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91. 发明申请

WO2007025118A2 SYSTEM AND METHOD FOR CRYSTAL GROWING 审中-公开
标题翻译：晶体生长的系统和方法
公开(公告)号：WO2007025118A2
公开(公告)日：2007-03-01
申请号：PCT/US2006/033203
申请日：2006-08-25
申请人： CRYSTAL SYSTEMS, INC. , SCHMID, Frederick , KHATTAK, Chandra, P. , JOYCE, David, B.
发明人： SCHMID, Frederick , KHATTAK, Chandra, P. , JOYCE, David, B.
IPC分类号： C30B11/00 , C30B35/00
CPC分类号： C30B11/007 , C30B29/06 , C30B29/20 , C30B29/42 , Y10S117/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/1024 , Y10T117/1028 , Y10T117/1072 , Y10T117/1092
摘要： To reduce the heat input to the bottom of the crucible and to control heat extraction independently of heat input, a shield can be raised between a heating element and a crucible at a controlled speed as the crystal grows. Other steps could include moving the crucible, but this process can avoid having to move the crucible. A temperature gradient is produced by shielding only a portion of the heating element; for example, the bottom portion of a cylindrical element can be shielded to cause heat transfer to be less in the bottom of the crucible than at the top, thereby causing a stabilizing temperature gradient in the crucible.
摘要翻译：为了减少对坩埚底部的热量输入并且独立于热量输入来控制热量提取，当晶体生长时，屏蔽件可以以受控的速度在加热元件和坩埚之间升高。其他步骤可以包括移动坩埚，但这个过程可以避免不得不移动坩埚。通过只屏蔽加热元件的一部分来产生温度梯度; 例如，可以屏蔽圆柱形元件的底部以使得在坩埚底部的传热比在顶部更少，从而在坩埚中产生稳定的温度梯度。

92. 发明申请

WO2005122691A2 CRYSTAL GROWTH METHOD AND APPARATUS 审中-公开
标题翻译：水晶生长方法和装置
公开(公告)号：WO2005122691A2
公开(公告)日：2005-12-29
申请号：PCT/IL2005/000630
申请日：2005-06-15
申请人： MOSAIC CRYSTALS LTD. , EINAV, Moshe
发明人： EINAV, Moshe
IPC分类号： H01L21/208
CPC分类号： C30B33/06 , C23C24/00 , C30B29/403 , H01L21/0254 , H01L21/02614 , Y10T117/1024
摘要： A method for forming a uniformly oriented crystalline sheet, wherein a plurality of crystallites are introduced into a liquid. At least a portion of the crystallites float on the surface of the liquid, and are induced to self orientate until they are uniformly oriented in a compact mosaic configuration, while their sintering is prevented. A uniformly oriented crystalline sheet is formed from the compact mosaic configuration, for example, by sintering the crystallites. An apparatus for forming a crystalline sheet includes a container containing a liquid, wherein a plurality of crystallites are introduced and at least a portion thereof float on the surface of the liquid without sintering. The apparatus also includes a flow unit for inducing a flow of the liquid which moves the floating crystallites, and self-orientation means for allowing self-orientation of the floating crystallites, without sintering, until the floating crystallites are uniformly oriented in a compact mosaic configuration, ready for forming a uniformly oriented crystalline sheet, for example, by sintering the crystallites.
摘要翻译：一种形成均匀取向的结晶片的方法，其中多个微晶被引入到液体中。至少一部分微晶漂浮在液体的表面上，并被诱导自我定向，直到它们均匀地定向成紧凑的镶嵌结构，同时防止其烧结。由紧凑的镶嵌结构形成均匀取向的结晶片，例如烧结微晶。用于形成结晶片的装置包括容纳液体的容器，其中引入多个微晶，并且其至少一部分浮在液体的表面上而不烧结。该装置还包括用于诱导移动浮动微晶的液体流动的流动单元和用于允许漂浮微晶的自取向而不进行烧结的自动取向装置，直到浮动微晶均匀地定向成紧凑的镶嵌结构，准备形成均匀取向的结晶片，例如烧结微晶。

93. 发明申请

WO2002101126A1 ガリウム含有窒化物バルク単結晶の異種基板上の形成法审中-公开
标题翻译：在异质基材上形成含有氮化镓单晶晶体的方法
公开(公告)号：WO2002101126A1
公开(公告)日：2002-12-19
申请号：PCT/JP2002/005626
申请日：2002-06-06
申请人：アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン , 日亜化学工業株式会社 , シェシュプトフスキレシェック , ドヴィリニスキロベルト , ドラジニスキロマン , ガルチニスキイエジ , 神原康雄
发明人：ドヴィリニスキロベルト , ドラジニスキロマン , ガルチニスキイエジ , 神原康雄
IPC分类号： C30B29/38
CPC分类号： C30B29/406 , C30B7/00 , C30B7/10 , C30B29/403 , H01S5/0281 , H01S5/32341 , Y10T117/10 , Y10T117/102 , Y10T117/1024
摘要： A method of growing a gallium−containing nitride bulk single crystal such as GaN on a heterogeneous substrate such as SiC, comprising the steps of forming in an autoclave a supercritical ammonia solvent containing alkali metal ions, dissolving a gallium−containing feed stock in the supercritical ammonia, and crystallizing, by using the heterogeneous substrate as a seed, a gallium−containing nitride from the feed stock−dissolved supercritical solution under conditions of temperature higher and/or pressure lower than when the gallium−containing feed stock is dissolved into the supercritical solvent, wherein the seed does not contain oxygen among constituent elements, and lattice constant on an a 0 −axis is 2.8−3.6, whereby it is possible to form a gallium nitride compound semiconductor element on a conductive substrate.
摘要翻译：在诸如SiC的异质衬底上生长含镓氮化物本体单晶如GaN的方法包括以下步骤：在高压釜中形成含有碱金属离子的超临界氨溶剂，将含镓原料溶解在超临界氨，并通过使用作为种子的异质底物结晶，在比含镓原料溶解到超临界的温度高和/或低的温度的条件下，来自原料溶解的超临界溶液中的含镓氮化物溶剂，其中所述种子在构成元素中不含氧，并且在α-δ轴上的晶格常数为2.8〜3.6，由此可以在导电性基板上形成氮化镓系化合物半导体元件。

94. 发明申请

WO01092609A2 MULTILAYER STRUCTURED QUARTZ GLASS CRUCIBLE AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：多层结构的石英玻璃可溶性及其制造方法
公开(公告)号：WO01092609A2
公开(公告)日：2001-12-06
申请号：PCT/EP2001/006180
申请日：2001-05-31
IPC分类号： C03B20/00 , C03B19/09 , C30B15/10 , C30B35/00
CPC分类号： C03B19/095 , C30B15/10 , C30B35/002 , Y02P40/57 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T428/13 , Y10T428/131 , Y10T428/1317
摘要： Disclosed is a multilayer structured quartz glass crucible, for pulling up silicon single crystal, whose structure has at least three layers comprising: a translucent outer layer made of naturally occurring quartz glass and having a large number of pores, a translucent intermediate layer, made of synthetic quartz glass and having a large number of pores, and a transparent inner layer substantially free from pores and made of a synthetic quartz glass. Thermal convection within the silicon melt is suppressed by use of the quartz glass crucible, thereby preventing oscillation on the surface of the silicon melt. A method for producing the quartz glas crucible is also disclosed.
摘要翻译：公开了一种多层结构石英玻璃坩埚，用于拉起单晶硅，其结构至少包括三层，包括：由天然石英玻璃制成的具有大量孔的半透明外层，透明中间层，由合成石英玻璃，具有大量的孔，以及基本上不含孔的透明内层，由合成石英玻璃制成。通过使用石英玻璃坩埚来抑制硅熔体内的热对流，从而防止硅熔体表面的振荡。还公开了一种石英玻璃坩埚的制造方法。

95. 发明申请

WO99040242A1 CRUCIBLE AND METHOD OF PREPARATION THEREOF 审中-公开
标题翻译：可制造及其制备方法
公开(公告)号：WO99040242A1
公开(公告)日：1999-08-12
申请号：PCT/US1999/001438
申请日：1999-01-25
IPC分类号： C30B29/06 , C03B19/09 , C30B15/10 , C30B35/00
CPC分类号： C30B35/002 , C03B19/095 , C30B15/10 , Y02P40/57 , Y10T117/1024 , Y10T117/1052
摘要： A quartz crucible for use in the preparation of silicon crystals substantially free from crystal void defects and a process for its preparation are disclosed. The crucible is prepared by introducing quartz powder into a rotating mould in an atmosphere containing less than about 0.5 % insoluble gases such as argon. The quartz powder accumulates along the inner surface of the mould, and is subsequently heated to fuse the quartz powder to produce the crucible. The gases contained in the bubbles in the resulting crucible are comprised of less than about 0.5 % insoluble gases.
摘要翻译：公开了一种用于制备基本上没有晶体空隙缺陷的硅晶体的石英坩埚及其制备方法。坩埚是通过在含有小于约0.5％不溶性气体如氩气的气氛中将石英粉引入旋转模具中制备的。石英粉沿着模具的内表面积聚，随后被加热以熔化石英粉以产生坩埚。所得坩埚中气泡中所含的气体由不到约0.5％的不溶性气体组成。

96. 发明申请

WO1997049845A1 CRYSTAL-GROWING METHOD AND SOLID ELEMENT AND DEVICE FOR CRYSTAL GROWTH USED IN THE METHOD 审中-公开
标题翻译：晶体生长方法和固体元素和方法用于晶体生长
公开(公告)号：WO1997049845A1
公开(公告)日：1997-12-31
申请号：PCT/JP1997002169
申请日：1997-06-23
申请人： SUMITOMO METAL INDUSTRIES, LTD. , SANJOH, Akira
发明人： SUMITOMO METAL INDUSTRIES, LTD.
IPC分类号： C30B29/58
CPC分类号： C30B7/00 , C30B29/58 , Y10T117/1024
摘要： A method for accelerating the crystallization of biopolymers such as a protein. A crystalline silicon element (70) controlled in the valence electrons in such a way that the concentration of holes or electrons present on the surface can be controlled in accordance with the conditions of a buffer solution (72) containing a biopolymer such as a protein is brought into contact with the solution (72) to thereby crystallize the biopolymer on the surface of the element (70); a plurality of grooves or hollows different in size are formed on the element (70) and the valence electrons are controlled in such a way that the crystallization of the biopolymer in the grooves or hollows can be conducted more rapidly than in the outside of them; and the crystals of the biopolymer grow in the grooves or hollows in contact with the solution (72).
摘要翻译：一种促进生物聚合物如蛋白质结晶的方法。控制价电子的晶体硅元件（70）以这样一种方式可以根据包含生物聚合物如蛋白质的缓冲溶液（72）的条件来控制存在于表面上的空穴或电子的浓度，与溶液（72）接触，从而使生物聚合物在元件（70）的表面上结晶; 在元件（70）上形成尺寸不同的多个凹槽或凹槽，并且价电子以这样的方式进行控制，使得生物聚合物在凹槽或凹槽中的结晶可以比其外部更快地进行; 并且生物聚合物的晶体在与溶液（72）接触的凹槽或凹槽中生长。

97. 发明申请

WO1997001592A1 FLUID BED COOLING SYSTEM FOR POLYMER PROCESSING 审中-公开
标题翻译：用于聚合物加工的流体床冷却系统
公开(公告)号：WO1997001592A1
公开(公告)日：1997-01-16
申请号：PCT/US1996003328
申请日：1996-03-11
申请人： HOSOKAWA BEPEX CORPORATION
发明人： HOSOKAWA BEPEX CORPORATION , WALSH, John, J.
IPC分类号： C08G63/88
CPC分类号： F28C3/16 , C08G63/785 , C08G63/80 , C08G63/88 , Y10T117/1024
摘要： A system for the solid phase polymerization of polymers wherein cold amorphous polymer is introduced to a crystallizer (12) and heated to crystallize the polymer, the crystallized polymer is discharged to a reactor to achieve polymerization of the polymer, and the hot polymer product of the reactor is discharged to a fluid bed (12) cooler for cooling of the polymerized product. The fluid bed (12) cooler includes an inlet for the hot polymer and an inlet for the cooling gas, and the cooled polymer and the heated gas are discharged from the cooler (34) after contact of the gas with the polymer. The cooler includes a bed portion through which the polymer moves while in contact with the cooling gas, and an upper chamber which collects the heated gas. The temperature of the polymer gradually decreases from the location of the inlet (52) for the polymer to the location of the discharge for the polymer, and the gas in the upper chamber is hotter in the area of the upper chamber adjacent the inlet (52) for the hot polymer than in the area of the upper chamber adjacent the discharge location of the cooled polymer. At least two outlets (3 and 15) are defined by the upper chamber and a weir baffle is used to separate an upper chamber zone containing the hotter gas from the balance of the upper chamber. Hotter gas (20 and 22) is then discharged to the reactor (32) through an outlet communicating with the upper chamber zone containing the hotter gas.
摘要翻译：一种用于聚合物固相聚合的体系，其中将冷无定形聚合物引入结晶器（12）并加热使聚合物结晶，将结晶的聚合物排出到反应器中，以实现聚合物的热聚合产物反应器被排放到用于冷却聚合产物的冷却器的流化床（12）中。流化床（12）冷却器包括用于热聚合物的入口和用于冷却气体的入口，并且冷却的聚合物和加热的气体在气体与聚合物接触之后从冷却器（34）排出。冷却器包括床部分，聚合物在与冷却气体接触的同时移动，并且收集加热气体的上部室。聚合物的温度从用于聚合物的入口（52）的位置到聚合物的排出位置逐渐减小，并且上部室中的气体在邻近入口（52）的上部室中较热）比在与被冷却的聚合物的排放位置相邻的上室的区域中。至少两个出口（3和15）由上部腔室限定，堰挡板用于将包含较热气体的上部腔室与上部腔室的平衡分开。然后，较热的气体（20和22）通过与含有较热气体的上部室区连通的出口排放到反应器（32）中。

98. 发明申请

WO2014169104A1 PASSIVATION OF NONLINEAR OPTICAL CRYSTALS 审中-公开
标题翻译：非线性光学晶体的钝化
公开(公告)号：WO2014169104A1
公开(公告)日：2014-10-16
申请号：PCT/US2014/033625
申请日：2014-04-10
申请人： KLA-TENCOR CORPORATION
发明人： DRIBINSKI, Vladimir , CHUANG, Yung-Ho Alex
IPC分类号： C23C16/44 , C23C16/52 , G02F1/35 , G01N21/88 , G01N21/95
CPC分类号： C30B33/02 , C30B7/00 , C30B9/00 , C30B29/10 , C30B29/22 , G01N21/87 , G01N21/9501 , G01N21/956 , G01N2021/8477 , Y10T117/1016 , Y10T117/1024
摘要： The passivation of a nonlinear optical crystal for use in an inspection tool includes growing a nonlinear optical crystal in the presence of at least one of fluorine, a fluoride ion and a fluoride-containing compound, mechanically preparing the nonlinear optical crystal, performing an annealing process on the nonlinear optical crystal and exposing the nonlinear optical crystal to a hydrogen-containing or deuterium-containing passivating gas.
摘要翻译：用于检查工具的非线性光学晶体的钝化包括：在氟，氟离子和含氟化合物中的至少一种存在下生长非线性光学晶体，机械地制备非线性光学晶体，进行退火处理在非线性光学晶体上并将非线性光学晶体暴露于含氢或含氘的钝化气体。

99. 发明申请

WO2013180965A3 METALLIC CRUCIBLES AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：金属硬质合金及其形成方法
公开(公告)号：WO2013180965A3
公开(公告)日：2014-05-08
申请号：PCT/US2013041347
申请日：2013-05-16
申请人： STARCK H C INC , WINNICKA MARIA BOZENA , ROZAK GARY A
发明人： WINNICKA MARIA BOZENA , ROZAK GARY A
IPC分类号： B22F3/00 , B22F3/04 , B22F3/10 , B22F5/00 , B22F7/06 , C30B11/00 , C30B35/00
CPC分类号： B22F7/06 , B22F3/001 , B22F3/04 , B22F3/1007 , B22F3/1017 , B22F3/16 , B22F3/24 , B22F5/00 , B22F5/10 , B22F7/008 , B22F2003/248 , B22F2201/013 , B22F2301/20 , B22F2302/45 , B22F2998/10 , B22F2999/00 , C30B11/002 , C30B15/10 , C30B29/20 , C30B35/002 , Y10T117/1024 , B22F2201/016 , B22F2203/11 , B22F2207/01
摘要： In various embodiments, a precursor powder is pressed into an intermediate volume and chemically reduced, via sintering, to form a metallic shaped article. In a further embodiment the invention concerns a method of fabricating a shaped article having a target set of final dimensions and consisting essentially of molybdenum, the method comprising the pressing of an ammonium-based molybdenum-precursor powder, in particular ammonium dimolybdate, and a stepwise sintering process, defining four different temperature levels. In a further aspect, embodiments of the invention feature a method of treating a shaped article. An additive is disposed on at least one surface of a shaped article including or consisting essentially of one or more metals. In yet a further aspect, embodiments of the invention feature a crucible that includes or consists essentially of an inner layer consisting essentially of an alloy of molybdenum and tungsten, an outer layer consisting essentially of molybdenum, and therebetween, a zone consisting essentially of a graded concentration of molybdenum and tungsten.
摘要翻译：在各种实施方案中，将前体粉末压制成中间体积并通过烧结化学还原以形成金属成型制品。在另一个实施方案中，本发明涉及一种制造成型制品的方法，所述成型制品具有最终尺寸的目标组并且基本上由钼组成，所述方法包括压制基于铵的钼前体粉末，特别是二钼酸铵，以及逐步烧结过程，定义四种不同的温度水平。在另一方面，本发明的实施方案的特征在于一种处理成型制品的方法。添加剂设置在成形制品的至少一个表面上，包括或基本上由一种或多种金属组成。在另一方面，本发明的实施方案的特征在于坩埚，其包括基本上由主要由钼和钨的合金组成的内层或基本上由钼组成的外层，其间，基本上由等级钼和钨的浓度。

100. 发明申请

WO2013115272A1 種結晶保持体、結晶成長装置および結晶成長方法审中-公开
标题翻译： SEED CRYSTAL HOLDER，晶体生长装置和晶体生长方法
公开(公告)号：WO2013115272A1
公开(公告)日：2013-08-08
申请号：PCT/JP2013/052091
申请日：2013-01-30
申请人：京セラ株式会社
发明人：正木　克明 , 久芳　豊 , 堂本　千秋 , 上山　大輔
IPC分类号： C30B29/36 , C30B19/06
CPC分类号： C30B9/06 , C30B15/32 , C30B29/36 , Y10T117/1024 , Y10T117/1092
摘要：　本発明の種結晶保持体は、溶液法による結晶成長に用いられる種結晶保持体であって、炭化珪素からなる種結晶と、該種結晶の上に位置する保持部材と、前記種結晶と前記保持部材とを固定した接着材と、該接着材によって厚み方向に挟持された、平面視において前記種結晶の外縁よりも小さい外縁を有する、炭素からなるシート部材とを有する。
摘要翻译：这种籽晶保持器用于使用溶液法生长晶体。晶体保持器设置有：包含碳化硅的晶种; 位于晶种上方的保持构件; 用于将晶种和保持构件固定在一起的装订材料; 以及片状部件，其包括在厚度方向上被粘合材料夹持的碳，并且在平面图中，具有比所述晶种的外边缘小的外边缘的碳。

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