, Ralph , BENDER, Marcus
IPC分类号： H01J37/34
CPC分类号： H01J37/3408 , H01J37/3452 , H01J37/3455
摘要： A magnet/target assembly (1) comprises a target (2) consisting of a plurality of (virtual) segments (2.1, 2.2, 2.3, 2.4, 2.5, 2.6) arranged side by side, each of them extending along the longitudinal axis x of the target (2). Each of the plurality of target segments (2.1, 2.2, 2.3, 2.4, 2.5, 2.6) has a magnet system (3.1, 3.2, 3.3, 3.4, 3.5, 3.6) attributed to the respective target segment. In an embodiment of the target/magnet assembly (1) according to the present invention the magnet systems (3.1, 3.2, 3.3, 3.4, 3.5, 3.6) are arranged mutually offset relative to their respective adjacent magnet systems (3.1, 3.2, 3.3, 3.4, 3.5 and 3.6), respectively, while scanning the target segments (2.1, 2.2, 2.3, 2.4, 2.5 and 2.6), respectively. Particularly, the first magnet system (3.1), the third magnet system (3.3) and the fifth magnet system (3.5) are a first group of magnet systems moving parallel and synchronously with each other, and the second magnet system (3.2), the forth magnet systems (3.4) and the sixth magnet system (3.6) are a second group of magnet systems moving parallel and synchronously with each other. The first, third and fifth magnet systems (3.1, 3.3, 3.5) are alternately arranged with the second, forth and sixth magnet systems (3.2, 3.4 and 3.6), respectively, in the lateral direction y of the target (2). The paths of movement of the magnet systems are arranged parallel. The first and second groups of magnet systems (3.1, 3.2, 3.3, 3.4, 3.5, 3.6) are arranged offset in a longitudinal direction x of the target (2), i.e. arranged with a distance d between the groups in the longitudinal direction x of the target (2).
摘要翻译：磁体/目标组件（1）包括由并排设置的多个（虚拟）段（2.1,2.2,2.3,2.4,2.5,2.6）组成的目标（2），每个都沿着纵向轴线x 的目标（2）。多个目标段（2.1,2.2,2.3,2.4,2.5,2.6）中的每一个具有归因于相应目标段的磁体系统（3.1,3.2,3.3,3.4,3.5,3.6）。在根据本发明的靶/磁体组件（1）的实施例中，磁体系统（3.1,3.2,3.3,3.4,3.5,3.6）相对于它们各自相邻的磁体系统（3.1,3.2,3.3 ，3.4,3.5和3.6），分别扫描目标段（2.1,2.2,2.3,2.4,2.5和2.6）。特别地，第一磁体系统（3.1），第三磁体系统（3.3）和第五磁体系统（3.5）是彼此平行和同步移动的第一组磁体系统，第二磁体系统（3.2），第四磁体系统（3.4）和第六磁体系统（3.6）是彼此平行和同步移动的第二组磁体系统。第一，第三和第五磁体系统（3.1,3.3,3.5）分别与靶（2）的横向方向y分别与第二，第四和第六磁体系统（3.2,3.4和3.6）配置。磁体系统的运动路径平行排列。第一和第二组磁体系统（3.1,3.2,3.3,3.4,3.5,3.6）在目标（2）的纵向方向x上偏移地布置，即沿着纵向方向x之间的距离d 的目标（2）。

15. 发明申请

WO2019185183A1 VACUUM PROCESSING APPARATUS AND METHOD OF PROCESSING A SUBSTRATE 审中-公开
公开(公告)号：WO2019185183A1
公开(公告)日：2019-10-03
申请号：PCT/EP2018/083003
申请日：2018-11-29
申请人： APPLIED MATERIALS, INC. , HANIKA, Markus , OLSON, Joseph C. , KURUNCZI, Peter F. , YIM, Dong-Kil , BENDER, Marcus
发明人： HANIKA, Markus , OLSON, Joseph C. , KURUNCZI, Peter F. , YIM, Dong-Kil , BENDER, Marcus
IPC分类号： C23C14/56 , C23C14/50 , H01L21/677 , H01L21/67 , B65G49/06 , H01L21/687
摘要： A vacuum processing apparatus for processing a substrate is described. The vacuum processing apparatus includes a vacuum chamber; at least two processing stations adjacent to the vacuum chamber and operationally coupled to the vacuum chamber, a surface of a substrate has different orientations when the substrate is treated in different processing stations and at least one of the processing stations comprises a linear source with a longitudinal axis, for treating the substrate; and a substrate support. The substrate support includes a support body for holding a substrate; and an actuator configured to move the support body from a non-vertical position around an axis in front of the processing station to a non-horizontal position.

16. 发明申请

WO2014127845A1 DEPOSITION APPARATUS WITH GAS SUPPLY AND METHOD FOR DEPOSITING MATERIAL 审中-公开
标题翻译：具有气体供应的沉积装置和沉积材料的方法
公开(公告)号：WO2014127845A1
公开(公告)日：2014-08-28
申请号：PCT/EP2013/053720
申请日：2013-02-25
申请人： APPLIED MATERIALS, INC. , ZILBAUER, Thomas Werner , BENDER, Marcus
发明人： ZILBAUER, Thomas Werner , BENDER, Marcus
IPC分类号： C23C14/00 , C23C14/22 , H01L21/02
CPC分类号： C23C14/0036 , C23C14/0047 , C23C14/0063 , C23C14/06 , C23C14/0641 , C23C14/0652 , C23C14/0676 , C23C14/0694 , C23C14/081 , C23C14/083 , C23C14/086
摘要： An apparatus for depositing a material on a substrate (310) is described. The apparatus includes a vacuum chamber (300); a substrate receiving portion (305) in the vacuum chamber for receiving the substrate during deposition of the material; a target support (320) configured to hold a target (330) during deposition of the material on the substrate (305); a plasma generating device in the vacuum chamber (300) for generating a plasma between the substrate receiving portion (305) and the target support (320); and a first gas inlet (360) for providing a supersonic stream of a gas (365), wherein the gas inlet is directed towards the substrate receiving portion (305). Further, a method for depositing a material on a substrate (310) in a vacuum chamber (300) is described. The method includes forming a plasma between the substrate (310) and a target (330); releasing particles (335) from the target (330) using the plasma; and directing a supersonic stream of gas (365) towards the substrate surface, on which the material is to be deposited.
摘要翻译：描述了一种用于在衬底（310）上沉积材料的装置。该设备包括真空室（300）; 真空室中的衬底接收部分（305），用于在材料沉积期间接收衬底; 目标支撑件（320），其配置成在所述材料沉积在所述基底（305）上时保持目标（330）; 用于在所述基板接收部分（305）和所述目标支撑件（320）之间产生等离子体的所述真空室（300）中的等离子体产生装置; 和用于提供气体（365）的超音速流的第一气体入口（360），其中所述气体入口指向所述衬底接收部分（305）。此外，描述了在真空室（300）中的衬底（310）上沉积材料的方法。该方法包括在衬底（310）和靶（330）之间形成等离子体; 使用等离子体从靶（330）释放颗粒（335）; 并将气体（365）的超音速流引向所述材料将要沉积的衬底表面。

17. 发明申请

WO2013060355A1 MULTIDIRECTIONAL RACETRACK ROTARY CATHODE FOR PVD ARRAY APPLICATIONS 审中-公开
标题翻译： PVD阵列应用的多媒体旋转阴极
公开(公告)号：WO2013060355A1
公开(公告)日：2013-05-02
申请号：PCT/EP2011/068552
申请日：2011-10-24
申请人： APPLIED MATERIALS, INC. , SCHEER, Evelyn , HANIKA, Markus , LINDENBERG, Ralph , BENDER, Marcus , LOPP, Andreas , SCHWANITZ, Konrad , PIERALISI, Fabio , LIU, Jian
发明人： SCHEER, Evelyn , HANIKA, Markus , LINDENBERG, Ralph , BENDER, Marcus , LOPP, Andreas , SCHWANITZ, Konrad , PIERALISI, Fabio , LIU, Jian
IPC分类号： C23C14/34 , C23C14/35 , H01J37/34
CPC分类号： H01J37/32532 , C23C14/3407 , C23C14/35 , H01J37/3405 , H01J37/345 , H01J37/3452 , H01J37/3455
摘要： A cathode assembly (130; 200; 300; 400) for a sputter deposition apparatus and a method for coating a substrate is provided. The cathode assembly has a coating side for coating on a substrate. Further, the cathode assembly includes a rotary target assembly adapted for rotating a target material (210; 310; 410) around a rotary axis (220; 320; 420); at least a first magnet assembly (230; 330; 340; 430; 431; 432; 433) having an inner magnet pole and at least one outer magnet poles and being adapted for generating one or more plasma regions (240; 250; 340; 350; 440; 441; 442; 443). The cathode assembly (130; 200; 300; 400) has a first angular coordinate for a magnet pole, the magnet pole being provided for the coating side, and a second angular coordinate for a further magnet pole, the magnet pole being provided for the coating side; wherein the first angular coordinate (260; 360; 460) and the second angular coordinate (270; 370; 461) define an angle a larger than about 20 degrees and smaller than about 160 degrees.
摘要翻译：提供了一种用于溅射沉积设备的阴极组件（130; 200; 300; 400）和一种用于涂覆衬底的方法。阴极组件具有用于在基板上涂覆的涂层侧。此外，阴极组件包括适于围绕旋转轴线（220; 320; 420）旋转靶材料（210; 310; 410）的旋转靶组件; 至少一个具有内磁极和至少一个外磁极的第一磁体组件（230; 330; 340; 430; 431; 432; 433），并适于产生一个或多个等离子体区域（240; 250; 340; 350; 440; 441; 442; 443）。阴极组件（130; 200; 300; 400）具有用于磁极的第一角度坐标，为涂层侧提供磁极，并且为另一个磁极设置第二角坐标，磁极设置用于涂层面其中所述第一角坐标（260; 360; 460）和所述第二角坐标（270; 370; 461）限定大于约20度且小于约160度的角度。

18. 发明申请

WO2012041557A1 SYSTEMS AND METHODS FOR FORMING A LAYER OF SPUTTERED MATERIAL 审中-公开
标题翻译：用于形成溅射材料层的系统和方法
公开(公告)号：WO2012041557A1
公开(公告)日：2012-04-05
申请号：PCT/EP2011/062674
申请日：2011-07-22
申请人： APPLIED MATERIALS, INC. , BENDER, Marcus , HANIKA, Markus , SCHEER, Evelyn , PIERALISI, Fabio , MAHNKE, Guido , LINDENBERG, Ralph , LOPP, Andreas , SCHWANITZ, Konrad , LIU, Jian
发明人： BENDER, Marcus , HANIKA, Markus , SCHEER, Evelyn , PIERALISI, Fabio , MAHNKE, Guido , LINDENBERG, Ralph , LOPP, Andreas , SCHWANITZ, Konrad , LIU, Jian
IPC分类号： H01J37/34
CPC分类号： C23C14/352 , C23C14/35 , H01J37/34 , H01J37/3473
摘要： The present disclosure describes a method of coating a substrate (110), the method including forming a layer (806) of sputtered material on the substrate (110). Forming the layer of sputtered material may include: sputtering material from at least one rotatable target (120') over the substrate (110); varying the relative position between the at least one target (120') and the substrate (110). In addition, the present disclosure describes varying the distance between a target (120; 120'; 120'') and a substrate during the sputter process. The present disclosure further describes a system for coating a substrate.
摘要翻译：本公开描述了涂覆基底（110）的方法，该方法包括在基底（110）上形成溅射材料层（806）。形成溅射材料层可以包括：从衬底（110）上的至少一个可旋转靶（120'）溅射材料; 改变所述至少一个靶（120'）和所述衬底（110）之间的相对位置。另外，本公开内容描述了在溅射过程期间改变目标（120; 120'; 120“）和衬底之间的距离。本公开进一步描述了用于涂覆基底的系统。

19. 发明申请

WO2011051294A1 SPUTTER DEPOSITION SYSTEM AND METHOD 审中-公开
标题翻译：溅射沉积系统和方法
公开(公告)号：WO2011051294A1
公开(公告)日：2011-05-05
申请号：PCT/EP2010/066185
申请日：2010-10-26
申请人： APPLIED MATERIALS, INC. , LOPP, Andreas , BENDER, Marcus
发明人： LOPP, Andreas , BENDER, Marcus
IPC分类号： H01J37/34 , C23C14/35
CPC分类号： H01J37/3405 , C23C14/351 , H01J37/347
摘要： A sputter deposition system adapted for depositing a thin film onto a substrate surface is provided. The system includes a cathode assembly having at least two cathode targets opposing the substrate surface and adapted for providing cathode material for forming the thin film. A plasma source is adapted for generating a plasma for sputtering cathode material off the at least two cathode targets. A magnetic field generator is adapted for providing a magnetic field which is controllable independently of the plasma source such that such that a difference between high deposition rate portions and low deposition rate portions is compensated by the action of the magnetic field on charged particle movements.
摘要翻译：提供了一种适用于将薄膜沉积到衬底表面上的溅射沉积系统。该系统包括阴极组件，其具有与衬底表面相对的至少两个阴极靶，并适于提供用于形成薄膜的阴极材料。等离子体源适于产生用于将阴极材料溅射出至少两个阴极靶的等离子体。磁场发生器适于提供可独立于等离子体源控制的磁场，使得通过磁场对带电粒子运动的作用来补偿高沉积速率部分和低沉积速率部分之间的差异。

20. 发明申请

WO2011045398A1 METHOD AND INSTALLATION FOR PRODUCING A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于生产半导体器件的方法和装置以及半导体器件
公开(公告)号：WO2011045398A1
公开(公告)日：2011-04-21
申请号：PCT/EP2010/065478
申请日：2010-10-14
申请人： APPLIED MATERIALS, INC. , SCHEER, Evelyn , PIERALISI, Fabio , BENDER, Marcus
发明人： SCHEER, Evelyn , PIERALISI, Fabio , BENDER, Marcus
IPC分类号： H01L29/45 , H01L29/49 , H01L21/336
CPC分类号： H01L29/458 , H01L21/6776 , H01L29/4908 , H01L29/66765
摘要： A method of producing a semiconductor device is provided, the semiconductor device (50) including a substrate (30), a semiconductor layer (36, 38), and at least one metallization layer (52, 70) adjacent to at least one element chosen from the substrate and the semiconductor layer, the method including forming at least one metallization layer which, adjacent to at least one element chosen from the substrate and the semiconductor layer, includes oxygen.
摘要翻译：提供了一种制造半导体器件的方法，所述半导体器件（50）包括衬底（30），半导体层（36,38）和至少一个金属化层（52,70），所述至少一个金属化层与所选择的至少一个元件相邻所述方法包括形成至少一个金属化层，所述至少一个金属化层与从衬底和半导体层中选择的至少一种元素相邻，包括氧。

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