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1. 发明申请

US20060118598A1 Bonding apparatus and bonding method 审中-公开
标题翻译：接合装置和接合方法
公开(公告)号：US20060118598A1
公开(公告)日：2006-06-08
申请号：US11291838
申请日：2005-12-02
申请人： Yusuke Chikamori , Naoaki Ogure , Hideki Tateishi , Yukio Fukunaga , Hiroyuki Ueyama
发明人： Yusuke Chikamori , Naoaki Ogure , Hideki Tateishi , Yukio Fukunaga , Hiroyuki Ueyama
IPC分类号： B23K1/00 , B23K5/00 , B23K20/14
CPC分类号： B23K20/023 , B23K2101/40
摘要： A bonding apparatus can bond contacts of electronic components directly to each other without the need for solder. The bonding apparatus include a hermetically sealed processing chamber, a plurality of bases for holding at least two workpieces having respective bonding regions in the processing chamber, a gas inlet for introducing a processing gas to clean the bonding regions into the processing chamber, a pressure controller for controlling a predetermined pressure to be developed in the processing chamber, a heater for heating the workpieces in the processing chamber, and a bonding unit for pressing and bonding the bonding regions of the workpieces to each other in the processing chamber.
摘要翻译：接合装置可以将电子部件的触点彼此直接接合而不需要焊料。接合装置包括密封处理室，用于在处理室中保持具有各自的接合区域的至少两个工件的多个基座，用于引入处理气体以将接合区域引入处理室的气体入口，压力控制器用于控制处理室中要显影的预定压力，用于加热处理室中的工件的加热器，以及用于在处理室中将工件的接合区域彼此压合并粘合的接合单元。

2. 发明申请

US20070289604A1 Substrate Processing Apparatus 审中-公开
标题翻译：基板加工装置
公开(公告)号：US20070289604A1
公开(公告)日：2007-12-20
申请号：US11587974
申请日：2005-04-27
申请人： Yukio Fukunaga , Akira Susaki , Junji Kunisawa , Hiroyuki Ueyama , Shohei Shima , Akira Fukunaga , Hideki Tateishi , Junko Mine
发明人： Yukio Fukunaga , Akira Susaki , Junji Kunisawa , Hiroyuki Ueyama , Shohei Shima , Akira Fukunaga , Hideki Tateishi , Junko Mine
IPC分类号： C23G1/02 , B08B3/00 , G05D23/00 , G05D99/00
CPC分类号： H01L21/76838 , H01L21/02063 , H01L21/02068 , H01L21/67253
摘要： To provide an apparatus and a method capable of supplying a gas containing an evaporated reducing organic compound while strictly controlling the flow rate thereof to process a surface of a metal on a substrate without causing any deterioration of various types of films forming a semiconductor element with a simple apparatus configuration. The apparatus includes a process chamber 10 for keeping a substrate W therein, the process chamber 10 being gastight, an evacuation control system 20 for controlling the pressure in the process chamber 10, and a process gas supply system 30 for supplying a process gas containing a reducing organic compound to the process chamber 10. The process gas supply system 30 has an evaporator 32 keeping liquid material of the reducing organic compound therein and having an evaporating liquid surface S, a process gas pipe 18 for directing the process gas containing the reducing organic compound evaporated in the evaporator 32 into the process chamber 10, and a throttle element 40 disposed in the process gas pipe 18 for controlling the flow rate of the process gas to be supplied to the process chamber 10 by adjusting the opening of the throttle element 40. The opening of the throttle element 40 is so set that the pressure variation in the evaporator 32 can be maintained within a prescribed range.
摘要翻译：提供一种能够提供含有蒸发还原性有机化合物的气体的装置和方法，同时严格控制其流速来处理基板上的金属表面，而不会导致形成半导体元件的各种类型的膜的劣化简单的设备配置。该装置包括用于将基板W保持在其中的处理室10，气密的处理室10，用于控制处理室10中的压力的抽空控制系统20以及用于提供含有将有机化合物还原成处理室10。工艺气体供给系统30具有：蒸发器32，其中还原有机化合物的液体材料保持在其中并具有蒸发的液体表面S;一个工艺气体管道18，用于将含有在蒸发器32中蒸发的还原性有机化合物的工艺气体引导到过程设置在处理气体管道18中的节流元件40，用于通过调节节流元件40的开口来控制供给处理室10的处理气体的流量。节流元件40的开度被设定为使得蒸发器32中的压力变化可以保持在规定范围内。

3. 发明授权

US06387182B1 Apparatus and method for processing substrate 失效
标题翻译：基板处理装置及方法
公开(公告)号：US06387182B1
公开(公告)日：2002-05-14
申请号：US09517699
申请日：2000-03-02
申请人： Kuniaki Horie , Yukio Fukunaga , Naoaki Ogure , Tsutomu Nakada , Masahito Abe , Mitsunao Shibasaki , Hidenao Suzuki , Yuji Araki , Kiwamu Tsukamoto
发明人： Kuniaki Horie , Yukio Fukunaga , Naoaki Ogure , Tsutomu Nakada , Masahito Abe , Mitsunao Shibasaki , Hidenao Suzuki , Yuji Araki , Kiwamu Tsukamoto
IPC分类号： B05C2100
CPC分类号： C23C16/45574 , C23C16/409 , C23C16/45514 , C23C16/45561 , C23C16/45563 , C23C16/4557
摘要： A substrate processing apparatus forms a thin film of high-dielectric or ferroelectric such as barium/strontium titanates, or a copper film for wiring on a substrate, and has a gas ejection head for individually introducing at least two gases including a material gas and ejecting the gases toward a substrate to be processed. The gas ejection head has at least two gas passageways for individually introducing the two gases, and at least two temperature control devices for individually controlling temperatures of the gases flowing through the gas passageways.
摘要翻译：基板处理装置在基板上形成诸如钡/锶钛酸盐或铜箔的高电介质或铁电薄膜，并且具有气体喷射头，用于分别引入包括材料气体的至少两种气体并喷射朝向待处理基板的气体。气体喷射头具有用于分别引入两种气体的至少两个气体通道和用于单独控制流过气体通道的气体的温度的至少两个温度控制装置。

4. 发明授权

US6036783A Liquid material vaporizer apparatus and gas ejection device 失效
标题翻译：液体材料蒸发器和排气装置
公开(公告)号：US6036783A
公开(公告)日：2000-03-14
申请号：US834593
申请日：1997-04-07
申请人： Yukio Fukunaga , Takeshi Murakami , Naoaki Ogure , Akihisa Hongo
发明人： Yukio Fukunaga , Takeshi Murakami , Naoaki Ogure , Akihisa Hongo
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/00
CPC分类号： C23C16/4557 , C23C16/4486 , C23C16/45565
摘要： A vaporizer apparatus enables efficient vaporization of a liquid material for the production of high dielectric thin film devices by allowing a sufficient dwell time for complete vaporization of the feed liquid. The vaporizer apparatus also prevents degradation of the feed gas after vaporization and provides a stable supply of the vaporized feed gas to the substrate. The vaporizer apparatus comprises an outer member having a cylindrical inner surface, and an inner member having a cylindrical outer surface opposing the cylindrical inner surface of the outer member. A feed material passage having a spiral configuration is formed on at least one of the cylindrical inner surface and the cylindrical outer surface. The feed material passage communicates with a feed liquid entry opening and a feed gas exit opening. A heating device is provided for heating at least one of the outer member and inner member.
摘要翻译：蒸发器装置能够通过允许足够的停留时间来充分蒸发进料液体，从而有效地蒸发用于生产高介电薄膜装置的液体材料。汽化器装置还防止蒸发后的进料气体的劣化并且提供稳定的气化进料气体供应到基材。蒸发器装置包括具有圆柱形内表面的外部构件和具有与外部构件的圆柱形内表面相对的圆柱形外表面的内部构件。在圆柱形内表面和圆柱形外表面中的至少一个上形成具有螺旋构造的进给材料通道。进料材料通道与进料液入口和进料气体出口开口连通。提供加热装置用于加热外部构件和内部构件中的至少一个。

5. 发明授权

US5862605A Vaporizer apparatus 失效
标题翻译：气化装置
公开(公告)号：US5862605A
公开(公告)日：1999-01-26
申请号：US862155
申请日：1997-05-22
申请人： Kuniaki Horie , Naoaki Ogure , Yukio Fukunaga , Akihisa Hongo
发明人： Kuniaki Horie , Naoaki Ogure , Yukio Fukunaga , Akihisa Hongo
IPC分类号： B01D1/00 , C23C16/448 , F26B19/00
CPC分类号： B01D1/00 , C23C16/4481
摘要： Heat can be supplied effectively to a porous member of a vaporizer apparatus so that a vaporizing operation can be carried out smoothly and efficiently. The vaporizer apparatus includes a vaporizer section having a porous member including a liquid receiving surface and a vapor discharge surface. A feed supply section supplies a liquid feed material to the liquid receiving surface of the porous member. A heating medium passage is in thermal contact with the porous member. A heating medium supply system flows a heating medium of a temperature higher than a vaporization temperature of the liquid feed material through the heating medium passage.
摘要翻译：可以有效地将热量提供给蒸发器装置的多孔构件，从而可以平稳有效地进行蒸发操作。蒸发器装置包括具有包括液体接收表面和蒸汽排放表面的多孔构件的蒸发器部分。供给部供给液体供给材料到多孔构件的液体接收表面。加热介质通道与多孔构件热接触。加热介质供应系统通过加热介质通道流动高于液体进料的蒸发温度的加热介质。

6. 发明授权

US08205625B2 Apparatus and method for surface treatment of substrate, and substrate processing apparatus and method 有权
标题翻译：基板表面处理装置及方法及基板处理装置及方法
公开(公告)号：US08205625B2
公开(公告)日：2012-06-26
申请号：US11987078
申请日：2007-11-27
申请人： Hideki Tateishi , Tsutomu Nakada , Akira Susaki , Shohei Shima , Yukio Fukunaga
发明人： Hideki Tateishi , Tsutomu Nakada , Akira Susaki , Shohei Shima , Yukio Fukunaga
IPC分类号： B08B5/00 , B08B13/00
CPC分类号： B24B37/04 , H01L21/02068 , H01L21/02074 , H01L21/76814 , H01L21/76883
摘要： A surface treatment apparatus of a substrate can clean a substrate surface in the air without employing a vacuum apparatus, and can remove a natural oxide film or an organic material, such as BTA, from the substrate surface without resorting to plasma cleaning. The surface treatment apparatus includes: an inert gas supply section for supplying an inert gas to the whole or part of a substrate surface to form an oxygen-blocking zone; a heating section for keeping the substrate surface at a predetermined temperature; and a cleaning gas supply section for supplying a cleaning gas to the oxygen-blocking zone to clean the substrate surface.
摘要翻译：基板的表面处理装置可以在不使用真空装置的情况下清洁空气中的基板表面，并且可以从基板表面去除自然氧化膜或有机材料（例如BTA）而不用等离子体清洗。表面处理装置包括：惰性气体供给部，用于向基板表面的全部或一部分供给惰性气体，形成阻氧区; 用于将基板表面保持在预定温度的加热部分; 以及清洁气体供给部，用于向氧阻挡区域供给清洁气体以清洁基板表面。

7. 发明申请

US20080124932A1 Apparatus and method for surface treatment of substrate, and substrate processing apparatus and method 有权
标题翻译：基板表面处理装置及方法及基板处理装置及方法
公开(公告)号：US20080124932A1
公开(公告)日：2008-05-29
申请号：US11987078
申请日：2007-11-27
申请人： Hideki Tateishi , Tsutomu Nakada , Akira Susaki , Shohei Shima , Yukio Fukunaga
发明人： Hideki Tateishi , Tsutomu Nakada , Akira Susaki , Shohei Shima , Yukio Fukunaga
IPC分类号： H01L21/302 , B08B13/00 , B08B5/00 , C23F1/08
CPC分类号： B24B37/04 , H01L21/02068 , H01L21/02074 , H01L21/76814 , H01L21/76883
摘要： An surface treatment apparatus of a substrate can clean a substrate surface in the air without employing a vacuum apparatus, and can remove a natural oxide film or an organic material, such as BTA, from the substrate surface without resorting to plasma cleaning. The surface treatment apparatus includes: an inert gas supply section for supplying an inert gas to the whole or part of a substrate surface to form an oxygen-blocking zone; a heating section for keeping the substrate surface at a predetermined temperature; and a cleaning gas supply section for supplying a cleaning gas to the oxygen-blocking zone to clean the substrate surface.
摘要翻译：基板的表面处理装置可以在不使用真空装置的情况下清洁空气中的基板表面，并且可以从基板表面去除自然氧化膜或有机材料（例如BTA），而不需要进行等离子体清洗。表面处理装置包括：惰性气体供给部，用于向基板表面的全部或一部分供给惰性气体，形成阻氧区; 用于将基板表面保持在预定温度的加热部分; 以及清洁气体供给部，用于向氧阻挡区域供给清洁气体以清洁基板表面。

8. 发明授权

US5950646A Vapor feed supply system 失效
标题翻译：蒸气供料系统
公开(公告)号：US5950646A
公开(公告)日：1999-09-14
申请号：US3947
申请日：1998-01-08
申请人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Takeshi Murakami , Yukio Fukunaga , Masahito Abe , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Mitsunao Shibasaki , Yuji Araki , Hiroyuki Ueyama
发明人： Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Takeshi Murakami , Yukio Fukunaga , Masahito Abe , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Mitsunao Shibasaki , Yuji Araki , Hiroyuki Ueyama
IPC分类号： B08B9/00 , C23C16/44 , C23C16/448 , B08B3/10
CPC分类号： C23C16/448 , B08B9/00 , C23C16/4407 , Y10S134/902
摘要： A vapor feed supply system including a vaporizer device and a method of cleaning a vapor flow region employing such a vaporizer device enables thorough cleaning of the system, without having to degrade the overall system vacuum in the process of cleaning the vaporizer device. The method includes defining a cleaning fluid passage having a predetermined withstand pressure by isolating a cleaning region of the vapor flow region, and flowing a cleaning fluid into the cleaning fluid passage under a pressure so as to enable the cleaning fluid to remain in a liquid state at a cleaning temperature of the cleaning region.
摘要翻译：包括蒸发器装置和使用这种蒸发器装置的蒸汽流动区域的清洁方法的蒸汽供给系统能够彻底清洁系统，而不必在清洁蒸发器装置的过程中降低整个系统的真空度。该方法包括通过隔离蒸汽流动区域的清洁区域来限定具有预定耐受压力的清洁流体通道，并且在压力下将清洁流体流入清洁流体通道以使清洁流体保持在液体状态在清洁区域的清洁温度下。

9. 发明申请

US20100097607A1 Film Thickness Measuring Method and Substrate Processing Apparatus 审中-公开
标题翻译：薄膜厚度测量方法和基板处理设备
公开(公告)号：US20100097607A1
公开(公告)日：2010-04-22
申请号：US11989763
申请日：2006-08-01
申请人： Akira Susaki , Shohei Shima , Yukio Fukunaga , Hideki Tateishi , Junko Mine
发明人： Akira Susaki , Shohei Shima , Yukio Fukunaga , Hideki Tateishi , Junko Mine
IPC分类号： G01B11/06 , C23C14/52 , B05C11/00 , B01J19/00 , G01J4/00 , C23G1/02
CPC分类号： G01B11/0641
摘要： A film thickness measuring method can carry out measurement of a thickness of an oxide film more simply in a shorter time. The film thickness measuring method includes determining a thickness of an oxide film or thin film of a metal or alloy by solely using a phase difference Δ, measured by ellipsometry, based on a predetermined relationship between the phase difference Δ and the thickness of the oxide film or thin film of the metal or alloy.
摘要翻译：膜厚测量方法可以在更短的时间内更简单地进行氧化膜厚度的测量。薄膜厚度测量方法包括基于相位差＆Dgr之间的预定关系，通过使用通过椭偏仪测量的相位差＆Dgr i来确定金属或合金的氧化物膜或薄膜的厚度; 以及金属或合金的氧化膜或薄膜的厚度。

10. 发明授权

US06176929B1 Thin-film deposition apparatus 失效
标题翻译：薄膜沉积装置
公开(公告)号：US06176929B1
公开(公告)日：2001-01-23
申请号：US09118177
申请日：1998-07-17
申请人： Yukio Fukunaga , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Mitsunao Shibasaki , Kuniaki Horie , Hiroyuki Ueyama , Takeshi Murakami
发明人： Yukio Fukunaga , Hiroyuki Shinozaki , Kiwamu Tsukamoto , Mitsunao Shibasaki , Kuniaki Horie , Hiroyuki Ueyama , Takeshi Murakami
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/4557 , C23C16/45591 , C23C16/46
摘要： A compact thin-film deposition apparatus can promote a stable growth of a high quality thin-film product of uniform quality. The apparatus comprises a vacuum-tight deposition chamber enclosing a substrate holding device for holding a substrate. An elevator device for moving the substrate holding device and a gas showering head for flowing a film forming gas towards the substrate are provided. A transport opening and an exhaust opening are provided on a wall section of the deposition chamber at a height corresponding to the transport position and the deposition position, respectively. The deposition chamber is provided with a flow guiding member, and the flow guiding member comprises a cylindrical member to surround an elevating path of the substrate holding device and a first ring member to vertically divide a chamber space at a height between the exhaust opening and the transport opening.
摘要翻译：紧凑的薄膜沉积装置可以促进质量均匀的高质量薄膜产品的稳定生长。该装置包括一个真空密封的沉积室，其包围用于保持基板的基板保持装置。提供了一种用于移动基板保持装置的电梯装置和用于使成膜气体朝向基板流动的气体淋浴头。输送开口和排气口分别设置在沉积室的壁部分上，其高度分别对应于输送位置和沉积位置。沉积室设置有导流构件，并且流动引导构件包括圆筒构件以包围基板保持装置的升降路径和第一环构件，以在排气口和排气口之间的高度垂直分隔腔室空间运输开放。

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