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    • 10. 发明授权
    • Trap apparatus
    • 陷阱装置
    • US06488774B1
    • 2002-12-03
    • US09512333
    • 2000-02-24
    • Kuniaki HorieMasahito AbeTsutomu NakadaYuji Araki
    • Kuniaki HorieMasahito AbeTsutomu NakadaYuji Araki
    • C23C1600
    • C23C16/4412B01D5/0027B01D8/00Y02C20/30
    • A trap apparatus is optimum for trapping a material gas discharged from a vapor deposition apparatus for depositing in a vapor phase thin films of high-dielectric or ferroelectric such as barium/strontium titanates on substrates. The trap apparatus is disposed downstream of a vacuum process chamber. The vacuum process chamber is for processing a substrate. The trap apparatus is for trapping a component having a low vapor pressure contained in a gas discharged from the vacuum process chamber. The trap apparatus includes a trap container for introducing the gas discharged from the vacuum process chamber, and a cooling device provided in the trap container for cooling the gas to a temperature equal to or lower than a condensing temperature of a gas component which is contained in the gas and easily liquidized.
    • 捕集装置最适于捕获从气相沉积装置排出的材料气体,用于沉积在基底上的高电介质或铁电体如钡/锶钛酸盐的气相薄膜中。 捕集装置设置在真空处理室的下游。 真空处理室用于处理基板。 捕集装置用于捕获从真空处理室排出的气体中所含的具有低蒸气压的部件。 捕集装置包括用于引入从真空处理室排出的气体的捕集容器和设置在捕集容器中的冷却装置,用于将气体冷却至等于或低于气体成分的冷凝温度的温度 气体容易液化。