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1. 发明申请

WO2010033005A2 금속 단결정 나노플레이트 및 그 제조방법 审中-公开
标题翻译：金属单晶纳米板及其制造方法
公开(公告)号：WO2010033005A2
公开(公告)日：2010-03-25
申请号：PCT/KR2009/005388
申请日：2009-09-22
申请人： 한국과학기술원 , 김봉수 , 유영동
发明人： 김봉수 , 유영동
IPC分类号： B82B3/00
CPC分类号： B22F1/0055 , B22F1/0044 , B22F9/02 , B22F9/30 , B22F2001/0037 , C30B25/00 , C30B29/02 , C30B29/60 , Y10T117/10 , Y10T117/1016 , Y10T117/102 , Y10T428/24413
摘要： 본 발명은 금속, 할로겐화금속, 또는 이들의 혼합물을 선구물질로 이용한 금속 나노플레이트(metal nano-plate)의 제조방법으로, 상세하게는 반응로의 전단부에 위치시킨 금속, 할로겐화금속, 또는 이들의 혼합물을 포함하는 선구물질과 반응로의 후단부에 위치시킨 단결정 기판을 불활성 기체가 흐르는 분위기에서 열처리하여 상기 단결정 기판상에 단결정체의 금속 나노플레이트(nano-plate)가 형성되는 특징이 있다. 본 발명의 제조방법은 촉매를 사용하지 않는 기상이송법을 이용하여 수 마이크로미터 크기의 금속 나노플레이트를 제조할 수 있으며, 그 공정이 간단하고 재현성있으며, 제조된 나노플레이트가 결함 및 불순물을 포함하지 않는 고 결정성 및 고순도 단결정 상태의 귀금속 나노플레이트인 장점을 가지며, 단결정 기판의 표면 방향을 제어하여 금속 나노플레이트의 형상 및 단결정 기판과의 배향성을 제어할 수 있는 장점을 가지며, 수 마이크로미터 크기의 금속 나노플레이트를 대량생산할 수 있는 장점이 있다.
摘要翻译：本发明涉及使用金属，金属卤化物或其混合物作为前体来制造金属纳米板的方法，金属，金属卤化物，或在位于一个前体材料的后端部的惰性气体气流的气氛中的单晶衬底上的单晶衬底进行热处理的单晶的金属纳米盘（纳米板）以及它们的反应混合物正在形成。本发明的制造方法可以为微米尺寸的金属纳米板可以通过使用不使用催化剂的气相转移法来制备，并且该过程是简单和可再现的，在制造纳米板不包括缺陷和杂质。该高结晶度，并具有高纯度的单晶态的贵金属优点纳米板，具有的优点是通过控制单晶衬底的表面取向，以控制的形状和金属纳米板的单晶基板的取向，微米数量它具有大量生产金属纳米板的优点。

2. 发明申请

WO2008055067A3 METHOD AND APPARATUS FOR FORMING A SILICON WAFER 审中-公开
标题翻译：用于形成硅波的方法和装置
公开(公告)号：WO2008055067A3
公开(公告)日：2009-06-11
申请号：PCT/US2007082666
申请日：2007-10-26
申请人： EVERGREEN SOLAR INC , VAN GLABBEEK LEO , ATCHLEY BRIAN , JANOCH ROBERT E , ANSELMO ANDREW P , REITSMA SCOTT
发明人： VAN GLABBEEK LEO , ATCHLEY BRIAN , JANOCH ROBERT E , ANSELMO ANDREW P , REITSMA SCOTT
IPC分类号： C30B15/00 , C30B33/00
CPC分类号： C30B15/005 , C30B15/34 , C30B33/00 , Y10T117/102
摘要： A furnace for growing a ribbon crystal has a channel for growing a ribbon crystal at a given rate in a given direction, and a separating mechanism for separating a portion from the growing ribbon crystal. At least a part of the separating mechanism moves at about the given rate and in about the given direction while separating the portion from the growing ribbon crystal.
摘要翻译：用于生长带状晶体的炉具有用于沿给定方向以给定速率生长带状晶体的通道和用于从生长的带状晶体分离部分的分离机构。分离机构的至少一部分以大约给定速率和大约给定方向移动，同时将该部分与生长的带状晶体分离。

3. 发明申请

WO2009010758A2 A METHOD OF FABRICATING STRUCTURED PARTICLES COMPOSED OF SILICON OR A SILICON-BASED MATERIAL AND THEIR USE IN LITHIUM RECHARGEABLE BATTERIES 审中-公开
标题翻译：制备由硅或基于硅的材料组成的结构化颗粒的方法及其在锂可充电电池中的使用方法
公开(公告)号：WO2009010758A2
公开(公告)日：2009-01-22
申请号：PCT/GB2008002452
申请日：2008-07-17
申请人： NEXEON LTD , GREEN MINO
发明人： GREEN MINO
IPC分类号： H01M4/38 , H01M4/02 , H01M4/04 , H01M4/134 , H01M4/1395 , H01M4/48 , H01M4/485 , H01M4/66 , H01M10/0525 , H01M10/36
CPC分类号： H01M4/134 , H01M4/0492 , H01M4/1395 , H01M4/386 , H01M10/52 , H01M2004/027 , Y02E60/122 , Y02P70/54 , Y10T29/49108 , Y10T117/102 , Y10T428/2982
摘要： Pillared particles of silicon or silicon-comprising material and a method of fabricating the same. These particles may be used to create both a composite anode structure with a polymer binder, a conductive additive and a metal foil current collector, and an electrode structure. The structure of the particles overcoming the problems of charge/discharge capacity loss.
摘要翻译：硅或含硅材料的柱状颗粒及其制造方法。这些颗粒可用于产生具有聚合物粘合剂，导电添加剂和金属箔集电器的复合阳极结构和电极结构。颗粒的结构克服了充放电容量损失的问题。

4. 发明申请

WO2005100644A1 METHOD FOR THE GROWTH OF SEMICONDUCTOR RIBBONS 审中-公开
标题翻译：半导体生长的方法RIBBONS
公开(公告)号：WO2005100644A1
公开(公告)日：2005-10-27
申请号：PCT/PT2004/000007
申请日：2004-04-15
申请人： FACULDADE DE CIÊNCIAS DA UNIVERSIDADE DE LISBOA , VALLÊRA, António
发明人： VALLÊRA, António , SERRA, João , MAIA ALVES, Jorge , BRITO, Miguel , GAMBOA, Roberto , HENRIQUES, João
IPC分类号： C30B15/00
CPC分类号： C30B29/06 , C30B15/34 , Y10T117/10 , Y10T117/102 , Y10T117/1044 , Y10T117/1076 , Y10T117/108
摘要： The present invention provides a method for the continuous production of semiconductor ribbons by growth from a linear molten zone. The creation of the molten zone is achieved by application of an electric current, direct or alternating, parallel to the surface of the ribbon and perpendicular to the direction of growth, and intense enough to melt the said material, preferably using electrodes of the said material. The molten zone is fed by transference of the material, in the liquid state, from one or more reservoirs, where melting of the feedstock occurs. Preferably, the said electrodes and the said reservoir(s) are only constituted by the said material, thus avoiding contamination by foreign materials. The present invention is applicable, for example, in the industry of silicon ribbons production for photovoltaic application.
摘要翻译：本发明提供一种通过从线性熔融区生长连续生产半导体带的方法。通过施加平行于带的表面并垂直于生长方向的直接或交替的电流，并且强度足以熔化所述材料，优选使用所述材料的电极来实现熔融区的产生。熔融区通过材料的转移而以液体状态从一个或多个储存器送出，其中原料发生熔化。优选地，所述电极和所述储存器仅由所述材料构成，从而避免异物污染。本发明可应用于例如用于光伏应用的硅带生产的工业。

5. 发明申请

WO1996021054A1 OPTICALLY FUSED SEMICONDUCTOR POWDER FOR SOLAR CELLS 审中-公开
标题翻译：用于太阳能电池的光学熔融半导体粉末
公开(公告)号：WO1996021054A1
公开(公告)日：1996-07-11
申请号：PCT/GB1996000007
申请日：1996-01-03
申请人： ONTARIO HYDRO , STEVENS, Gary, Don , PADOVANI, Francois, A.
发明人： ONTARIO HYDRO
IPC分类号： C30B29/06
CPC分类号： C30B29/06 , C30B13/00 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S117/90 , Y10T117/102
摘要： A method and apparatus for forming semiconductor particles (42) for solar cells using an optical furnace (30). Uniform mass piles (26) of powered semiconductor feedstock are almost instantaneously optically fused to define high purity semiconductor particles without oxidation. The high intensity optical energy is directed and focused to the semiconductor feedstock piles (26) advanced by a conveyer medium (16) thereunder. The semiconductor feedstock piles (26) are at least partially melted and fused to form a single semiconductor particle (42) which can be later separated from a refractory layer (18) by a separator (50), preferably comprised of silica. The apparatus (10) and process is automated, providing a high throughput to produce uniform mass, high quality spheres for realizing high efficiency solar cells. The apparatus is energy efficient, whereby process parameters can be easily and quickly established.
摘要翻译：一种用于使用光学炉（30）形成用于太阳能电池的半导体颗粒（42）的方法和装置。动力半导体原料的均匀质量堆（26）几乎被瞬时光学融合，以限定高纯度半导体颗粒而没有氧化。高强度光能被引导并聚焦到由其下的传送介质（16）前进的半导体原料桩（26）。半导体原料桩（26）至少部分地熔化并熔化以形成单个半导体颗粒（42），其可以稍后通过隔板（50）从耐火层（18）分离，优选由二氧化硅组成。设备（10）和工艺是自动化的，提供高产量以产生用于实现高效率太阳能电池的均匀质量，高质量的球体。该装置是高能效的，由此可以容易且快速地建立工艺参数。

6. 发明申请

WO2006108191A8 SEVENTY FIVE MILLIMETER SILICON CARBIDE WAFER WITH LOW WARP, BOW, AND TTV 审中-公开
标题翻译： SEVENTY 5 MILLIMETER碳化硅晶片，低翘曲，弓和TTV
公开(公告)号：WO2006108191A8
公开(公告)日：2007-05-31
申请号：PCT/US2006013757
申请日：2006-04-07
申请人： CREE INC , POWELL ADRIAN , BRIXIUS WILLIAM H , LEONARD ROBERT TYLER , MCCLURE DAVIS MCCLURE , LAUGHNER MICHAEL PAUL
发明人： POWELL ADRIAN , BRIXIUS WILLIAM H , LEONARD ROBERT TYLER , MCCLURE DAVIS MCCLURE , LAUGHNER MICHAEL PAUL
IPC分类号： C30B29/36 , B24B37/04
CPC分类号： H01L29/66068 , C30B23/00 , C30B29/36 , C30B33/00 , H01L21/02024 , H01L21/02378 , H01L21/0243 , H01L21/0254 , H01L29/1608 , Y10T117/10 , Y10T117/1004 , Y10T117/102 , Y10T428/21
摘要： A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches, a warp of less than about 5 µm, a bow less than about 5 µm, and a total thickness variation of less than about 2.0 µm.
摘要翻译：公开了一种高质量的SiC单晶片。晶片具有至少约3英寸的直径，小于约5μm的弯曲，小于约5μm的弯曲以及小于约2.0μm的总厚度变化。

7. 发明申请

WO2006009881A3 PROCESS AND APPARATUS FOR FORMING NANOPARTICLES USING RADIOFREQUENCY PLASMAS 审中-公开
标题翻译：使用放射性等离子体形成纳米颗粒的方法和装置
公开(公告)号：WO2006009881A3
公开(公告)日：2007-03-29
申请号：PCT/US2005021551
申请日：2005-06-17
申请人： INNOVALIGHT INC , KORTSHAGEN UWE , THIMSEN ELIJAH J , MANGOLINI LORENZO , BAPAT AMEYA , JURSBERG DAVID
发明人： KORTSHAGEN UWE , THIMSEN ELIJAH J , MANGOLINI LORENZO , BAPAT AMEYA , JURSBERG DAVID
IPC分类号： H01L21/31
CPC分类号： C30B29/605 , B82Y30/00 , C01B19/007 , C01G1/00 , C01G1/02 , C01P2004/04 , C01P2004/64 , C01P2004/84 , C30B7/005 , C30B25/105 , Y10S977/834 , Y10T117/10 , Y10T117/102 , Y10T117/104 , Y10T117/108
摘要： Methods and apparatus for producing nanoparticles, including single-crystal semiconductor nanoparticles, are provided. The methods include the step of generating a constricted radiofrequency plasma in the presence of a precursor gas containing precursor molecules to form nanoparticles. Single-crystal semiconductor nanoparticles, including photoluminescent silicon nanoparticles, having diameters of no more than 10 nm may be fabricated in accordance with the methods.
摘要翻译：提供了包括单晶半导体纳米粒子的纳米粒子的制造方法和装置。所述方法包括在含有前体分子的前体气体存在下产生收缩的射频等离子体以形成纳米颗粒的步骤。可以根据这些方法制造直径不大于10nm的单晶半导体纳米颗粒，包括光致发光硅纳米颗粒。

8. 发明申请

WO2002101120A2 PROCESS AND APPARATUS FOR OBTAINING BULK MONOCRYSTALLINE GALLIUM-CONTAINING NITRIDE 审中-公开
标题翻译：用于获得大容量单晶含氮氮化物的方法和装置
公开(公告)号：WO2002101120A2
公开(公告)日：2002-12-19
申请号：PCT/IB2002/004185
申请日：2002-05-17
申请人： AMMONO LTD. , NICHIA CORPORATION , DWILINSKI, Robert, Tomasz , DORADZINSKI, Roman, Marek , SIERZPUTOWSKI, Leszek, Piotr , GARCZYNSKI, Jerzy , KANBARA, Yasuo
发明人： DWILINSKI, Robert, Tomasz , DORADZINSKI, Roman, Marek , SIERZPUTOWSKI, Leszek, Piotr , GARCZYNSKI, Jerzy , KANBARA, Yasuo
IPC分类号： C30B
CPC分类号： C30B29/406 , C30B7/00 , C30B7/10 , C30B29/403 , H01S5/0281 , H01S5/32341 , Y10T117/10 , Y10T117/102 , Y10T117/1024
摘要： The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
摘要翻译：本发明涉及一种用于制备含镓氮化物晶体的氨基方法，其中在含超临界含氮溶剂中的含碱金属的组分存在下，含镓原料在至少一种结晶晶种上结晶。该方法可以提供具有非常高质量的单晶含镓氮化物晶体。

9. 发明申请

WO02051623A1 EXTRA HIGH VOLTAGE GENERATOR 审中-公开
标题翻译：超高压发电机
公开(公告)号：WO02051623A1
公开(公告)日：2002-07-04
申请号：PCT/JP2001/011010
申请日：2001-12-14
IPC分类号： B01J3/06 , B30B11/00 , B30B5/00
CPC分类号： B30B11/007 , B01J3/067 , B30B11/004 , B30B15/026 , Y10T117/102 , Y10T117/1096
摘要： An extra high voltage generator, comprising vertically symmetrical upper and lower guide blocks (1, 2) having pyramidal slopes formed in the upper and lower surfaces thereof, wherein upper and lower base blocks (3, 5) are formed of vertically symmetrical upper and lower pyramidal portions and disposed at the center of a vertical pyramidal recessed part formed of the vertical pyramidal slopes of the vertical guide blocks (1, 2), and an upper pyramidal block (12) is disposed between the upper pyramidal slope of the upper guide block and a press frame (14).
摘要翻译：一种高压发生器，包括在其上表面和下表面上形成有锥形斜面的垂直对称的上下导向块（1,2），其中上下基座（3,5）由上下对称形成金字塔形部分并且设置在由垂直导块（1,2）的垂直金字塔形斜面形成的垂直锥形凹部的中心，并且上金字塔形块（12）设置在上引导块的上金字塔斜坡和压框（14）。

10. 发明申请

WO1995033873A1 COMPOUND MONOCRYSTAL MANUFACTURING METHOD AND APPARATUS 审中-公开
标题翻译：复合单晶制造方法和装置
公开(公告)号：WO1995033873A1
公开(公告)日：1995-12-14
申请号：PCT/JP1995001069
申请日：1995-06-01
申请人： KABUSHIKI KAISHA KOBE SEIKO SHO , FUJIKAWA, Takao , UEHARA, Kazuhiro , SAKASHITA, Yoshihiko , SUZUKI, Kazuya , OKADA, Hiroshi , KAWANAKA, Takao , OOMOTO, Seiichiro
发明人： KABUSHIKI KAISHA KOBE SEIKO SHO
IPC分类号： C30B11/06
CPC分类号： C30B11/00 , C30B29/48 , Y10T117/102
摘要： The manufacturing method according to the present invention has the steps of thermally melting a raw material in a raw material storage container (14), which is provided on the inner side of heating means (3a), by these heating means (3a) provided in a furnace casing (1), and then cooling and solidifying a molten liquid (62) of the raw material from the lower side thereof to grow a monocrystal (61), and is characterized in that a non-gas-permeable air-tight chamber (4) surrounding the raw material storage container (14) on the inner side of the heating means (3a) is provided, a uniform pressure passage (10) allowing the interior and exterior of the air-tight chamber (4) to communicate with each other being formed in the portion of the air-tight chamber (4) which is downwardly away from the heating means (3a) to surround the raw material storage container (14) with this air-tight chamber (4), a region of the uniform pressure passage (10) being maintained in a low temperature condition of not higher than a melting point of a high dissociation pressure component of the raw material, whereby the raw material in the container (14) is heated to grow a monocrystal.
摘要翻译：根据本发明的制造方法具有如下步骤：通过这些加热装置（3a）设置在加热装置（3a）的内侧的原料储存容器（14）中的原料热熔融炉壳（1），然后从原料的下侧冷却固化原料的熔融液（62），生长单晶（61），其特征在于，不透气的气密室（4）围绕加热装置（3a）的内侧的原料储存容器（14）设置有均匀的压力通道（10），其允许气密室（4）的内部和外部与彼此形成在气密室（4）的向下远离加热装置（3a）的部分中，以与该气密室（4）包围原料储存容器（14），区域均匀的压力通道（10）保持在低温条件o f不高于原料的高解离压成分的熔点，由此容器（14）中的原料被加热以生长单晶。

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