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1. 发明申请

US20060032585A1 Plasma processing method and apparatus 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：US20060032585A1
公开(公告)日：2006-02-16
申请号：US11198182
申请日：2005-08-08
申请人： Yoshitaka Kai , Ken Yoshioka , Tadamitsu Kanekiyo , Takeshi Shimada
发明人： Yoshitaka Kai , Ken Yoshioka , Tadamitsu Kanekiyo , Takeshi Shimada
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/31122 , H01L21/31116
摘要： A high-dielectric-constant gate insulating film 32 such as HfO2 is etched with gas plasma using gas selected from Ar gas, He gas, Ar+He mixed gas, and mixed gases formed by mixing CH4 with the preceding gases while maintaining a temperature of 40° C. or higher, thus ensuring high etching selective ratio between a HfO2 film 32 and a Poly-Si layer 33, a substrate Si layer 31 and a SiO2 mask 34, reducing the amount of loss of the substrate Si layer 31 and side etching of side walls of the Poly-Si gate portion 33 during plasma etching of HfO2.
摘要翻译：使用选自Ar气体，He气体，Ar + He混合气体的气体和通过混合CH形成的混合气体，用气体等离子体蚀刻诸如HfO 2的高介电常数栅极绝缘膜32，在保持40℃或更高温度的同时保持高的蚀刻选择比，从而确保HfO 2膜32和多晶硅层33之间的高蚀刻选择比，衬底Si层31和SiO 2掩模34，在HfO 3的等离子体蚀刻期间减少衬底Si层31的损耗量和多晶硅栅极部分33的侧壁的侧蚀刻， SUB> 2 。

2. 发明申请

US20050014380A1 Plasma processing method and apparatus 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：US20050014380A1
公开(公告)日：2005-01-20
申请号：US10650841
申请日：2003-08-29
申请人： Yoshitaka Kai , Ken Yoshioka , Tadamitsu Kanekiyo , Takeshi Shimada
发明人： Yoshitaka Kai , Ken Yoshioka , Tadamitsu Kanekiyo , Takeshi Shimada
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/461 , H01L21/8238 , H01L27/092 , H01L29/78
CPC分类号： H01L21/31122 , H01L21/31116
摘要： A high-dielectric-constant gate insulating film 32 such as HfO2 is etched with gas plasma using gas selected from Ar gas, He gas, Ar+He mixed gas, and mixed gases formed by mixing CH4 with the preceding gases while maintaining a temperature of 40° C. or higher, thus ensuring high etching selective ratio between a HfO2 film 32 and a Poly-Si layer 33, a substrate Si layer 31 and a SiO2 mask 34, reducing the amount of loss of the substrate Si layer 31 and side etching of sidewalls of the Poly-Si gate portion 33 during plasma etching of HfO2.
摘要翻译：使用选自Ar气体，He气体，Ar + He混合气体的气体和通过将CH 4与前述气体混合形成的混合气体，使用气体等离子体来蚀刻诸如HfO 2的高介电常数栅极绝缘膜32，同时保持温度 40℃以上，因此确保HfO 2膜32与Poly-Si层33，基板Si层31和SiO 2掩模34之间的高蚀刻选择比，减少基板Si层31和侧面的损耗量在HfO 2的等离子体蚀刻期间蚀刻多晶硅栅极部分33的侧壁。

3. 发明授权

US06914207B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US06914207B2
公开(公告)日：2005-07-05
申请号：US10688991
申请日：2003-10-21
申请人： Tadayoshi Kawaguchi , Tadamitsu Kanekiyo , Akihiko Mitsuda , Takeshi Shimada , Saburou Kanai
发明人： Tadayoshi Kawaguchi , Tadamitsu Kanekiyo , Akihiko Mitsuda , Takeshi Shimada , Saburou Kanai
IPC分类号： H01J37/32 , B23K9/00
CPC分类号： H01J37/32862 , H01J37/321
摘要： In a plasma processing method which comprises supplying a processing gas to a vacuum vessel forming a plasma production part, producing a plasma using an antenna and a Faraday shield which are provided at outer periphery of the vacuum vessel and to which a high-frequency electric power can be applied, and carrying out the processing, a voltage of at least 500 V is applied to the Faraday shield and a sample which is disposed in the vacuum vessel and which is a nonvolatile material as a material to be etched is etched.
摘要翻译：在等离子体处理方法中，其包括向形成等离子体生产部件的真空容器供给处理气体，使用设置在真空容器的外周的天线和法拉第屏蔽来制造等离子体，并且将高频电力并且进行处理时，向法拉第屏蔽件施加至少500V的电压，并且蚀刻设置在真空容器中并且作为待蚀刻材料的非挥发性材料的样品。

4. 发明申请

US20060175016A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20060175016A1
公开(公告)日：2006-08-10
申请号：US11066223
申请日：2005-02-28
申请人： Manabu Edamura , Ken Yoshioka , Takeshi Shimada
发明人： Manabu Edamura , Ken Yoshioka , Takeshi Shimada
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/67069 , H01J37/32091 , H01J37/321
摘要： A plasma processing apparatus capable of generating a stable and uniform-density plasma includes a processing chamber whose one surface is formed by a flat-plate-like insulating-material manufactured window, a sample mounting stage in which a sample mounting plane is formed on a surface opposed to the insulating-material manufactured window of the processing chamber, a gas-inlet for introducing a processing gas into the processing chamber, a flat-plate-structured capacitively coupled antenna formed on an outer surface of the insulating-material manufactured window with slits provided in a radial pattern, and an inductively coupled antenna formed outside the insulating-material manufactured window and performing an inductive coupling with a plasma via the window, the plasma being formed within the processing chamber. The inductively coupled antenna is configured by a coil which is wound a plurality of times with a direction defined longitudinally, the direction being perpendicular to the sample mounting plane.
摘要翻译：能够产生稳定且均匀密度的等离子体的等离子体处理装置包括：处理室，其一个表面由平板状的绝缘材料制造的窗口形成;样品安装台，其中样品安装平面形成在与处理室的绝缘材料制造窗口相对的表面，用于将处理气体引入处理室的气体入口，形成在绝缘材料制造窗口的外表面上的平板结构的电容耦合天线，具有设置在径向图案中的狭缝，以及形成在绝缘材料制造窗口外部的电感耦合天线，并且经由窗口执行与等离子体的电感耦合，等离子体形成在处理室内。电感耦合天线由线圈构成，该线圈沿着纵向限定的方向缠绕多次，该方向垂直于样品安装平面。

5. 发明授权

US07112805B2 Vacuum processing apparatus and vacuum processing method 失效
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US07112805B2
公开(公告)日：2006-09-26
申请号：US10875231
申请日：2004-06-25
申请人： Yoshitaka Kai , Kenichi Kuwabara , Takeo Uchino , Yasuhiro Nishimori , Takeshi Oono , Takeshi Shimada
发明人： Yoshitaka Kai , Kenichi Kuwabara , Takeo Uchino , Yasuhiro Nishimori , Takeshi Oono , Takeshi Shimada
IPC分类号： G01F23/00 , G01K5/08
CPC分类号： H01L21/67207 , H01L21/67167
摘要： The invention provides a semiconductor fabrication apparatus capable of preventing increase of carriage time of samples, deterioration of sample output, increase of footprint and increase of investment costs. The vacuum processing apparatus comprises a plurality of vacuum processing chambers for subjecting a sample to vacuum processing; a vacuum carriage for carrying the sample into and out of the vacuum processing chamber; a switchable chamber capable of being switched between atmosphere and vacuum for carrying the sample into and out of the vacuum processing chamber; a cassette support for supporting a plurality of cassettes and a controller for controlling carrying of the sample from a cassette through the switchable chambers, the vacuum carriage means into and out of the vacuum processing chamber. The vacuum processing chamber is equipped with an etching chamber and a critical dimension measurement chamber for critical dimension inspection of the sample.
摘要翻译：本发明提供一种半导体制造装置，其能够防止样品的携带时间增加，样品输出的劣化，占地面积的增加和投资成本的增加。真空处理装置包括用于对样品进行真空处理的多个真空处理室; 用于将样品进入和离开真空处理室的真空托架; 能够在大气和真空之间切换以将样品进出真空处理室的可切换室; 用于支撑多个盒的盒支撑件和控制器，用于控制样品从盒通过可切换室的携带，真空托架装置进入和离开真空处理室。真空处理室配有蚀刻室和临界尺寸测量室，用于对样品进行临界尺寸检验。

6. 发明申请

US20070023683A1 Vacuum processing apparatus and vacuum processing method 审中-公开
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US20070023683A1
公开(公告)日：2007-02-01
申请号：US11518894
申请日：2006-09-12
申请人： Yoshitaka Kai , Kenichi Kuwabara , Takeo Uchino , Yasuhiro Nishimori , Takeshi Oono , Takeshi Shimada
发明人： Yoshitaka Kai , Kenichi Kuwabara , Takeo Uchino , Yasuhiro Nishimori , Takeshi Oono , Takeshi Shimada
IPC分类号： G01F23/00
CPC分类号： H01L21/67207 , H01L21/67167
摘要： A vacuum processing apparatus and method includes a sample taken out from a given cassette placed on a cassette support in atmosphere, the sample is carried into a vacuum processing chamber via a chamber enabling switching between atmosphere and vacuum, the sample is subjected to etching processing in the vacuum processing chamber, and at least one inspection process is carried out in the vacuum either before or after etching of the sample in the vacuum processing chamber. The at least one inspection process in the vacuum is a defect inspection.
摘要翻译：真空处理装置和方法包括从大气中放置在盒支架上的给定盒取出的样品，通过能够在大气和真空之间切换的室将样品运送到真空处理室中，对样品进行蚀刻处理在真空处理室中对样品进行蚀刻之前或之后，在真空中进行至少一次检查处理。真空中的至少一个检查过程是缺陷检查。

7. 发明申请

US20050218337A1 Vacuum processing apparatus and vacuum processing method 失效
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US20050218337A1
公开(公告)日：2005-10-06
申请号：US10875231
申请日：2004-06-25
申请人： Yoshitaka Kai , Kenichi Kuwabara , Takeo Uchino , Yasuhiro Nishimori , Takeshi Oono , Takeshi Shimada
发明人： Yoshitaka Kai , Kenichi Kuwabara , Takeo Uchino , Yasuhiro Nishimori , Takeshi Oono , Takeshi Shimada
IPC分类号： H01L21/66 , H01J37/20 , H01L21/00 , H01L21/02 , H01L21/677 , H01L21/68
CPC分类号： H01L21/67207 , H01L21/67167
摘要： The invention provides a semiconductor fabrication apparatus capable of preventing increase of carriage time of samples, deterioration of sample output, increase of footprint and increase of investment costs. The vacuum processing apparatus comprises a plurality of vacuum processing chambers 3, 4 for subjecting a sample 8 to vacuum processing; a vacuum carriage means 2 for carrying the sample into and out of the vacuum processing chamber; a switchable chamber 5 capable of being switched between atmosphere and vacuum for carrying the sample into and out of the vacuum processing chamber; a cassette supporting means 9 for supporting a plurality of cassettes 7 capable of housing samples; a carriage means 6 capable of moving vertically for taking out a sample from a given cassette on the cassette supporting means; and a control means performing carriage control for carrying the sample taken out of the given cassette via the carriage means, the switchable chamber and the vacuum carriage means into the vacuum processing chamber, and for carrying the processed sample out of the vacuum processing chamber; wherein the vacuum processing chamber is equipped with an etching chamber 3 and a defect inspection chamber or CD measurement chamber 4 for inspecting the sample for defects.
摘要翻译：本发明提供一种半导体制造装置，其能够防止样品的携带时间增加，样品输出的劣化，占地面积的增加和投资成本的增加。真空处理装置包括用于对样品8进行真空处理的多个真空处理室3,4; 用于将样品进出真空处理室的真空托架装置2; 能够在大气和真空之间切换的可切换室5，用于将样品进出真空处理室; 用于支撑能够容纳样品的多个盒带7的盒支撑装置9; 能够垂直移动以从盒支撑装置上的给定盒带取出样品的托架装置6; 以及控制装置，执行托架控制，用于将从所述给定盒中取出的样品经由所述滑架装置，所述可切换室和所述真空托架装置运送到所述真空处理室中，并将所述经处理的样品运送出所述真空处理室; 其中真空处理室配备有用于检查样品缺陷的蚀刻室3和缺陷检查室或CD测量室4。

8. 发明申请

US20100288195A1 PLASMA PROCESSING METHOD AND APPARATUS 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：US20100288195A1
公开(公告)日：2010-11-18
申请号：US12846403
申请日：2010-07-29
申请人： Eiji IKEGAMI , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
发明人： Eiji IKEGAMI , Shoji Ikuhara , Takeshi Shimada , Kenichi Kuwabara , Takao Arase , Tsuyoshi Matsumoto
IPC分类号： C23C16/00
CPC分类号： H01J37/32963 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32192 , H01J37/32917 , H01J37/32926 , H01J37/32935 , H01J37/32981 , H01J37/3299 , H01J2237/1825 , H01J2237/327 , H01L21/67069 , H01L21/67242 , H05H1/46
摘要： Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.
摘要翻译：在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。

9. 发明授权

US07825054B2 Semiconductor porcelain composition 有权
标题翻译：半导体瓷组成
公开(公告)号：US07825054B2
公开(公告)日：2010-11-02
申请号：US12063494
申请日：2005-08-11
申请人： Takeshi Shimada , Kei Matsumoto , Koichi Terao , Kazuya Toji , Kazuhiro Nishikawa
发明人： Takeshi Shimada , Kei Matsumoto , Koichi Terao , Kazuya Toji , Kazuhiro Nishikawa
IPC分类号： C04B35/468
CPC分类号： C04B35/4682 , C04B35/6262 , C04B35/62685 , C04B2235/3201 , C04B2235/3203 , C04B2235/3208 , C04B2235/3215 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3234 , C04B2235/3251 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/3418 , C04B2235/5436 , C04B2235/5445 , C04B2235/652 , C04B2235/6585 , H01G4/1227
摘要： The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.
摘要翻译：本发明意图在BaTiO3半导体陶瓷组合物中提供一种半导体瓷组合物，其不使用Pb可以将居里温度转移到正方向并且可以显着降低室温下的电阻率。根据本发明，当Ba被Al元素（至少一种Na，K和Li）和A2元素（Bi）部分取代时，Ba进一步被特定量的Q元素取代时，或者当Ba 部分被A1元素（Na，K和Li中的至少一种）和A2元素（Bi）部分取代，Ti被特定量的M元素部分取代，可以应用最佳价态控制，室温下的电阻率可以显着降低。因此，对于PTC热敏电阻，PTC加热器，PTC开关，温度检测器等中的应用，特别优选在汽车加热器中是最佳的。

10. 发明申请

US20100183862A1 RESIN COMPOSITION, AND PREPREG 失效
标题翻译：树脂组合物和PREPREG
公开(公告)号：US20100183862A1
公开(公告)日：2010-07-22
申请号：US12594278
申请日：2008-04-11
申请人： Yasuyuki Yokoe , Toru Kaneko , Hiroshi Numata , Takeshi Shimada
发明人： Yasuyuki Yokoe , Toru Kaneko , Hiroshi Numata , Takeshi Shimada
IPC分类号： B32B27/04 , C08K9/10 , B32B37/00
CPC分类号： C08J5/24 , C08G59/504 , C08J3/241 , C08J2363/00 , C08K5/41 , C08L63/00 , C08L2205/14 , Y10T156/10 , Y10T428/24994 , Y10T428/249948 , Y10T428/24995 , Y10T428/249952 , Y10T428/25 , Y10T428/254 , Y10T428/2938 , Y10T428/31511 , Y10T428/31515 , C08L2666/02
摘要： The present invention discloses: a resin composition comprising, as essential components, 100 parts by mass of a component (A) which is an epoxy resin, 41 to 80 parts by mass of a component (B) which is thermoplastic resin particles, and 20 to 50 parts by mass (in terms of diaminodiphenylsulfone) of a component (C) which is diaminodiphenylsulfone microencapsulated with a coating agent, in which resin composition the thermoplastic resin particles (B) comprise at least thermoplastic resin particles (B1) having an average particle diameter of 1 to 50 μm and thermoplastic resin particles (B2) having an average particle diameter of 2 to 100 μm at a mass ratio of 3:1 to 1:3 and the average particle diameter ratio D2/D1 of the average particle diameter D2 of the thermoplastic resin particles (B2) to the average particle diameter D1 of the thermoplastic resin particles (B1) is 2 or more, and a prepreg produced using the resin composition.
摘要翻译：本发明公开了一种树脂组合物，作为必要成分，将100质量份作为环氧树脂的成分（A），41〜80质量份作为热塑性树脂粒子的成分（B）和20质量份至50质量份（以二氨基二苯砜计）（以二氨基二苯基砜为单位），该组分（C）是用涂料微胶囊化的二氨基二苯砜，其中树脂组合物热塑性树脂颗粒（B）至少包含具有平均颗粒的热塑性树脂颗粒直径为1〜50μm，平均粒径为2〜100μm的热塑性树脂粒子（B2）的质量比为3:1〜1:3，平均粒径D2 / D1为平均粒径D2 的热塑性树脂粒子（B2）与热塑性树脂粒子（B1）的平均粒径D1的比为2以上，使用该树脂组合物制造的预浸料坯。

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